IRGP4050PbF
PDP Switch
E
C
G
n-channel
VCES = 250V
VCE(on) typ. = 1.64V
@VGE = 15V, IC = 30A
1www.irf.com
8/23/04
PD-95743
Features
Description
§ Key parameters optimized for PDP sustain &
Energy recovery applications
§ 104A continuous collector current
rating reduces component count
§ High pulse current rating makes it ideal for
capacitive load circuits
§ Low temperature co-efficient of V CE (ON) ensures
reduced power dissipation at operating junction
temperatures
§ Reverse voltage avalanche rating improves the
robustness in sustain driver application
§ Short fall & rise times for fast switching
§ Lead-Free
This IGBT is specifically designed for sustain & energy recovery application
in plasma display panels. This IGBT features low VCE (ON) and fast switching
times to improve circuit efficiency and reliability. Low temperature co-efficient
of VCE (ON) makes this IGBT an ideal device for PDP sustain driver application. TO-247AC
*Package limited to 60A.
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage 250 V
I
C
@ T
C
= 25°C Co nti n uo us C ol l e c t o r Cu rr en t 104* A
I
C
@ T
C
= 100°C Co nti n uo us C ol l e c t o r Cu rr en t 56
I
CM
Pul se Colle cto r Current
c
208
I
LM
Cla m ped Inductive Load current
d
290
V
GE
Gate -to- Emi tt er Volt age ±20 V
E
ARV
Reverse Vo lt age Ava lanche Energy
e
1240 mJ
P
D
@ T
C
= 25°C Maximum Power D issi pation 330 W
P
D
@ T
C
= 100°C Maximum Power D issi pation 130
T
J
Operating Junction and -55 to +150
T
STG
S tor ag e Te m per ature Ra ng e ° C
Solder Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
Typ.
Max.
Units
RθJC Junc ti o n- to- Cas e- IG BT ––– ––– 0. 38 °C/W
RθCS Ca s e- to- Sink , flat, greas ed s ur fac e ––– 0.2 4 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz.)
IRGP4050PbF
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Notes:
Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a).
Repetitive rating; pulse width limited by maximum junction temperature.
Pulse width ≤ 2.5ms; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
250 — — V
V
GE
= 0V , I
C
= 250µA
V
(BR)ECS Emitter-to-Collector Breakdown Voltage
f
18 — — V
V
GE
= 0V , I
C
= 1. 0A
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage —8.2—mV/°C
V
GE
= 0V , I
C
= 1mA
—1.641.90
I
C
= 30A
V
CE(on) Colle c tor-to -Em i tt er Satu rat ion Vo lt age — 2.0 4 — V
I
C
= 56A
VGE = 15 V
—2.60—
I
C
= 104A, T
J
= 150°C See Fig. 2, 5
V
GE(th) Gate Thresh old V o ltage 3.0 — 6.0
V
CE
= V
GE
, I
C
= 250µA
∆
V
GE(th)
/
∆
T
JThr es hold Voltage tem p. co eff i cient — -11 — mV/°C
V
CE
= V
GE
, I
C
= 0.25mA
gfe For ward Transconductance
g
34 51 — S
V
CE
= 100V, I
C
= 56A
I
CES Zero Gate Voltage Colle cto r Current — — 250
V
GE
= 0V , V
CE
= 250V
——2.0µA
V
GE
= 0V , V
CE
= 10V
— — 5000
V
GE
= 0V , V
CE
= 250V, T
J
= 150°C
I
GES G at e- to- Em itt e r Lea kag e C ur rent — — ±100 nA
V
GE
= ±20V
Switching Characteri stics @ T
J
= 25°C (unless othe rwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
gTotal Gate Charge (turn-on) — 230 350
I
C
= 56A
Q
ge Gate-to-Emitter Charge (turn-on) — 37 56 nC
V
CC
= 200V
Se e Fi g. 8
Q
gc Gate- to-C ollec tor C ha r ge (turn- on ) — 78 120
V
GE
= 15V
t
d(on) Tu rn-On delay time — 37 —
T
J
= 25°C
t
rRise time — 35 — ns
I
C
= 30A, V
CC
= 180V
t
d(off) Tu rn- O ff dela y ti m e — 1 20 180
V
GE
= 15V , R
G
= 5.0
Ω
t
fFall time — 59 89 Energy losses include "tail"
E
on Tur n-On Switching Loss — 45 — See Fig. 9, 10, 14
E
off Tur n- Off Sw itc hing Lo s s — 125 — µJ
E
TS Tot a l S wit c h ing Los s — 170 —
t
d(on) Tu rn-On delay time — 35 —
T
J
= 150°C
t
rRise time — 35 — ns
I
C
= 30A, V
CC
= 180V
t
d(off) Turn-Off delay time — 130 —
V
GE
= 15V , R
G
= 5.0
Ω
t
fFall time — 120 — Energy losses include "tail"
E
TS Tot a l Swit c hin g Los s — 280 — µJ See F ig . 11 , 14
L
EIn ter na l E m itter Indu ctanc e — 13 — nH Measu r ed 5m m fr om pa ck age
C
ies Inpu t Capac it a nce — 46 50 —
V
GE
= 0V
C
oes Output Capacitance — 480 — pF
V
CC
= 30V,
Se e Fi g. 7
C
res Reverse Transfer Capacitance — 92 — f = 1.0MHz
IRGP4050PbF
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
0.1 110 100
VCE, Collecto- to-E m itter V oltage (V)
0.1
1
10
100
1000
IC, Collector-to-Emitter Current (A)
VGE
= 15V
20µs PULSE WIDTH
TJ = 25°C
TJ = 150°C
0246810121416
VGE, Gate- to-E m itter Voltage (V)
0.01
0.1
1
10
100
1000
IC, Collector-to-Emitter Current (A)
TJ = 150°C
TJ = 25°C
VCC = 50V
20µs PU LSE WID TH
0.1 110 100
f , Frequency ( kHz )
0
20
40
60
80
100
120
140
Load Current ( A )
For both:
Dut y cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Pow er Di ssipation = 73W
Triangular wave:
Clam p voltage:
80% of rated
60% of rated
voltag e
Ideal diodes
Square wave:
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperatur e (°C )
1.0
2.0
3.0
4.0
VCE , Collector-to Emitter Voltage (V)
IC = 112A
VGE = 15V
80µs PULSE WIDTH
IC = 56A
IC = 28A
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , R ectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0906 0.000350
0.0906 0.002209
0.2003 0.028536
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
25 50 75 100 125 150
TC , Case Temper ature ( °C)
0
20
40
60
80
100
120
Maximum DC Collector Current (A)
LIMITED BY PACKAGE
IRGP4050PbF
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Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
050 100 150 200
VCE, Collector-toEmitter-Voltage(V)
10
100
1000
10000
100000
Capacitance (pF)
Cies
Coes
Cres
VGS = 0V, f = 1 MHZ
Cies = Cge + Cgd, Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
0 50 100 150 200
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 200V
IC = 56A
0 5 10 15 20 25 30
RG, Gate Resistance (Ω)
800
1000
1200
1400
1600
1800
2000
2200
2400
Total Swiching Losses (µJ)
VCE = 200V
VGE = 15V
TJ = 25°C
IC = 56A
-55 -5 45 95 145
TJ, Juntion Temperature ( °C)
0
1000
2000
3000
4000
5000
6000
7000
Total Swiching Losses (µJ)
RG = 5.0Ω
VGE = 15V IC = 112A
IC = 56A
IC = 28A
IRGP4050PbF
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Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
20 40 60 80 100 120
IC, Collecto-to-Emitter (A)
0
1000
2000
3000
4000
5000
6000
Total Swiching Losses (µJ)
RG = 5.0Ω
TJ = 150°C
VCE= 200V
VGE = 15V
110 100 1000
VDS, Drai n-to- Source Voltage (V )
1
10
100
1000
IC, Collector-to-Emitter Current (A)
VGE = 20V
TJ = 125°
SAFE OPERATING AREA
IRGP4050PbF
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480V
4 X IC@25°C
D.U.T.
50V
LV *
C
cd
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* N ote: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
480µF
960V
0 - 480V
RL =
t=5µ
s
d(on)
tt
f
t
r
90%
t
d(off)
10%
90%
10%
5%
V
C
I
C
E
on
E
off
ts on off
E = (E +E )
c
d
e
Fig. 14b - Switching Loss
Waveforms
5
0V
Driver*
1000V
D.U.T
.
I
C
C
V
c
de
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
IRGP4050PbF
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Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
TO-247AC Part Marking Information
EXAMPLE:
ASSEMBLED ON WW 35, 200 0
LOT CODE 5657
WIT H A S SE MBLY
THIS IS AN IRFPE3 0
I N TH E ASSEMBLY LINE "H" 035H
LOGO
INTERNATIONAL
RECTIFIER IRFPE30
LOT CODE
AS S E MB L Y
56 57
PART NUMBER
DA TE CODE
YEAR 0 = 200
0
WEE K 35
LINE H
Note: "P" in assembly line
position indicates "Lead-Free"
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
