IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR C Features Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead-free package IC = 35A, TC = 100C Package Type IRG7PG35UPbF IRG7PG35U-EPbF TO-247AC TO-247AD TJ(MAX) = 175C G E VCE(ON) typ. = 1.9V@ IC = 20A n-channel C C Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation Applications U.P.S. Welding Solar Inverter Induction heating Base part number VCES = 1000V G C E GC IRG7PG35U-EPbF TO-247AD IRG7PG35UPbF TO-247AC G Gate C Collector Standard Pack Form Quantity Tube Tube E E Emitter Orderable Part Number IRG7PG35UPbF IRG7PG35U-EPbF 25 25 Absolute Maximum Ratings VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 1000 55 35 60 80 30 210 105 -55 to +175 Units V A V W C 300 (0.063 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf*in (1.1 N*m) Thermal Resistance Parameter RJC (IGBT) Junction-to-Case (IGBT) RCS Case-to-Sink (flat, greased surface) RJA Junction-to-Ambient (typical socket mount) 1 www.irf.com (c) 2014 International Rectifier Min. --- --- --- Typ. --- 0.24 --- Submit Datasheet Feedback Max. 0.70 --- 40 Units C/W April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage 1000 -- -- 1.2 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 1.9 VCE(on) Collector-to-Emitter Saturation Voltage -- 2.3 -- 2.4 VGE(th) Gate Threshold Voltage 3.0 -- -- -16 VGE(th)/TJ Gate Threshold Voltage temp coefficient. gfe Forward Transconductance -- 22 ICES Collector-to-Emitter Leakage Current -- 2.0 -- 2000 IGES Gate-to-Emitter Leakage Current -- -- Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Qg Total Gate Charge -- 85 Qge Gate-to-Emitter Charge -- 15 Qgc Gate-to-Collector Charge -- 35 Eon Turn-On Switching Loss -- 1060 Eoff Turn-Off Switching Loss -- 620 Etotal Total Switching Loss -- 1680 td(on) Turn-On delay time -- 30 tr Rise time -- 15 td(off) Turn-Off delay time -- 160 tf Fall time -- 80 Eon Turn-On Switching Loss -- 1880 Eoff Turn-Off Switching Loss -- 1140 Etotal Total Switching Loss -- 3020 td(on) Turn-On delay time -- 25 tr Rise time -- 20 td(off) Turn-Off delay time -- 200 tf Fall time -- 200 Cies Input Capacitance -- 1940 Coes Output Capacitance -- 60 Cres Reverse Transfer Capacitance -- 40 RBSOA Reverse Bias Safe Operating Area Max. Units Conditions -- V VGE = 0V, IC = 100A -- V/C VGE = 0V, IC = 1.0mA (25C-150C) 2.2 IC = 20A, VGE = 15V, TJ = 25C -- IC = 20A, VGE = 15V, TJ = 150C V -- IC = 20A, VGE = 15V, TJ = 175C 6.0 V VCE = VGE, IC = 600A -- mV/C VCE = VGE, IC = 600A (25C-150C) -- S VCE = 50V, IC = 20A, PW = 30s 100 A VGE = 0V, VCE = 1000V -- VGE = 0V, VCE = 1000V, TJ = 175C 100 nA VGE = 30V Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- FULL SQUARE Units nC J ns J ns pF Conditions IC = 20A VGE = 15V VCC = 600V IC = 20A, VCC = 600V, VGE = 15V RG = 10, L = 200H, TJ = 25C Energy losses include tail & diode reverse recovery Diode clamp the same as IRG7PH35UDPbF IC = 20A, VCC = 600V, VGE = 15V RG = 10, L = 200H, TJ = 175C Energy losses include tail & diode reverse recovery Diode clamp the same as IRG7PH35UDPbF VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175C, IC = 80A VCC = 800V, Vp 1000V Rg = 10, VGE = +20V to 0V Notes: VCC = 80% (VCES), VGE = 20V, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90C. 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF 45 For both: Duty cycle : 50% Tj = 150C Tc = 100C Gate drive as specified Power Dissipation = 70W 40 Load Current ( A ) 35 30 25 20 Square Wave: VCC 15 I 10 Diode as specified 5 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 60 250 50 200 Ptot (W) IC (A) 40 30 20 10 150 100 50 0 25 50 75 100 125 150 0 175 0 25 50 TC (C) 75 100 125 150 175 TC (C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 100 1000 10 s 100 IC (A) IC (A) 10 100 s 1 10 1ms DC 0.1 1 1 10 100 1000 10000 V CE (V) Fig. 4 - Forward SOA TC = 25C, TJ 175C; VGE = 15V 3 www.irf.com (c) 2014 International Rectifier 10 100 1000 10000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 175C; VGE = 20V Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF 80 80 VGE = 18V VGE = 15V 70 VGE = 12V VGE = 10V VGE = 8.0V 50 VGE = 18V VGE = 15V VGE = 12V 60 VGE = 10V VGE = 8.0V 50 ICE (A) 60 ICE (A) 70 40 40 30 30 20 20 10 10 0 0 0 2 4 6 8 10 0 2 4 VCE (V) 8 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 50 7 6 VCE (V) 70 ICE (A) 10 Fig. 7 - Typ. IGBT Output Characteristics TJ = 25C; tp = 30s 80 40 30 5 ICE = 10A ICE = 20A 4 ICE = 40A 20 3 10 2 0 0 2 4 6 8 1 10 4 8 12 16 Fig. 9 - Typical VCE vs. VGE TJ = -40C Fig. 8 - Typ. IGBT Output Characteristics TJ = 175C; tp = 30s 8 7 7 6 6 ICE = 10A 5 5 ICE = 40A VCE (V) 8 ICE = 10A ICE = 20A ICE = 40A 4 20 VGE (V) VCE (V) VCE (V) 8 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40C; tp = 30s ICE = 20A 4 3 3 2 2 1 1 5 10 15 20 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25C 4 6 www.irf.com (c) 2014 International Rectifier 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175C Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF 4000 70 3000 60 50 Energy (J) IC, Collector-to-Emitter Current (A) 80 40 TJ = 175C 30 EON 2000 EOFF 20 1000 TJ = 25C 10 0 0 4 5 6 7 8 9 10 0 10 20 Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 30s 40 Fig. 13 - Typ. Energy Loss vs. IC TJ = 175C; L = 680H; VCE = 600V, RG = 10; VGE = 15V 3500 1000 tdOFF 3000 EON tF 100 2500 Energy (J) Swiching Time (ns) 30 IC (A) VGE, Gate-to-Emitter Voltage (V) tdON 2000 EOFF 1500 10 tR 1000 500 1 0 10 20 30 0 40 IC (A) Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L = 680H; VCE = 600V, RG = 10; VGE = 15V 10000 20 40 60 80 100 RG () Fig. 15 - Typ. Energy Loss vs. RG TJ = 175C; L = 680H; VCE = 600V, ICE = 20A; VGE = 15V 10000 1000 Capacitance (pF) Swiching Time (ns) Cies tdOFF tF 100 1000 100 Coes tdON tR 10 0 Cres 10 20 40 60 80 100 0 100 200 300 400 500 600 RG () VCE (V) Fig. 16 - Typ. Switching Time vs. RG TJ = 175C; L = 680H; VCE = 600V, ICE = 20A; VGE = 15V Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 VGE(th), Gate Threshold Voltage (Normalized) IRG7PG35UPbF/IRG7PG35U-EPbF VGE, Gate-to-Emitter Voltage (V) 16 14 VCES = 600V VCES = 400V 12 10 8 6 4 2 0 0 20 40 60 80 1.0 IC = 600A 0.8 0.6 0.4 100 25 50 75 100 125 150 175 Q G, Total Gate Charge (nC) TJ , Temperature (C) Fig. 18 - Typical Gate Charge vs. VGE ICE = 20A Fig. 19 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 R1 R1 J 1 R3 R3 1 2 2 3 3 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 R4 R4 C Ci= iRi Ci= iRi 0.01 0.01 R2 R2 4 4 C Ri (C/W) i (sec) 0.017 0.000013 0.218 0.000141 0.299 0.002184 0.177 0.013107 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 6 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF L L VCC DUT 0 80 V + DUT - 1K Vclamped Rg Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) C force DIODE CLAMP L 100K D1 22K C sense DUT / DRIVER VCC 0.0075 G force DUT Rg E sense E force Fig.C.T.3 - Switching Loss Circuit 7 www.irf.com (c) 2014 International Rectifier Fig.C.T.4 - BVCES Filter Circuit Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF 600 90% ICE V C E (V) 500 400 300 200 5% ICE 0 -100 -0.5 Eoff Loss 0.5 700 30 600 25 500 20 400 15 5% VCE 100 35 200 5 100 0 0 1.5 time(s) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.3 8 www.irf.com (c) 2014 International Rectifier 70 tr TEST CURRENT 60 50 40 90% test current 300 10 -5 80 30 ICE (A) tf 800 VCE (V) 700 40 I C E (A) 800 20 10% test current 5% VCE 10 0 Eon Loss -100 -0.5 -10 -0.3 -0.1 0.1 0.3 0.5 time (s) Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175C using Fig. CT.3 Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF Qualification Information Industrial Qualification Level Moisture Sensitivity Level TO-247AC N/A TO-247AD Yes RoHS Compliant Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: IRG7PG35UPBF IRG7PG35U-EPBF