IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A RDS(on) 52 m 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25 C 70 A IDM TC = 25 C, pulse width limited by TJM 250 A IAR TC = 25 C 100 A EAR TC = 25 C 100 mJ EAS TC = 25 C 5 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 2 20 V/ns PD Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS IISOL 1 mA G D 625 W -55 ... +150 150 -55 ... +150 C C C l l l FC t = 1 min t=1s Mounting force 2500 3000 V~ V~ 28..150 / 6.4..30 N/lb 5 g Weight Symbol Test Conditions (TJ = 25 C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 3 mA 500 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT, Note 1 TJ = 125 C V 5.0 V 200 nA 25 2000 A A 52 m ISOLATEDTAB D = Drain Features C 300 S G = Gate S = Source l TC = 25 C TL ISOPLUS264 l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages l l l Easy to mount Space savings High power density DS99563E(01/06) (c) 2006 IXYS All rights reserved http://store.iiic.cc/ IXFL 100N50P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = IT, Note 1 50 80 S 20 nF 1700 pF 140 pF 36 ns 29 ns 110 ns 26 ns 240 nC 96 nC 78 nC Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT td(off) RG = 1 (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd ISOPLUS264 (IXFL) Outline Note: Bottom heatsink meets 2500Vrms Isolation to the other pins. 0.20 C/W RthJC C/W 0.13 RthCS Source-Drain Diode Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 100 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/s 200 ns QRM IRM VR = 100V 0.6 6.0 Ref: IXYS CO 0128 R0 C A Notes: 1. Pulse test, t 300 s, duty cycle d 2 % Test Current IT = 50 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFL 100N50P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 100 220 V GS = 10V 8V 90 180 80 160 70 7V 60 I D - Amperes I D - Amperes V GS = 10V 9V 200 50 40 120 100 6V 30 8V 140 7V 80 60 20 40 10 20 5V 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 2 4 6 8 100 18 20 22 24 26 2.5 R DS(on) - Normalized I D - Amperes 16 V GS = 10V 2.8 70 60 50 6V 40 30 2.2 1.9 I D = 100A 1.6 I D = 50A 1.3 1 20 5V 0.7 10 0.4 0 0 1 2 3 4 5 6 7 8 9 10 -50 11 -25 0 25 50 75 100 125 150 125 150 T J - Degrees Centigrade V DS - Volts Fig. 5. R DS(on) Normalized to ID = 50A Value vs. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 3 80 V GS = 10V 2.8 70 TJ = 125C 2.6 60 2.4 2.2 I D - Amperes R DS(on) - Normalized 14 3.1 V GS = 10V 8V 7V 80 12 Fig. 4. R DS(on) Normalized to ID = 50A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125C 90 10 V DS - Volts V DS - Volts 2 1.8 1.6 1.4 TJ = 25C 50 40 30 20 1.2 10 1 0.8 0 0 20 40 60 80 100 120 140 160 180 200 220 -50 -25 0 25 50 75 T J - Degrees Centigrade I D - Amperes (c) 2006 IXYS All rights reserved http://store.iiic.cc/ 100 IXFL 100N50P Fig. 8. Transconductance Fig. 7. Input Admittance 150 160 135 140 120 120 g f s - Siemens I D - Amperes 105 100 TJ = 125C 25C - 40C 80 60 TJ = - 40C 25C 125C 90 75 60 45 40 30 20 15 0 0 4 4.5 5 5.5 6 6.5 7 0 7.5 20 40 60 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 225 250 Fig. 10. Gate Charge 300 10 V DS = 250V 9 250 I D = 50A 8 I G = 10mA 7 200 V GS - Volts I S - Amperes 80 I D - Amperes 150 100 TJ = 125C 6 5 4 3 2 TJ = 25C 50 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 25 50 V SD - Volts 75 100 125 150 175 200 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 RDS(on) Limit C iss 25s 10,000 I D - Amperes Capacitance - PicoFarads f = 1 MHz C oss 1,000 100s 100 1ms 10ms 10 TJ = 150C C rss DC TC = 25C 100 1 0 5 10 15 20 25 30 35 40 10 100 V DS - Volts V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 1000 IXFL 100N50P Fig. 13. Maximum Transient Thermal Resistance R(th)JC - C / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds (c) 2006 IXYS All rights reserved http://store.iiic.cc/ 1 10