IXFL100N50P - IXYS - Datasheet.Live

PolarHVTM HiPerFET

Power MOSFET

ISOPLUS264TM

(Electrically Isolated Back Surface)

VDSS = 500 V

ID25 = 70 A

RDS(on) ≤ ≤

≤ ≤

≤ 52 mΩΩ

ΩΩ

Ω

trr ≤ ≤

≤ ≤

≤ 200 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0 V, ID = 3 mA 500 V

VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V

IGSS VGS = ±30 VDC, VDS = 0 ±200 nA

IDSS VDS = VDSS 25 µA

VGS = 0 V TJ = 125°C 2000 µA

RDS(on) VGS = 10 V, ID = IT, Note 1 52 m Ω

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V

VGSS Continuous ±30 V

VGSM Transient ±40 V

ID25 TC= 25°C70A

IDM TC= 25°C, pulse width limited by TJM 250 A

IAR TC= 25°C 100 A

EAR TC= 25°C 100 mJ

EAS TC= 25°C5J

dv/dt IS≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ V

DSS, 20 V/ns

TJ≤ 150°C, RG = 2 Ω

PDTC= 25°C 625 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6 mm (0.062 in.) from case for 10 s 300 °C

VISOL 50/60 Hz, RMS t = 1 min 2500 V~

IISOL ≤ 1 mA t = 1 s 3000 V~

FCMounting force 28..150 / 6.4..30 N/lb

Weight 5g

IXFL 100N50P

S

G

DISOLATEDTAB

ISOPLUS264

G = Gate D = Drain

S = Source

Features

lInternational standard isolated

package

lUL recognized package

lSilicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

lUnclamped Inductive Switching (UIS)

rated

lLow package inductance

- easy to drive and to protect

lFast intrinsic diode

Advantages

lEasy to mount

lSpace savings

lHigh power density

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXFL 100N50P

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

gfs VDS = 20 V; ID = IT, Note 1 50 80 S

Ciss 20 nF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 pF

Crss 140 pF

td(on) 36 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = IT29 ns

td(off) RG= 1 Ω (External) 110 ns

tf26 ns

Qg(on) 240 nC

Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT96 nC

Qgd 78 nC

RthJC 0.20 °C/W

RthCS 0.13 °C/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0 V 100 A

ISM Repetitive 250 A

VSD IF = IS, VGS = 0 V, Note 1 1.5 V

trr IF = 25A, -di/dt = 100 A/µs 200 ns

QRM VR = 100V 0.6 µC

IRM 6.0 A

Notes:

1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

ISOPLUS264 (IXFL) Outline

Note: Bottom heatsink meets

2500Vrms Isolation to the other pins.

Ref: IXYS CO 0128 R0

Test Current IT = 50 A

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IXFL 100N50P

Fig. 1. Output Characteristics

@ 25ºC

0

10

20

30

40

50

60

70

80

90

100

00.511.522.533.544.555.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

5V

7V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

180

200

220

0 2 4 6 8 10 12 14 16 18 20 22 24 26

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7V

6V

8V

Fig. 3. Output Characteristics

@ 125ºC

0

10

20

30

40

50

60

70

80

90

100

01234567891011

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

Fig. 4. RDS(on) Normalized to ID = 50A Value

vs. Junction Temperature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 100A

I

D

= 50A

Fig. 5. RDS(on) Normalized to ID = 50A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0 20 40 60 80 100 120 140 160 180 200 220

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

10

20

30

40

50

60

70

80

-50 -25 0 25 50 75 100 125 150

TJ - Degrees Centigrade

ID - Amperes

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXFL 100N50P

Fig. 7. Input Admittance

0

20

40

60

80

100

120

140

160

4 4.5 5 5.5 6 6.5 7 7.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

15

30

45

60

75

90

105

120

135

150

0 20 40 60 80 100 120 140 160 180

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

50

100

150

200

250

300

0.4 0.6 0.8 1 1.2 1.4 1.6

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200 225 250

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 250V

I

D

= 50A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

1

10

100

1,000

10 100 1000

VDS - Volts

ID - Amperes

TJ = 150ºC

TC = 25ºC

25µs

1ms

100µs

RDS(on) Limit

10ms

DC

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IXFL 100N50P

Fig. 13. Maximum Transient Thermal Resistance

0.001

0.010

0.100

1.000

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

R

(th)JC

- ºC / W

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