2SK2553(L) - Renesas Electronics

2SK2553(L), 2SK2553(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-357H (Z)

9th. Edition

Feb. 1999

Application

High speed power switching

Features

• Low on-resistance

• RDS(on) = 7 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

2SK2553

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 60 V

Gate to source voltage VGSS ±20 V

Drain current ID50 A

Drain peak current ID(pulse) Note 1 200 A

Body to drain diode reverse drain current IDR 50 A

Avalanche current IAP Note 3 45 A

Avalanche energy EAR Note 3 174 mJ

Channel dissipation Pch Note 2 75 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

2SK2553

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0

Gate to source breakdown

voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0

Gate to source leak current IGSS ——±10 µAV

GS = ±16 V, VDS = 0

Zero gate voltage drain current IDSS ——10µAV

DS = 60 V, VGS = 0

Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V

Static drain to source on state

resistance RDS(on) — 7 10 mΩID = 25 A

VGS = 10 V Note 1

—1016mΩI

= 25 A

VGS = 4 V Note 1

Forward transfer admittance |yfs|3555—SI

= 25 A

VDS = 10 V Note 1

Input capacitance Ciss — 3550 — pF VDS = 10 V

Output capacitance Coss — 1760 — pF VGS = 0

Reverse transfer capacitance Crss — 500 — pF f = 1 MHz

Turn-on delay time td(on) — 35 — ns ID = 25 A

Rise time tr— 230 — ns VGS = 10 V

Turn-off delay time td(off) — 470 — ns RL = 1.2 Ω

Fall time tf— 360 — ns

Body to drain diode forward

voltage VDF — 0.85 — V IF = 50 A, VGS = 0

Body to drain diode reverse

recovery time trr — 135 — ns IF = 50 A, VGS = 0

diF / dt = 50 A / µs

Note 1. Pulse Test

See characteristic curves of 2SK2529.

2SK2553

100

Channel Dissipation Pch (W)

50 100 150 200

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

500

200

100

0.5

0.1 0.3 1 310 30 100

Operation in

this area is

limited by R DS(on)

Ta = 25 °C

10 µs

100 µs

1 ms

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

0.3

0.1

0.03

0.01

10 µ 100 µ 1 m 10 m

Pulse Width PW (S)

Normalized Transient Thermal Impedance

100 m 1 10

s (t)

D = PW

ch – c(t) = s (t) • ch – c

ch – c = 1.67 °C/W, Tc = 25 °C

θ γ θ

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Normalized Transient Thermal Impedance vs. Pulse Width

2SK2553

Vin Monitor

D.U.T.

Vin

10 V

= 30 V

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50Ω

90%

10%

Switching Time Test Circuit Waveform

D. U. T

Monitor

VDD

50Ω

Vin

15 V

VDS

IAP

V(BR)DSS

VDD

E = • L • I •

V – V

AR AP DSS

DSS DD

Avalanche Test Circuit Avalanche Waveform

2SK2553

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SK2553

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK2553

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK2553

Cautions

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intellectual property rights, in connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

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