1
Item Symbol Rating Unit
Drain-source voltage V DS 100
Continuous drain current ID20
Pulsed drain current ID(puls] 80
Continuous reverse drain current IDR 20
Gate-source peak voltage VGS ±20
Max. power dissipation PD40
Operating and storage Tch +150
temperature range Tstg
2SK1817-MR FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
V
A
A
A
V
W
°C
°C
-55 to +150
JEDEC
EIAJ
Outline Drawings
F- III SERIES
Features
High current
Low on-resistance
No secondary breakdown
Low driving power
High forward transconductance
Applications
Motor controllers
General purpose power amplifier
DC-DC converters
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
Min. Typ. Max. Units
V
V
µA
mA
nA
mΩ
S
pF
ns
V
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-a) channel to ambient
Rth(ch-c) channel to case 62.5
3.125 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Diode forward on-voltage
Reverse recovery time
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=100V V GS=0V Tch=25°C
Tch=125°C
VGS=±20V VDS=0V
ID=10A VGS=4V
ID=10A VGS=10V
ID=10A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=25 Ω
ID=20A
VGS=10V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR di/dt=100A/µs Tch=25°C
100
1.0 1.5 2.5
10 500
0.2 1.0
10 100
70 120
53 80
10.0 20.0
1850 2780
400 600
120 180
58
50 75
350 530
100 150
1.22 1.83
70
SC-67
TO-220F15
3. Source
2.54
2
Characteristics
2SK1817-MR
FUJI POWER MOSFET
Typical output characteristics
VDS [ V ]
ID
[ A ]
On state resistance vs. Tch
RDS(on)
[ Ω ]
Tch [ °C ]
Typical transfer characteristics
VGS [ V ]
ID
[ A ]
Typical Drain-Source on state resistance vs. ID
ID [ A ]
RDS(on)
[ Ω ]
Typical forward transconductance vs. ID
ID [ A ]
gfs
[ S ]
Gate threshold voltage vs. Tch
Tch [ °C ]
VGS(th)
[ V ]
0 10 20 30 40
0 2 4 6 8
0 10 20 30 40
0.3
0.2
0.1
0
40
30
20
10
0
1.5
1.0
0.5
0
30
20
10
0 -50 0 50 100 150
-50 0 50 100 150
40
30
20
10
0 0 2 4 6 8
3.0
2.0
1.0
0
3
FUJI POWER MOSFET
Typical capacitance vs. VDS
VDS [ V ]
C
[nF]
Typical input charge
VDS
[ V ]
Qg [ nC ]
Forward characteristics of reverse diode
0 0.5 1.0 1.5
VSD [ V ]
IF
[ A ]
Allowable power dissipation vs. Tc
Tc [ °C ]
PD
[ W ]
Transient thermal impedance
t [ sec. ]
Rth
[°C/W]
Safe operating area
ID
[ A ]
VDS [ V ]
1 5 10 50 100 500
20
15
10
5
0
VGS
[ V ]
50
10
5
1
0.5
2SK1817-MR
10
5
1
0.5
0.1
0 10 20 30 40
100
80
60
40
20
0 0 50 100 150 200
50
40
30
20
10
0 0 50 100 150
100
10-1
10-2
10-5 10-4 10-3 10-2 10-1 100 101
100
50
10
5
1
0.5
