FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25mx750m Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750 also features Si3N4 passivation and is available in the low-cost plastic SOT89, SOT343, and DFN packages. Optimum Technology Matching(R) Applied 50% Power-Added Efficiency GaAs HBT Applications GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS 9 27.5dBm Linear Output Power at 12GHz 11.5dB Power Gain at 12GHz 14.5dB Max Stable Gain at 12GHz 38dBm OIP3 SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT Narrowband and Broadband High-Performance Amplifiers SATCOM Uplink Transmitters PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers Medium-Haul Digital Radio Transmitters InP HBT RF MEMS LDMOS Parameter Min. Specification Typ. Max. Unit Condition Electrical Specifications P1dB Gain Compression 26.5 27.5 dBm VDS =8V, IDS =50% IDSS Maximum Stable Gain (S21/S12) Power Gain at P1dB (G1dB) 13.5 10.5 14.5 11.5 dB dB VDS =8V, IDS =50% IDSS VDS =8V, IDS =50% IDSS Power-Added Efficiency (PAE) 45 % OIP3 38 40 dBm dBm VDS =8V, IDS =50% IDSS Matched for optimal power, tuned for best IP3 mA mA VDS =1.3V, VGS =0V VDS =1.3V, VGS +1V 200 ms VDS =1.3V, VGS =0 V 10 |1.0| A V VGS=-5V VDS =1.3V, IDS =0.36mA |12.0| |14.0| V IGS =0.75mA |14.5| |16.0| V IGD =0.75mA 65 C/W Saturated Drain-Source Current (IDSS) Maximum Drain-Source Current (IMAX) 185 Transconductance (GM) Gate-Source Leakage Current (IGSO) Pinch-Off Voltage (VP) Gate-Source Breakdown Voltage (VBDGS) Gate-Drain Breakdown Voltage (VBDGD) Thermal Resistivity (JC) 230 370 280 VDS =8V, IDS =50% IDSS, POUT =P1dB VDS >6V Note: TAMBIENT =22C, RF specifications measured at f=12GHz using CW signal. RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. Rev A1 DS090609 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 4 FPD750 Absolute Maximum Ratings1 Parameter Rating Caution! ESD sensitive device. Unit Drain-Source Voltage (VDS) (-3V<VGS <-0.5V)2 10 V Gate-Source Voltage (VGS) (0V<VDS <+8V) -3 V Drain-Source Current (IDS) (For VDS <2V) IDSS Gate Current (IG) (Forward or reverse current) 7.5 mA RF Input Power (PIN) (Under any acceptable bias state) 22 dBm Channel Operating Temperature (TCH) (Under any acceptable bias state) 175 C -65 to 150 C Total Power Dissipation (PTOT)3, 4, 5 2.3 W Simultaneous Combination of Limits6 (2 or more max. limits) 80 % Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Storage Temperature (TSTG) (Non-Operating Storage) The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Notes: 1T AMBIENT =22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device. 2 Operating at absolute maximum VD continuously is not recommended. If operation at 10V is considered then IDS must be reduced in order to keep the part within its thermal power dissipation limits. Therefore VGS is restricted to <-0.5V. 3 Total Power Dissipation to be de-rated as follows above 22C: PTOT =2.3(0.015W/C)xTHS, where THS =heatsink or ambient temperature above 22C. Example: For a 85C carrier temperature: PTOT =2.3-(0.015x(85-22))=1.4W 4Total Power Dissipation (P TOT) defined as (PDC +PIN)-POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power. 5 Users should avoid exceeding 80% of 2 or more Limits simultaneously. 6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Auplated copper heatsink or rib. Pad Layout Pad A B C Description Gate Pad Drain Pad Source Pad Pin Coordinates (m) 130, 170 380, 170 Note: Coordinates are referenced from the bottom left hand corner of the die to the center of the bond pad opening. 2 of 4 Die Size (m) Die Thickness (m) Min. Bond Pad Opening (mxm) 470x340 75 56x76 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS090609 FPD750 Preferred Assembly Instructions GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die, and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended, and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au 20% Sn) eutectic die attach has a melting point of approximately 280C but the absolute temperature being used depends on the leadframe material used and the particular application. The maximum time at used should be kept to a minimum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4m diameter gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond tool force shall be 35grams to 38grams. Bonding stage temperature shall be 230C to 240C, heated tool (150C to 160C) is recommended. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially when making RF or ground connections. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD/MSL Rating These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged part and therefore no MSL rating applies. Application Notes and Design Data Application Notes and design data including S-parameters, noise parameters, and device model are available on request from www.rfmd.com. Reliability An MTTF of 4.2 million hours ata channel temperature of 150C is achieved for the process used to manufacture this device. Disclaimers This product is not designed for use in any space-based or life-sustaining/supporting equipment. Ordering Information Rev A1 DS090609 Delivery Quantity Ordering Code Full Pack (100) FPD750-000 Small Quantity (25) FPD750-000SQ Sample Quantity (3) FPD750-000S3 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 4 FPD750 4 of 4 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS090609