FPD750-000SQ - RF Micro Devices, Inc. (RFMD)

Features

1 of 4

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

FPD750

0.5W POWER pHEMT

The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor

(pHEMT), featuring a 0.25μmx750μm Schottky barrier gate, defined by high -reso-

lution stepper-based photolithography. The double recessed gate structure mini-

mizes parasitics to optimize performance. The epitaxial structure and processing

have been optimized for reliable high-power applications. The FPD750 also fea-

tures Si3N4 passivation and is available in the low-cost plastic SOT89, SOT343, and

DFN packages.

27.5dBm Linear Output

Power at 12GHz

11.5dB Power Gain at 12GHz

14.5dB Max Stable Gain at

12GHz

38dBm OIP3

50% Power-Added Efficiency

Applications

Narrowband and Broadband

High-Performance Amplifiers

SATCOM Uplink Transmitters

PCS/Cellular Low-Voltage

High-Efficiency Output Ampli-

fiers

Medium-Haul Digital Radio

Transmitters

Rev A1 DS090609

Package Style: Bare Die

FPD7500.5W

Power pH EMT

Parameter Specification Unit Condition

Min. Typ. Max.

Electrical Specifications

P1dB Gain Compression 26.5 27.5 dBm VDS=8V, IDS=50% IDSS

Maximum Stable Gain (S21/S12) 13.5 14.5 dB VDS=8V, IDS=50% IDSS

Power Gain at P1dB (G1dB) 10.5 11.5 dB VDS =8V, IDS =50% IDSS

Power-Added Efficiency (PAE) 45 % VDS =8V, IDS =50% IDSS, POUT=P1dB

OIP338 dBm VDS=8V, IDS=50% IDSS

40 dBm Matched for optimal power, tuned for best IP3

Saturated Drain-Source Current (IDSS) 185 230 280 mA VDS=1.3V, VGS=0V

Maximum Drain-Source Current

(IMAX)370 mA VDS =1.3V, VGS≈+1V

Transconductance (GM) 200 ms VDS=1.3V, VGS=0 V

Gate-Source Leakage Current (IGSO)10 μA VGS=-5V

Pinch-Off Voltage (VP) |1.0| V VDS =1.3V, IDS=0.36mA

Gate-Source Breakdown Voltage

(VBDGS)|12.0| |14.0| V IGS=0.75mA

Gate-Drain Breakdown Voltage

(VBDGD)|14.5| |16.0| V IGD=0.75mA

Thermal Resistivity (θJC) 65 °C/W VDS>6V

Note: TAMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.

2 of 4 Rev A1 DS090609

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

FPD750

Pad Layout

Note: Coordinates are referenced from the bottom left hand

corner of the die to the center of the bond pad opening.

Absolute Maximum Ratings1

Parameter Rating Unit

Drain-Source Voltage (VDS)

(-3V<VGS<-0.5V)2

10 V

Gate-Source Voltage (VGS)

(0V<VDS <+8V)

-3 V

Drain-Source Current (IDS)

(For VDS<2V)

IDSS

Gate Current (IG)

(Forward or reverse current)

7.5 mA

RF Input Power (PIN)

(Under any acceptable bias state)

22 dBm

Channel Operating Temperature (TCH)

(Under any acceptable bias state)

175 °C

Storage Temperature (TSTG)

(Non-Operating Storage)

-65 to 150 °C

Total Power Dissipation (PTOT)3, 4, 5 2.3 W

Simultaneous Combination of Limits6

(2 or more max. limits)

80 %

Notes:

1TAMBIENT =22°C unless otherwise noted; exceeding any one of these absolute max-

imum ratings may cause permanent damage to the device.

2 Operating at absolute maximum VD continuously is not recommended. If operation

at 10V is considered then IDS must be reduced in order to keep the part within

its thermal power dissipation limits. Therefore VGS is restricted to <-0.5V.

3Total Power Dissipation to be de-rated as follows above 22°C: PTOT =2.3-

(0.015W/°C)xTHS, where THS=heatsink or ambient temperature above 22°C.

Example: For a 85°C carrier temperature: PTOT =2.3-(0.015x(85-22))=1.4W

4Total Power Dissipation (PTOT) defined as (PDC+PIN)–POUT, where PDC: DC Bias

Power, PIN: RF Input Power, POUT: RF Output Power.

5 Users should avoid exceeding 80% of 2 or more Limits simultaneously.

6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Au-

plated copper heatsink or rib.

Pad Description Pin Coordinates (μm)

AGate Pad

130, 170

BDrain Pad

380, 170

CSource Pad

Die Size (μm) Die Thickness (μm) Min. Bond Pad Opening (μmxμm)

470x340 75 56x76

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

3 of 4Rev A1 DS090609

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

FPD750

Preferred Assembly Instructions

GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible.

The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be

applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die, and

ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended, and for manual dis-

pense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an

oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin

(80% Au 20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used

depends on the leadframe material used and the particular application. The maximum time at used should be kept to a mini-

mum.

This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter

gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter

wire. The bond tool force shall be 35grams to 38grams. Bonding stage temperature shall be 230°C to 240°C, heated tool

(150°C to 160°C) is recommended. Ultrasonic or thermosonic bonding is not recommended.

Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires

should be minimized especially when making RF or ground connections.

Handling Precautions

To avoid damage to the devices, care should be exercised during handling. Proper Electro-

static Discharge (ESD) precautions should be observed at all stages of storage, handling,

assembly, and testing.

ESD/MSL Rating

These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22-

A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged

part and therefore no MSL rating applies.

Application Notes and Design Data

Application Notes and design data including S-parameters, noise parameters, and device model are available on request from

www.rfmd.com.

Reliability

An MTTF of 4.2 million hours ata channel temperature of 150°C is achieved for the process used to manufacture this device.

Disclaimers

This product is not designed for use in any space-based or life-sustaining/supporting equipment.

Ordering Information

Delivery Quantity Ordering Code

Full Pack (100) FPD750-000

Small Quantity (25) FPD750-000SQ

Sample Quantity (3) FPD750-000S3

4 of 4 Rev A1 DS090609

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

FPD750