BP 104 S
Silizium-PIN-Fotodiode
Silicon PIN Photodiode
2001-02-21 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm
• Kurze Schaltzeit (typ. 20 ns)
• Geeignet für Vapor-Phase Löten und
IR-Reflow-Löten
• SMT-fähig
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
BP 104 S Q62702-P1605
Features
• Especially suitable for applications from
400 nm to 1100 nm
• Short switching time (typ. 20 ns)
• Suitable for vapor-phase and IR-reflow
soldering
• Suitable for SMT
Applications
• Photointerrupters
• IR remote controls
• Industrial electronics
• For control and drive circuits
2001-02-21 2
BP 104 S
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg –40 …+85 °C
Sperrspannung
Reverse voltage VR20 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotostrom VR = 5 V
Photocurrent IP55 (≥ 40) nA/lx
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ400 …1100 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A4.84 mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L×B
L×W
2.20 ×2.20 mm ×mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H0.3 mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR2 (≤ 30) nA
Spektrale Fotoempfindlichke it, λ= 850 nm
Spectral sensitivity Sλ0.62 A/W
Quantenausbeute, λ= 850 nm
Quantum yield η0.90 Electrons
Photon
BP 104 S
2001-02-21 3
Leerlaufspannung, EV= 1000 lx
Open-circuit voltage VO360 (≥ 280) mV
Kurzschlußstrom, EV= 1000 lx
Short-circuit current ISC 50 µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr, tf20 ns
Durchlaßspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C048 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TKV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TKI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 850 nm
NEP 3.6 ×10–14
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit D* 6.1 ×1012
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
BP 104 S
2001-02-21 4
Relati ve Sp ectral Sensit i vi ty
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Birectional Chara cter i sti cs
Srel = f (ϕ)
λ
OHF00078
0
rel
S
400
20
40
60
80
%
100
500 600 700 800 900 nm 1100
OHF02284
VR
Ι
R
0
10-1
100
101
102
nA
2 4 6 8 10 12 14 16 V 20
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurrent IP = f (Ev), VR = 5 V
Open-Ci r cu it V oltage VO = f (Ev)
Capacitance
C = f (VR), f = 1 MHz, E = 0
lx
3
10
O
V
P
Ι
mVAµO
V
0
10
10 1
10 2
10 3
10 43
10
2
10
1
10
0
10
4
10
2
10
1
10
10 -1
Ι
P
10 0
V
OHF02283
E
V
OHF01778
R
-2
10
C
10
-1
10
0
10
1
10
2
V
0
10
20
30
40
50
pF
60
Total Pow er Di ssip ation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10
0
10
1
10
2
10
3
nA
20 40 60 80 ˚C 100
BP 104 S
2001-02-21 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6861
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
Chip position
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.20 (0.087) x 2.20 (0.087)
1.6 (0.063)
(0...0.004)
±0.2 (0.008)
0...0.1
