AP05N20GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Lower Gate Charge Fast Switching Characteristics D RoHS Compliant & Halogen-Free BVDSS RDS(ON) ID 200V 560m 5.8A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, V GS @ 10V 5.8 A ID@TC=100 Continuous Drain Current, V GS @ 10V 3.7 A 20 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 28 W PD@TA=25 Total Power Dissipation 1.92 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 4.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 /W Data & specifications subject to change without notice 1 201012291 AP05N20GI-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A Min. Typ. Max. Units 200 - - 560 V m BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=2A - - 600 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=5A - 7 - S gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=160V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=5A - 30 48 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=160V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 11.5 - nC 2 td(on) Turn-on Delay Time VDD=100V - 6 - ns tr Rise Time ID=5A - 8.5 - ns td(off) Turn-off Delay Time RG=3.3 - 30 - ns tf Fall Time VGS=10V - 5 - ns Ciss Input Capacitance VGS=0V - 530 850 pF Coss Output Capacitance VDS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 35 - pF Min. Typ. IS=5A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=5A, VGS=0V, - 190 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 1.6 - uC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP05N20GI-HF 16 12 ID , Drain Current (A) 12 8 10V 8.0V 7.0V 6.0V V G =5.0V o T C =150 C 10 ID , Drain Current (A) 10V 8.0V 7.0V 6.0V V G =5.0V T C = 25 o C 8 6 4 4 2 0 0 0 8 16 24 0 32 16 24 32 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.4 I D =5A V GS =10V I D =1mA Normalized RDS(ON) 2.4 Normalized BVDSS (V) 8 V DS , Drain-to-Source Voltage (V) 1.2 1 2 1.6 1.2 0.8 0.8 0.4 0.6 0 -50 0 50 100 150 -50 o 0 50 100 150 o T j , Junction Temperature ( C) T j , Junction Temperature ( C ) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 5 2 4 1.6 Normalized VGS(th) (V) IS(A) I D =1mA 3 T j =150 o C 2 T j =25 o C 1.2 0.8 0.4 1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP05N20GI-HF f=1.0MHz 800 I D =5A V DS =100V V DS =120V V DS =160V 10 600 8 C iss C (pF) VGS , Gate to Source Voltage (V) 12 6 400 4 200 2 C oss C rss 0 0 0 10 20 30 1 40 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) 100us ID (A) 10 Normalized Thermal Response (Rthjc) 100 1ms 1 10ms 100ms 1s DC T c =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 0 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4