2SK2328
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switchingregulator, DC-DC converter
Outline
123
TO-220AB
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
2SK2328
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 650 V
Gate to source voltage VGSS ±30 V
Drain current ID7A
Drain peak current ID(pulse)*128 A
Body to drain diode reverse drain current IDR 7A
Channel dissipation Pch*275 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2SK2328
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 650 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µAV
DS = 550 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 1.0 1.4 ΩID = 4A
VGS = 10 V*1
Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A
VDS = 10 V*1
Input capacitance Ciss — 1180 — pF VDS = 10 V
VGS = 0
f = 1 MHz
Output capacitance Coss — 265 — pF
Reverse transfer capacitance Crss — 50 — pF
Turn-on delay time td(on) —15—nsI
D
= 4 A
VGS = 10 V
RL = 7.5 Ω
Rise time tr—50—ns
Turn-off delay time td(off) — 105 — ns
Fall time tf—45—ns
Body-drain diode forward
voltage VDF — 0.95 — V IF = 7 A, VGS = 0
Body-drain diode reverse
recovery time trr — 420 — ns IF = 7 A, V GS = 0,
diF / dt = 100 A / µs
Note 1. Pulse Test
See characteristic curves of 2SK1403A
2SK2328
4
100
75
50
25
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
1
Maximum Safe Operation Area
3 10 30 100 300 1000
50
20
10
2
5
1
0.2
0.1
0.05
100 µs
10 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25 °C)
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
0.5
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m
Pulse Width PW (S)
Normalized Transient Thermal Impedance
100 m 1 10
s (t)
γ
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.67 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Normalized Transient Thermal Impedance vs. Pulse Width
2SK2328
5
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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