MITSUBISHI RF POWE R MOS FET
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B MITSUBISHI ELECTRIC 30 Jul 2007
2/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 21.9 W
Pin Input Power Zg=Zl=50Ω 0.1 W
ID Drain Current - 1.5 A
Tch Junction temperature - 150 °C
Tstg Storage temperature - -40 to +125 °C
Rth j-c Thermal resistance Junction to case 5.7 °C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Drain cutoff current VDS=17V, VGS=0V - - 100 uA
IGSS Gate cutoff current VGS=10V, VDS=0V - - 1 uA
Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 1.8 3 V
Pout1 Output power 2 3 - W
ηD1 Drain efficiency
VDD=7.2V, Pin=50mW,
f=175MHz Idq=200mA 55 65 - %
Pout2 Output power 2 3 - W
ηD2 Drain efficiency
VDD=7.2V, Pin=50mW,
f=520MHz Idq=200mA 50 65 - %
Load VSWR tolerance
VDD=9.2V,Po=2W(Pin Control)
f=175MHz,Idq=200mA,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Load VSWR tolerance
VDD=9.2V,Po=2W(Pin Control)
f=520MHz,Idq=200mA,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note: Above parameters, ratings, limits and conditions are subject to change.