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CM20MD3-12H
CI Module
Single Phase Conver ter + Three Phase Inverter
20 Amperes / 600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics Symbol CM20MD3-12H Units
Power Device Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Mounting Torque, M4 Mounting Screws — 13 in-lb
Module Weight (Typical) — 60 Grams
Isolation Voltage, AC 1 minute, 60Hz VRMS 2500 Volts
Converter Sector
Repetitive Peak Reverse Voltage VRRM 800 Volts
Recommended AC Input Voltage Ea220 Volts
DC Output Current IO15 Amperes
Surge (Non-repetitive) Forward Current IFSM 375 Amperes
I2t for Fusing I2t 585 A2s
IGBT Inverter Sector
Collector-Emitter Voltage (G-E Short) VCES 600 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current IC20 Amperes
Collector Current (Pulse)* ICM 40 Amperes
Emitter Current** IE20 Amperes
Emitter Current** (Pulse)* IEM 40 Amperes
Maximum Collector Dissipation PC57 Watts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Converter Sector
Repetitive Reverse Current IRRM VR = VRRM, Tj = 150°C——8mA
Forw ard V oltage Drop VFM IF = 25A — — 1.5 Volts
Thermal Resistance (Junction-to-Fin) Rth(j-f) Per Diode — — 3.3 °C/W
IGBT Inverter Sector
Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1 mA
Gate-Emitter Threshold Voltage VGE(th) VCE = 10V, IC = 2.0mA 4.5 6.0 7.5 Volts
Gate-Emitter Cutoff Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15V, IC = 20A, Tj = 25°C — 2.1 2.8 Volts
VGE = 15V, IC = 20A, Tj = 150°C — 2.15 — Volts
Input Capacitance Cies — — 2.0 nF
Output Capacitance Coes VGE = 0V, VCE = 10V — — 1.5 nF
Re verse Transfer Capacitance Cres — — 0.4 nF
Total Gate Charge QGVCC = 300V, IC = 20A, VGE = 15V — 60 — nC
Resistive Turn-on Delay Time td(on) VGE1 = VGE2 = 15V, — — 120 nS
Load Rise Time trVCC = 300V, IC = 20A, — — 300 nS
Switching Turn-off Delay Time td(off) Rg = 31Ω,——200nS
Times F all Time tfResistive Load — — 300 nS
Emitter-Collector V oltage VEC IE = 20A, VGE = 0V — — 2.8 Volts
Reverse Recovery Time trr IE = 20A, VGE = 0V, — — 110 nS
Reverse Recovery Charge Qrr diE/dt = -40A/µs — 0.05 — µC
Thermal Resistance (Junction-to-Fin) Rth(j-f) Per IGBT — — 2.2 °C/W
Per FWDi — — 3.1 °C/W
*Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating.
**Characteristics of the anti-parallel emitter-collector free-wheel diode.