2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition Feb. 1999 Application High speed power switching Features * * * * Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 2 3 3 D G S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 50 A 200 A 50 A 45 A 174 mJ 75 W Drain peak current I D(pulse) Body to drain diode reverse drain current I DR Avalanche current Avalanche energy I AP Note 1 Note 3 EAR Note 3 Note 2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2 2SK2553 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 -- -- V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16 V, VDS = 0 Zero gate voltage drain current I DSS -- -- 10 A VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) -- 7 10 m I D = 25 A VGS = 10 V Note 1 -- 10 16 m I D = 25 A VGS = 4 V Note 1 Forward transfer admittance |yfs| 35 55 -- S I D = 25 A VDS = 10 V Note 1 Input capacitance Ciss -- 3550 -- pF VDS = 10 V Output capacitance Coss -- 1760 -- pF VGS = 0 Reverse transfer capacitance Crss -- 500 -- pF f = 1 MHz Turn-on delay time t d(on) -- 35 -- ns I D = 25 A Rise time tr -- 230 -- ns VGS = 10 V Turn-off delay time t d(off) -- 470 -- ns RL = 1.2 Fall time tf -- 360 -- ns Body to drain diode forward voltage VDF -- 0.85 -- V I F = 50 A, VGS = 0 Body to drain diode reverse recovery time t rr -- 135 -- ns I F = 50 A, VGS = 0 diF / dt = 50 A / s Note 1. Pulse Test See characteristic curves of 2SK2529. 3 2SK2553 Power vs. Temperature Derating I D (A) 500 100 20 1 10 Operation in this area is limited by R DS(on) s s m s m s (1 sh n ot ) c (T = ) C 25 5 = tio ra 10 0 pe 25 PW 50 10 O 50 10 200 Drain Current 75 Maximum Safe Operation Area C D Channel Dissipation Pch (W) 100 2 0 50 100 Case Temperature 150 1 Ta = 25 C 0.5 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) 200 Tc (C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.1 0.03 0.01 10 0.2 ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 100 PW T PW T 1m 10 m Pulse Width 4 D= 100 m PW (S) 1 10 2SK2553 Avalanche Test Circuit Avalanche Waveform EAR = L V DS Monitor 1 2 * L * I AP * 2 VDSS VDSS - V DD I AP Monitor V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 VDD Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) tr 10% 90% td(off) tf 5 2SK2553 Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 6 LDPAK (L) -- -- 1.4 g 2SK2553 As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(1) -- -- 1.3 g 7 2SK2553 As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 8 LDPAK (S)-(2) -- -- 1.35 g 2SK2553 Cautions 1. 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