Standard Power MOSFETs 2N6782 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 3.5A, 100V ros(on) = 0.60 Features: SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance @ Majority carrier device The 2N6782 is an n-channel enhancement-mode silicon- gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operatec| directly from integrated circuits. The 2N6782 is supplied in the JEDEC TO-205AF (LOW PROFILE TO-39) metal package. Absolute Maximum 3-504 File Number 1592 N-CHANNEL ENHANCEMENT MODE $s 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION GATE 5) DRAIN SOURCE (CASE) 92CS-37555 JEDEC TO-205AFStandard Power MOSFETs 2N6782 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) See Fig. 10 See Fig. 15 (MOSFET switching times are assentially independent of operating temperature.) Thermal Resistance [Pinyc _Junction-to-Case L-.L- [28 [ecw] ] [Rega Junction-to-Ambient [ - [ - | 178 [-c-w [ Free Air Operation _| Source-Drain Diode Switching Characteristics (Typical) tr Reverse Recovery Time 200 Tre _] ty = 150C, ip = 35A, dipidt = 100A/us Qrr Reverse Recovered Charge 1.0 Lae [Ty = 180C, Ip = 3.5A, dipidt = 100Aus L ton Forward Turn-on Time - intrinsic turn-on time is negiigible. Turn-on speed is substantially controlled by Ls + Lp. Ty = 26C to 150C, Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width. limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). JEDEC registered value 12 7" peek TEST, Vos > pion) * = g 2 & z 8 2 z = = 6 Land Zz z = & = = * s 3 3 z 2 z = < z : S 2 2 a 0 10 30 40 50 60 4 10 2 18 Vos. ORAIN-TO-SOUACE VOLTAGE (VOLTS) Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 ~ Typical Transfer Characteristics TION IN THIS 1S LIMITED BY Rps(on} a a Fe @ = = & = = = = = : E = = & a 2 = & = 3 3 z z 5 g 2a 5 Te = 2500 ~ Ty = 150C MAX. Ange = 8.33 C. pc 0 1 2 3 4 5 6 7 10 2 5 10 20 80 100 200 500 Vas. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vps, DRAIN-TO-SOUACE VOLTAGE {VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area 3-505Standard Power MOSFETs 2N6782 3-506 Zinscltl/ Rinse, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT} BVos5 DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 10 05 02 . 4 O4 | Q 0.5 1 OUTY FACTOR, D = + 0.02 SINGLE PULSE 2. PER UNIT BASE = Rynjc * 8.33 DEG. CW s THERMAL IMPEDANCE) 3 Ty To = Pom Zac! oot 05 2 5 we 2 s 103 02 5 we 2 5 wt 2 5 10 2 5 11, SQUARE WAVE PULSE OURATION (SECONDS) Fig. 5 Maxi Effective Transient Thermal cd. ion-to-Case Vs. Pulse Duration 0s PULSE Ty = 25C Ty= 125C 1s. TRANSCONDUCTANCE (SIEMENS) lpg. REVERSE DRAIN CURRENT (AMPERES) 0 2 4 6 a to 2 4 0 a4 08 1.2 16 20 22 24 [p. ORAIN CURRENT (AMPERES} Vgq. SOURCE-TO-DRAIN VOLTAGE {VOLTS} Fig. 6 Typical Transconductance V's. Drain Current Fig. 7 Typicat Source-Drain Diode Forward Voltage 125 250 1.20 5 3 2 = 115 5 2.00 8 1.10 = VS # = SB 105 aS 150 x s 3 wz zg SE 1% = 35 2 95 22 1.00 e 2 0.90 Zz 05 = a 0.85 = 050 a 3 0.80 = 0.25 0.75 0 40 40-20-0204 DBs 12040 60 40 -20 0 20 40 60 80 100 120 140 Ty, JUNCTION TEMPERATURE (C) 7), JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. TemperatureStandard Power MOSFETs 2N6782 0 t= 1 MHz # . . al Cod, Cds SHORTED 3 me = < Sy Coa, @ & Coss Cys + te ted z z Cas + Cyd e 3 3 z 5 < o S 2 S E a # = S a 2 > Crs 9 10 Pill 30 a0 Q 2 4 6 a 10 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Qy, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 20 Boston}. DRAIN-TO-SQUACE ON RESISTANCE {QHMS) Rpston) WITH CURRENT PULSE (IF 2.0 us DURATION. INITIAL Ty = 25C. (HEAT NG EFFECT OF 2.0 ys PULSE IS MINIMAL} 2 in 1p, DRAIN CURRENT (AMPERES) s in 0 6 19 15 20 rT 50 6 100 125 150 Ig. DRAIN CURRENT (AMPERES) Tc, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 20 Py, POWER DISSIPATION (WATTS) s a a o 20 40 60 80 100 120 140 Tg, CASE TEMPERATURE (9C) Fig. 14 Power Vs. Temperature Derating Curve 3-507Standard Power MOSFETs 2N6782 je PULSE WIDTH Vosion} +10V___ . INPUT som 0% 90% 1 Vgsiats) 80 INPUT PULSE _ INPUT PULSE RISE TIME FALL TIME tg 1 * (on) "| 7 (otf) Vostott) or0a TEKTRONIX OUTPUT 10% o% 1623 0% ben osc. Vastea) 10% NOTES WHEN MEASURING RISE TIME. Vggign) SHALL BE AS SPECIFIED ON THE INPUT WAVEFORM. WHEN MEASURING FALL TIME, Vggigi) SHALL BE SPECIFIED ON THE INPUT WAVEFORM. THE INPUT TRANSITION AND ORAIN VOLTAGE RE- SPONSE DETECTOR SHALL HAVE RISE AND FALL RESPONSE TIMES SUCH THAT NOTES: DOUBLING THESE RESPONSES WILL NOT AFFECT THE RESULTS GREATER 1. LHO063 CASE GROUNDED. THAN THE PRECISION OF MEASUREMENT, THE CURRENT SHALL BE SUFFI- 2. GROUNDED CONNECTIONS COMMON TO GROUND PLANE ON BOARD. CIENTLY SMALL SO THAT DOUBLING IT DOES NOT AFFECT TESTS RESULTS 3. PULSE WIDTH =3 ys, PERIOD=1 ms, AMPLITUDE=10V. GREATER THAN THE PRECISION OF MEASUREMENT. Fig. 15 Switching Time Test Circuit ONs PULSE o BLOCKING BIGDE 479 NOTES 1. SET Vps TO THE VALUE SPECIFIED UNDER DETAILS USING A 0.15 PULSE WIDTH WITH A MINIMUM OF 1 MINUTE BETWEEN PULSES. INCREASE Vgg UNTIL THE SPECIFIED VALUE OF Ip AND Vog ANE OBTAINED. CASE TEMPERATURE = 259C. 2. SELECT Rg SUCH THAT Ip Rg = 2.5 + 1.0 Vde. Fig. 16 Safe Operating Area Test Circuit 3-508High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65