2SK1817-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier DC-DC converters 2.54 3. Source JEDEC EIAJ SC-67 Equivalent circuit schematic Maximum ratings and characteristics Absolute maximum ratings ( Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 100 20 80 20 20 40 +150 -55 to +150 Unit V A A A V W C C Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance IGSS RDS(on) Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time gfs Ciss Coss Crss td(on) tr td(off) tf V SD t rr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=100V VGS=0V Min. Typ. Max. 100 1.0 Tch=25C Tch=125C VGS=20V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS =25V VGS=0V f=1MHz VCC=30V RG=25 ID=20A VGS=10V IF=2xIDR VGS=0V Tch=25C IF=IDR di/dt=100A/s Tch=25C 1.5 2.5 10 500 0.2 1.0 10 100 70 120 53 80 10.0 20.0 1850 2780 400 600 120 180 5 8 50 75 350 530 100 150 1.22 1.83 70 Units V V A mA nA m S pF ns V ns Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min. Typ. Max. 62.5 3.125 Units C/W C/W 1 2SK1817-MR FUJI POWER MOSFET Characteristics Typical output characteristics On state resistance vs. Tch 40 1.5 30 1.0 ID [ A ] 20 RDS(on) [] 0.5 10 0 0 2 4 6 0 8 -50 0 VDS [ V ] 50 100 150 Tch [ C ] Typical Drain-Source on state resistance vs. ID Typical transfer characteristics 40 0.3 30 RDS(on) [ ] 0.2 ID 20 [A] 0.1 10 0 0 0 2 4 6 0 8 10 20 ID [ A ] VGS [ V ] 30 40 Gate threshold voltage vs. Tch Typical forward transconductance vs. ID 30 3.0 20 2.0 gfs [S] VGS(th) [V] 10 1.0 0 0 0 10 ID 20 [A] 30 40 -50 0 50 100 150 Tch [ C ] 2 2SK1817-MR FUJI POWER MOSFET Typical capacitance vs. VDS Typical input charge 100 20 10 80 5 15 C [nF] 60 VDS [V] 1 10 VGS [V] 40 0.5 5 20 0.1 0 0 10 20 30 0 40 50 100 VDS [ V ] 150 0 200 Qg [ nC ] Allowable power dissipation vs. Tc Forward characteristics of reverse diode 50 50 40 10 30 5 IF [A] PD [W] 20 1 10 0.5 0 0 0.5 1.0 1.5 0 50 VSD [ V ] 100 150 Tc [ C ] Safe operating area 100 50 Transient thermal impedance 10 ID [A] 5 100 Rth [C/W] 10-1 1 0.5 10-2 -5 10 10-4 10-3 10-2 t [ sec. ] 10-1 100 101 1 5 10 50 VDS [ V ] 100 500 3