UM2100
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Pa
TM ®
www.MICROSEMI.com
g
e 1
Copyright 2007
Rev: 2009-01-19
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
KEY FEATURES
HF band (2-30 MHz) PIN
Long Lifetime (25μs typical)
High Power ( 1kW, CW)
High Isolation (32dB)
Low Loss (0.25dB)
Very Low Distortion
(IP3=60dBm)
Voltage ratings to 1000 V
RoHS compliant packaging
Available1
(use UMX2101B, etc.)
1 The UM2100 series of products can be
supplied with a RoHS compliant finish
(UMX2100) or with a 90/10 Sn/Pb finish.
Consult factory for details.
DESCRIPTION
UM2100 Series PIN diodes are designed for transmit/receive switch
and attenuator applications in HF band (2-30MHz) and below. As
series configured switches, these long lifetime (25μs typical) diodes
can control up to 2.5 kW, CW in a 50 ohm system. In HF band,
insertion loss is less than 0.25dB and isolation is greater than 32dB
(off-state).
The UM2100 series offers the lowest distortion performance in both
transmit and receive modes. Less than 50 mA forward bias is requires
to obtain an IP3 of 60 dBm at 300 kHz with 1 watt per tone. The
forward biased resistance/reactance vs. frequency characteristics are
flat down to 10 kHz. The capacitance vs. reverse bias voltage
characteristic is flat down to 2 MHz. In attenuator configuration, the
UM2100 produces extremely low distortion at low values of attenuator
control current, and very low insertion loss (0.2dB) in the “0dB”
attenuator state.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package Conditions
(PD ) Power
Dissapation
(W)
( Θ )Thermal
Resistance
( OC/W)
A 25
O
C Pin Temperature 25 50V
B 12 12.5
E
½ in. total length to 25 OC
Contact Free Air 2.5
C 25 OC Stud Temperature 25 6
D 25 OC Stud Temperature 18.75 8
SM 25 OC End Cap Temperature 15 10
ALL 1 us pulse (Single) 100KW
ALL Storage Temperature (TOP) -65 OC to + 175 OC
ALL Operating Temperature (TOP) -65 OC to + 175 OC
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
Soldering temperature:
260 oC for 10 seconds
maximum
U
UM
M2
21
10
00
0
UM2100
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Pa
TM ®
MICROSEMI.com
g
e 2
www.
Copyright 2007
Rev: 2009-01-19
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
VOLTAGE RATINGS .
@ 25C (unless otherwise specified)
Part Number Reverse Voltage @ 10uA (V)
UM2101 100
UM2102 200
UM2104 400
UM2106
600
UM2108
800
UM2110
1000
ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Parameter Symbol Conditions MIN. TYPICAL MAX. Units
Total Capacitance CT V
R=100V, F= 1 MHz 1.9 2.5 pF
Series Resistance RS If = 100 mA, F= 2 MHz 1.0 2.0 Ohms
Carrier Lifetime TL I
F = 10 mA/100 V 20 25 μs
Reverse Current IR V
R = Voltage rating 10 μA
Intermodulation Distortion Test Circuit
SIGNAL
GENERATO
R
SPECTR
A
NALYZE
R
DC current
supply
R
FC
R
FC
f1
f2
*
*
GENERAT OR
SIGNAL *
*
POWER
SPLITTE
R
Intermodulation Distortion IP3 P=2W total, IF=25mA
F1 = 1.999 MHz
F2 = 2.001 MHz
1.0 W/tone
50 60 dBm
E
EL
LE
EC
CT
TR
RI
IC
CA
AL
LS
S
* May be controlled with the IEEE-488 bus circuit.
UM2100
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Pa
TM ®
www.MICROSEMI.com
g
e 3
Copyright 2007
Rev: 2009-01-19
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
TYPICAL RS VS IF
TYPICAL RS / REACTANCE VS FREQ
-1
10 0
10 1
10 2
10
If (mA)
-1
10
0
10
1
10
2
10
Rs (Ohms)
Rs versus If
TYPICAL
f = 2 MHz
2
10 3
10 4
10 5
10 6
10 7
10
FREQUENCY (Hz)
-0.5
0.0
0.5
1.0
1.5
2.0
RESISTANCE / REACTANCE (Ohms)
RESISTANCE / REACTANCE VERSUS FREQUENCY
TYPICAL
RESISTANCE
REACTANCE
If = 100 mA
POWER/TONE VS IF
CAPACITANCE VS VOLTAGE
0
10 1
10 2
10
If NEEDED TO OBTAIN AN IM3 OF -60 dBc [mA]
15
20
25
30
35
40
POWER LEVEL/TONE [dBm]
45
50
55
60
65
70
IP3 [dBm]
POWER LEVEL/TONE VERSUS FORWARD BIAS CURRENT
TYPICAL
2 MHz 1 MHz 500 KHz250 KHz 150 KHz
F1 = F - 1 KHz
F2 = F + 1 KHz
-1
10 0
10 1
10 2
10
Vr (V)
0
2
4
6
8
10
12
14
16
18
20
CAPACITANCE (pF)
CAPACITANCE VERSUS VOLTAGE
TYPICAL
10 KHz
100 KHz
200 KHz
400 KHz
1 MHz
2 MHz
4 MHz
10 MHz
GRAPHS
UM2100
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Pa
TM ®
www.MICROSEMI.com
g
e 4
Copyright 2007
Rev: 2009-01-19
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
I/V VS TEMP
0.0 0.5 1.0 1.5
Vf (V)
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
If (A)
MEAN If VERSUS Vf CURVE VERSUS TEMPERATURE
TYPICAL
-----25C
--------------75C
---------------100C
---------------125C
150C------------
G
GR
RA
AP
PH
HS
S
UM2100
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Pa
TM ®
www.MICROSEMI.com
g
e 5
Copyright 2007
Rev: 2009-01-19
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
PACKAGE STYLE ‘A’
PACKAGE STYLE ‘B’
PACKAGE STYLE ‘C’
PACKAGE STYLE ‘CR’
PACKAGE STYLE ‘D’
PACKAGE STYLE ‘DR’
MECHANICAL
UM2100
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Pa
TM ®
www.MICROSEMI.com
g
e 6
Copyright 2007
Rev: 2009-01-19
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
PACKAGE STYLE ‘E’
PACKAGE STYLE ‘SM’
STYLE ‘SM’ FOOTPRINT
NOTES:
1 These dimensions will match the terminals and provide for additional solder fillets at the
outboard ends at least as wide as the terminals themselves, assuming accuracy of
placement within 0.005”
2 If the mounting method chosen requires use of an adhesive separate from the solder
compound, a round (or square) spot of cement as shown should be centrally located.
M
ME
EC
CH
HA
AN
NI
IC
CA
AL
L
