RQ1E075XNTCR - ROHM Co., Ltd.

Data Sheet

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4V Drive Nch MOSFET

RQ1E075XN

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT8).

Application

Switching

Packaging specifications Inner circuit

Package Taping

Code TCR

Basic ordering unit (pieces) 3000

RQ1E075XN ○

Absolute maximum ratings (Ta = 25C)

Symbol Limits Unit

Drain-source voltage VDSS 30 V

Gate-source voltage VGSS 20 V

Continuous ID7.5 A

Pulsed IDP 30 A

Continuous IS1.25 A

Pulsed ISP 30 A

Power dissipation PD1.5 W

Channel temperature Tch 150 C

Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Thermal resistance

Symbol Limits Unit

Channel to Ambient Rth (ch-a) 83.3 C / W

*Mounted on a ceramic board.

Parameter

Type

Source current

(Body Diode)

Drain current

Parameter

TSMT8

(8) (7) (5)(6)

(1) (2) (4)(3)

*

(1) Source

(2) Source

(3) Source

(4) Gate

(5) Drain

(6) Drain

(7) Drain

(8) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Abbreviated symbol : XR

*2

*1

∗2

∗1

(8) (7) (6) (5)

(1) (2) (3) (4)

1/6 2011.04 - Rev.A

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Data Sheet

RQ1E075XN 　

Electrical characteristics (Ta = 25C)

Symbol Min. Typ. Max. Unit

Gate-source leakage IGSS --10 AV

GS=20V, VDS=0V

Drain-source breakdown voltage V(BR)DSS 30 - - V ID=1mA, VGS=0V

Zero gate voltage drain current IDSS --1AV

DS=30V, VGS=0V

Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA

-1217 I

D=7.5A, VGS=10V

-1724 I

D=7.5A, VGS=4.5V

-1927 I

D=7.5A, VGS=4.0V

Forward transfer admittance l Yfs l 4.5 - - S ID=7.5A, VDS=10V

Input capacitance Ciss - 440 - pF VDS=10V

Output capacitance Coss - 170 - pF VGS=0V

Reverse transfer capacitance Crss - 85 - pF f=1MHz

Turn-on delay time td(on) -7-nsI

D=3.75A, VDD 15V

Rise time tr- 25 - ns VGS=10V

Turn-off delay time td(off) - 35 - ns RL=4.0

Fall time tf-7-nsR

G=10

Total gate charge Qg- 6.8 - nC ID=7.5A, VDD 15

Gate-source charge Qgs - 1.6 - nC VGS=5V

Gate-drain charge Qgd - 2.6 - nC

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

Forward Voltage VSD - - 1.2 V Is=7.5A, VGS=0V

*Pulsed

Conditions

m

Parameter

Static drain-source on-state

resistance RDS (on)

*

2/6 2011.04 - Rev.A

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Data Sheet

RQ1E075XN

Electrical characteristic curves (Ta=25C)

0

1

2

3

4

5

6

7

0 0.2 0.4 0.6 0.8 1

VGS= 2.5V

VGS= 3.0V

VGS= 2.8V

V

GS= 10V

V

GS= 4.5V

VGS

= 4.0V

VGS= 2.0V

Ta=25°C

Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : ID[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

1

2

3

4

5

6

7

0 2 4 6 8 10

V

GS= 10V

V

GS

= 4.5V

VGS= 4.0V

VGS= 2.8V

VGS= 2.5V

VGS= 2.0V

Ta=25°C

Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : ID[A]

0.001

0.01

0.1

1

10

100

0 1 2 3

V

DS

= 10V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : ID[A]

GATE-SOURCE VOLTAGE : VGS[V]

1

10

100

0.01 0.1 1 10 100

V

GS= 4.0V

V

GS= 4.5V

VGS

= 10V

.

Ta=25°C

Pulsed

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : RDS(on)[mΩ]

1

10

100

0.01 0.1 1 10 100

VGS= 10V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : RDS(on)[mΩ]

1

10

100

0.01 0.1 1 10 100

VGS= 4.5V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : RDS(on)[mΩ]

3/6 2011.04 - Rev.A

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Data Sheet

RQ1E075XN

1

10

100

0.01 0.1 1 10 100

VGS= 4.0V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅳ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : RDS(on)[mΩ]

0.1

1

10

100

0.01 0.1 1 10

VDS= 10V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Fig.8 Forward Transfer Admittance

vs. Drain Current

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

0.01

0.1

1

10

100

0 0.5 1 1.5

VGS=0V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

SOURCE CURRENT : Is [A]

SOURCE-DRAIN VOLTAGE : VSD [V]

0

10

20

30

40

50

0 2 4 6 8 10

ID= 7.5A

ID= 3.75A

Ta=25°C

Pulsed

Fig.10 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : RDS(ON)[mΩ]

GATE-SOURCE VOLTAGE : VGS[V]

1

10

100

1000

0.01 0.1 1 10 100

tf

td(on)

td(off)

Ta=25

°

C

VDD=15V

VGS=10V

RG=10Ω

Pulsed

tr

Fig.11 Switching Characteristics

SWITCHING TIME : t [ns]

DRAIN-CURRENT : ID[A]

0

2

4

6

8

10

0246810 12 14 16

Ta=25

°

C

VDD= 15V

ID= 7.5A

RG=10Ω

Pulsed

Fig.12 Dynamic Input Characteristics

GATE-SOURCE VOLTAGE : VGS [V]

TOTAL GATE CHARGE : Qg [nC]

4/6 2011.04 - Rev.A

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Data Sheet

RQ1E075XN

10

100

1000

10000

0.01 0.1 1 10 100

Ciss

Crss

Ta=25°C

f=1MHz

VGS=0V

Coss

Fig.13 Typical Capacitance

vs. Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS[V]

CAPACITANCE : C [pF]

0.01

0.1

1

10

100

1000

0.1 1 10 100

PW = 10ms

DC operation

Operation in this area is limited by RDS(ON)

(V

GS

=10V)

PW=100us

PW=1ms

Ta=25°C

Single Pulse

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

Fig.14 Maximum Safe Operating Aera

DRAIN CURRENT : ID (A)

DRAIN-SOURCE VOLTAGE : VDS[V]

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

Rth(ch-a)=83.3°C/W

Rth(ch-a)(t)=r(t)×Rth(ch-a)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

PULSE WIDTH : Pw(s)

NORMARIZED TRANSIENT THERMAL

RESISTANCE : r (t)

5/6 2011.04 - Rev.A

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Data Sheet

RQ1E075XN 　

Measurement circuits

Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design

ESD protection circuit.

VGS

RG

VD

S

D.U.T.

ID

RL

VDD

90%

90% 90

%

10% 10%

50%

10%

50%

V

GS

Pulse width

V

DS

t

on

t

off

t

r

t

d(on)

t

f

t

d(off)

V

G

V

GS

Charge

Q

g

Q

gs

Q

gd

V

GS

I

G(Const.)

V

D

S

D.U.T.

I

D

R

L

V

DD

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

6/6 2011.04 - Rev.A

R1120A

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Notice

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Notes