Standard Products QCOTSTM UT9Q512K32E 16Megabit SRAM MCM Preliminary Data Sheet April 11, 2007 INTRODUCTION The QCOTSTM UT9Q512K32E Quantified Commercial Offthe-Shelf product is a high-performance 2M byte (16Mbit) CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a common output enable. Memory expansion is provided by an active LOW chip enable (En), an active LOW output enable (G), and three-state drivers. This device has a power-down feature that reduces power consumption by more than 90% when deselected. FEATURES 25ns maximum (5 volt supply) address access time Asynchronous operation for compatible with industry standard 512K x 8 SRAMs TTL compatible inputs and output levels, three-state bidirectional data bus Typical radiation performance - Total dose: 50krads - SEL Immune >110 MeV-cm2/mg - LETTH(0.25) = >52 MeV-cm2/mg - Saturated Cross Section (cm2) per bit, 2.8E-8 - <1.1E-9 errors/bit-day, Adams 90% geosynchronous heavy ion Writing to each memory is accomplished by taking chip enable (En) input LOW and write enable (Wn) inputs LOW. Data on the eight I/O pins (DQ0 through DQ7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking chip enable (En) and output enable (G) LOW while forcing write enable (Wn) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. Packaging: - 68-lead dual cavity ceramic quad flatpack (CQFP) (10.274 grams) Standard Microcircuit Drawing 5962-01511 - QML V and Q compliant part E3 W3 The input/output pins are placed in a high impedance state when the device is deselected (En HIGH), the outputs are disabled (G HIGH), or during a write operation (En LOW and Wn LOW). Perform 8, 16, 24 or 32 bit accesses by making Wn along with En a common input to any combination of the discrete memory die. E2 W2 E1 W1 W0 E0 A(18:0) G 512K x 8 512K x 8 DQ(31:24) or DQ3(7:0) DQ(23:16) or DQ2(7:0) 512K x 8 DQ(15:8) or DQ1(7:0) Figure 1. UT9Q512K32E SRAM Block Diagram 1 512K x 8 DQ(7:0) or DQ0(7:0) DEVICE OPERATION NC A0 A1 A2 A3 A4 A5 E2 VSS E3 W0 A6 A7 A8 A9 A10 VDD The UT9Q512K32E has three control inputs called Enable 1 (En), Write Enable (Wn), and Output Enable (G); 19 address inputs, A(18:0); and eight bidirectional data lines, DQ(7:0). En Device Enable controls device selection, active, and standby modes. Asserting En enables the device, causes IDD to rise to its active value, and decodes the 19 address inputs to select one of 524,288 words in the memory. Wn controls read and write operations. During a read cycle, G must be asserted to enable the outputs. 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 1 2 3 4 5 Top View 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 DQ0(2) DQ1(2) DQ2(2) DQ3(2) DQ4(2) DQ5(2) DQ6(2) DQ7(2) VSS DQ0(3) DQ1(3) DQ2(3) DQ3(3) DQ4(3) DQ5(3) DQ6(3) DQ7(3) Table 1. Device Operation Truth Table VDD A11 A12 A13 A14 A15 A16 E0 G E1 A17 W1 W2 W3 A18 NC NC DQ0(0) DQ1(0) DQ2(0) DQ3(0) DQ4(0) DQ5(0) DQ6(0) DQ7(0) VSS DQ0(1) DQ1(1) DQ2(1) DQ3(1) DQ4(1) DQ5(1) DQ6(1) DQ7(1) G Wn En I/O Mode Mode X1 X 1 3-state Standby X 0 0 Data in Write 1 1 0 3-state Read2 0 1 0 Data out Read Figure 2. 25ns SRAM Pinout (68) Notes: 1. "X" is defined as a "don't care" condition. 2. Device active; outputs disabled. PIN NAMES READ CYCLE A(18:0) DQn(7:0) En Address Data Input/Output Enable Wn Write Enable G Output Enable VDD Power VSS Ground A combination of Wn greater than VIH (min) and En less than VIL (max) defines a read cycle. Read access time is measured from the latter of Device Enable, Output Enable, or valid address to valid data output. SRAM Read Cycle 1, the Address Access in figure 3a, is initiated by a change in address inputs while the chip is enabled with G asserted and Wn deasserted. Valid data appears on data outputs DQ(7:0) after the specified tAVQV is satisfied. Outputs remain active throughout the entire cycle. As long as Device Enable and Output Enable are active, the address inputs may change at a rate equal to the minimum read cycle time (tAVAV). SRAM read Cycle 2, the Chip Enable - Controlled Access in figure 3b, is initiated by En going active while G remains asserted, Wn remains deasserted, and the addresses remain stable for the entire cycle. After the specified tETQV is satisfied, the eight-bit word addressed by A(18:0) is accessed and appears at the data outputs DQ(7:0). SRAM read Cycle 3, the Output Enable - Controlled Access in figure 3c, is initiated by G going active while En is asserted, Wn is deasserted, and the addresses are stable. Read access time is tGLQV unless tAVQV or tETQV have not been satisfied. 2 WRITE CYCLE TYPICAL RADIATION HARDNESS A combination of Wn less than VIL(max) and En less than VIL(max) defines a write cycle. The state of G is a "don't care" for a write cycle. The outputs are placed in the high-impedance state when either G is greater than VIH(min), or when Wn is less than VIL(max). The UT9Q512K32E SRAM incorporates features which allows operation in a limited radiation environment. Table 2. Radiation Hardness Design Specifications1 Write Cycle 1, the Write Enable-controlled Access is defined by a write terminated by Wn going high, with En still active. The write pulse width is defined by tWLWH when the write is initiated by Wn, and by tETWH when the write is initiated by En. Unless the outputs have been previously placed in the high-impedance state by G, the user must wait tWLQZ before applying data to the nine bidirectional pins DQ(7:0) to avoid bus contention. Total Dose 50 krad(Si) Heavy Ion Error Rate2 <1.1E-9 Errors/Bit-Day Notes: 1. The SRAM will not latchup during radiation exposure under recommended operating conditions. 2. 90% worst case particle environment, Geosynchronous orbit, 100 mils of Aluminum. Write Cycle 2, the Chip Enable-controlled Access is defined by a write terminated by the latter of En going inactive. The write pulse width is defined by tWLEF when the write is initiated by Wn, and by tETEF when the write is initiated by the En going active. For the Wn initiated write, unless the outputs have been previously placed in the high-impedance state by G, the user must wait tWLQZ before applying data to the eight bidirectional pins DQ(7:0) to avoid bus contention. 3 ABSOLUTE MAXIMUM RATINGS1 (Referenced to VSS) SYMBOL PARAMETER LIMITS VDD DC supply voltage -0.5 to 7.0V VI/O Voltage on any pin -0.5 to 7.0V TSTG Storage temperature -65 to +150C PD Maximum power dissipation TJ Maximum junction temperature2 +150C Thermal resistance, junction-to-case3 10C/W DC input current 10 mA JC II 1.0W (per byte) Notes: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability and performance. 2. Maximum junction temperature may be increased to +175C during burn-in and steady-static life. 3. Test per MIL-STD-883, Method 1012. RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER LIMITS VDD Positive supply voltage 4.5 to 5.5V TC Case temperature range (W) Screen - 40C to 105C VIN DC input voltage 0V to VDD 4 DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)* -40C to +105C (VDD = 5.0V + 10% for (W) screening) SYMBOL PARAMETER CONDITION MIN MAX 2.0 UNIT VIH High-level input voltage (TTL) V VIL Low-level input voltage (TTL) 0.8 V VOL1 Low-level output voltage IOL = 8mA, VDD =4.5V (TTL) 0.4 V VOL2 Low-level output voltage IOL = 200A,VDD =4.5V (CMOS) 0.08 V VOH1 High-level output voltage IOH = -4mA,VDD =4.5V (TTL) 2.4 V VOH2 High-level output voltage IOH = 200A,VDD =4.5V (CMOS) 3.0 V CIN1 Input capacitance = 1MHz @ 0V 32 pF CIO1 Bidirectional I/O capacitance = 1MHz @ 0V 16 pF IIN Input leakage current VIN = VDD and VSS, VDD = VDD (max) -2 2 A IOZ Three-state output leakage current VO = VDD and VSS -2 2 A -90 90 mA VDD = VDD (max) G = VDD (max) IOS2, 3 Short-circuit output current VDD = VDD (max), VO = VDD VDD = VDD (max), VO = 0V IDD(OP) Supply current operating @ 1MHz (per byte) Inputs: VIL = 0.8V, VIH = 2.0V IOUT = 0mA VDD = VDD (max) 50 mA IDD1(OP) Supply current operating @40MHz (per byte) Inputs: VIL = 0.8V, 76 mA Supply current standby @0MHz (per byte) Inputs: VIL = VSS IOUT = 0mA E1 = VDD - 0.5, VDD = VDD (max) VIH = VDD - 0.5V -40C and 25C 10 mA 105C 45 mA IDD2(SB) VIH = 2.0V IOUT = 0mA VDD = VDD (max) Notes: * Post-radiation performance guaranteed at 25C per MIL-STD-883 Method 1019. 1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance. 2. Supplied as a design limit but not guaranteed or tested. 3. Not more than one output may be shorted at a time for maximum duration of one second. 5 AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)* -40C to +105C (VDD = 5.0V + 10% for (W) screening) SYMBOL PARAMETER MAX MIN UNIT tAVAV1 Read cycle time tAVQV Read access time tAXQX2 Output hold time 3 ns tGLQX2 G-controlled Output Enable time 0 ns tGLQV G-controlled Output Enable time (Read Cycle 3) 10 ns tGHQZ2 G-controlled output three-state time 10 ns tETQX2,3 En-controlled Output Enable time tETQV3 tEFQZ1,2,4 25 ns 25 3 ns ns En-controlled access time 25 ns En-controlled output three-state time 10 ns Notes: * Post-radiation performance guaranteed at 25C per MIL-STD-883 Method 1019. 1. Functional test. 2. Three-state is defined as a 500mV change from steady-state output voltage. 3. The ET (enable true) notation refers to the falling edge of En. SEU immunity does not affect the read parameters. 4. The EF (enable false) notation refers to the rising edge of En. SEU immunity does not affect the read parameters. High Z to Active Levels Active to High Z Levels VH - 500mV VLOAD + 500mV } VLOAD { { } VLOAD - 500mV VL + 500mV Figure 3. 5-Volt SRAM Loading 6 tAVAV A(18:0) DQn(7:0) Previous Valid Data Valid Data tAVQV tAXQX Assumptions: 1. En and G < VIL (max) and Wn > VIH (min) Figure 4a. SRAM Read Cycle 1: Address Access A(18:0) En tETQV tETQX tEFQZ DQn(7:0) DATA VALID Assumptions: 1. G < VIL (max) and Wn > VIH (min) Figure 4b. SRAM Read Cycle 2: Chip Enable-Controlled Access tAVQV A(18:0) tGHQZ tGLQX DATA VALID Qn(7:0) tGLQV ssumptions: En < VIL (max) and Wn > VIH (min) Figure 4c. SRAM Read Cycle 3: Output Enable-Controlled Access 7 AC CHARACTERISTICS WRITE CYCLE (Pre/Post-Radiation)* -40C to +105C (VDD = 5.0V + 10% for (W) screening) SYMBOL PARAMETER MIN MAX UNIT tAVAV1 Write cycle time 25 ns tETWH Device Enable to end of write 20 ns tAVET Address setup time for write (En - controlled) 1 ns tAVWL Address setup time for write (Wn - controlled) 0 ns tWLWH Write pulse width 20 ns tWHAX Address hold time for write (Wn - controlled) 2 ns tEFAX Address hold time for Device Enable (En - controlled) 0 ns tWLQZ2 Wn - controlled three-state time 10 tWHQX2 Wn - controlled Output Enable time 4 ns tETEF Device Enable pulse width (En - controlled) 20 ns tDVWH Data setup time 15 ns tWHDX Data hold time 2 ns tWLEF Device Enable controlled write pulse width 20 ns tDVEF Data setup time 15 ns tEFDX Data hold time 0 ns tAVWH Address valid to end of write 20 ns tWHWL1 Write disable time 5 ns Notes: * Post-radiation performance guaranteed at 25C per MIL-STD-883 Method 1019. 1. Functional test performed with outputs disabled (G high). 2. Three-state is defined as 500mV change from steady-state output voltage. 8 ns A(18:0) tAVAV2 En tAVWH tETWH tWHWL Wn tWLWH tAVWL tWHAX Qn(7:0) tWLQZ Dn(7:0) tWHQX APPLIED DATA Assumptions: 1. G < VIL (max). If G > VIH (min) then Qn(7:0) will be in three-state for the entire cycle. 2. G high for tAVAV cycle. tDVWH tWHDX Figure 5a. SRAM Write Cycle 1: Write Enable - Controlled Access 9 tAVAV3 A(18:0) tETEF tAVET tEFAX En or tAVET En tETEF tEFAX tWLEF Wn Dn(7:0) APPLIED DATA tWLQZ tDVEF Qn(7:0) tEFDX Assumptions & Notes: 1. G < VIL (max). If G > VIH (min) then Qn(7:0) will be in three-state for the entire cycle. 2. Either En scenario above can occur. 3. G high for tAVAV cycle. Figure 5b. SRAM Write Cycle 2: Chip Enable - Controlled Access CMOS 90% VDD-0.05V 300 ohms 10% 0.5V VLOAD = 1.55V 10% < 5ns 50pF < 5ns Input Pulses Notes: 1. 50pF including scope probe and test socket capacitance. 2. Measurement of data output occurs at the low to high or high to low transition mid-point (i.e., CMOS input = VDD/2). Figure 6. AC Test Loads and Input Waveforms 10 DATA RETENTION MODE VDR > 2.5V VDD 4.5V 4.5V tR tEFR E1 VDD = VDR Figure 7. Low VDD Data Retention Waveform DATA RETENTION CHARACTERISTICS (Pre-Radiation) *(VDD2 = VDD2 (min), 1 Sec DR Pulse) SYMBOL VDR IDDR 1 tEFR1,2 tR1,2 PARAMETER TEMP MINIMUM MAXIMUM UNIT -- 2.5 -- V -40oC -- 40 mA 25oC -- 40 mA 105oC -- 160 mA Chip deselect to data retention time -- 0 -- ns Operation recovery time -- tAVAV -- ns VDD1 for data retention Data retention current Notes: *Post-radiation performance guaranteed at 25oC per MIL-STD-883 Method 1019. 1. E = VDD all other inputs = VDD or VSS 2. VDD = 0 volts to VDD (max) 11 PACKAGING Notes: 1. All exposed metallized areas are gold plated over nickel per MIL-PRF-38535. 2. The lid is electrically connected to VSS. 3. Packages may be shipped with repaired leads as shown. 4. Coplanarity requirements do not apply in repaired area. 5. Letter designations are to cross reference to MIL-STD-1835. 6. Lead true position tolerances are coplanarity are not measured. 7. Capacitor pads are sized to fit CDR32 (1206) capacitors. Figure 8. 68-Lead Ceramic Quad Flatpack 12 ORDERING INFORMATION 512K32 16Megabit SRAM MCM: UT9Q512K32E -* * * * Lead Finish: (C) = Gold Screening: (P) = Prototype flow (W) = -40oC to +105oC Package Type: (S) = 68-lead dual cavity CQFP Device Type: - =25ns access time, 5.0V operation Aeroflex UTMC Core Part Number Notes: 1. Prototype flow per UTMC Manufacturing Flows Document. Devices are tested at 25oC. Gold lead finish only. 2. Extended Industrial Temperature Range flow per UTMC Manufacturing Flows Document. Devices are tested at -40C to +105C. Radiation neither tested nor guaranteed. Gold Lead Finish Only. 13 512K32 16Megabit SRAM MCM: SMD 5962 - 01511 ** * * * Lead Finish: (C) = Gold Case Outline: (X) = 68-lead dual cavity CQFP Class Designator: (V) = QML Class V (Q) = QML Class Q Device Type 03 = 25 ns access time, 5.0V operation, (-40oC to +105oC) Drawing Number: 01511 Total Dose (-) = none (D) = 1E4 (10krad(Si)) (P) = 3E4 (30krad(Si)) (contact factory) (L) = 5E4 (50krad(Si)) (contact factory) Federal Stock Class Designator: No Options Notes: 1. Total dose radiation must be specified when ordering. Gold finish only. 14 Aeroflex Colorado Springs - Datasheet Definition Advanced Datasheet - Product In Development Preliminary Datasheet - Shipping Prototype Datasheet - Shipping QML & Reduced Hi-Rel COLORADO Toll Free: 800-645-8862 Fax: 719-594-8468 INTERNATIONAL Tel: 805-778-9229 Fax: 805-778-1980 NORTHEAST Tel: 603-888-3975 Fax: 603-888-4585 SE AND MID-ATLANTIC Tel: 321-951-4164 Fax: 321-951-4254 WEST COAST Tel: 949-362-2260 Fax: 949-362-2266 CENTRAL Tel: 719-594-8017 Fax: 719-594-8468 www.aeroflex.com info-ams@aeroflex.com Aeroflex Colorado Springs, Inc., reserves the right to make changes to any products and services herein at any time without notice. Consult Aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. 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