CY62126BV
4
Switching Characteristics[5] Over the Operating Range
62126BV–55 62126BV–70
Parameter Description Min. Max. Min. Max. Unit
READ CYCLE
tRC Read Cycle Time 55 70 ns
tAA Addr e ss to Data Va lid 55 70 ns
tOHA Dat a Hold fro m Address Change 10 10 ns
tACE CE LOW to Data Valid 55 70 ns
tDOE OE LOW to Dat a Valid 25 35 ns
tLZOE OE LOW to Lo w Z[7] 5 5 ns
tHZOE OE HIGH to High Z[6, 7] 20 25 ns
tLZCE CE LO W to Low Z[7] 10 10 ns
tHZCE CE HIGH to High Z[6 , 7] 20 25 ns
tPU CE LOW to Power-Up 0 0ns
tPD CE HIGH to Power-Down 55 70 ns
tDBE Byte Enable to Data Valid 25 35 ns
tLZBE Byte Enable to LOW Z[7] 5 5 ns
tHZBE Byte Disable to HIGH Z[6,7] 20 25 ns
WRITE CYCLE[8]
tWC Write Cycle Time 55 70 ns
tSCE CE LOW to Write End 45 60 ns
tAW Add ress Set- Up to Write End 45 60 ns
tHA Add ress Hold f rom Write End 0 0ns
tSA Add ress Set- Up to Write Start 0 0ns
tPWE WE Pulse Width 40 50 ns
tSD Data Set-Up to Write End 25 30 ns
tHD Data Hold from Write End 0 0ns
tLZWE WE HIGH to Low Z[7] 5 5 ns
tHZWE WE LOW to High Z[6,7] 25 25 ns
tBW By te Enable to End of Write 45 60 ns
Notes:
5. Test conditions assume signal trans ition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30- pF load c apacitanc e .
6. tHZOE, tHZCE, tHZWE, and tHZBE are sp ecified with a load capac itance of 5 p F as i n part (b) of A C Test L oads. Tra nsit ion is measured ±500 mV fr om stead y-s tate v oltage .
7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, tHZWE is less than tLZWE, and tHZBE is less than tLZBE, for any given device.
8. The internal write time of the memory is defined by the overlap of CE LO W and WE LOW. CE and W E must be LO W to init iate a write, and the tr ansition o f any of the se
signal s can terminate the w rite. The input d ata s et-up a nd hol d ti ming shoul d be refe renced to th e leadi ng e dge of the s ignal t hat t erminates the write. Re f er to truth ta ble f or
further conditi ons from B HE and BLE.