MII100-12A3 IGBT (NPT) Module VCES = 2x 1200 V I C25 = 135 A VCE(sat) = 2.2 V Phase leg Part number MII100-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, Fans Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a MII100-12A3 Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25C TC = 25C I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 75 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 3 mA; VGE = VCE I CES collector emitter leakage current VCE = VCES; VGE = 0 V gate emitter leakage current VGE = 20 V total gate charge VCE = 600 V; VGE = 15 V; IC = t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 600 V; IC = 2.7 V 6.5 V 5 mA TVJ = 25C TVJ = 25C 75 A VGE = 15 V; R G = 15 VGE = 15 V; R G = 15 VCEmax = 1200 V t SC short circuit duration VCE = 1200 V; VGE = 15 V R G = 15 ; non-repetitive thermal resistance junction to case R thCH thermal resistance case to heatsink A A 2.2 V 2.7 4.5 5.5 mA 7.5 nA 350 nC 100 ns 50 ns 650 ns 50 ns 12.1 mJ 10.5 mJ TVJ = 125 C VCEmax = 1200 V I SC V W 75 A short circuit safe operating area R thJC 30 135 90 TVJ = 125 C SCSOA short circuit current V 300 inductive load VCE = 20 560 TVJ = 125 C Q G(on) Unit V TC = 25C TVJ = 25C I GES max. 1200 TC = 80 C TVJ = 125 C I CM typ. TVJ = 125 C 150 A 10 s A 270 0.22 K/W K/W 0.22 Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 150 A TC = 80 C 95 A TVJ = 25C 2.50 V 1 mA I F 80 VF forward voltage IF = IR reverse current VR = VRRM 75 A TVJ = 125C TVJ = 25C TVJ = 125C Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved VR = 600 V -di F /dt = 600 A/s IF = 75 A; VGE = 0 V TVJ = 125C V 1.70 1.5 mA 7 C 62 A 200 ns 1.2 mJ 0.45 K/W 0.45 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20131206a MII100-12A3 Package Ratings Y4 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature max. 300 Unit A -40 150 C -40 125 C Tstg storage temperature -40 125 C Weight 110 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air 2.25 2.75 Nm 4.5 5.5 Nm 10.0 mm 16.0 mm 3600 V 3000 V 2D Matrix Part Number MII100-12A3 Equivalent Circuits for Simulation V0 16.0 g Circuit Diagram yywwA YYYYYYYYYYY Ordering Standard I 14.0 50/60 Hz, RMS; IISOL 1 mA t = 1 minute Part No. terminal to terminal terminal to backside t = 1 second isolation voltage Assembly Line Date Code typ. R0 Marking on Product MII100-12A3 Delivery Mode Box IGBT Diode threshold voltage 1.5 1.3 V R 0 max slope resistance * 13.6 6.5 m (c) 2013 IXYS all rights reserved Code No. 466743 T VJ = 150 C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a MII100-12A3 Outlines Y4 67 0.2 7.7 5 0.25 +0.3 - 0.1 +0.5 - 0.2 29.5 30 0.3 7.5 2.8 x0.5 M5 O 6.5 94 0.3 80 0.2 O 12 5 4 8 9 28 0.15 3 18.5 0.15 2 34 0.2 15 0.2 7 6 1 10 11 M5 x10 17 0.2 40 0.2 General tolerances: DIN ISO 2768-T1-m 63 0.2 1 7 6 3 4 5 2 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a MII100-12A3 IGBT 175 175 VGE =17 V TVJ = 25C 15 V 150 150 VGE =17 V TVJ = 125C VCE = 20 V TVJ = 25C 15 V 150 125 13 V 13 V 125 125 IC 100 100 11 V 11 V IC 100 IC [A] 75 [A] 75 [A] 75 50 25 50 9V 50 9V 25 25 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3.5 VCE [V] 0 5 6 7 VCE [V] Fig. 1 Typ. output characteristics 9 10 Fig. 3 Typ. transfer characteristics 40 120 20 30 90 15 t Eoff 60 10 800 VCE = 600 V IC = 75 A 15 t d(on) VGE Eon 10 20 [V] [mJ] 5 [ns] 10 0 tr VCE = 600 V VGE = 15 V Eon RG = 15 TVJ = 125C 100 200 300 400 500 0 50 100 5 0 0 150 Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. turn on energy & switching times versus collector current VCE = 600 V VGE = 15 V Eoff [ns] RG = 15 TVJ = 125C 200 0 50 100 150 IC [A] 25 td(on) VCE = 600 V VGE = 15 V IC = 75 A TVJ = 125C 20 t 0 IC [A] 0.20 600 400 [mJ] 30 QG [nC] 0.25 td(off) tf 0 0 11 VGE [V] Fig. 2 Typ. output characteristics 20 8 200 160 ZthJC Fig.6 Typ. turn off energy & switching times versus collector current 25 2000 VCE = 600 V VGE = 15 V IC = 75 A TVJ = 125C 20 td(off) 1600 Eoff 0.15 Eon single pulse [K/W] 15 120 Eon [mJ] 10 0.10 t tr 80 t 15 1200 [mJ] [ns] Eoff 10 800 400 [ns] 0.05 -4 10 10 -3 10 -2 10 -1 0 10 5 40 5 0 0 0 0 8 16 24 32 40 48 56 tf 0 8 16 24 32 40 48 0 56 t [s] RG [ ] RG [ ] Fig. 12 Typical transient thermal impedance Fig. 9 Typ. turn on energy & switching times versus gate resistor Fig. 9 Typ. turn off energy & switching times versus gate resistor IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a MII100-12A3 Diode 300 0.5 250 0.4 ZthJC 200 0.3 IF 150 [K/W] single pulse [A] 0.2 100 TJ = 125C 0.1 50 0 0.5 TJ = 25C 1.0 1.5 2.0 2.5 3.0 3.5 VF [V] Fig. 1 Typ. Forward current vs. VF IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 10-4 10-3 10-2 10-1 100 t [s] Fig. 2 Typ. transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a