PD - 95266A IRF7331PbF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These N-Channel HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. VDSS RDS(on) max (mW) ID 30@VGS = 4.5V 45@VGS = 2.5V 7.0A 5.6A 20V S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 20 7.0 5.5 28 2.0 1.3 16 12 -55 to + 150 V A W mW/C V C Thermal Resistance Symbol RJL RJA www.irf.com Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. Max. Units --- --- 42 62.5 C/W 1 07/09/08 IRF7331PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.6 14 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.013 --- --- --- --- --- --- --- --- 13 3.7 2.1 7.6 22 110 50 1340 170 120 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 30 VGS = 4.5V, ID = 7.0A m 45 VGS = 2.5V, ID = 5.6A 1.2 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 7.0A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 12V nA -100 VGS = -12V 20 ID = 7.0A --- nC VDS = 10V --- VGS = 4.5V --- VDD = 10V --- ID = 1.0A ns --- RG = 53 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 16V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units 2.0 28 --- --- --- --- 31 15 1.2 47 23 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.0A, VGS = 0V TJ = 25C, IF = 2.0A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7331PbF 1000 100 VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 10 1.50V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 1.50V 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 V DS = 15V 20s PULSE WIDTH 2.5 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 2.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics VGS , Gate-to-Source Voltage (V) 20s PULSE WIDTH TJ = 150 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 1 1.5 VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V TOP TOP 3.0 ID = 7.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7331PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 2000 C, Capacitance(pF) Coss = Cds + Cgd 1600 Ciss 1200 800 400 Coss 8 ID = 7.0A VDS = 10V VGS , Gate-to-Source Voltage (V) 2400 6 4 2 Crss 0 1 10 0 100 0 4 VDS, Drain-to-Source Voltage (V) 100 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 10 TJ = 150 C 1 TJ = 25 C V GS = 0 V 0.4 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 12 16 20 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.1 0.2 8 QG , Total Gate Charge (nC) 1.2 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100sec 1msec 1 10msec 0.1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7331PbF 8.0 RD VDS I D , Drain Current (A) VGS 6.0 RG D.U.T. + -V DD VGS 4.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.05 RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to -Source On Resistance () IRF7331PbF 0.04 0.03 ID = 7.0A 0.02 0.01 2.0 4.0 6.0 8.0 0.12 0.10 0.08 0.06 VGS = 2.5V 0.04 0.02 VGS = 4.5V 0.00 0 5 VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 10 15 20 25 30 ID , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. QG VGS QGS 50K 12V .2F .3F QGD VG D.U.T. + V - DS VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform 6 Fig 14b. Gate Charge Test Circuit www.irf.com 1.2 60 1.1 50 1.0 40 ID = 250A 0.9 Power (W) VGS(th) Gate threshold Voltage (V) IRF7331PbF 0.8 30 20 0.7 10 0.6 0 0.5 -75 -50 -25 0 25 50 75 100 T J , Temperature ( C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF7331PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H ;E >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & $ \ >@ ;F ;/ & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRF7331PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2008 www.irf.com 9