4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J1G4 - 128 Meg x 4 x 8 banks MT41J512M8 - 64 Meg x 8 x 8 banks MT41J256M16 - 32 Meg x 16 x 8 banks Options1 Features * * * * * * * * * * * * * * * * * * Marking * Configuration - 1 Gig x 4 - 512 Meg x 8 - 256 Meg x 16 * FBGA package (Pb-free) - x4, x8 - 78-ball (10.5mm x 12mm) Rev. D - 78-ball (9mm x 10.5mm) Rev. E, J * FBGA package (Pb-free) - x16 - 96-ball (10mm x 14mm) Rev. D - 96-ball (9mm x 14mm) Rev. E * Timing - cycle time - 938ps @ CL = 14 (DDR3-2133) - 1.071ns @ CL = 13 (DDR3-1866) - 1.25ns @ CL = 11 (DDR3-1600) - 1.5ns @ CL = 9 (DDR3-1333) - 1.87ns @ CL = 7 (DDR3-1066) * Operating temperature - Commercial (0C T C +95C) - Industrial (-40C T C +95C) * Revision VDD = V DDQ = 1.5V 0.075V 1.5V center-terminated push/pull I/O Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based on tCK Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) Selectable BC4 or BL8 on-the-fly (OTF) Self refresh mode TC of 0C to 95C - 64ms, 8192 cycle refresh at 0C to 85C - 32ms, 8192 cycle refresh at 85C to 95C Self refresh temperature (SRT) Write leveling Multipurpose register Output driver calibration Note: 1G4 512M8 256M16 RA RH RE HA -093 -107 -125 -15E -187E None IT :D/:E/:J 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -0931, 2, 3, 4 2133 14-14-14 13.09 13.09 13.09 -1071, 2, 3 1866 13-13-13 13.91 13.91 13.91 -1251, 2, 1600 11-11-11 13.75 13.75 13.75 -15E1, 1333 9-9-9 13.5 13.5 13.5 -187E 1066 7-7-7 13.1 13.1 13.1 Notes: 1. 2. 3. 4. tRCD (ns) tRP (ns) CL (ns) Backward compatible to 1066, CL = 7 (-187E). Backward compatible to 1333, CL = 9 (-15E). Backward compatible to 1600, CL = 11 (-125). Backward compatible to 1866, CL = 13 (-107). PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 4Gb: x4, x8, x16 DDR3 SDRAM Features Table 2: Addressing Parameter Configuration 1 Gig x 4 512 Meg x 8 256 Meg x 16 128 Meg x 4 x 8 banks 64 Meg x 8 x 8 banks 32 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row addressing 64K (A[15:0]) 64K (A[15:0]) 32K (A[14:0]) Bank addressing 8 (BA[2:0]) 8 (BA[2:0]) 8 (BA[2:0]) 2K (A[11, 9:0]) 1K (A[9:0]) 1K (A[9:0]) 1KB 1KB 2KB Column addressing Page size Figure 1: DDR3 Part Numbers Example Part Number: MT41J512M8RH-125:E - Configuration Package Speed Revision ^ MT41J : :D/:E/:J Revision Temperatu re Configuration 1 Gig x 4 Commercial 1G4 512 Meg x 8 512M8 256 Meg x 16 256M16 Industrial temperature None IT Speed Grade Note: Package 78-ball 10.5mm x 12mm FBGA Rev. D Mark RA 78-ball 9mm x 10.5mm FBGA E, J RH 96-ball 10.0mm x 14mm FBGA 96-ball 9mm x 14mm FBGA D E RE HA -093 tCK = 0.938ns, CL = 14 -107 tCK = 1.071ns, CL = 13 -125 tCK = 1.25ns, CL = 11 -15E tCK = 1.5ns, CL = 9 -187E tCK = 1.87ns, CL = E 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron's Web site: http://www.micron.com. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Features Contents State Diagram ................................................................................................................................................ 11 Functional Description ................................................................................................................................... 12 Industrial Temperature ............................................................................................................................... 12 General Notes ............................................................................................................................................ 12 Functional Block Diagrams ............................................................................................................................. 14 Ball Assignments and Descriptions ................................................................................................................. 17 Package Dimensions ....................................................................................................................................... 23 Electrical Specifications .................................................................................................................................. 27 Absolute Ratings ......................................................................................................................................... 27 Input/Output Capacitance .......................................................................................................................... 28 Thermal Characteristics .................................................................................................................................. 29 Electrical Specifications - IDD Specifications and Conditions ............................................................................ 31 Electrical Characteristics - IDD Specifications .................................................................................................. 42 Electrical Specifications - DC and AC .............................................................................................................. 46 DC Operating Conditions ........................................................................................................................... 46 Input Operating Conditions ........................................................................................................................ 46 AC Overshoot/Undershoot Specification ..................................................................................................... 49 Slew Rate Definitions for Single-Ended Input Signals ................................................................................... 53 Slew Rate Definitions for Differential Input Signals ...................................................................................... 55 ODT Characteristics ....................................................................................................................................... 56 ODT Resistors ............................................................................................................................................ 57 ODT Sensitivity .......................................................................................................................................... 58 ODT Timing Definitions ............................................................................................................................. 58 Output Driver Impedance ............................................................................................................................... 62 34 Ohm Output Driver Impedance .............................................................................................................. 63 34 Ohm Driver ............................................................................................................................................ 64 34 Ohm Output Driver Sensitivity ................................................................................................................ 65 Alternative 40 Ohm Driver .......................................................................................................................... 66 40 Ohm Output Driver Sensitivity ................................................................................................................ 66 Output Characteristics and Operating Conditions ............................................................................................ 68 Reference Output Load ............................................................................................................................... 70 Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 71 Slew Rate Definitions for Differential Output Signals .................................................................................... 72 Speed Bin Tables ............................................................................................................................................ 73 Electrical Characteristics and AC Operating Conditions ................................................................................... 78 Command and Address Setup, Hold, and Derating ........................................................................................... 98 Data Setup, Hold, and Derating ...................................................................................................................... 106 Commands - Truth Tables ............................................................................................................................. 115 Commands ................................................................................................................................................... 118 DESELECT ................................................................................................................................................ 118 NO OPERATION ........................................................................................................................................ 118 ZQ CALIBRATION LONG ........................................................................................................................... 118 ZQ CALIBRATION SHORT .......................................................................................................................... 118 ACTIVATE ................................................................................................................................................. 118 READ ........................................................................................................................................................ 118 WRITE ...................................................................................................................................................... 119 PRECHARGE ............................................................................................................................................. 120 REFRESH .................................................................................................................................................. 120 SELF REFRESH .......................................................................................................................................... 121 DLL Disable Mode ..................................................................................................................................... 122 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Features Input Clock Frequency Change ...................................................................................................................... 126 Write Leveling ............................................................................................................................................... 128 Write Leveling Procedure ........................................................................................................................... 130 Write Leveling Mode Exit Procedure ........................................................................................................... 132 Initialization ................................................................................................................................................. 133 Mode Registers .............................................................................................................................................. 135 Mode Register 0 (MR0) ................................................................................................................................... 136 Burst Length ............................................................................................................................................. 136 Burst Type ................................................................................................................................................. 137 DLL RESET ................................................................................................................................................ 138 Write Recovery .......................................................................................................................................... 138 Precharge Power-Down (Precharge PD) ...................................................................................................... 139 CAS Latency (CL) ....................................................................................................................................... 139 Mode Register 1 (MR1) ................................................................................................................................... 140 DLL Enable/DLL Disable ........................................................................................................................... 140 Output Drive Strength ............................................................................................................................... 141 OUTPUT ENABLE/DISABLE ...................................................................................................................... 141 TDQS Enable ............................................................................................................................................. 141 On-Die Termination .................................................................................................................................. 142 WRITE LEVELING ..................................................................................................................................... 142 POSTED CAS ADDITIVE Latency ................................................................................................................ 142 Mode Register 2 (MR2) ................................................................................................................................... 143 CAS Write Latency (CWL) ........................................................................................................................... 144 AUTO SELF REFRESH (ASR) ....................................................................................................................... 144 SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 145 SRT vs. ASR ............................................................................................................................................... 145 DYNAMIC ODT ......................................................................................................................................... 145 Mode Register 3 (MR3) ................................................................................................................................... 146 MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 146 MPR Functional Description ...................................................................................................................... 147 MPR Register Address Definitions and Bursting Order ................................................................................. 148 MPR Read Predefined Pattern .................................................................................................................... 154 MODE REGISTER SET (MRS) Command ........................................................................................................ 154 ZQ CALIBRATION Operation ......................................................................................................................... 155 ACTIVATE Operation ..................................................................................................................................... 156 READ Operation ............................................................................................................................................ 158 WRITE Operation .......................................................................................................................................... 169 DQ Input Timing ....................................................................................................................................... 177 PRECHARGE Operation ................................................................................................................................. 179 SELF REFRESH Operation .............................................................................................................................. 179 Extended Temperature Usage ........................................................................................................................ 181 Power-Down Mode ........................................................................................................................................ 182 RESET Operation ........................................................................................................................................... 190 On-Die Termination (ODT) ............................................................................................................................ 192 Functional Representation of ODT ............................................................................................................. 192 Nominal ODT ............................................................................................................................................ 192 Dynamic ODT ............................................................................................................................................... 194 Dynamic ODT Special Use Case ................................................................................................................. 194 Functional Description .............................................................................................................................. 194 Synchronous ODT Mode ................................................................................................................................ 200 ODT Latency and Posted ODT .................................................................................................................... 200 Timing Parameters .................................................................................................................................... 200 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Features ODT Off During READs .............................................................................................................................. 203 Asynchronous ODT Mode .............................................................................................................................. 205 Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 207 Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 209 Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 211 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Features List of Figures Figure 1: DDR3 Part Numbers .......................................................................................................................... 2 Figure 2: Simplified State Diagram ................................................................................................................. 11 Figure 3: 1 Gig x 4 Functional Block Diagram .................................................................................................. 14 Figure 4: 512 Meg x 8 Functional Block Diagram ............................................................................................. 15 Figure 5: 256 Meg x 16 Functional Block Diagram ........................................................................................... 16 Figure 6: 78-Ball FBGA - x4, x8 (Top View) ...................................................................................................... 17 Figure 7: 96-Ball FBGA - x16 (Top View) ......................................................................................................... 18 Figure 8: 78-Ball FBGA - x4, x8 (RA) ................................................................................................................ 23 Figure 9: 78-Ball FBGA - x4, x8 (RH) ............................................................................................................... 24 Figure 10: 96-Ball FBGA - x16 (RE) ................................................................................................................. 25 Figure 11: 96-Ball FBGA - x16 (HA) ................................................................................................................. 26 Figure 12: Thermal Measurement Point ......................................................................................................... 30 Figure 13: Input Signal .................................................................................................................................. 48 Figure 14: Overshoot ..................................................................................................................................... 49 Figure 15: Undershoot ................................................................................................................................... 49 Figure 16: V IX for Differential Signals .............................................................................................................. 51 Figure 17: Single-Ended Requirements for Differential Signals ........................................................................ 51 Figure 18: Definition of Differential AC-Swing and tDVAC ............................................................................... 52 Figure 19: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 54 Figure 20: Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .................................. 55 Figure 21: ODT Levels and I-V Characteristics ................................................................................................ 56 Figure 22: ODT Timing Reference Load .......................................................................................................... 59 Figure 23: tAON and tAOF Definitions ............................................................................................................ 60 Figure 24: tAONPD and tAOFPD Definitions ................................................................................................... 60 Figure 25: tADC Definition ............................................................................................................................. 61 Figure 26: Output Driver ................................................................................................................................ 62 Figure 27: DQ Output Signal .......................................................................................................................... 69 Figure 28: Differential Output Signal .............................................................................................................. 70 Figure 29: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 70 Figure 30: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 71 Figure 31: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 72 Figure 32: Nominal Slew Rate and tVAC for tIS (Command and Address - Clock) ............................................. 102 Figure 33: Nominal Slew Rate for tIH (Command and Address - Clock) ........................................................... 103 Figure 34: Tangent Line for tIS (Command and Address - Clock) .................................................................... 104 Figure 35: Tangent Line for tIH (Command and Address - Clock) .................................................................... 105 Figure 36: Nominal Slew Rate and tVAC for tDS (DQ - Strobe) ......................................................................... 111 Figure 37: Nominal Slew Rate for tDH (DQ - Strobe) ...................................................................................... 112 Figure 38: Tangent Line for tDS (DQ - Strobe) ................................................................................................ 113 Figure 39: Tangent Line for tDH (DQ - Strobe) ............................................................................................... 114 Figure 40: Refresh Mode ............................................................................................................................... 121 Figure 41: DLL Enable Mode to DLL Disable Mode ........................................................................................ 123 Figure 42: DLL Disable Mode to DLL Enable Mode ........................................................................................ 124 Figure 43: DLL Disable tDQSCK .................................................................................................................... 125 Figure 44: Change Frequency During Precharge Power-Down ........................................................................ 127 Figure 45: Write Leveling Concept ................................................................................................................. 128 Figure 46: Write Leveling Sequence ............................................................................................................... 131 Figure 47: Write Leveling Exit Procedure ....................................................................................................... 132 Figure 48: Initialization Sequence ................................................................................................................. 134 Figure 49: MRS to MRS Command Timing ( tMRD) ......................................................................................... 135 Figure 50: MRS to nonMRS Command Timing ( tMOD) .................................................................................. 136 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Features Figure 51: Mode Register 0 (MR0) Definitions ................................................................................................ 137 Figure 52: READ Latency .............................................................................................................................. 139 Figure 53: Mode Register 1 (MR1) Definition ................................................................................................. 140 Figure 54: READ Latency (AL = 5, CL = 6) ....................................................................................................... 143 Figure 55: Mode Register 2 (MR2) Definition ................................................................................................. 144 Figure 56: CAS Write Latency ........................................................................................................................ 144 Figure 57: Mode Register 3 (MR3) Definition ................................................................................................. 146 Figure 58: Multipurpose Register (MPR) Block Diagram ................................................................................. 147 Figure 59: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 150 Figure 60: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 151 Figure 61: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 152 Figure 62: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 153 Figure 63: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 155 Figure 64: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 156 Figure 65: Example: tFAW ............................................................................................................................. 157 Figure 66: READ Latency .............................................................................................................................. 158 Figure 67: Consecutive READ Bursts (BL8) .................................................................................................... 160 Figure 68: Consecutive READ Bursts (BC4) .................................................................................................... 160 Figure 69: Nonconsecutive READ Bursts ....................................................................................................... 161 Figure 70: READ (BL8) to WRITE (BL8) .......................................................................................................... 161 Figure 71: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 162 Figure 72: READ to PRECHARGE (BL8) .......................................................................................................... 162 Figure 73: READ to PRECHARGE (BC4) ......................................................................................................... 163 Figure 74: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 163 Figure 75: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 163 Figure 76: Data Output Timing - tDQSQ and Data Valid Window .................................................................... 165 Figure 77: Data Strobe Timing - READs ......................................................................................................... 166 Figure 78: Method for Calculating tLZ and tHZ ............................................................................................... 167 Figure 79: tRPRE Timing ............................................................................................................................... 167 Figure 80: tRPST Timing ............................................................................................................................... 168 Figure 81: tWPRE Timing .............................................................................................................................. 170 Figure 82: tWPST Timing .............................................................................................................................. 170 Figure 83: WRITE Burst ................................................................................................................................ 171 Figure 84: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 172 Figure 85: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 172 Figure 86: Nonconsecutive WRITE to WRITE ................................................................................................. 173 Figure 87: WRITE (BL8) to READ (BL8) .......................................................................................................... 173 Figure 88: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 174 Figure 89: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 175 Figure 90: WRITE (BL8) to PRECHARGE ........................................................................................................ 176 Figure 91: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 176 Figure 92: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 177 Figure 93: Data Input Timing ........................................................................................................................ 178 Figure 94: Self Refresh Entry/Exit Timing ...................................................................................................... 180 Figure 95: Active Power-Down Entry and Exit ................................................................................................ 184 Figure 96: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 185 Figure 97: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ................................................................ 185 Figure 98: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ............................................. 186 Figure 99: Power-Down Entry After WRITE .................................................................................................... 186 Figure 100: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 187 Figure 101: REFRESH to Power-Down Entry .................................................................................................. 187 Figure 102: ACTIVATE to Power-Down Entry ................................................................................................. 188 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Features Figure 103: Figure 104: Figure 105: Figure 106: Figure 107: Figure 108: Figure 109: Figure 110: Figure 111: Figure 112: Figure 113: Figure 114: Figure 115: Figure 116: Figure 117: Figure 118: Figure 119: Figure 120: PRECHARGE to Power-Down Entry ............................................................................................. 188 MRS Command to Power-Down Entry ......................................................................................... 189 Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 189 RESET Sequence ......................................................................................................................... 191 On-Die Termination ................................................................................................................... 192 Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 197 Dynamic ODT: Without WRITE Command .................................................................................. 197 Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 198 Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 199 Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 199 Synchronous ODT ...................................................................................................................... 201 Synchronous ODT (BC4) ............................................................................................................. 202 ODT During READs .................................................................................................................... 204 Asynchronous ODT Timing with Fast ODT Transition .................................................................. 206 Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 208 Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 210 Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 212 Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 212 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Features List of Tables Table 1: Key Timing Parameters ....................................................................................................................... 1 Table 2: Addressing ......................................................................................................................................... 2 Table 3: 78-Ball FBGA - x4, x8 Ball Descriptions .............................................................................................. 19 Table 4: 96-Ball FBGA - x16 Ball Descriptions ................................................................................................. 21 Table 5: Absolute Maximum Ratings .............................................................................................................. 27 Table 6: DDR3 Input/Output Capacitance ...................................................................................................... 28 Table 7: Thermal Characteristics .................................................................................................................... 29 Table 8: Timing Parameters Used for I DD Measurements - Clock Units ............................................................ 31 Table 9: IDD0 Measurement Loop ................................................................................................................... 32 Table 10: IDD1 Measurement Loop .................................................................................................................. 33 Table 11: IDD Measurement Conditions for Power-Down Currents ................................................................... 34 Table 12: IDD2N and IDD3N Measurement Loop ................................................................................................ 35 Table 13: IDD2NT Measurement Loop .............................................................................................................. 35 Table 14: IDD4R Measurement Loop ................................................................................................................ 36 Table 15: IDD4W Measurement Loop ............................................................................................................... 37 Table 16: IDD5B Measurement Loop ................................................................................................................ 38 Table 17: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 .................................................................... 39 Table 18: IDD7 Measurement Loop .................................................................................................................. 40 Table 19: IDD Maximum Limits - Die Rev D ..................................................................................................... 42 Table 20: IDD Maximum Limits Die Rev E, J ..................................................................................................... 44 Table 21: DC Electrical Characteristics and Operating Conditions ................................................................... 46 Table 22: DC Electrical Characteristics and Input Conditions .......................................................................... 46 Table 23: Input Switching Conditions ............................................................................................................. 47 Table 24: Control and Address Pins ................................................................................................................ 49 Table 25: Clock, Data, Strobe, and Mask Pins .................................................................................................. 49 Table 26: Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .................................................. 50 Table 27: Allowed Time Before Ringback ( tDVAC) for CK - CK# and DQS - DQS# ............................................... 52 Table 28: Single-Ended Input Slew Rate Definition .......................................................................................... 53 Table 29: Differential Input Slew Rate Definition ............................................................................................. 55 Table 30: On-Die Termination DC Electrical Characteristics ............................................................................ 56 Table 31: RTT Effective Impedances ................................................................................................................ 57 Table 32: ODT Sensitivity Definition .............................................................................................................. 58 Table 33: ODT Temperature and Voltage Sensitivity ........................................................................................ 58 Table 34: ODT Timing Definitions .................................................................................................................. 59 Table 35: Reference Settings for ODT Timing Measurements ........................................................................... 59 Table 36: 34 Ohm Driver Impedance Characteristics ....................................................................................... 63 Table 37: 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ....................................................... 64 Table 38: 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = 1.5V ................................................................ 64 Table 39: 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = 1.575V ............................................................. 64 Table 40: 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = 1.425V ............................................................. 65 Table 41: 34 Ohm Output Driver Sensitivity Definition .................................................................................... 65 Table 42: 34 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 65 Table 43: 40 Ohm Driver Impedance Characteristics ....................................................................................... 66 Table 44: 40 Ohm Output Driver Sensitivity Definition .................................................................................... 66 Table 45: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 67 Table 46: Single-Ended Output Driver Characteristics ..................................................................................... 68 Table 47: Differential Output Driver Characteristics ........................................................................................ 69 Table 48: Single-Ended Output Slew Rate Definition ....................................................................................... 71 Table 49: Differential Output Slew Rate Definition .......................................................................................... 72 Table 50: DDR3-1066 Speed Bins ................................................................................................................... 73 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Features Table 51: Table 52: Table 53: Table 54: Table 55: Table 56: Table 57: Table 58: Table 59: Table 60: Table 61: Table 62: Table 63: Table 64: Table 65: Table 66: Table 67: Table 68: Table 69: Table 70: Table 71: Table 72: Table 73: Table 74: Table 75: Table 76: Table 77: Table 78: Table 79: Table 80: Table 81: Table 82: Table 83: Table 84: Table 85: Table 86: Table 87: Table 88: Table 89: Table 90: Table 91: DDR3-1333 Speed Bins ................................................................................................................... 74 DDR3-1600 Speed Bins ................................................................................................................... 75 DDR3-1866 Speed Bins ................................................................................................................... 76 DDR3-2133 Speed Bins ................................................................................................................... 77 Electrical Characteristics and AC Operating Conditions .................................................................... 78 Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 88 Command and Address Setup and Hold Values Referenced - AC/DC-Based ...................................... 98 Derating Values for tIS/tIH - AC175/DC100-Based ............................................................................ 99 Derating Values for tIS/tIH - AC150/DC100-Based ............................................................................ 99 Derating Values for tIS/tIH - AC135/DC100-Based ........................................................................... 100 Derating Values for tIS/tIH - AC125/DC100-Based ........................................................................... 100 Minimum Required Time tVAC Above V IH(AC) or Below V IL(AC)for Valid Transition .............................. 101 DDR3 Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) - AC/DC-Based ......................... 106 Derating Values for tDS/tDH - AC175/DC100-Based ........................................................................ 107 Derating Values for tDS/tDH - AC150/DC100-Based ........................................................................ 107 Derating Values for tDS/tDH - AC135/DC100-Based at 1V/ns ........................................................... 108 Derating Values for tDS/tDH - AC135/DC100-Based at 2V/ns ........................................................... 109 Required Minimum Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition ......................... 110 Truth Table - Command ................................................................................................................. 115 Truth Table - CKE .......................................................................................................................... 117 READ Command Summary ............................................................................................................ 119 WRITE Command Summary .......................................................................................................... 119 READ Electrical Characteristics, DLL Disable Mode ......................................................................... 125 Write Leveling Matrix ..................................................................................................................... 129 Burst Order .................................................................................................................................... 138 MPR Functional Description of MR3 Bits ........................................................................................ 147 MPR Readouts and Burst Order Bit Mapping ................................................................................... 148 Self Refresh Temperature and Auto Self Refresh Description ............................................................ 181 Self Refresh Mode Summary ........................................................................................................... 181 Command to Power-Down Entry Parameters .................................................................................. 182 Power-Down Modes ....................................................................................................................... 183 Truth Table - ODT (Nominal) ......................................................................................................... 193 ODT Parameters ............................................................................................................................ 193 Write Leveling with Dynamic ODT Special Case .............................................................................. 194 Dynamic ODT Specific Parameters ................................................................................................. 195 Mode Registers for RTT,nom ............................................................................................................. 195 Mode Registers for RTT(WR) ............................................................................................................. 196 Timing Diagrams for Dynamic ODT ................................................................................................ 196 Synchronous ODT Parameters ........................................................................................................ 201 Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 206 ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................... 208 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM State Diagram State Diagram Figure 2: Simplified State Diagram CKE L Power applied MRS, MPR, write leveling Initialization Reset procedure Power on Self refresh SRE ZQCL From any state RESET ZQ calibration MRS SRX REF ZQCL/ZQCS Refreshing Idle PDE ACT PDX Active powerdown Precharge powerdown Activating PDX CKE L CKE L PDE Bank active WRITE WRITE READ WRITE AP Writing READ READ AP READ WRITE WRITE AP Reading READ AP WRITE AP READ AP PRE, PREA Writing PRE, PREA PRE, PREA Reading Precharging Automatic sequence Command sequence ACT = ACTIVATE MPR = Multipurpose register MRS = Mode register set PDE = Power-down entry PDX = Power-down exit PRE = PRECHARGE PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN PREA = PRECHARGE ALL READ = RD, RDS4, RDS8 READ AP = RDAP, RDAPS4, RDAPS8 REF = REFRESH RESET = START RESET PROCEDURE SRE = Self refresh entry 11 SRX = Self refresh exit WRITE = WR, WRS4, WRS8 WRITE AP = WRAP, WRAPS4, WRAPS8 ZQCL = ZQ LONG CALIBRATION ZQCS = ZQ SHORT CALIBRATION Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Functional Description Functional Description DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins. The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble. Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE commands are used to select the bank and the starting column location for the burst access. The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM allows for concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time. A self refresh mode is provided, along with a power-saving, power-down mode. Industrial Temperature The industrial temperature (IT) device requires that the case temperature not exceed -40C or 95C. JEDEC specifications require the refresh rate to double when T C exceeds 85C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when T C is < 0C or >95C. General Notes * The functionality and the timing specifications discussed in this data sheet are for the DLL enable mode of operation (normal operation). * Throughout this data sheet, various figures and text refer to DQs as "DQ." DQ is to be interpreted as any and all DQ collectively, unless specifically stated otherwise. * The terms "DQS" and "CK" found throughout this data sheet are to be interpreted as DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Functional Description * Complete functionality may be described throughout the document; any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. * Any specific requirement takes precedence over a general statement. * Any functionality not specifically stated is considered undefined, illegal, and not supported, and can result in unknown operation. * Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4, x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4, x8). * Dynamic ODT has a special use case: when DDR3 devices are architected for use in a single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer to the Dynamic ODT Special Use Case section. * A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be used, use the lower byte for data transfers and terminate the upper byte as noted: - - - - Connect UDQS to ground via 1k* resistor. Connect UDQS# to V DD via 1k* resistor. Connect UDM to V DD via 1k* resistor. Connect DQ[15:8] individually to either V SS, V DD, or V REF via 1k resistors,* or float DQ[15:8]. *If ODT is used, 1k resistor should be changed to 4x that of the selected ODT. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Functional Block Diagrams Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Figure 3: 1 Gig x 4 Functional Block Diagram ODT control ODT ZQ RZQ ZQCL, ZQCS CKE VSSQ To pull-up/pull-down networks ZQ CAL RESET# Control logic A12 CK, CK# VDDQ/2 BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 19 Columns 0, 1, and 2 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 16 16 Bank 0 rowaddress latch and decoder 65,536 DLL (1 . . . 4) 32 READ FIFO and data MUX 4 DQ[3:0] READ drivers VDDQ/2 32 BC4 BC4 OTF I/O gating DM mask logic A[15:0] BA[2:0] 19 Address register 3 RTT,nom sw1 sw2 DM (1, 2) Columnaddress counter/ latch DQS, DQS# VDDQ/2 32 Data interface Column decoder 4 Data WRITE drivers and input logic 8 RTT,nom sw1 RTT(WR) sw2 DM 3 Columns 0, 1, and 2 CK, CK# PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN RTT(WR) Bank control logic 256 (x32) 11 DQ[3:0] DQS, DQS# 8,192 3 sw2 sw1 Bank 0 memory array (65,536 x 256 x 32) Sense amplifiers RTT(WR) CK, CK# 16 Rowaddress MUX RTT,nom 14 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Functional Block Diagrams Figure 4: 512 Meg x 8 Functional Block Diagram ODT control ODT ZQ RZQ Control logic CKE VSSQ To ODT/output drivers ZQ CAL RESET# ZQCL, ZQCS A12 VDDQ/2 CK, CK# BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 19 CK, CK# sw1 16 16 Bank 0 rowaddress 65,536 latch and decoder (1 . . . 8) Bank 0 Memory array (65,536 x 128 x 64) Sense amplifiers 64 READ FIFO and data MUX DQ8 8 19 Address register 3 VDDQ/2 64 BC4 OTF sw1 RTT(WR) sw2 (1, 2) Columnaddress counter/ latch DQS/DQS# VDDQ/2 64 Data interface Column decoder 8 Data Write drivers and input logic 7 RTT,nom sw1 RTT(WR) sw2 DM/TDQS (shared pin) 3 Columns 0, 1, and 2 CK, CK# PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN RTT,nom Bank control logic (128 x64) 10 DQ[7:0] DQS, DQS# I/O gating DM mask logic 3 A[15:0] BA[2:0] TDQS# DQ[7:0] Read drivers BC4 8,192 sw2 DLL 16 Rowaddress MUX RTT(WR) RTT,nom Columns 0, 1, and 2 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 15 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Functional Block Diagrams Figure 5: 256 Meg x 16 Functional Block Diagram ODT control ODT ZQ RZQ Control logic CKE VSSQ To ODT/output drivers ZQ CAL RESET# ZQCL, ZQCS A12 VDDQ/2 CK, CK# BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 18 Column 0, 1, and 2 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 15 15 Bank 0 rowaddress latch and decoder 32,768 DLL (1 . . . 16) 128 READ FIFO and data MUX 16 DQ[15:0] READ drivers LDQS, LDQS#, UDQS, UDQS# BC4 128 18 Address register 3 sw2 LDQS, LDQS# Bank control logic (1 . . . 4) Columnaddress counter/ latch UDQS, UDQS# VDDQ/2 128 Data interface Column decoder 16 Data WRITE drivers and input logic RTT,nom sw1 RTT(WR) sw2 7 (1, 2) LDM/UDM 3 Columns 0, 1, and 2 CK, CK# PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN RTT(WR) I/O gating DM mask logic (128 x128) 10 RTT,nom sw1 BC4 OTF 3 DQ[15:0] VDDQ/2 Sense amplifiers A[14:0] BA[2:0] sw2 sw1 Bank 0 memory array (32,768 x 128 x 128) 16,384 RTT(WR) CK, CK# 13 Rowaddress MUX RTT,nom 16 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Ball Assignments and Descriptions Figure 6: 78-Ball FBGA - x4, x8 (Top View) 1 2 3 VSS VDD VSS VDDQ 4 5 6 7 8 9 NC NF, NF/TDQS# VSS VDD VSSQ DQ0 DM, DM/TDQS VSSQ VDDQ DQ2 DQS DQ1 DQ3 VSSQ NF, DQ6 DQS# VDD VSS VSSQ A B C D VSSQ E VREFDQ NF, DQ7 NF, DQ5 VDDQ NF, DQ4 VDDQ F NC VSS RAS# CK VSS NC ODT VDD CAS# CK# VDD CKE NC CS# WE# A10/AP ZQ NC VSS BA0 BA2 A15 VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# A13 A14 A8 VSS G H J K L M N Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. Ball descriptions listed in Table 3 (page 19) are listed as "x4, x8" if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only--selectable between NF or TDQS# via MRS (symbols are defined in Table 3). 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Figure 7: 96-Ball FBGA - x16 (Top View) 1 2 3 VDDQ DQ13 VSSQ 4 5 6 7 8 9 DQ15 DQ12 VDDQ VSS VDD VSS UDQS# DQ14 VSSQ VDDQ DQ11 DQ9 UDQS DQ10 VDDQ VSSQ VDDQ UDM DQ8 VSSQ VDD VSS VSSQ DQ0 LDM VSSQ VDDQ VDDQ DQ2 LDQS DQ1 DQ3 VSSQ VSSQ DQ6 LDQS# VDD VSS VSSQ VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ NC VSS RAS# CK VSS NC ODT VDD CAS# CK# VDD CKE NC CS# WE# A10/AP ZQ NC VSS BA0 BA2 NC VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# A13 A14 A8 VSS A B C D E F G H J K L M N P R T Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. Ball descriptions listed in Table 4 (page 21) are listed as "x4, x8" if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only--selectable between NF or TDQS# via MRS (symbols are defined in Table 3). Table 3: 78-Ball FBGA - x4, x8 Ball Descriptions Symbol Type Description A[15:13], A12/BC#, A11, A10/AP, A[9:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 69 (page 115). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/ disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle), or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. DM Input Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with the input data during a write access. Although the DM ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on the x8. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Table 3: 78-Ball FBGA - x4, x8 Ball Descriptions (Continued) Symbol Type Description RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH 0.8 x VDD and DC LOW 0.2 x VDDQ. RESET# assertion and desertion are asynchronous. DQ[3:0] I/O Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are referenced to VREFDQ. DQ[7:0] I/O Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are referenced to VREFDQ. DQS, DQS# I/O Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. TDQS, TDQS# Output Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled, DM is disabled, and the TDQS and TDQS# balls provide termination resistance. VDD Supply Power supply: 1.5V 0.075V. VDDQ Supply DQ power supply: 1.5V 0.075V. Isolated on the device for improved noise immunity. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference NC - No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). NF - No function: When configured as a x4 device, these balls are NF. When configured as a x8 device, these balls are defined as TDQS#, DQ[7:4]. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN External reference ball for output drive calibration: This ball is tied to an external 240 resistor (RZQ), which is tied to VSSQ. 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Table 4: 96-Ball FBGA - x16 Ball Descriptions Symbol Type Description A[14:13], A12/BC#, A11, A10/AP, A[9:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 69 (page 115). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle),or active power-down (row active in any bank). CKE is synchronous for powerdown entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte input data is masked when LDM is sampled HIGH along with the input data during a write access. Although the LDM ball is input-only, the LDM loading is designed to match that of the DQ and DQS balls. LDM is referenced to VREFDQ. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#, UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS, and NF/TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH 0.8 x VDD and DC LOW 0.2 x VDDQ. RESET# assertion and desertion are asynchronous. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Table 4: 96-Ball FBGA - x16 Ball Descriptions (Continued) Symbol Type UDM Input DQ[7:0] I/O Data input/output: Lower byte of bidirectional data bus for the x16 configuration. DQ[7:0] are referenced to VREFDQ. DQ[15:8] I/O Data input/output: Upper byte of bidirectional data bus for the x16 configuration. DQ[15:8] are referenced to VREFDQ. LDQS, LDQS# I/O Lower byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. UDQS, UDQS# I/O Upper byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. DQS is center-aligned to write data. VDD Supply Power supply: 1.5V 0.075V. VDDQ Supply DQ power supply: 1.5V 0.075V. Isolated on the device for improved noise immunity. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference NC - PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Description Input data mask: UDM is an upper-byte, input mask signal for write data. Upperbyte input data is masked when UDM is sampled HIGH along with that input data during a WRITE access. Although the UDM ball is input-only, the UDM loading is designed to match that of the DQ and DQS balls. UDM is referenced to VREFDQ. External reference ball for output drive calibration: This ball is tied to an external 240 resistor (RZQ), which is tied to VSSQ. No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions Package Dimensions Figure 8: 78-Ball FBGA - x4, x8 (RA) 0.155 Seating plane A 0.12 A 1.8 CTR Nonconductive overmold 78X O0.45 Dimensions apply to solder balls postreflow on O0.35 SMD ball pads. Ball A1 ID 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N 12 0.1 9.6 CTR 0.8 TYP 1.1 0.1 0.8 TYP 6.4 CTR 0.25 MIN 10.5 0.1 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions Figure 9: 78-Ball FBGA - x4, x8 (RH) 0.155 Seating plane A 78X O0.45 Dimensions apply to solder balls postreflow on O0.35 SMD ball pads. 0.12 A 1.8 CTR Nonconductive overmold Ball A1 ID (covered by SR) 9 8 7 3 2 Ball A1 ID 1 A B C D E F 10.5 0.1 G 9.6 CTR H J K L M N 0.8 TYP 0.8 TYP 1.1 0.1 6.4 CTR 0.25 MIN 9 0.1 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions Figure 10: 96-Ball FBGA - x16 (RE) 0.155 Seating plane A 0.12 A 1.8 CTR Nonconductive overmold 96X O0.45 Dimensions apply to solder balls post-reflow on O0.35 SMD ball pads Ball A1 ID 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N P R T 14 0.1 12 CTR 0.8 TYP 1.1 0.1 0.8 TYP 0.25 MIN 6.4 CTR 10 0.1 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions Figure 11: 96-Ball FBGA - x16 (HA) 0.155 Seating plane 1.8 CTR Nonconductive overmold 96X O0.45 Dimensions apply to solder balls post-reflow on O0.35 SMD ball pads. 9 8 7 3 A 2 0.12 A Ball A1 Index (covered by SR) 1 Ball A1 Index A B C D E F G H 12 CTR J 14 0.1 K L M N P R 0.8 TYP T 0.8 TYP 1.1 0.1 6.4 CTR 0.25 MIN 9 0.1 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications Electrical Specifications Absolute Ratings Stresses greater than those listed in Table 5 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 5: Absolute Maximum Ratings Symbol Parameter Min Max Unit Notes 1 VDD VDD supply voltage relative to VSS -0.4 1.975 V VDDQ VDD supply voltage relative to VSSQ -0.4 1.975 V VIN, VOUT Voltage on any pin relative to VSS -0.4 1.975 V 0 95 C 2, 3 Operating case temperature - Industrial -40 95 C 2, 3 Operating case temperature - Automotive -40 105 C 2, 3 Storage temperature -55 150 C TC TSTG Operating case temperature - Commercial Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be greater than 0.6 x VDDQ. When VDD and VDDQ are <500mV, VREF can be 300mV. 2. MAX operating case temperature. TC is measured in the center of the package. 3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC during operation. 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications Input/Output Capacitance Table 6: DDR3 Input/Output Capacitance Note 1 applies to the entire table Capacitance Parameters 800 1066 1333 1600 1866 2133 Symbol Min Max Min Max Min Max Min Max Min Max Min Max Unit Notes CK and CK# CCK 0.8 1.6 0.8 1.6 0.8 1.4 0.8 1.4 0.8 1.3 0.8 1.3 pF C: CK to CK# CDCK 0 0.15 0 0.15 0 0.15 0 0.15 0 0.15 0 0.15 pF Single-end I/O: DQ, DM CIO 1.5 3.0 1.5 2.7 1.5 2.5 1.5 2.3 1.5 2.2 1.5 2.1 pF 2 Differential I/O: DQS, DQS#, TDQS, TDQS# CIO 1.5 3.0 1.5 2.7 1.5 2.5 1.5 2.3 1.5 2.2 1.5 2.1 pF 3 CDDQS 0 0.2 0 0.2 0 0.15 0 0.15 0 0.15 0 0.15 pF 3 CDIO -0.5 0.3 -0.5 0.3 -0.5 0.3 -0.5 0.3 -0.5 0.3 -0.5 0.3 pF 4 CI 0.75 1.4 0.75 1.35 0.75 1.3 0.75 1.3 0.75 1.2 0.75 1.2 pF 5 C: CTRL to CK CDI_CTRL -0.5 0.3 -0.5 0.3 -0.4 0.2 -0.4 0.2 -0.4 0.2 -0.4 0.2 pF 6 C: CMD_ADDR to CK CDI_CMD_ -0.5 0.5 -0.5 0.5 -0.4 0.4 -0.4 0.4 -0.4 0.4 -0.4 0.4 pF 7 C: DQS to DQS#, TDQS, TDQS# C: DQ to DQS Inputs (CTRL, CMD, ADDR) ADDR ZQ pin capacitance CZQ - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 pF Reset pin capacitance CRE - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 pF Notes: 1. VDD = 1.5V 0.075mV, VDDQ = VDD, VREF = VSS, f = 100 MHz, TC = 25C. VOUT(DC) = 0.5 x VDDQ, VOUT = 0.1V (peak-to-peak). 2. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading. 3. Includes TDQS, TDQS#. CDDQS is for DQS vs. DQS# and TDQS vs. TDQS# separately. 4. CDIO = CIO(DQ) - 0.5 x (CIO(DQS) + CIO(DQS#)). 5. Excludes CK, CK#; CTRL = ODT, CS#, and CKE; CMD = RAS#, CAS#, and WE#; ADDR = A[n:0], BA[2:0]. 6. CDI_CTRL = CI(CTRL) - 0.5 x (CCK(CK) + CCK(CK#)). 7. CDI_CMD_ADDR = CI(CMD_ADDR) - 0.5 x (CCK(CK) + CCK(CK#)). PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Thermal Characteristics Thermal Characteristics Table 7: Thermal Characteristics Parameter/Condition Value Units Symbol Notes Operating case temperature Commercial 0 to +85 C TC 1, 2, 3 0 to +95 C TC 1, 2, 3, 4 Operating case temperature Industrial -40 to +85 C TC 1, 2, 3 -40 to +95 C TC 1, 2, 3, 4 Operating case temperature Automotive -40 to +85 C TC 1, 2, 3 -40 to +105 C TC 1, 2, 3, 4 C/W JC 5 C/W JC 5 C/W JC 5 Junction-to-case (TOP) Die Rev D Junction-to-case (TOP) Die Rev E Junction-to-case (TOP) Die Rev J Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 78-ball "RA" 2.4 96-ball "RE" 2.4 78-ball "RH" 4.0 96-ball "HA" 3.9 78-ball "RH" 4.3 1. MAX operating case temperature. TC is measured in the center of the package. 2. A thermal solution must be designed to ensure the DRAM device does not exceed the maximum TC during operation. 3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC during operation. 4. If TC exceeds 85C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9s interval refresh rate. The use of SRT or ASR (if available) must be enabled. 5. The thermal resistance data is based off of a number of samples from multiple lots and should be viewed as a typical number. 29 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Thermal Characteristics Figure 12: Thermal Measurement Point / 7FWHVWSRLQW / : : PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions Electrical Specifications - IDD Specifications and Conditions Within the following IDD measurement tables, the following definitions and conditions are used, unless stated otherwise: * * * * * * * * * * * * * * * * LOW: V IN V IL(AC)max; HIGH: V IN V IH(AC)min. Midlevel: Inputs are V REF = V DD/2. RON set to RZQ/7 (34 RTT,nom set to RZQ/6 (40 RTT(WR) set to RZQ/2 (120 QOFF is enabled in MR1. ODT is enabled in MR1 (RTT,nom) and MR2 (RTT(WR)). TDQS is disabled in MR1. External DQ/DQS/DM load resistor is 25 to V DDQ/2. Burst lengths are BL8 fixed. AL equals 0 (except in IDD7). IDD specifications are tested after the device is properly initialized. Input slew rate is specified by AC parametric test conditions. Optional ASR is disabled. Read burst type uses nibble sequential (MR0[3] = 0). Loop patterns must be executed at least once before current measurements begin. Table 8: Timing Parameters Used for IDD Measurements - Clock Units DDR3-800 IDD Parameter tCK DDR3-1066 DDR3-1333 -25 -187E -187 -15E 5-5-5 6-6-6 7-7-7 8-8-8 9-9-9 10-10-10 10-10-10 11-11-11 (MIN) IDD 2.5 1.875 -15 DDR3-1600 -25E -125E 1.5 -125 1.25 DDR3-1866 DDR3-2133 -107 -093 13-13-13 14-14-14 Unit 1.071 0.938 ns CL IDD 5 6 7 8 9 10 10 11 13 14 CK tRCD 5 6 7 8 9 10 10 11 13 14 CK 20 21 27 28 33 34 38 39 45 50 CK 15 15 20 20 24 24 28 28 32 36 CK tRC (MIN) IDD tRAS tRP (MIN) IDD (MIN) IDD (MIN) tFAW tRRD 5 6 7 8 9 10 10 11 13 14 CK x4, x8 16 16 20 20 20 20 24 24 26 27 CK x16 20 20 27 27 30 30 32 32 33 38 CK x4, x8 4 4 4 4 4 4 5 5 5 6 CK IDD x16 4 4 6 6 5 5 6 6 6 7 CK tRFC 1Gb 44 44 59 59 74 74 88 88 103 118 CK 2Gb 64 64 86 86 107 107 128 128 150 172 CK 4Gb 104 104 139 139 174 174 208 208 243 279 CK 8Gb 140 140 187 187 234 234 280 280 328 375 CK PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 31 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions 0 0 - 0 0 0 - 2 D 1 0 0 0 0 0 0 0 0 0 0 - 3 D# 1 1 1 1 0 0 0 0 0 0 0 - 4 D# 1 1 1 1 0 0 0 0 0 0 0 - Data 0 0 A[2:0] 0 0 A[6:3] 0 0 A[9:7] 0 0 A[10] 0 0 A[15:11] 1 0 BA[2:0] 1 0 ODT 0 1 WE# 0 D CAS# ACT 1 RAS# Command 0 CS# Cycle Number SubLoop CKE CK, CK# Table 9: IDD0 Measurement Loop Repeat cycles 1 through 4 until nRAS - 1; truncate if needed nRAS Static HIGH 0 0 1 0 0 0 0 0 0 0 0 - Repeat cycles 1 through 4 until nRC - 1; truncate if needed 0 Toggling PRE nRC ACT 0 0 1 1 0 0 0 0 0 F 0 - nRC + 1 D 1 0 0 0 0 0 0 0 0 F 0 - nRC + 2 D 1 0 0 0 0 0 0 0 0 F 0 - nRC + 3 D# 1 1 1 1 0 0 0 0 0 F 0 - D# 1 1 1 1 0 0 0 0 0 F 0 - nRC + 4 Repeat cycles nRC + 1 through nRC + 4 until nRC - 1 + nRAS -1; truncate if needed nRC + nRAS PRE 0 0 1 0 0 0 0 0 0 F 0 - Repeat cycles nRC + 1 through nRC + 4 until 2 x RC - 1; truncate if needed 1 2 x nRC Repeat sub-loop 0, use BA[2:0] = 1 2 4 x nRC Repeat sub-loop 0, use BA[2:0] = 2 3 6 x nRC Repeat sub-loop 0, use BA[2:0] = 3 4 8 x nRC Repeat sub-loop 0, use BA[2:0] = 4 5 10 x nRC Repeat sub-loop 0, use BA[2:0] = 5 6 12 x nRC Repeat sub-loop 0, use BA[2:0] = 6 7 14 x nRC Repeat sub-loop 0, use BA[2:0] = 7 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. DQ, DQS, DQS# are midlevel. 2. DM is LOW. 3. Only selected bank (single) active. 32 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions 0 0 0 - 0 0 0 0 - 2 D 1 0 0 0 0 0 0 0 0 0 0 - 3 D# 1 1 1 1 0 0 0 0 0 0 0 - 4 D# 1 1 1 1 0 0 0 0 0 0 0 - Data2 A[2:0] 0 0 A[6:3] 0 0 A[9:7] 0 0 A[10] 0 0 A[15:11] 1 0 BA[2:0] 1 0 ODT 0 1 WE# 0 D CAS# ACT 1 RAS# Command 0 CS# Cycle Number Sub-Loop CKE CK, CK# Table 10: IDD1 Measurement Loop Repeat cycles 1 through 4 until nRCD - 1; truncate if needed nRCD RD 0 1 0 1 0 0 0 0 0 0 0 00000000 Repeat cycles 1 through 4 until nRAS - 1; truncate if needed nRAS Static HIGH 0 0 1 0 0 0 0 0 0 0 0 - Repeat cycles 1 through 4 until nRC - 1; truncate if needed 0 Toggling PRE nRC ACT 0 0 1 1 0 0 0 0 0 F 0 - nRC + 1 D 1 0 0 0 0 0 0 0 0 F 0 - nRC + 2 D 1 0 0 0 0 0 0 0 0 F 0 - nRC + 3 D# 1 1 1 1 0 0 0 0 0 F 0 - nRC + 4 D# 1 1 1 1 0 0 0 0 0 F 0 - Repeat cycles nRC + 1 through nRC + 4 until nRC + nRCD - 1; truncate if needed nRC + nRCD RD 0 1 0 1 0 0 0 0 0 F 0 00110011 Repeat cycles nRC + 1 through nRC + 4 until nRC + nRAS - 1; truncate if needed nRC + nRAS PRE 0 0 1 0 0 0 0 0 0 F 0 - Repeat cycle nRC + 1 through nRC + 4 until 2 x nRC - 1; truncate if needed 1 2 x nRC Repeat sub-loop 0, use BA[2:0] = 1 2 4 x nRC Repeat sub-loop 0, use BA[2:0] = 2 3 6 x nRC Repeat sub-loop 0, use BA[2:0] = 3 4 8 x nRC Repeat sub-loop 0, use BA[2:0] = 4 5 10 x nRC Repeat sub-loop 0, use BA[2:0] = 5 6 12 x nRC Repeat sub-loop 0, use BA[2:0] = 6 7 14 x nRC Repeat sub-loop 0, use BA[2:0] = 7 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. 2. 3. 4. DQ, DQS, DQS# are midlevel unless driven as required by the RD command. DM is LOW. Burst sequence is driven on each DQ signal by the RD command. Only selected bank (single) active. 33 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions Table 11: IDD Measurement Conditions for Power-Down Currents Name IDD2P0 Precharge Power-Down Current (Slow Exit)1 IDD2P1 Precharge Power-Down Current (Fast Exit)1 IDD2Q Precharge Quiet Standby Current IDD3P Active Power-Down Current N/A N/A N/A N/A Timing pattern CKE External clock tCK LOW LOW HIGH LOW Toggling Toggling Toggling Toggling tCK tRC (MIN) IDD N/A tCK (MIN) IDD N/A tCK (MIN) IDD N/A tCK (MIN) IDD N/A tRAS N/A N/A N/A N/A tRCD N/A N/A N/A N/A tRRD N/A N/A N/A N/A tRC N/A N/A N/A N/A CL N/A N/A N/A N/A AL N/A N/A N/A N/A CS# HIGH HIGH HIGH HIGH Command inputs LOW LOW LOW LOW Row/column addr LOW LOW LOW LOW Bank addresses LOW LOW LOW LOW DM LOW LOW LOW LOW Midlevel Midlevel Midlevel Midlevel Data I/O Output buffer DQ, DQS Enabled Enabled Enabled Enabled Enabled, off Enabled, off Enabled, off Enabled, off Burst length 8 8 8 8 Active banks None None None All ODT2 Idle banks All All All None Special notes N/A N/A N/A N/A Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. MR0[12] defines DLL on/off behavior during precharge power-down only; DLL on (fast exit, MR0[12] = 1) and DLL off (slow exit, MR0[12] = 0). 2. "Enabled, off" means the MR bits are enabled, but the signal is LOW. 34 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions Cycle Number Command CS# RAS# CAS# WE# ODT BA[2:0] A[15:11] A[10] A[9:7] A[6:3] A[2:0] Data Sub-Loop CKE CK, CK# Table 12: IDD2N and IDD3N Measurement Loop 0 D 1 0 0 0 0 0 0 0 0 0 0 - 1 D 1 0 0 0 0 0 0 0 0 0 0 - 2 D# 1 1 1 1 0 0 0 0 0 F 0 - 3 D# 1 1 1 1 0 0 0 0 0 F 0 - Static HIGH Toggling 0 1 4-7 Repeat sub-loop 0, use BA[2:0] = 1 2 8-11 Repeat sub-loop 0, use BA[2:0] = 2 3 12-15 Repeat sub-loop 0, use BA[2:0] = 3 4 16-19 Repeat sub-loop 0, use BA[2:0] = 4 5 20-23 Repeat sub-loop 0, use BA[2:0] = 5 6 24-27 Repeat sub-loop 0, use BA[2:0] = 6 7 28-31 Repeat sub-loop 0, use BA[2:0] = 7 Notes: 1. DQ, DQS, DQS# are midlevel. 2. DM is LOW. 3. All banks closed during IDD2N; all banks open during IDD3N. Cycle Number Command CS# RAS# CAS# WE# ODT BA[2:0] A[15:11] A[10] A[9:7] A[6:3] A[2:0] Data Sub-Loop CKE CK, CK# Table 13: IDD2NT Measurement Loop 0 D 1 0 0 0 0 0 0 0 0 0 0 - 1 D 1 0 0 0 0 0 0 0 0 0 0 - 2 D# 1 1 1 1 0 0 0 0 0 F 0 - 3 D# 1 1 1 1 0 0 0 0 0 F 0 - Static HIGH Toggling 0 1 4-7 Repeat sub-loop 0, use BA[2:0] = 1; ODT = 0 2 8-11 Repeat sub-loop 0, use BA[2:0] = 2; ODT = 1 3 12-15 Repeat sub-loop 0, use BA[2:0] = 3; ODT = 1 4 16-19 Repeat sub-loop 0, use BA[2:0] = 4; ODT = 0 5 20-23 Repeat sub-loop 0, use BA[2:0] = 5; ODT = 0 6 24-27 Repeat sub-loop 0, use BA[2:0] = 6; ODT = 1 7 28-31 Repeat sub-loop 0, use BA[2:0] = 7; ODT = 1 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. DQ, DQS, DQS# are midlevel. 2. DM is LOW. 3. All banks closed. 35 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions A[2:0] Data3 0 0 0 0 0 0 0 00000000 0 0 0 0 0 0 0 0 - 2 D# 1 1 1 1 0 0 0 0 0 0 0 - 3 D# 1 1 1 1 0 0 0 0 0 0 0 - 4 RD 0 1 0 1 0 0 0 0 0 F 0 00110011 5 D 1 0 0 0 0 0 0 0 0 F 0 - 6 D# 1 1 1 1 0 0 0 0 0 F 0 - 7 D# 1 1 1 1 0 0 0 0 0 F 0 - Static HIGH Toggling 0 1 8-15 Repeat sub-loop 0, use BA[2:0] = 1 2 16-23 Repeat sub-loop 0, use BA[2:0] = 2 3 24-31 Repeat sub-loop 0, use BA[2:0] = 3 4 32-39 Repeat sub-loop 0, use BA[2:0] = 4 5 40-47 Repeat sub-loop 0, use BA[2:0] = 5 6 48-55 Repeat sub-loop 0, use BA[2:0] = 6 7 56-63 Repeat sub-loop 0, use BA[2:0] = 7 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. 2. 3. 4. A[6:3] 1 0 A[9:7] 0 0 A[10] CAS# 1 1 A[15:11] RAS# 0 D BA[2:0] CS# RD 1 ODT Command 0 WE# Cycle Number Sub-Loop CKE CK, CK# Table 14: IDD4R Measurement Loop DQ, DQS, DQS# are midlevel when not driving in burst sequence. DM is LOW. Burst sequence is driven on each DQ signal by the RD command. All banks open. 36 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions A[2:0] Data3 1 0 0 0 0 0 0 00000000 0 1 0 0 0 0 0 0 - 2 D# 1 1 1 1 1 0 0 0 0 0 0 - 3 D# 1 1 1 1 1 0 0 0 0 0 0 - 4 WR 0 1 0 0 1 0 0 0 0 F 0 00110011 5 D 1 0 0 0 1 0 0 0 0 F 0 - 6 D# 1 1 1 1 1 0 0 0 0 F 0 - 7 D# 1 1 1 1 1 0 0 0 0 F 0 - Static HIGH Toggling 0 1 8-15 Repeat sub-loop 0, use BA[2:0] = 1 2 16-23 Repeat sub-loop 0, use BA[2:0] = 2 3 24-31 Repeat sub-loop 0, use BA[2:0] = 3 4 32-39 Repeat sub-loop 0, use BA[2:0] = 4 5 40-47 Repeat sub-loop 0, use BA[2:0] = 5 6 48-55 Repeat sub-loop 0, use BA[2:0] = 6 7 56-63 Repeat sub-loop 0, use BA[2:0] = 7 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. 2. 3. 4. A[6:3] 0 0 A[9:7] 0 0 A[10] CAS# 1 1 A[15:11] RAS# 0 D BA[2:0] CS# WR 1 ODT Command 0 WE# Cycle Number Sub-Loop CKE CK, CK# Table 15: IDD4W Measurement Loop DQ, DQS, DQS# are midlevel when not driving in burst sequence. DM is LOW. Burst sequence is driven on each DQ signal by the WR command. All banks open. 37 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions 0 0 0 - 0 0 0 0 - 2 D 1 0 0 0 0 0 0 0 0 0 0 - 3 D# 1 1 1 1 0 0 0 0 0 F 0 - 4 D# 1 1 1 1 0 0 0 0 0 F 0 - Static HIGH Toggling 1a 1b 5-8 Repeat sub-loop 1a, use BA[2:0] = 1 1c 9-12 Repeat sub-loop 1a, use BA[2:0] = 2 1d 13-16 Repeat sub-loop 1a, use BA[2:0] = 3 1e 17-20 Repeat sub-loop 1a, use BA[2:0] = 4 1f 21-24 Repeat sub-loop 1a, use BA[2:0] = 5 1g 25-28 Repeat sub-loop 1a, use BA[2:0] = 6 1h 29-32 Repeat sub-loop 1a, use BA[2:0] = 7 2 33-nRFC - 1 Repeat sub-loop 1a through 1h until nRFC - 1; truncate if needed Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Data 0 0 A[2:0] 0 0 A[6:3] 0 0 A[9:7] 0 0 A[10] 1 0 A[15:11] 0 0 BA[2:0] 0 1 ODT 0 D WE# REF 1 CAS# Command 0 RAS# Cycle Number 0 CS# Sub-Loop CKE CK, CK# Table 16: IDD5B Measurement Loop 1. DQ, DQS, DQS# are midlevel. 2. DM is LOW. 38 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions Table 17: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 IDD Test CKE External clock IDD6: Self Refresh Current Normal Temperature Range TC = 0C to +85C IDD6ET: Self Refresh Current Extended Temperature Range TC = 0C to +95C IDD8: Reset2 LOW LOW Midlevel Off, CK and CK# = LOW Off, CK and CK# = LOW Midlevel tCK N/A N/A N/A tRC N/A N/A N/A tRAS N/A N/A N/A tRCD N/A N/A N/A tRRD N/A N/A N/A tRC N/A N/A N/A CL N/A N/A N/A AL N/A N/A N/A CS# Midlevel Midlevel Midlevel Command inputs Midlevel Midlevel Midlevel Row/column addresses Midlevel Midlevel Midlevel Bank addresses Midlevel Midlevel Midlevel Data I/O Midlevel Midlevel Midlevel Output buffer DQ, DQS Enabled Enabled Midlevel Enabled, midlevel Enabled, midlevel Midlevel Burst length N/A N/A N/A Active banks N/A N/A None Idle banks N/A N/A All SRT Disabled (normal) Enabled (extended) N/A ASR Disabled Disabled N/A ODT1 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. "Enabled, midlevel" means the MR command is enabled, but the signal is midlevel. 2. During a cold boot RESET (initialization), current reading is valid after power is stable and RESET has been LOW for 1ms; During a warm boot RESET (while operating), current reading is valid after RESET has been LOW for 200ns + tRFC. 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions Command CS# RAS# CAS# WE# ODT BA[2:0] A[15:11] A[10] A[9:7] A[6:3] A[2:0] Data3 0 Cycle Number Sub-Loop CKE CK, CK# Table 18: IDD7 Measurement Loop 0 ACT 0 0 1 1 0 0 0 0 0 0 0 - 1 RDA 0 1 0 1 0 0 0 1 0 0 0 00000000 2 D 1 0 0 0 0 0 0 0 0 0 0 - 3 1 Static HIGH nRRD ACT 0 0 1 1 0 1 0 0 0 F 0 - nRRD + 1 RDA 0 1 0 1 0 1 0 1 0 F 0 00110011 nRRD + 2 D 1 0 0 0 0 1 0 0 0 F 0 - 0 - nRRD + 3 Repeat cycle nRRD + 2 until 2 x nRRD - 1 2 2 x nRRD Repeat sub-loop 0, use BA[2:0] = 2 3 3 x nRRD Repeat sub-loop 1, use BA[2:0] = 3 4 x nRRD 4 Toggling Repeat cycle 2 until nRRD - 1 D 1 0 0 0 0 3 0 0 0 F 4 x nRRD + 1 Repeat cycle 4 x nRRD until nFAW - 1, if needed 5 nFAW Repeat sub-loop 0, use BA[2:0] = 4 6 nFAW + nRRD Repeat sub-loop 1, use BA[2:0] = 5 7 nFAW + 2 x nRRD Repeat sub-loop 0, use BA[2:0] = 6 8 nFAW + 3 x nRRD Repeat sub-loop 1, use BA[2:0] = 7 9 nFAW + 4 x nRRD D 1 nFAW + 4 x nRRD + 1 10 0 0 0 7 0 0 0 F 0 - Repeat cycle nFAW + 4 x nRRD until 2 x nFAW - 1, if needed 2 x nFAW ACT 0 0 1 1 0 0 0 0 0 F 0 - 2 x nFAW + 1 RDA 0 1 0 1 0 0 0 1 0 F 0 00110011 2 x nFAW + 2 D 1 0 0 0 0 0 0 0 0 F 0 - 2 x nFAW + 3 11 0 Repeat cycle 2 x nFAW + 2 until 2 x nFAW + nRRD - 1 2 x nFAW + nRRD ACT 0 0 1 1 0 1 0 0 0 0 0 - 2 x nFAW + nRRD + 1 RDA 0 1 0 1 0 1 0 1 0 0 0 00000000 2 x nFAW + nRRD + 2 D 1 0 0 0 0 1 0 0 0 0 0 - 2 x nFAW + nRRD + 3 Repeat cycle 2 x nFAW + nRRD + 2 until 2 x nFAW + 2 x nRRD - 1 12 2 x nFAW + 2 x nRRD Repeat sub-loop 10, use BA[2:0] = 2 13 2 x nFAW + 3 x nRRD Repeat sub-loop 11, use BA[2:0] = 3 14 2 x nFAW + 4 x nRRD D 1 0 0 0 0 3 0 0 0 0 0 2 x nFAW + 4 x nRRD + 1 Repeat cycle 2 x nFAW + 4 x nRRD until 3 x nFAW - 1, if needed 3 x nFAW Repeat sub-loop 10, use BA[2:0] = 4 15 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 40 - Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - IDD Specifications and Conditions 3 x nFAW + 4 x nRRD + 1 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. 2. 3. 4. A[6:3] A[9:7] A[10] Data3 19 3 x nFAW + 3 x nRRD 3 x nFAW + 4 x nRRD A[2:0] 18 A[15:11] Repeat sub-loop 10, use BA[2:0] = 6 BA[2:0] 3 x nFAW + 2 x nRRD ODT 17 WE# Repeat sub-loop 11, use BA[2:0] = 5 CAS# 3 x nFAW + nRRD RAS# 16 CS# Cycle Number Command Sub-Loop CKE Static HIGH Toggling CK, CK# Table 18: IDD7 Measurement Loop (Continued) 0 - Repeat sub-loop 11, use BA[2:0] = 7 D 1 0 0 0 0 7 0 0 0 0 Repeat cycle 3 x nFAW + 4 x nRRD until 4 x nFAW - 1, if needed DQ, DQS, DQS# are midlevel unless driven as required by the RD command. DM is LOW. Burst sequence is driven on each DQ signal by the RD command. AL = CL-1. 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics - IDD Specifications Electrical Characteristics - IDD Specifications IDD values are for full operating range of voltage and temperature unless otherwise noted. Table 19: IDD Maximum Limits - Die Rev D Speed Bin Parameter Symbol Width DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Units Notes Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 x4, x8 60 65 75 85 mA 1, 2 x16 75 80 90 100 mA 1, 2 Operating current 1: One bank ACTIVATE-to-READto-PRECHARGE IDD1 x4 70 75 80 85 mA 1, 2 x8 77 82 87 92 mA 1, 2 x16 105 110 115 120 mA 1, 2 Precharge power-down current: Slow exit IDD2P0 All 20 20 20 20 mA 1, 2 Precharge power-down current: Fast exit IDD2P1 All 30 32 37 42 mA 1, 2 Precharge quiet standby current IDD2Q All 39 44 47 52 mA 1, 2 Precharge standby current IDD2N All 42 45 50 55 mA 1, 2 Precharge standby ODT current IDD2NT x4, x8 40 45 50 55 mA 1, 2 x16 45 50 55 60 mA 1, 2 Active power-down current IDD3P All 53 58 63 68 mA 1, 2 Active standby current IDD3N x4, x8 52 57 62 67 mA 1, 2 x16 68 73 77 82 mA 1, 2 x4 135 155 175 195 mA 1, 2 Burst read operating current IDD4R x8 147 167 187 207 mA 1, 2 x16 220 240 280 300 mA 1, 2 x4 115 135 155 175 mA 1, 2 x8 125 145 165 185 mA 1, 2 Burst write operating current IDD4W x16 180 200 225 250 mA 1, 2 Burst refresh current IDD5B All 205 210 220 230 mA 1, 2 Room temperature self refresh IDD6 All 22 22 22 22 mA 1, 2, 3 Extended temperature self refresh IDD6ET All 28 28 28 28 mA 2, 4 All banks interleaved read current IDD7 x4, x8 210 250 290 330 mA 1, 2 x16 260 285 320 360 mA 1, 2 Reset current IDD8 All IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA mA 1, 2 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. TC = 85C; SRT and ASR are disabled. 2. Enabling ASR could increase IDDx by up to an additional 2mA. 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics - IDD Specifications 3. Restricted to TC (MAX) = 85C. 4. TC = 85C; ASR and ODT are disabled; SRT is enabled. 5. The IDD values must be derated (increased) on IT-option devices when operated outside of the range 0C TC +85C: 5a. When TC < 0C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%. 5b. When TC > 85C: IDD4R, IDD4W, IDD5B, and IDD7 must be derated by 5%; IDD0, IDD1, IDD2P1, IDD3N, and IDD3P must be derated by 15%; IDD2P0, IDD2Q, IDD2N, and IDD2NT must be derated by 40%. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics - IDD Specifications Table 20: IDD Maximum Limits Die Rev E, J DDR3 Speed Bin Parameter Symbol Width Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 x4, x8 44 47 55 62 70 mA 1, 2 x16 55 58 66 73 82 mA 1, 2 Operating current 1: One bank ACTIVATE-to-READ-toPRECHARGE IDD1 x4 53 57 61 65 70 mA 1, 2 x8 59 62 66 70 75 mA 1, 2 x16 80 84 87 91 96 mA 1, 2 Precharge power-down current: Slow exit IDD2P0 All 18 18 18 18 18 mA 1, 2 Precharge power-down current: Fast exit IDD2P1 All 26 28 32 37 43 mA 1, 2 Precharge quiet standby current IDD2Q All 27 28 32 35 37 mA 1, 2 Precharge standby current IDD2N All 28 29 32 35 37 mA 1, 2 Precharge standby ODT current IDD2NT x4, x8 32 35 39 42 45 mA 1, 2 x16 35 39 42 45 49 mA 1, 2 Active power-down current IDD3P All 32 35 38 41 44 mA 1, 2 Active standby current IDD3N x4, x8 32 35 38 41 44 mA 1, 2 Burst read operating current IDD4R Burst write operating current IDD4W 1066 1333 1600 1866 2133 Units Notes x16 41 45 47 49 52 mA 1, 2 x4 113 130 147 164 181 mA 1, 2 x8 123 140 157 174 191 mA 1, 2 x16 185 202 235 252 285 mA 1, 2 x4 87 103 118 133 148 mA 1, 2 x8 95 110 125 141 157 mA 1, 2 x16 137 152 171 190 200 mA 1, 2 Burst refresh current IDD5B All 224 228 235 242 250 mA 1, 2 Room temperature self refresh IDD6 All 20 20 20 20 20 mA 1, 2, 3 Extended temperature self refresh IDD6ET All 25 25 25 25 25 mA 2, 4 All banks interleaved read current IDD7 x4, x8 160 190 220 251 282 mA 1, 2 x16 198 217 243 274 305 mA 1, 2 Reset current IDD8 All IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA mA 1, 2 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. 2. 3. 4. 5. TC = 85C; SRT and ASR are disabled. Enabling ASR could increase IDDx by up to an additional 2mA. Restricted to TC (MAX) = 85C. TC = 85C; ASR and ODT are disabled; SRT is enabled. The IDD values must be derated (increased) on IT-option devices when operated outside of the range 0C TC +85C: 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics - IDD Specifications 5a. When TC < 0C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%. 5b. When TC > 85C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC Electrical Specifications - DC and AC DC Operating Conditions Table 21: DC Electrical Characteristics and Operating Conditions All voltages are referenced to VSS Parameter/Condition Symbol Min Nom Max Unit Notes Supply voltage VDD 1.425 1.5 1.575 V 1, 2 I/O supply voltage VDDQ 1.425 1.5 1.575 V 1, 2 II -2 - 2 A IVREF -1 - 1 A Input leakage current Any input 0V VIN VDD, VREF pin 0V VIN 1.1V (All other pins not under test = 0V) VREF supply leakage current VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) Notes: 4 1. VDD and VDDQ must track one another. VDDQ must be VDD. VSS = VSSQ. 2. VDD and VDDQ may include AC noise of 50mV (250 kHz to 20 MHz) in addition to the DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC timing parameters. 3. VREF (see Table 22). 4. The minimum limit requirement is for testing purposes. The leakage current on the VREF pin should be minimal. Input Operating Conditions Table 22: DC Electrical Characteristics and Input Conditions All voltages are referenced to VSS Parameter/Condition VIN low; DC/commands/address busses VIN high; DC/commands/address busses Symbol Min Nom Max Unit VIL VSS n/a See Table 23 V Notes VIH See Table 23 n/a VDD V Input reference voltage command/address bus VREFCA(DC) 0.49 x VDD 0.5 x VDD 0.51 x VDD V 1, 2 I/O reference voltage DQ bus VREFDQ(DC) 0.49 x VDD 0.5 x VDD 0.51 x VDD V 2, 3 I/O reference voltage DQ bus in SELF REFRESH VREFDQ(SR) VSS 0.5 x VDD VDD V 4 VTT - 0.5 x VDDQ - V 5 Command/address termination voltage (system level, not direct DRAM input) Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. VREFCA(DC) is expected to be approximately 0.5 x VDD and to track variations in the DC level. Externally generated peak noise (noncommon mode) on VREFCA may not exceed 1% x VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not exceed 2% of VREFCA(DC). 2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifications if the DRAM induces additional AC noise greater than 20 MHz in frequency. 3. VREFDQ(DC) is expected to be approximately 0.5 x VDD and to track variations in the DC level. Externally generated peak noise (noncommon mode) on VREFDQ may not exceed 1% x VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not exceed 2% of VREFDQ(DC). 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC 4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH, within restrictions outlined in the SELF REFRESH section. 5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors. Minimum and maximum values are system-dependent. Table 23: Input Switching Conditions Parameter/Condition DDR3-800 DDR3-1066 Symbol DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133 Unit - mV Command and Address Input high AC voltage: Logic 1 @ 175mV VIH(AC175)min 175 175 Input high AC voltage: Logic 1 @ 150mV VIH(AC150)min 150 150 - mV Input high AC voltage: Logic 1 @ 135 mV VIH(AC135)min - - 135 mV Input high AC voltage: Logic 1 @ 125 mV VIH(AC125)min - - 125 mV Input high DC voltage: Logic 1 @ 100 mV VIH(DC100)min 100 100 100 mV Input low DC voltage: Logic 0 @ -100mV VIL(DC100)max -100 -100 -100 mV Input low AC voltage: Logic 0 @ -125mV VIL(AC125)max - - -125 mV Input low AC voltage: Logic 0 @ -135mV VIL(AC135)max - - -135 mV Input low AC voltage: Logic 0 @ -150mV VIL(AC150)max -150 -150 - mV Input low AC voltage: Logic 0 @ -175mV VIL(AC175)max -175 -175 - mV DQ and DM Input high AC voltage: Logic 1 VIH(AC175)min 175 - - mV Input high AC voltage: Logic 1 VIH(AC150)min 150 150 - mV Input high AC voltage: Logic 1 VIH(AC135)min - - 135 mV Input high DC voltage: Logic 1 VIH(DC100)min 100 100 100 mV Input low DC voltage: Logic 0 VIL(DC100)max -100 -100 -100 mV Input low AC voltage: Logic 0 VIL(AC135)max - - -135 mV Input low AC voltage: Logic 0 VIL(AC150)max -150 -150 - mV Input low AC voltage: Logic 0 VIL(AC175)max -175 - - mV Notes: 1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ and DM inputs. 2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC). 3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC). 4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is 900mV (peak-to-peak). 5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific speed bin, the user may choose either value for the input AC level. Whichever value is used, the associated setup time for that AC level must also be used. Additionally, one VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may be used for data inputs. For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/ command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC Figure 13: Input Signal VIL and VIH levels with ringback 1.90V VDDQ + 0.4V narrow pulse width 1.50V VDDQ Minimum VIL and VIH levels 0.925V 0.850V VIH(AC) VIH(DC) 0.575V VIH(AC) 0.850V VIH(DC) 0.780V 0.765V 0.750V 0.735V 0.720V 0.780V 0.765V 0.750V 0.735V 0.720V 0.650V 0.925V VIL(DC) VIL(AC) VREF + AC noise VREF + DC error VREF - DC error VREF - AC noise 0.650V VIL(DC) 0.575V VIL(AC) 0.0V VSS VSS - 0.4V narrow pulse width -0.40V Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. Numbers in diagrams reflect nominal values. 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC AC Overshoot/Undershoot Specification Table 24: Control and Address Pins Parameter DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133 Maximum peak amplitude allowed for overshoot area (see Figure 14) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum peak amplitude allowed for undershoot area (see Figure 15) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum overshoot area above VDD (see Figure 14) 0.67 Vns 0.5 Vns 0.4 Vns 0.33 Vns 0.28 Vns 0.25 Vns Maximum undershoot area below VSS (see Figure 15) 0.67 Vns 0.5 Vns 0.4 Vns 0.33 Vns 0.28 Vns 0.25 Vns Table 25: Clock, Data, Strobe, and Mask Pins Parameter DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133 Maximum peak amplitude allowed for overshoot area (see Figure 14) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum peak amplitude allowed for undershoot area (see Figure 15) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum overshoot area above VDD/VDDQ (see Figure 14) 0.25 Vns 0.19 Vns 0.15 Vns 0.13 Vns 0.11 Vns 0.10 Vns Maximum undershoot area below VSS/VSSQ (see Figure 15) 0.25 Vns 0.19 Vns 0.15 Vns 0.13 Vns 0.11 Vns 0.10 Vns Figure 14: Overshoot Maximum amplitude Overshoot area Volts (V) VDD/VDDQ Time (ns) Figure 15: Undershoot VSS/VSSQ Volts (V) Undershoot area Maximum amplitude Time (ns) PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC Table 26: Differential Input Operating Conditions (CK, CK# and DQS, DQS#) Parameter/Condition Differential input voltage logic high - slew Symbol Min Max Unit Notes VIH,diff 200 n/a mV 4 VIL,diff n/a -200 mV 4 Differential input voltage logic high VIH,diff(AC) 2 x (VIH(AC) - VREF) VDD/VDDQ mV 5 Differential input voltage logic low VIL,diff(AC) VSS/VSSQ 2 x (VIL(AC)-VREF) mV 6 Differential input crossing voltage relative to VDD/2 for DQS, DQS#; CK, CK# VIX VREF(DC) - 150 VREF(DC) + 150 mV 4, 7 Differential input crossing voltage relative to VDD/2 for CK, CK# VIX (175) VREF(DC) - 175 VREF(DC) + 175 mV 4, 7, 8 VSEH VDDQ/2 + 175 VDDQ mV 5 VDD/2 + 175 VDD mV 5 VSSQ VDDQ/2 - 175 mV 6 VSS VDD/2 - 175 mV 6 Differential input voltage logic low - slew Single-ended high level for strobes Single-ended high level for CK, CK# Single-ended low level for strobes VSEL Single-ended low level for CK, CK# Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ. Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe. Differential input slew rate = 2 V/ns Defines slew rate reference points, relative to input crossing voltages. Minimum DC limit is relative to single-ended signals; overshoot specifications are applicable. Maximum DC limit is relative to single-ended signals; undershoot specifications are applicable. The typical value of VIX(AC) is expected to be about 0.5 x VDD of the transmitting device, and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which differential input signals must cross. The VIX extended range (175mV) is allowed only for the clock; this VIX extended range is only allowed when the following conditions are met: The single-ended input signals are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 250mV, and the differential slew rate of CK, CK# is greater than 3 V/ns. VIX must provide 25mV (single-ended) of the voltages separation. 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC Figure 16: VIX for Differential Signals VDD, VDDQ VDD, VDDQ CK#, DQS# CK#, DQS# X VIX VIX VDD/2, VDDQ/2 X X VDD/2, VDDQ/2 VIX X VIX CK, DQS CK, DQS VSS, VSSQ VSS, VSSQ Figure 17: Single-Ended Requirements for Differential Signals VDD or VDDQ VSEH,min VDD/2 or VDDQ/2 VSEH CK or DQS VSEL,max VSEL VSS or VSSQ PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC Figure 18: Definition of Differential AC-Swing and tDVAC tDVAC VIH,diff(AC)min VIH,diff,min CK - CK# DQS - DQS# 0.0 VIL,diff,max VIL,diff(AC)max tDVAC Half cycle Table 27: Allowed Time Before Ringback (tDVAC) for CK - CK# and DQS DQS# tDVAC Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN (ps) at |VIH,diff(AC) to VIL,diff(AC)| Slew Rate (V/ns) 350mV 300mV >4.0 75 175 4.0 57 170 3.0 50 167 2.0 38 163 1.9 34 162 1.6 29 161 1.4 22 159 1.2 13 155 1.0 0 150 <1.0 0 150 1. Below VIL(AC) 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC Slew Rate Definitions for Single-Ended Input Signals Setup (tIS and tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V REF and the first crossing of V IH(AC)min. Setup (tIS and tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V REF and the first crossing of V IL(AC)max. Hold (tIH and tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V IL(DC)max and the first crossing of V REF. Hold (tIH and tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min and the first crossing of V REF (see Figure 19 (page 54)). Table 28: Single-Ended Input Slew Rate Definition Input Slew Rates (Linear Signals) Measured Input Edge From To Calculation Setup Rising VREF VIH(AC)min VIH(AC)min - VREF TRSse Falling VREF VIL(AC)max VREF - VIL(AC)max TFSse Hold Rising VIL(DC)max VREF VREF - VIL(DC)max TFHse Falling VIH(DC)min VREF VIH(DC)min - VREF TRSHse PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC Figure 19: Nominal Slew Rate Definition for Single-Ended Input Signals TRSse Setup Single-ended input voltage (DQ, CMD, ADDR) VIH(AC)min VIH(DC)min VREFDQ or VREFCA VIL(DC)max VIL(AC)max TFSse TRHse Hold Single-ended input voltage (DQ, CMD, ADDR) VIH(AC)min VIH(DC)min VREFDQ or VREFCA VIL(DC)max VIL(AC)max TFHse PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications - DC and AC Slew Rate Definitions for Differential Input Signals Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and measured, as shown in Table 29 and Figure 20. The nominal slew rate for a rising signal is defined as the slew rate between V IL,diff,max and V IH,diff,min. The nominal slew rate for a falling signal is defined as the slew rate between V IH,diff,min and V IL,diff,max. Table 29: Differential Input Slew Rate Definition Differential Input Slew Rates (Linear Signals) Measured Input Edge From To Calculation CK and DQS reference Rising VIL,diff,max VIH,diff,min VIH,diff,min - VIL,diff,max TRdiff Falling VIH,diff,min VIL,diff,max VIH,diff,min - VIL,diff,max TFdiff Figure 20: Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# Differential input voltage (DQS, DQS#; CK, CK#) TRdiff VIH,diff,min 0 VIL,diff,max TFdiff PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics ODT Characteristics The ODT effective resistance RTT is defined by MR1[9, 6, and 2]. ODT is applied to the DQ, DM, DQS, DQS#, and TDQS, TDQS# balls (x8 devices only). The ODT target values and a functional representation are listed in Table 30 and Table 31 (page 57). The individual pull-up and pull-down resistors (RTT(PU) and RTT(PD)) are defined as follows: * RTT(PU) = (VDDQ - VOUT)/|IOUT|, under the condition that RTT(PD) is turned off * RTT(PD) = (VOUT)/|IOUT|, under the condition that RTT(PU) is turned off Figure 21: ODT Levels and I-V Characteristics Chip in termination mode ODT VDDQ IPU IOUT = IPD - IPU RTT(PU) To other circuitry such as RCV, . . . DQ IOUT RTT(PD) VOUT IPD VSSQ Table 30: On-Die Termination DC Electrical Characteristics Parameter/Condition Symbol RTT effective impedance RTT(EFF) VM Deviation of VM with respect to VDDQ/2 Notes: Min Nom Max Unit See Table 31 (page 57) -5 5 Notes 1, 2 % 1, 2, 3 1. Tolerance limits are applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). Refer to ODT Sensitivity (page 58) if either the temperature or voltage changes after calibration. 2. Measurement definition for RTT: Apply VIH(AC) to pin under test and measure current I[VIH(AC)], then apply VIL(AC) to pin under test and measure current I[VIL(AC)]: VIH(AC) - VIL(AC) RTT = I(VIH(AC)) - I(VIL(AC)) 3. Measure voltage (VM) at the tested pin with no load: VM = 2 x VM - 1 x 100 VDDQ 4. For IT and AT devices, the minimum values are derated by 6% when the device operates between -40C and 0C (TC). PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 56 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics ODT Resistors Table 31 (page 57) provides an overview of the ODT DC electrical characteristics. The values provided are not specification requirements; however, they can be used as design guidelines to indicate what RTT is targeted to provide: * * * * * RTT is made up of RTT120(PD240) and RTT120(PU240) RTT is made up of RTT60(PD120) and RTT60(PU120) RTT is made up of RTT40(PD80) and RTT40(PU80) RTT is made up of RTT30(PD60) and RTT30(PU60) RTT is made up of RTT20(PD40) and RTT20(PU40) Table 31: RTT Effective Impedances MR1 [9, 6, 2] RTT Resistor VOUT Min Nom Max Unit 0, 1, 0 RTT120(PD240) 0.2 x VDDQ 0.6 1.0 1.1 RZQ/1 0.5 x VDDQ 0.9 1.0 1.1 RZQ/1 0.8 x VDDQ 0.9 1.0 1.4 RZQ/1 RTT120(PU240) 0, 0, 1 RTT60(PD120) RTT60(PU120) 0, 1, 1 RTT40(PD80) RTT40(PU80) 1, 0, 1 RTT30(PD60) RTT30(PU60) PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 0.2 x VDDQ 0.9 1.0 1.4 RZQ/1 0.5 x VDDQ 0.9 1.0 1.1 RZQ/1 0.8 x VDDQ 0.6 1.0 1.1 RZQ/1 VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/2 0.2 x VDDQ 0.6 1.0 1.1 RZQ/2 0.5 x VDDQ 0.9 1.0 1.1 RZQ/2 0.8 x VDDQ 0.9 1.0 1.4 RZQ/2 0.2 x VDDQ 0.9 1.0 1.4 RZQ/2 0.5 x VDDQ 0.9 1.0 1.1 RZQ/2 0.8 x VDDQ 0.6 1.0 1.1 RZQ/2 VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/4 0.2 x VDDQ 0.6 1.0 1.1 RZQ/3 0.5 x VDDQ 0.9 1.0 1.1 RZQ/3 0.8 x VDDQ 0.9 1.0 1.4 RZQ/3 0.2 x VDDQ 0.9 1.0 1.4 RZQ/3 0.5 x VDDQ 0.9 1.0 1.1 RZQ/3 0.8 x VDDQ 0.6 1.0 1.1 RZQ/3 VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/6 0.2 x VDDQ 0.6 1.0 1.1 RZQ/4 0.5 x VDDQ 0.9 1.0 1.1 RZQ/4 0.8 x VDDQ 0.9 1.0 1.4 RZQ/4 0.2 x VDDQ 0.9 1.0 1.4 RZQ/4 0.5 x VDDQ 0.9 1.0 1.1 RZQ/4 0.8 x VDDQ 0.6 1.0 1.1 RZQ/4 VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/8 57 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics Table 31: RTT Effective Impedances (Continued) MR1 [9, 6, 2] RTT Resistor VOUT Min Nom Max Unit 1, 0, 0 RTT20(PD40) 0.2 x VDDQ 0.6 1.0 1.1 RZQ/6 0.5 x VDDQ 0.9 1.0 1.1 RZQ/6 0.8 x VDDQ 0.9 1.0 1.4 RZQ/6 RTT20(PU40) Note: 0.2 x VDDQ 0.9 1.0 1.4 RZQ/6 0.5 x VDDQ 0.9 1.0 1.1 RZQ/6 0.8 x VDDQ 0.6 1.0 1.1 RZQ/6 VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/12 1. Values assume an RZQ of 240 r ODT Sensitivity If either the temperature or voltage changes after I/O calibration, then the tolerance limits listed in Table 30 (page 56) and Table 31 can be expected to widen according to Table 32 and Table 33 (page 58). Table 32: ODT Sensitivity Definition Symbol Min Max Unit RTT 0.9 - dRTTdT x |DT| - dRTTdV x |DV| 1.6 + dRTTdT x |DT| + dRTTdV x |DV| RZQ/(2, 4, 6, 8, 12) Note: 1. T = T - T(@ calibration), V = VDDQ - VDDQ(@ calibration) and VDD = VDDQ. Table 33: ODT Temperature and Voltage Sensitivity Note: Change Min Max Unit dRTTdT 0 1.5 %/C dRTTdV 0 0.15 %/mV 1. T = T - T(@ calibration), V = VDDQ - VDDQ(@ calibration) and VDD = VDDQ. ODT Timing Definitions ODT loading differs from that used in AC timing measurements. The reference load for ODT timings is shown in Figure 22. Two parameters define when ODT turns on or off synchronously, two define when ODT turns on or off asynchronously, and another defines when ODT turns on or off dynamically. Table 34 outlines and provides definition and measurement references settings for each parameter (see Table 35 (page 59)). ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance begins to turn off. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 58 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics Figure 22: ODT Timing Reference Load DUT CK, CK# VREF VDDQ/2 RTT = 25 DQ, DM DQS, DQS# TDQS, TDQS# ZQ VTT = VSSQ Timing reference point RZQ = 240 VSSQ Table 34: ODT Timing Definitions Symbol Begin Point Definition End Point Definition Figure tAON Rising edge of CK - CK# defined by the end point of ODTLon Extrapolated point at VSSQ Figure 23 (page 60) tAOF Rising edge of CK - CK# defined by the end point of ODTLoff Extrapolated point at VRTT,nom Figure 23 (page 60) tAONPD Rising edge of CK - CK# with ODT first being Extrapolated point at VSSQ registered HIGH Figure 24 (page 60) tAOFPD Rising edge of CK - CK# with ODT first being Extrapolated point at VRTT,nom registered LOW Figure 24 (page 60) Rising edge of CK - CK# defined by the end Extrapolated points at VRTT(WR) and point of ODTLcnw, ODTLcwn4, or ODTLcwn8 VRTT,nom Figure 25 (page 61) tADC Table 35: Reference Settings for ODT Timing Measurements Measured Parameter RTT,nom Setting RTT(WR) Setting VSW1 VSW2 tAON RZQ/4 (60 n/a 50mV 100mV RZQ/12 (20 n/a 100mV 200mV RZQ/4 (60 n/a 50mV 100mV RZQ/12 (20 n/a 100mV 200mV RZQ/4 (60 n/a 50mV 100mV RZQ/12 (20 n/a 100mV 200mV RZQ/4 (60 n/a 50mV 100mV RZQ/12 (20 n/a 100mV 200mV RZQ/12 (20 RZQ/2 (120 200mV 300mV tAOF tAONPD tAOFPD tADC Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. Assume an RZQ of 240 (1%) and that proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). 59 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics Figure 23: tAON and tAOF Definitions tAON tAOF Begin point: Rising edge of CK - CK# defined by the end point of ODTLoff Begin point: Rising edge of CK - CK# defined by the end point of ODTLon CK CK VDDQ/2 CK# CK# tAON tAOF End point: Extrapolated point at VRTT,nom TSW2 TSW1 TSW1 DQ, DM DQS, DQS# TDQS, TDQS# VSW2 TSW1 VSW2 VSW1 VSW1 VSSQ VRTT,nom VSSQ End point: Extrapolated point at VSSQ Figure 24: tAONPD and tAOFPD Definitions tAONPD tAOFPD Begin point: Rising edge of CK - CK# with ODT first registered low Begin point: Rising edge of CK - CK# with ODT first registered high CK CK VDDQ/2 CK# CK# tAONPD tAOFPD End point: Extrapolated point at VRTT,nom TSW2 TSW2 TSW1 DQ, DM DQS, DQS# TDQS, TDQS# TSW1 VSW2 VSSQ VRTT,nom VSW2 VSW1 VSW1 VSSQ End point: Extrapolated point at VSSQ PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 60 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM ODT Characteristics Figure 25: tADC Definition Begin point: Rising edge of CK - CK# defined by the end point of ODTLcnw Begin point: Rising edge of CK - CK# defined by the end point of ODTLcwn4 or ODTLcwn8 CK VDDQ/2 CK# tADC VRTT,nom DQ, DM DQS, DQS# TDQS, TDQS# End point: Extrapolated point at VRTT,nom tADC VRTT,nom TSW21 TSW11 VSW2 VSW1 TSW22 TSW12 VRTT(WR) End point: Extrapolated point at VRTT(WR) VSSQ PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 61 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance Output Driver Impedance The output driver impedance is selected by MR1[5,1] during initialization. The selected value is able to maintain the tight tolerances specified if proper ZQ calibration is performed. Output specifications refer to the default output driver unless specifically stated otherwise. A functional representation of the output buffer is shown below. The output driver impedance RON is defined by the value of the external reference resistor RZQ as follows: * RON,x = RZQ/y (with RZQ = 240 rx or 40 with y = 7 or 6, respectively) The individual pull-up and pull-down resistors RON(PU) and RON(PD) are defined as follows: * RON(PU) = (VDDQ - VOUT)/|IOUT|, when RON(PD) is turned off * RON(PD) = (VOUT)/|IOUT|, when RON(PU) is turned off Figure 26: Output Driver Chip in drive mode Output driver VDDQ IPU To other circuitry such as RCV, . . . RON(PU) DQ IOUT RON(PD) VOUT IPD VSSQ PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 62 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance 34 Ohm Output Driver Impedance The 34 driver (MR1[5, 1] = 01) is the default driver. Unless otherwise stated, all timings and specifications listed herein apply to the 34 driver only. Its impedance RON is defined by the value of the external reference resistor RZQ as follows: RON34 = RZQ/7 (with nominal RZQ = 240 1%) and is actually 34.3 r Table 36: 34 Ohm Driver Impedance Characteristics MR1[5,1] RON Resistor VOUT Min Nom Max Unit 0,1 RON34(PD) 0.2/VDDQ 0.6 1.0 1.1 RZQ/7 RON34(PU) Pull-up/pull-down mismatch (MMPUPD) Notes: 0.5/VDDQ 0.9 1.0 1.1 RZQ/7 0.8/VDDQ 0.9 1.0 1.4 RZQ/7 0.2/VDDQ 0.9 1.0 1.4 RZQ/7 0.5/VDDQ 0.9 1.0 1.1 RZQ/7 0.8/VDDQ 0.6 1.0 1.1 RZQ/7 0.5/VDDQ -10% n/a 10 % Notes 2 1. Tolerance limits assume RZQ of 240 1% and are applicable after proper ZQ calibration has been performed at a stable temperature and voltage: VDDQ = VDD; VSSQ = VSS). Refer to 34 Ohm Output Driver Sensitivity (page 65) if either the temperature or the voltage changes after calibration. 2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Measure both RON(PU) and RON(PD) at 0.5 x VDDQ: RON(PU) - RON(PD) MMPUPD = x 100 RON,nom 3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the device operates between -40C and 0C (TC). PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 63 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance 34 Ohm Driver The 34 driver's current range has been calculated and summarized in Table 38 (page 64) V DD = 1.5V, Table 39 (page 64) for V DD = 1.57V, and Table 40 (page 65) for VDD = 1.42V. The individual pull-up and pull-down resistors R ON34(PD) and RON34(PU) are defined as follows: * RON34(PD) = (VOUT)/|IOUT|; RON34(PU) is turned off * RON34(PU) = (VDDQ - VOUT)/|IOUT|; RON34(PD) is turned off Table 37: 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations RON Min Nom Max Unit RZQ = 240 r 237.6 240 242.4 33.9 34.3 34.6 MR1[5,1] RON Resistor VOUT Min Nom Max Unit 0, 1 RON34(PD) 0.2 x VDDQ 20.4 34.3 38.1 0.5 x VDDQ 30.5 34.3 38.1 0.8 x VDDQ 30.5 34.3 48.5 0.2 x VDDQ 30.5 34.3 48.5 0.5 x VDDQ 30.5 34.3 38.1 0.8 x VDDQ 20.4 34.3 38.1 RZQ/7 = (240 r RON34(PU) Table 38: 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = 1.5V MR1[5,1] RON Resistor VOUT Max Nom Min Unit 0, 1 RON34(PD) IOL @ 0.2 x VDDQ 14.7 8.8 7.9 mA IOL @ 0.5 x VDDQ 24.6 21.9 19.7 mA IOL @ 0.8 x VDDQ 39.3 35.0 24.8 mA IOH @ 0.2 x VDDQ 39.3 35.0 24.8 mA IOH @ 0.5 x VDDQ 24.6 21.9 19.7 mA IOH @ 0.8 x VDDQ 14.7 8.8 7.9 mA Min Unit RON34(PU) Table 39: 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = 1.575V MR1[5,1] RON Resistor 0, 1 RON34(PD) RON34(PU) PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN VOUT Max Nom IOL @ 0.2 x VDDQ 15.5 9.2 8.3 mA IOL @ 0.5 x VDDQ 25.8 23 20.7 mA IOL @ 0.8 x VDDQ 41.2 36.8 26 mA IOH @ 0.2 x VDDQ 41.2 36.8 26 mA IOH @ 0.5 x VDDQ 25.8 23 20.7 mA IOH @ 0.8 x VDDQ 15.5 9.2 8.3 mA 64 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance Table 40: 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = 1.425V MR1[5,1] RON Resistor VOUT Max Nom Min Unit 0, 1 RON34(PD) IOL @ 0.2 x VDDQ 14.0 8.3 7.5 mA IOL @ 0.5 x VDDQ 23.3 20.8 18.7 mA IOL @ 0.8 x VDDQ 37.3 33.3 23.5 mA IOH @ 0.2 x VDDQ 37.3 33.3 23.5 mA IOH @ 0.5 x VDDQ 23.3 20.8 18.7 mA IOH @ 0.8 x VDDQ 14.0 8.3 7.5 mA RON34(PU) 34 Ohm Output Driver Sensitivity If either the temperature or the voltage changes after ZQ calibration, then the tolerance limits listed in Table 36 (page 63) can be expected to widen according to Table 41 and Table 42 (page 65). Table 41: 34 Ohm Output Driver Sensitivity Definition Symbol Min Max Unit RON(PD) @ 0.2 x VDDQ 0.6 - dRONdTL x |T| - dRONdVL x |V| 1.1 + dRONdTL x |T| + dRONdVL x |V| RZQ/7 RON(PD) @ 0.5 x VDDQ 0.9 - dRONdTM x |T| - dRONdVM x |V| 1.1 + dRONdTM x |T| + dRONdVM x |V| RZQ/7 RON(PD) @ 0.8 x VDDQ 0.9 - dRONdTH x |T| - dRONdVH x |V| 1.4 + dRONdTH x |T| + dRONdVH x |V| RZQ/7 RON(PU) @ 0.2 x VDDQ 0.9 - dRONdTL x |T| - dRONdVL x |V| 1.4 + dRONdTL x |T| + dRONdVL x |V| RZQ/7 RON(PU) @ 0.5 x VDDQ 0.9 - dRONdTM x |T| - dRONdVM x |V| 1.1 + dRONdTM x |T| + dRONdVM x |V| RZQ/7 RON(PU) @ 0.8 x VDDQ 0.6 - dRONdTH x |T| - dRONdVH x |V| 1.1 + dRONdTH x |T| + dRONdVH x |V| RZQ/7 Note: 1. T = T - T(@CALIBRATION)V = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ. Table 42: 34 Ohm Output Driver Voltage and Temperature Sensitivity PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Change Min Max Unit dRONdTM 0 1.5 %/C dRONdVM 0 0.13 %/mV dRONdTL 0 1.5 %/C dRONdVL 0 0.13 %/mV dRONdTH 0 1.5 %/C dRONdVH 0 0.13 %/mV 65 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance Alternative 40 Ohm Driver Table 43: 40 Ohm Driver Impedance Characteristics MR1[5,1] RON Resistor VOUT Min Nom Max Unit 0,0 RON40(PD) 0.2 x VDDQ 0.6 1.0 1.1 RZQ/6 0.5 x VDDQ 0.9 1.0 1.1 RZQ/6 0.8 x VDDQ 0.9 1.0 1.4 RZQ/6 RON40(PU) Pull-up/pull-down mismatch (MMPUPD) 0.2 x VDDQ 0.9 1.0 1.4 RZQ/6 0.5 x VDDQ 0.9 1.0 1.1 RZQ/6 0.8 x VDDQ 0.6 1.0 1.1 RZQ/6 0.5 x VDDQ -10% n/a 10 % 1. Tolerance limits assume RZQ of 240 1% and are applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS). Refer to 40 Ohm Output Driver Sensitivity (page 66) if either the temperature or the voltage changes after calibration. 2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Measure both RON(PU) and RON(PD) at 0.5 x VDDQ: RON(PU) - RON(PD) MMPUPD = x 100 RON,nom Notes: 3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the device operates between -40C and 0C (TC). 40 Ohm Output Driver Sensitivity If either the temperature or the voltage changes after I/O calibration, then the tolerance limits listed in Table 43 can be expected to widen according to Table 44 and Table 45 (page 67). Table 44: 40 Ohm Output Driver Sensitivity Definition Symbol Min Max Unit RON(PD) @ 0.2 x VDDQ 0.6 - dRONdTL x |T| - dRONdVL x |V| 1.1 + dRONdTL x |T| + dRONdVL x |V| RON(PD) @ 0.5 x VDDQ 0.9 - dRONdTM x |T| - dRONdVM x |V| 1.1 + dRONdTM x |T| + dRONdVM x |V| RZQ/6 RON(PD) @ 0.8 x VDDQ 0.9 - dRONdTH x |T| - dRONdVH x |V| 1.4 + dRONdTH x |T| + dRONdVH x |V| RZQ/6 RON(PU) @ 0.2 x VDDQ 0.9 - dRONdTL x |T| - dRONdVL x |V| 1.4 + dRONdTL x |T| + dRONdVL x |V| RZQ/6 RON(PU) @ 0.5 x VDDQ 0.9 - dRONdTM x |T| - dRONdVM x |V| 1.1 + dRONdTM x |T| + dRONdVM x |V| RZQ/6 RON(PU) @ 0.8 x VDDQ 0.6 - dRONdTH x |T| - dRONdVH x |V| 1.1 + dRONdTH x |T| + dRONdVH x |V| RZQ/6 Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN RZQ/6 1. T = T - T(@CALIBRATION)V = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ. 66 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance Table 45: 40 Ohm Output Driver Voltage and Temperature Sensitivity PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Change Min Max Unit dRONdTM 0 1.5 %/C dRONdVM 0 0.15 %/mV dRONdTL 0 1.5 %/C dRONdVL 0 0.15 %/mV dRONdTH 0 1.5 %/C dRONdVH 0 0.15 %/mV 67 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions Output Characteristics and Operating Conditions The DRAM uses both single-ended and differential output drivers. The single-ended output driver is summarized below, while the differential output driver is summarized in Table 47 (page 69). Table 46: Single-Ended Output Driver Characteristics All voltages are referenced to VSS Parameter/Condition Output leakage current: DQ are disabled; 0V VOUT VDDQ; ODT is disabled; ODT is HIGH Output slew rate: Single-ended; For rising and falling edges, measure between VOL(AC) = VREF - 0.1 x VDDQ and VOH(AC) = VREF + 0.1 x VDDQ Symbol Min Max Unit Notes IOZ -5 5 A 1 SRQse 2.5 6 V/ns 1, 2, 3, 4 Single-ended DC high-level output voltage VOH(DC) 0.8 x VDDQ V 1, 2, 5 Single-ended DC mid-point level output voltage VOM(DC) 0.5 x VDDQ V 1, 2, 5 Single-ended DC low-level output voltage VOL(DC) 0.2 x VDDQ V 1, 2, 5 Single-ended AC high-level output voltage VOH(AC) VTT + 0.1 x VDDQ V 1, 2, 3, 6 V 1, 2, 3, 6 % 1, 7 Single-ended AC low-level output voltage VOL(AC) Delta RON between pull-up and pull-down for DQ/DQS MMPUPD PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 10 Output to VTT (VDDQ/2) via 25 resistor Test load for AC timing and output slew rates Notes: VTT - 0.1 x VDDQ -10 3 1. RZQ of 240 1% with RZQ/7 enabled (default 34 driver) and is applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS). 2. VTT = VDDQ/2. 3. See Figure 29 (page 70) for the test load configuration. 4. The 6 V/ns maximum is applicable for a single DQ signal when it is switching either from HIGH to LOW or LOW to HIGH while the remaining DQ signals in the same byte lane are either all static or all switching in the opposite direction. For all other DQ signal switching combinations, the maximum limit of 6 V/ns is reduced to 5 V/ns. 5. See Table 36 (page 63) for IV curve linearity. Do not use AC test load. 6. See Table 48 (page 71) for output slew rate. 7. See Table 36 (page 63) for additional information. 8. See Figure 27 (page 69) for an example of a single-ended output signal. 68 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions Table 47: Differential Output Driver Characteristics All voltages are referenced to VSS Parameter/Condition Symbol Min Max Unit Notes IOZ -5 5 A 1 Output slew rate: Differential; For rising and falling edges, measure between VOL,diff(AC) = -0.2 x VDDQ and VOH,diff(AC) = +0.2 x VDDQ SRQdiff 5 12 V/ns 1 Output differential cross-point voltage VOX(AC) VREF - 150 VREF + 150 mV 1, 2, 3 Differential high-level output voltage VOH,diff(AC) V 1, 4 Differential low-level output voltage VOL,diff(AC) V 1, 4 % 1, 5 Output leakage current: DQ are disabled; 0V VOUT VDDQ; ODT is disabled; ODT is HIGH Delta Ron between pull-up and pull-down for DQ/DQS MMPUPD -0.2 x VDDQ -10 10 Output to VTT (VDDQ/2) via 25 resistor Test load for AC timing and output slew rates Notes: +0.2 x VDDQ 3 1. RZQ of 240 1% with RZQ/7 enabled (default 34 driver) and is applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS). 2. VREF = VDDQ/2; slew rate @ 5 V/ns, interpolate for faster slew rate. 3. See Figure 29 (page 70) for the test load configuration. 4. See Table 49 (page 72) for the output slew rate. 5. See Table 36 (page 63) for additional information. 6. See Figure 28 (page 70) for an example of a differential output signal. Figure 27: DQ Output Signal MAX output VOH(AC) VOL(AC) MIN output PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 69 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions Figure 28: Differential Output Signal MAX output VOH X X VOX(AC)max X X VOX(AC)min VOL MIN output Reference Output Load Figure 29 represents the effective reference load of 25 used in defining the relevant device AC timing parameters (except ODT reference timing) as well as the output slew rate measurements. It is not intended to be a precise representation of a particular system environment or a depiction of the actual load presented by a production tester. System designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment. Figure 29: Reference Output Load for AC Timing and Output Slew Rate VDDQ/2 DUT VREF DQ DQS DQS# RTT = 25 VTT = VDDQ/2 Timing reference point ZQ RZQ = 240 VSS PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 70 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions Slew Rate Definitions for Single-Ended Output Signals The single-ended output driver is summarized in Table 46 (page 68). With the reference load for timing measurements, the output slew rate for falling and rising edges is defined and measured between V OL(AC) and V OH(AC) for single-ended signals. Table 48: Single-Ended Output Slew Rate Definition Single-Ended Output Slew Rates (Linear Signals) Measured Output Edge From To Calculation DQ Rising VOL(AC) VOH(AC) VOH(AC) - VOL(AC) TRse Falling VOH(AC) VOL(AC) VOH(AC) - VOL(AC) TFse Figure 30: Nominal Slew Rate Definition for Single-Ended Output Signals TRse VOH(AC) VTT VOL(AC) TFse PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 71 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions Slew Rate Definitions for Differential Output Signals The differential output driver is summarized in Table 47 (page 69). With the reference load for timing measurements, the output slew rate for falling and rising edges is defined and measured between V OL(AC) and V OH(AC) for differential signals. Table 49: Differential Output Slew Rate Definition Differential Output Slew Rates (Linear Signals) Measured Output Edge From To Calculation DQS, DQS# Rising VOL,diff(AC) VOH,diff(AC) VOH,diff(AC) - VOL,diff(AC) TRdiff Falling VOH,diff(AC) VOL,diff(AC) VOH,diff(AC) - VOL,diff(AC) TFdiff Figure 31: Nominal Differential Output Slew Rate Definition for DQS, DQS# TRdiff VOH,diff(AC) 0 VOL,diff(AC) TFdiff PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 72 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables Speed Bin Tables Table 50: DDR3-1066 Speed Bins DDR3-1066 Speed Bin -187E -187 CL-tRCD-tRP 7-7-7 8-8-8 Parameter Symbol Min Max Min Max Unit tAA 13.125 - 15 - ns tRCD 13.125 - 15 - ns PRECHARGE command period tRP 13.125 - 15 - ns ACTIVATE-to-ACTIVATE or REFRESH command period tRC 50.625 - 52.5 - ns tRAS 37.5 9 x tREFI 37.5 9 x tREFI ns 1 3.0 3.3 3.0 3.3 ns 2 ns 3 Internal READ command to first data ACTIVATE to internal READ or WRITE delay time ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 CL = 7 CL = 8 CWL = 5 tCK (AVG) CWL = 6 tCK (AVG) CWL = 5 tCK (AVG) ns 2 CWL = 6 tCK (AVG) Reserved Reserved ns 3 CWL = 5 tCK (AVG) Reserved Reserved ns 3 CWL = 6 tCK (AVG) Reserved ns 2, 3 CWL = 5 tCK (AVG) Reserved ns 3 CWL = 6 tCK (AVG) ns 2 Reserved 2.5 <2.5 Reserved 1.875 Supported CWL settings Notes: 3.3 1.875 Supported CL settings PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Notes <2.5 Reserved 2.5 3.3 1.875 <2.5 5, 6, 7, 8 5, 6, 8 CK 5, 6 5, 6 CK 1. tREFI depends on TOPER. 2. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 3. Reserved settings are not allowed. 73 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables Table 51: DDR3-1333 Speed Bins DDR3-1333 Speed Bin -15E1 -152 CL-tRCD-tRP 9-9-9 10-10-10 Parameter Symbol Min Max Min Max Unit tAA 13.5 - 15 - ns tRCD 13.5 - 15 - ns PRECHARGE command period tRP 13.5 - 15 - ns ACTIVATE-to-ACTIVATE or REFRESH command period tRC 49.5 - 51 - ns tRAS 36 9 x tREFI 36 9 x tREFI ns 3 3.0 3.3 3.0 3.3 ns 4 ns 5 Internal READ command to first data ACTIVATE to internal READ or WRITE delay time ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 CL = 7 CL = 8 CL = 9 CL = 10 CWL = 5 tCK (AVG) CWL = 6, 7 tCK (AVG) CWL = 5 tCK (AVG) ns 4 CWL = 6 tCK (AVG) Reserved Reserved ns 5 CWL = 7 tCK (AVG) Reserved Reserved ns 5 CWL = 5 tCK (AVG) Reserved Reserved ns 5 CWL = 6 tCK (AVG) Reserved ns 4, 5 CWL = 7 tCK (AVG) Reserved Reserved ns 5 CWL = 5 tCK (AVG) Reserved Reserved ns 5 CWL = 6 tCK (AVG) ns 4 CWL = 7 tCK (AVG) Reserved Reserved ns 5 CWL = 5, 6 tCK (AVG) Reserved Reserved ns 5 CWL = 7 tCK (AVG) Reserved ns 4, 5 CWL = 5, 6 tCK (AVG) Reserved ns 5 CWL = 7 tCK (AVG) ns 4 Reserved 2.5 <2.5 1.875 1.5 <2.5 <1.875 Reserved 1.5 Supported CWL settings Notes: 3.3 1.875 Supported CL settings PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Notes <1.875 Reserved 2.5 3.3 1.875 1.5 <2.5 <1.875 5, 6, 7, 8, 9, 10 5, 6, 8, 10 CK 5, 6, 7 5, 6, 7 CK 1. 2. 3. 4. The -15E speed grade is backward compatible with 1066, CL = 7 (-187E). The -15 speed grade is backward compatible with 1066, CL = 8 (-187). tREFI depends on T OPER. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 5. Reserved settings are not allowed. 74 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables Table 52: DDR3-1600 Speed Bins -1251 DDR3-1600 Speed Bin CL-tRCD-tRP 11-11-11 Parameter Symbol Min Max Unit tAA 13.75 - ns tRCD 13.75 - ns PRECHARGE command period tRP 13.75 - ns ACTIVATE-to-ACTIVATE or REFRESH command period tRC 48.75 - ns tRAS 35 9 x tREFI ns 2 3.0 3.3 ns 3 ns 4 Internal READ command to first data ACTIVATE to internal READ or WRITE delay time ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 CL = 7 CL = 8 CL = 9 CL = 10 CL = 11 CWL = 5 tCK (AVG) CWL = 6, 7, 8 tCK (AVG) CWL = 5 tCK (AVG) ns 3 CWL = 6 tCK (AVG) Reserved ns 4 CWL = 7, 8 tCK (AVG) Reserved ns 4 CWL = 5 tCK (AVG) Reserved ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 7 tCK (AVG) Reserved ns 4 CWL = 8 tCK (AVG) Reserved ns 4 CWL = 5 tCK (AVG) Reserved ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 7 tCK (AVG) Reserved ns 4 CWL = 8 tCK (AVG) Reserved ns 4 CWL = 5, 6 tCK (AVG) Reserved ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 8 tCK (AVG) Reserved ns 4 CWL = 5, 6 tCK (AVG) Reserved ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 8 tCK (AVG) Reserved ns 4 CWL = 5, 6, 7 tCK (AVG) Reserved ns 4 CWL = 8 tCK (AVG) ns 3 Supported CL settings Supported CWL settings Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Notes Reserved 2.5 3.3 1.875 <2.5 1.875 1.5 1.5 <2.5 <1.875 <1.875 1.25 <1.5 5, 6, 7, 8, 9, 10, 11 CK 5, 6, 7, 8 CK 1. The -125 speed grade is backward compatible with 1333, CL = 9 (-15E) and 1066, CL = 7 (-187E). 2. tREFI depends on TOPER. 3. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 4. Reserved settings are not allowed. 75 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables Table 53: DDR3-1866 Speed Bins -1071 DDR3-1866 Speed Bin CL-tRCD-tRP 13-13-13 Parameter Symbol Min Max tAA 13.91 20 tRCD 13.91 - ns PRECHARGE command period tRP 13.91 - ns ACTIVATE-to-ACTIVATE or REFRESH command period tRC 47.91 - ns tRAS 34 9 x tREFI ns 2 3.0 3.3 ns 3 ns 4 Internal READ command to first data ACTIVATE to internal READ or WRITE delay time ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 CL = 7 CL = 8 CL = 9 CL = 10 CL = 11 CL = 12 CL = 13 CWL = 5 (AVG) CWL = 6, 7, 8, 9 tCK (AVG) CWL = 5 tCK (AVG) ns 3 CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4 CWL = 5, 7, 8, 9 tCK (AVG) Reserved ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 5, 8, 9 tCK (AVG) ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 7 tCK (AVG) Reserved ns 4 CWL = 5, 6, 8, 9 tCK (AVG) Reserved ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 5, 6, 9 tCK (AVG) ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 8 tCK (AVG) ns 4 CWL = 5, 6, 7 tCK (AVG) ns 4 CWL = 8 tCK (AVG) ns 3 CWL = 9 tCK (AVG) Reserved ns 4 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4 CWL = 9 tCK (AVG) Reserved ns 4 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4 CWL = 9 tCK (AVG) ns 3 Supported CWL settings PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Notes tCK Supported CL settings Notes: Unit Reserved 2.5 3.3 1.875 <2.5 Reserved 1.875 1.5 <2.5 <1.875 Reserved 1.5 <1.875 Reserved Reserved 1.25 <1.5 1.071 <1.25 5, 6, 7, 8, 9, 10, 11, 13 CK 5, 6, 7, 8, 9 CK 1. The -107 speed grade is backward compatible with 1600, CL = 11 (-125) , 1333, CL = 9 (-15E) and 1066, CL = 7 (-187E). 2. tREFI depends on TOPER. 3. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 4. Reserved settings are not allowed. 76 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Speed Bin Tables Table 54: DDR3-2133 Speed Bins -0931 DDR3-2133 Speed Bin CL-tRCD-tRP 14-14-14 Parameter Symbol Min Max tAA 13.09 20 tRCD 13.09 - ns PRECHARGE command period tRP 13.09 - ns ACTIVATE-to-ACTIVATE or REFRESH command period tRC 46.13 - ns tRAS 33 9 x tREFI ns 2 3.0 3.3 ns 3 ns 4 Internal READ command to first data ACTIVATE to internal READ or WRITE delay time ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 CL = 7 CL = 8 CL = 9 CL = 10 CL = 11 CL = 12 CL = 13 CL = 14 CWL = 5 (AVG) CWL = 6, 7, 8, 9 tCK (AVG) CWL = 5 tCK (AVG) ns 3 CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4 CWL = 5, 7, 8, 9 tCK (AVG) Reserved ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 5, 8, 9 tCK (AVG) ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 7 tCK (AVG) Reserved ns 4 CWL = 5, 6, 8, 9 tCK (AVG) Reserved ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 5, 6, 9 tCK (AVG) ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 8 tCK (AVG) ns 4 CWL = 5, 6, 7 tCK (AVG) ns 4 CWL = 8 tCK (AVG) ns 3 CWL = 9 tCK (AVG) Reserved ns 4 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4 CWL = 9 tCK (AVG) Reserved ns 4 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4 CWL = 9 tCK (AVG) 1.071 <1.25 ns 3 CWL = 5, 6, 7, 8, 9 tCK (AVG) Reserved Reserved ns 4 CWL = 10 tCK (AVG) 0.938 <1.071 ns 3 Supported CWL settings PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Notes tCK Supported CL settings Notes: Unit Reserved 2.5 3.3 1.875 <2.5 Reserved 1.875 1.5 <2.5 <1.875 Reserved 1.5 <1.875 Reserved Reserved 1.25 <1.5 5, 6, 7, 8, 9, 10, 11, 13, 14 CK 5, 6, 7, 8, 9 CK 1. The -093 speed grade is backward compatible with 1866, CL = 13 (-107) , 1600, CL = 11 (-125) , 1333, CL = 9 (-15E) and 1066, CL = 7 (-187E). 2. tREFI depends on TOPER. 3. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 4. Reserved settings are not allowed. 77 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Electrical Characteristics and AC Operating Conditions Table 55: Electrical Characteristics and AC Operating Conditions Notes 1-8 apply to the entire table DDR3-800 Parameter Symbol Min DDR3-1066 Max Min DDR3-1333 DDR3-1600 Max Min Max Min Max Unit Notes Clock Timing Clock period average: DLL disable mode TC 85C TC = >85C to 95C tCK 8 7800 8 7800 8 7800 8 7800 ns 9, 42 (DLL_DIS) 8 3900 8 3900 8 3900 8 3900 ns 42 Clock period average: DLL enable mode tCK (AVG) ns 10, 11 High pulse width average tCH (AVG) 0.47 0.53 0.47 0.53 0.47 0.53 0.47 0.53 CK 12 Low pulse width average tCL (AVG) 0.47 0.53 0.47 0.53 0.47 0.53 CK 12 See Speed Bin Tables (page 73) for tCK range allowed 0.53 DLL locked -100 100 -90 90 -80 80 -70 70 ps 13 DLL locking tJITper,lck -90 90 -80 80 -70 70 -60 60 ps 13 Clock absolute period tCK (ABS) MIN = tCK (AVG) MIN + tJITper MIN; MAX = tCK (AVG) MAX + tJITper MAX Clock absolute high pulse width tCH (ABS) 0.43 Clock period jitter - 0.43 - 0.43 - 0.43 - ps tCK 14 78 (AVG) Clock absolute low pulse width tCL (ABS) 0.43 - 0.43 - 0.43 - 0.43 - tCK 15 (AVG) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Cycle-to-cycle jitter DLL locked tJITcc 200 180 160 140 ps 16 DLL locking tJITcc,lck 180 160 140 120 ps 16 Cumulative error across 2 cycles tERR2per -147 147 -132 132 -118 118 -103 103 ps 17 3 cycles tERR3per -175 175 -157 157 -140 140 -122 122 ps 17 4 cycles tERR4per -194 194 -175 175 -155 155 -136 136 ps 17 5 cycles tERR5per -209 209 -188 188 -168 168 -147 147 ps 17 6 cycles tERR6per -222 222 -200 200 -177 177 -155 155 ps 17 7 cycles tERR7per -232 232 -209 209 -186 186 -163 163 ps 17 8 cycles tERR8per -241 241 -217 217 -193 193 -169 169 ps 17 9 cycles tERR9per -249 249 -224 224 -200 200 -175 175 ps 17 10 cycles tERR10per -257 257 -231 231 -205 205 -180 180 ps 17 11 cycles tERR11per -263 263 -237 237 -210 210 -184 184 ps 17 12 cycles tERR12per -269 269 -242 242 -215 215 -188 188 ps 17 ps 17 n = 13, 14 . . . 49, 50 cycles tERRnper tERRnper tERRnper MIN = (1 + 0.68ln[n]) x tJITper MIN MAX = (1 + 0.68ln[n]) x tJITper MAX 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions 0.47 tJITper PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 55: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3-800 Parameter Symbol Min Max DDR3-1066 Min DDR3-1333 DDR3-1600 Max Min Max Min Max Unit Notes - - - - - ps 18, 19, 44 DQ Input Timing Data setup time to DQS, DQS# Base (specification) tDS VREF @ 1 V/ns Data setup time to DQS, DQS# 75 - 25 250 - 200 - - - - - ps 19, 20 125 - 75 - 30 - 10 - ps 18, 19, 44 275 - 250 - 180 - 160 - ps 19, 20 (AC175) Base (specification) tDS (AC150) VREF @ 1 V/ns - - - - - - - - ps 18, 19 (AC135) - - - - - - - - ps 19, 20 tDH 150 - 100 - 65 - 45 - ps 18, 19 (DC100) 250 - 200 - 165 - 145 - ps 19, 20 Minimum data pulse width tDIPW 600 - 490 - 400 - 360 - ps 41 DQS, DQS# to DQ skew, per access tDQSQ - 150 - 125 - 100 ps - tCK Data setup time to DQS, DQS# Base (specification) Data hold time from DQS, DQS# Base (specification) VREF @ 1 V/ns VREF @ 1 V/ns DQ Output Timing 79 DQ output hold time from DQS, DQS# tQH 0.38 200 - - 0.38 - 0.38 - 0.38 21 (AVG) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. DQ Low-Z time from CK, CK# tLZDQ -800 400 -600 300 -500 250 -450 225 ps 22, 23 DQ High-Z time from CK, CK# tHZDQ - 400 - 300 - 250 - 225 ps 22, 23 DQS, DQS# rising to CK, CK# rising tDQSS -0.25 0.25 -0.25 0.25 -0.25 0.25 -0.27 0.27 CK 25 DQS, DQS# differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK DQS, DQS# differential input high pulse width tDQSH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK DQS, DQS# falling setup to CK, CK# rising tDSS 0.2 - 0.2 - 0.2 - 0.18 - CK 25 DQS, DQS# falling hold from CK, CK# rising tDSH 0.2 - 0.2 - 0.2 - 0.18 - CK 25 DQ Strobe Input Timing DQS, DQS# differential WRITE preamble tWPRE 0.9 - 0.9 - 0.9 - 0.9 - CK DQS, DQS# differential WRITE postamble tWPST 0.3 - 0.3 - 0.3 - 0.3 - CK DQ Strobe Output Timing DQS, DQS# rising to/from rising CK, CK# tDQSCK -400 400 -300 300 -255 255 -225 225 ps 23 DQS, DQS# rising to/from rising CK, CK# when DLL is disabled tDQSCK 1 10 1 10 1 10 1 10 ns 26 (DLL_DIS) 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions tDS PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 55: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3-800 Parameter DDR3-1066 DDR3-1333 DDR3-1600 Symbol Min Max Min Max Min Max Min Max Unit Notes DQS, DQS# differential output high time tQSH 0.38 - 0.38 - 0.40 - 0.40 - CK 21 DQS, DQS# differential output low time tQSL 0.38 - 0.38 - 0.40 - 0.40 - CK 21 DQS, DQS# Low-Z time (RL - 1) tLZDQS -800 400 -600 300 -500 250 -450 225 ps 22, 23 DQS, DQS# High-Z time (RL + BL/2) tHZDQS - 400 - 300 - 250 - 225 ps 22, 23 DQS, DQS# differential READ preamble tRPRE 0.9 Note 24 0.9 Note 24 0.9 Note 24 0.9 Note 24 CK 23, 24 DQS, DQS# differential READ postamble tRPST 0.3 Note 27 0.3 Note 27 0.3 Note 27 0.3 Note 27 CK 23, 27 Command and Address Timing CTRL, CMD, ADDR setup to CK,CK# Base (specification) tDLLK 512 - 512 - 512 - 512 - CK 28 tIS 200 - 125 - 65 - 45 - ps 29, 30, 44 375 - 300 - 240 - 220 - ps 20, 30 350 - 275 - 190 - 170 - ps 29, 30, 44 500 - 425 - 340 - 320 - ps 20, 30 275 - 200 - 140 - 120 - ps 29, 30 (AC175) VREF @ 1 V/ns CTRL, CMD, ADDR setup to CK,CK# Base (specification) tIS (AC150) 80 VREF @ 1 V/ns CTRL, CMD, ADDR hold Base (specification) from CK,CK# VREF @ 1 V/ns tIH Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. (DC100) 375 - 300 - 240 - 220 - ps 20, 30 Minimum CTRL, CMD, ADDR pulse width tIPW 900 - 780 - 620 - 560 - ps 41 ACTIVATE to internal READ or WRITE delay tRCD PRECHARGE command period ACTIVATE-to-PRECHARGE command period ACTIVATE-to-ACTIVATE command period ns 31 tRP See Speed Bin Tables (page 73) for tRP ns 31 tRAS See Speed Bin Tables (page 73) for tRAS ns 31, 32 tRC ACTIVATE-to-ACTIVATE x4/x8 (1KB page size) minimum command period x16 (2KB page size) tRRD Four ACTIVATE windows tFAW x4/x8 (1KB page size) x16 (2KB page size) Write recovery time Delay from start of internal WRITE transaction to internal READ command See Speed Bin Tables (page 73) for tRCD See Speed Bin Tables (page 73) for tRC MIN = greater of MIN = greater of MIN = greater of MIN = greater of 4CK or 10ns 4CK or 7.5ns 4CK or 6ns 4CK or 6ns ns 31, 43 CK 31 MIN = greater of 4CK or 10ns MIN = greater of 4CK or 7.5ns CK 31 40 - 37.5 - 30 - 30 - ns 31 50 - 50 - 45 - 40 - ns 31 tWR MIN = 15ns; MAX = n/a ns 31, 32, 33,34 tWTR MIN = greater of 4CK or 7.5ns; MAX = n/a CK 31, 34 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions DLL locking time PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 55: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3-800 Parameter Symbol Min DDR3-1066 Max Min Max DDR3-1333 Unit Notes READ-to-PRECHARGE time tRTP MIN = greater of 4CK or 7.5ns; MAX = n/a CK 31, 32 CAS#-to-CAS# command delay tCCD MIN = 4CK; MAX = n/a CK Auto precharge write recovery + precharge time tDAL MIN = WR + tRP/tCK Min Max DDR3-1600 Min Max (AVG); MAX = n/a CK tMRD MIN = 4CK; MAX = n/a CK MODE REGISTER SET command update delay tMOD MIN = greater of 12CK or 15ns; MAX = n/a CK MULTIPURPOSE REGISTER READ burst end to mode register set for multipurpose register exit tMPRR MIN = 1CK; MAX = n/a CK ZQCL command: Long calibration time tZQinit 512 - 512 - 512 - 512 - CK tZQoper 256 - 256 - 256 - 256 - CK tZQCS 64 - 64 - 64 - 64 - CK Calibration Timing POWER-UP and RESET operation Normal operation 81 ZQCS command: Short calibration time Initialization and Reset Timing Exit reset from CKE HIGH to a valid command Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Begin power supply ramp to power supplies stable tXPR MIN = greater of 5CK or tRFC + 10ns; MAX = n/a CK tVDDPR MIN = n/a; MAX = 200 ms RESET# LOW to power supplies stable tRPS MIN = 0; MAX = 200 ms RESET# LOW to I/O and RTT High-Z tIOZ MIN = n/a; MAX = 20 ns 35 Refresh Timing REFRESH-to-ACTIVATE or REFRESH command period Maximum refresh period Maximum average periodic refresh TC 85C tRFC - 1Gb MIN = 110; MAX = 70,200 ns tRFC - 2Gb MIN = 160; MAX = 70,200 ns tRFC - 4Gb MIN = 260; MAX = 70,200 ns tRFC - 8Gb MIN = 350; MAX = 70,200 ns - 64 (1X) ms 36 32 (2X) ms 36 tREFI 7.8 (64ms/8192) s 36 3.9 (32ms/8192) s 36 TC > 85C TC 85C TC > 85C Self Refresh Timing 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions MODE REGISTER SET command cycle time PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 55: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3-800 Parameter Symbol Min DDR3-1066 Max Min DDR3-1333 Max Min DDR3-1600 Max Min Max Unit MIN = greater of 5CK or tRFC + 10ns; MAX = n/a CK Exit self refresh to commands requiring a locked DLL tXSDLL MIN = tDLLK (MIN); MAX = n/a CK Minimum CKE low pulse width for self refresh entry to self refresh exit timing tCKESR MIN = tCKE (MIN) + CK; MAX = n/a CK Valid clocks after self refresh entry or powerdown entry tCKSRE MIN = greater of 5CK or 10ns; MAX = n/a CK Valid clocks before self refresh exit, power-down exit, or reset exit tCKSRX MIN = greater of 5CK or 10ns; MAX = n/a CK Notes 28 Power-Down Timing tCKE CKE MIN pulse width (MIN) Greater of 3CK or 7.5ns Greater of 3CK or 5.625ns Greater of 3CK or 5.625ns Greater of 3CK or 5ns CK 82 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. tCPDED MIN = 1; MAX = n/a CK tPD MIN = tCKE (MIN); MAX = 9 * tREFI CK tANPD WL - 1CK CK Power-down entry period: ODT either synchronous or asynchronous PDE Greater of tANPD or tRFC - REFRESH command to CKE LOW time CK Power-down exit period: ODT either synchronous or asynchronous PDX Command pass disable delay Power-down entry to power-down exit timing Begin power-down period prior to CKE registered HIGH tANPD + tXPDLL CK Power-Down Entry Minimum Timing ACTIVATE command to power-down entry tACTPDEN MIN = 1 CK PRECHARGE/PRECHARGE ALL command to power-down entry tPRPDEN MIN = 1 CK REFRESH command to power-down entry tREFPDEN MIN = 1 CK MRS command to power-down entry tMRSPDEN MIN = tMOD (MIN) CK READ/READ with auto precharge command to power-down entry tRDPDEN MIN = RL + 4 + 1 CK WRITE command to power-down entry BL8 (OTF, MRS) BC4OTF tWRPDEN MIN = WL + 4 + tWR/tCK (AVG) CK BC4MRS tWRPDEN MIN = WL + 2 + tWR/tCK (AVG) CK 37 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions tXS Exit self refresh to commands not requiring a locked DLL PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 55: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3-800 Parameter Symbol BL8 (OTF, MRS) WRITE with auto precharge command to BC4OTF power-down entry BC4MRS tWRAP- Min DDR3-1066 Max Min Max DDR3-1333 Min Max DDR3-1600 Min Max Unit MIN = WL + 4 + WR + 1 CK MIN = WL + 2 + WR + 1 CK Notes DEN tWRAP- DEN Power-Down Exit Timing DLL on, any valid command, or DLL off to commands not requiring locked DLL MIN = greater of 3CK or 7.5ns; MAX = n/a tXPDLL MIN = greater of 3CK or 6ns; MAX = n/a MIN = greater of 10CK or 24ns; MAX = n/a CK CK 28 CK 38 ODT Timing RTT synchronous turn-on delay ODTLon RTT synchronous turn-off delay ODTLoff CWL + AL - 2CK 83 CK 40 RTT turn-on from ODTL on reference tAON -400 400 -300 CWL + AL - 2CK 300 -250 250 -225 225 ps 23, 38 RTT turn-off from ODTL off reference tAOF 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 CK 39, 40 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Asynchronous RTT turn-on delay (power-down with DLL off) tAONPD MIN = 2; MAX = 8.5 ns 38 Asynchronous RTT turn-off delay (power-down with DLL off) tAOFPD MIN = 2; MAX = 8.5 ns 40 ODT HIGH time with WRITE command and BL8 ODTH8 MIN = 6; MAX = n/a CK ODT HIGH time without WRITE command or with WRITE command and BC4 ODTH4 MIN = 4; MAX = n/a CK Dynamic ODT Timing RTT,nom-to-RTT(WR) change skew ODTLcnw WL - 2CK CK RTT(WR)-to-RTT,nom change skew - BC4 ODTLcwn4 4CK + ODTLoff CK RTT(WR)-to-RTT,nom change skew - BL8 ODTLcwn8 6CK + ODTLoff CK RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 CK - 40 - 40 - CK Write Leveling Timing First DQS, DQS# rising edge DQS, DQS# delay Write leveling setup from rising CK, CK# crossing to rising DQS, DQS# crossing tWLMRD 40 - 40 tWLDQSEN 25 - 25 - 25 - 25 - CK tWLS 325 - 245 - 195 - 165 - ps 39 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions Precharge power-down with DLL off to commands requiring a locked DLL tXP PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 55: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3-800 Parameter DDR3-1066 DDR3-1333 DDR3-1600 Symbol Min Max Min Max Min Max Min Max Unit Write leveling hold from rising DQS, DQS# crossing to rising CK, CK# crossing tWLH 325 - 245 - 195 - 165 - ps Write leveling output delay tWLO 0 9 0 9 0 9 0 7.5 ns Write leveling output error tWLOE 0 2 0 2 0 2 0 2 ns Notes Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions 84 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN AC timing parameters are valid from specified TC MIN to TC MAX values. All voltages are referenced to VSS. Output timings are only valid for RON34 output buffer selection. The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation. The unit CK represents one clock cycle of the input clock, counting the actual clock edges. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs and 2 V/ns for differential inputs in the range between VIL(AC) and VIH(AC). All timings that use time-based values (ns, s, ms) should use tCK (AVG) to determine the correct number of clocks (Table 55 (page 78) uses CK or tCK [AVG] interchangeably). In the case of noninteger results, all minimum limits are to be rounded up to the nearest whole integer, and all maximum limits are to be rounded down to the nearest whole integer. Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is the rising edge. Clock or CK refers to the CK and CK# differential crossing point when CK is the rising edge. This output load is used for all AC timing (except ODT reference timing) and slew rates. The actual test load may be different. The output signal voltage reference point is VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure 29 (page 70)). When operating in DLL disable mode, Micron does not warrant compliance with normal mode timings or functionality. The clock's tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG) MIN is the smallest clock rate allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values specified and must be of a random Gaussian distribution in nature. Spread spectrum is not included in the jitter specification values. However, the input clock can accommodate spread-spectrum at a sweep rate in the range of 20-60 kHz with an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread spectrum may not use a clock rate below tCK (AVG) MIN. The clock's tCH (AVG) and tCL (AVG) are the average half clock period over any 200 consecutive clocks and is the smallest clock half period allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values specified and must be of a random Gaussian distribution in nature. The period jitter (tJITper) is the maximum deviation in the clock period from the average or nominal clock. It is allowed in either the positive or negative direction. tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one rising edge to the following falling edge. tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one falling edge to the following rising edge. The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL locking time. The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50, is the amount of clock time allowed to accumulate consecutively away from the average clock over n number of clock cycles. tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs and 2 V/ns slew rate differential DQS, DQS#. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transition edge to its respective data strobe signal (DQS, DQS#) crossing. 85 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions 20. The setup and hold times are listed converting the base specification values (to which derating tables apply) to VREF when the slew rate is 1 V/ns. These values, with a slew rate of 1 V/ns, are for reference only. 21. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output deratings are relative to the SDRAM input clock). 22. Single-ended signal parameter. 23. The DRAM output timing is aligned to the nominal or average clock. Most output parameters must be derated by the actual jitter error when input clock jitter is present, even when within specification. This results in each parameter becoming larger. The following parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK (MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are required to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS (MAX), tLZDQ MAX, and tAON (MAX). The parameter tRPRE (MIN) is derated by subtracting tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN). 24. The maximum preamble is bound by tLZDQS (MAX). 25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its respective clock signal (CK, CK#) crossing. The specification values are not affected by the amount of clock jitter applied, as these are relative to the clock signal crossing. These parameters should be met whether clock jitter is present. 26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command. 27. The maximum postamble is bound by tHZDQS (MAX). 28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT commands. In addition, after any change of latency tXPDLL, timing must be met. 29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address slew rate and 2 V/ns CK, CK# differential slew rate. 30. These parameters are measured from a command/address signal transition edge to its respective clock (CK, CK#) signal crossing. The specification values are not affected by the amount of clock jitter applied as the setup and hold times are relative to the clock signal crossing that latches the command/address. These parameters should be met whether clock jitter is present. 31. For these parameters, the DDR3 SDRAM device supports tnPARAM (nCK) = RU(tPARAM [ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifications are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are valid even if six clocks are less than 15ns due to input clock jitter. 32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the internal PRECHARGE command until tRAS (MIN) has been satisfied. 33. When operating in DLL disable mode, the greater of 4CK or 15ns is satisfied for tWR. 34. The start of the write recovery time is defined as follows: * For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL * For BC4 (OTF): Rising clock edge four clock cycles after WL * For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL 35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in excessive current, depending on bus activity. 36. The refresh period is 64ms when TC is less than or equal to 85C. This equates to an average refresh rate of 7.8125s. However, nine REFRESH commands should be asserted at least once every 70.3s. When TC is greater than 85C, the refresh period is 32ms. 37. Although CKE is allowed to be registered LOW after a REFRESH command when PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 86 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions tREFPDEN 38. 39. 40. 41. 42. 43. 44. (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN) is required. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT reference load is shown in Figure 21 (page 56). Designs that were created prior to JEDEC tightening the maximum limit from 9ns to 8.5ns will be allowed to have a 9ns maximum. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when input clock jitter is present. This results in each parameter becoming larger. The parameters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX). ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is shown in Figure 22 (page 59). This output load is used for ODT timings (see Figure 29 (page 70)). Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the consecutive crossing of VREF(DC). Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should have at least one NOP command between it and another AUTO REFRESH command. Additionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should be followed by a PRECHARGE ALL command. DRAM devices should be evenly addressed when being accessed. Disproportionate accesses to a particular row address may result in a reduction of REFRESH characteristics or product lifetime. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific speed bin, the user may choose either value for the input AC level. Whichever value is used, the associated setup time for that AC level must also be used. Additionally, one VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may be used for data inputs. For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/ command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 87 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Electrical Characteristics and AC Operating Conditions Table 56: Electrical Characteristics and AC Operating Conditions for Speed Extensions Notes 1-8 apply to the entire table DDR3-1866 Parameter Symbol Min DDR3-2133 Max Min Max Unit Notes Clock Timing Clock period average: DLL disable mode tCK 8 7800 8 7800 ns 9, 42 (DLL_DIS) 8 3900 8 3900 ns 42 TC = 0C to 85C TC = >85C to 95C Clock period average: DLL enable mode tCK (AVG) High pulse width average tCH (AVG) 0.47 0.53 0.47 0.53 CK 12 Low pulse width average tCL (AVG) 0.47 0.53 0.47 0.53 CK 12 range allowed ns 10, 11 88 DLL locked tJITper -60 60 -50 50 ps 13 DLL locking tJITper,lck -50 50 -40 40 ps 13 - tCK 14 Clock absolute period tCK (ABS) Clock absolute high pulse width tCH (ABS) MIN = tCK (AVG) MIN + tJITper MIN; MAX = tCK (AVG) MAX + tJITper MAX ps 0.43 - 0.43 (AVG) Clock absolute low pulse width tCL (ABS) 0.43 - 0.43 - tCK 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. (AVG) Cycle-to-cycle jitter DLL locked tJITcc 120 120 ps 16 DLL locking tJITcc,lck 100 100 ps 16 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions Clock period jitter See Speed Bin Tables (page 73) for tCK PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 56: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3-1866 DDR3-2133 Symbol Min Max Min Max Unit Notes Cumulative error across 2 cycles tERR2per -88 88 -74 74 ps 17 3 cycles tERR3per -105 105 -87 87 ps 17 4 cycles tERR4per -117 117 -97 97 ps 17 5 cycles tERR5per -126 126 -105 105 ps 17 6 cycles tERR6per -133 133 -111 111 ps 17 7 cycles tERR7per -139 139 -116 116 ps 17 8 cycles tERR8per -145 145 -121 121 ps 17 9 cycles tERR9per -150 150 -125 125 ps 17 10 cycles tERR10per -154 154 -128 128 ps 17 11 cycles tERR11per -158 158 -132 132 ps 17 12 cycles tERR12per -161 161 -134 134 ps 89 n = 13, 14 . . . 49, 50 cycles tERRnper tERRnper tERRnper MIN = (1 + 0.68ln[n]) x tJITper MIN 17 17 MAX = (1 + 0.68ln[n]) x tJITper MAX ps DQ Input Timing Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Data setup time to DQS, DQS# Base (specification) @ 2 V/ns tDS VREF @ 2 V/ns Data hold time from DQS, DQS# Base (specification) @ 2 V/ns 68 - 53 - ps 18, 19 135 - 120.5 - ps 19, 20 70 - 55 - ps 18, 19 120 - 105 - ps 19, 20 320 - 280 - ps 41 85 - 75 ps - tCK (AC135) tDH (DC100) VREF @ 2 V/ns Minimum data pulse width tDIPW DQS, DQS# to DQ skew, per access tDQSQ DQ Output Timing DQ output hold time from DQS, DQS# tQH - 0.38 - 0.38 21 (AVG) DQ Low-Z time from CK, CK# tLZDQ -390 195 -360 180 ps 22, 23 DQ High-Z time from CK, CK# tHZDQ - 195 - 180 ps 22, 23 DQS, DQS# rising to CK, CK# rising tDQSS -0.27 0.27 CK 25 DQ Strobe Input Timing -0.27 0.27 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions Parameter PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 56: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3-1866 Parameter DDR3-2133 Symbol Min Max Min Max Unit DQS, DQS# differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 CK DQS, DQS# differential input high pulse width tDQSH 0.45 0.55 0.45 0.55 CK Notes DQS, DQS# falling setup to CK, CK# rising tDSS 0.18 - 0.18 - CK 25 DQS, DQS# falling hold from CK, CK# rising tDSH 0.18 - 0.18 - CK 25 DQS, DQS# differential WRITE preamble tWPRE 0.9 - 0.9 - CK DQS, DQS# differential WRITE postamble tWPST 0.3 - 0.3 - CK 90 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. DQS, DQS# rising to/from rising CK, CK# tDQSCK -195 195 -180 180 ps 23 DQS, DQS# rising to/from rising CK, CK# when DLL is disabled tDQSCK 1 10 1 10 ns 26 (DLL_DIS) DQS, DQS# differential output high time tQSH 0.40 - 0.40 - CK 21 DQS, DQS# differential output low time tQSL 0.40 - 0.40 - CK 21 DQS, DQS# Low-Z time (RL - 1) tLZDQS -390 195 -360 180 ps 22, 23 DQS, DQS# High-Z time (RL + BL/2) tHZDQS - 195 - 180 ps 22, 23 DQS, DQS# differential READ preamble tRPRE 0.9 Note 24 0.9 Note 24 CK 23, 24 DQS, DQS# differential READ postamble tRPST 0.3 Note 27 0.3 Note 27 CK 23, 27 DLL locking time tDLLK 512 - 512 - CK 28 tIS 65 - 60 - ps 29, 30, 44 Command and Address Timing CTRL, CMD, ADDR setup to CK,CK# Base (specification) CTRL, CMD, ADDR setup to CK,CK# Base (specification) (AC135) VREF @ 1 V/ns tIS 200 - 195 - ps 20, 30 150 - 135 - ps 29, 30, 44 260 - ps 20, 30 (AC125) VREF @ 1 V/ns 275 - tIH 100 - 95 - ps 29, 30 (DC100) 200 - 195 - ps 20, 30 Minimum CTRL, CMD, ADDR pulse width tIPW 535 - 470 - ps 41 ACTIVATE to internal READ or WRITE delay tRCD ns 31 tRP ns 31 tRAS ns 31, 32 CTRL, CMD, ADDR hold Base (specification) from CK,CK# VREF @ 1 V/ns PRECHARGE command period ACTIVATE-to-PRECHARGE command period tRP tRAS See Speed Bin Tables (page 73) for tRCD See Speed Bin Tables (page 73) for See Speed Bin Tables (page 73) for 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions DQ Strobe Output Timing PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 56: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3-1866 Parameter Symbol Unit Notes tRC See Speed Bin Tables (page 73) for tRC ns 31, 43 ACTIVATE-to-ACTIVATE 1KB page size minimum command pe- 2KB page size riod tRRD MIN = greater of 4CK or 5ns CK 31 MIN = greater of 4CK or 6ns CK 31 Four ACTIVATE windows tFAW ACTIVATE-to-ACTIVATE command period 1KB page size 2KB page size Min DDR3-2133 Max Min Max 27 - 25 - ns 31 35 - 35 - ns 31 MIN = 15ns; MAX = n/a ns 31, 32, 33 tWTR MIN = greater of 4CK or 7.5ns; MAX = n/a CK 31, 34 READ-to-PRECHARGE time tRTP MIN = greater of 4CK or 7.5ns; MAX = n/a CK 31, 32 CAS#-to-CAS# command delay tCCD MIN = 4CK; MAX = n/a CK Auto precharge write recovery + precharge time tDAL MIN = WR + tRP/tCK (AVG); MAX = n/a CK MODE REGISTER SET command cycle time tMRD MIN = 4CK; MAX = n/a CK MODE REGISTER SET command update delay tMOD MIN = greater of 12CK or 15ns; MAX = n/a CK MULTIPURPOSE REGISTER READ burst end to mode register set for multipurpose register exit tMPRR MIN = 1CK; MAX = n/a CK ZQCL command: Long calibration time tZQinit MIN = n/a MAX = max(512nCK, 640ns) CK tZQoper MIN = n/a MAX = max(256nCK, 320ns) CK Write recovery time Delay from start of internal WRITE transaction to internal READ command 91 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Calibration Timing POWER-UP and RESET operation Normal operation ZQCS command: Short calibration time MIN = n/a MAX = max(64nCK, 80ns) tZQCS CK Initialization and Reset Timing tXPR MIN = greater of 5CK or tRFC + 10ns; MAX = n/a CK tVDDPR MIN = n/a; MAX = 200 ms RESET# LOW to power supplies stable tRPS MIN = 0; MAX = 200 ms RESET# LOW to I/O and RTT High-Z tIOZ MIN = n/a; MAX = 20 ns Exit reset from CKE HIGH to a valid command Begin power supply ramp to power supplies stable 35 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions tWR PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 56: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3-1866 Parameter Symbol Min DDR3-2133 Max Min Max Unit Notes Refresh Timing REFRESH-to-ACTIVATE or REFRESH command period TC 85C Maximum average periodic refresh TC 85C - 1Gb MIN = 110; MAX = 70,200 ns tRFC - 2Gb MIN = 160; MAX = 70,200 ns tRFC - 4Gb MIN = 260; MAX = 70,200 ns tRFC - 8Gb MIN = 350; MAX = 70,200 ns 64 (1X) ms 36 32 (2X) ms 36 - TC > 85C tREFI 7.8 (64ms/8192) s 36 3.9 (32ms/8192) s 36 tXS MIN = greater of 5CK or tRFC + 10ns; MAX = n/a CK Exit self refresh to commands requiring a locked DLL tXSDLL MIN = tDLLK (MIN); MAX = n/a CK Minimum CKE low pulse width for self refresh entry to self refresh exit timing tCKESR MIN = tCKE (MIN) + CK; MAX = n/a CK Valid clocks after self refresh entry or powerdown entry tCKSRE MIN = greater of 5CK or 10ns; MAX = n/a CK Valid clocks before self refresh exit, power-down exit, or reset exit tCKSRX MIN = greater of 5CK or 10ns; MAX = n/a CK TC > 85C Self Refresh Timing Exit self refresh to commands not requiring a locked DLL 92 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Power-Down Timing CKE MIN pulse width tCKE Greater of 3CK or 5ns CK tCPDED MIN = 2; MAX = n/a CK tPD MIN = tCKE (MIN); MAX = 9 * tREFI CK tANPD WL - 1CK CK Power-down entry period: ODT either synchronous or asynchronous PDE Greater of tANPD or tRFC - REFRESH command to CKE LOW time CK Power-down exit period: ODT either synchronous or asynchronous PDX Command pass disable delay Power-down entry to power-down exit timing Begin power-down period prior to CKE registered HIGH (MIN) tANPD + tXPDLL CK 28 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions Maximum refresh period tRFC PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 56: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3-1866 Parameter Symbol Min DDR3-2133 Max Min Max Unit Notes Power-Down Entry Minimum Timing ACTIVATE command to power-down entry tACTPDEN MIN = 2 CK PRECHARGE/PRECHARGE ALL command to power-down entry tPRPDEN MIN = 2 CK REFRESH command to power-down entry tREFPDEN MIN = 2 CK MRS command to power-down entry tMRSPDEN tMOD CK MIN = (MIN) MIN = RL + 4 + 1 CK WRITE command to power-down entry BL8 (OTF, MRS) BC4OTF tWRPDEN MIN = WL + 4 + tWR/tCK (AVG) CK BC4MRS tWRPDEN MIN = WL + 2 + tWR/tCK (AVG) CK BL8 (OTF, MRS) BC4OTF tWRAP- MIN = WL + 4 + WR + 1 CK BC4MRS tWRAP- MIN = WL + 2 + WR + 1 CK WRITE with auto precharge command to power-down entry DEN DEN Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Power-Down Exit Timing DLL on, any valid command, or DLL off to commands not requiring locked DLL Precharge power-down with DLL off to commands requiring a locked DLL tXP MIN = greater of 3CK or 6ns; MAX = n/a CK tXPDLL MIN = greater of 10CK or 24ns; MAX = n/a CK 28 CK 38 ODT Timing RTT synchronous turn-on delay ODTL on RTT synchronous turn-off delay ODTL off CWL + AL - 2CK CK 40 RTT turn-on from ODTL on reference tAON -195 195 CWL + AL - 2CK -180 180 ps 23, 38 RTT turn-off from ODTL off reference tAOF 0.3 0.7 0.3 0.7 CK 39, 40 Asynchronous RTT turn-on delay (power-down with DLL off) tAONPD MIN = 2; MAX = 8.5 ns 38 Asynchronous RTT turn-off delay (power-down with DLL off) tAOFPD MIN = 2; MAX = 8.5 ns 40 ODT HIGH time with WRITE command and BL8 ODTH8 MIN = 6; MAX = n/a CK 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions 93 READ/READ with auto precharge command to power-down entry tRDPDEN 37 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 56: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3-1866 Parameter Symbol ODT HIGH time without WRITE command or with WRITE command and BC4 ODTH4 Min DDR3-2133 Max Min Max MIN = 4; MAX = n/a Unit Notes CK Dynamic ODT Timing RTT,nom-to-RTT(WR) change skew ODTLcnw WL - 2CK CK RTT(WR)-to-RTT,nom change skew - BC4 ODTLcwn4 4CK + ODTLoff CK RTT(WR)-to-RTT,nom change skew - BL8 ODTLcwn8 6CK + ODTLoff CK RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 CK tWLMRD 40 - 40 - CK tWLDQSEN 25 - 25 - CK Write leveling setup from rising CK, CK# crossing to rising DQS, DQS# crossing tWLS 140 - 125 - ps Write leveling hold from rising DQS, DQS# crossing to rising CK, CK# crossing tWLH 140 - 125 - ps Write leveling output delay tWLO 0 7.5 0 7 ns Write leveling output error tWLOE 0 2 0 2 ns First DQS, DQS# rising edge DQS, DQS# delay 39 94 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions Write Leveling Timing 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN AC timing parameters are valid from specified TC MIN to TC MAX values. All voltages are referenced to VSS. Output timings are only valid for RON34 output buffer selection. The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation. The unit CK represents one clock cycle of the input clock, counting the actual clock edges. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs (DQs are at 2V/ns for DDR3-1866 and DDR3-2133) and 2 V/ns for differential inputs in the range between VIL(AC) and VIH(AC). All timings that use time-based values (ns, s, ms) should use tCK (AVG) to determine the correct number of clocks (Table 56 (page 88) uses CK or tCK [AVG] interchangeably). In the case of noninteger results, all minimum limits are to be rounded up to the nearest whole integer, and all maximum limits are to be rounded down to the nearest whole integer. Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is the rising edge. Clock or CK refers to the CK and CK# differential crossing point when CK is the rising edge. This output load is used for all AC timing (except ODT reference timing) and slew rates. The actual test load may be different. The output signal voltage reference point is VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure 29 (page 70)). When operating in DLL disable mode, Micron does not warrant compliance with normal mode timings or functionality. The clock's tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG) MIN is the smallest clock rate allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values specified and must be of a random Gaussian distribution in nature. Spread spectrum is not included in the jitter specification values. However, the input clock can accommodate spread-spectrum at a sweep rate in the range of 20-60 kHz with an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread spectrum may not use a clock rate below tCK (AVG) MIN. The clock's tCH (AVG) and tCL (AVG) are the average half clock period over any 200 consecutive clocks and is the smallest clock half period allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values specified and must be of a random Gaussian distribution in nature. The period jitter (tJITper) is the maximum deviation in the clock period from the average or nominal clock. It is allowed in either the positive or negative direction. tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one rising edge to the following falling edge. tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one falling edge to the following rising edge. The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL locking time. The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50, is the amount of clock time allowed to accumulate consecutively away from the average clock over n number of clock cycles. tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs (DQs are at 2V/ns for DDR3-1866 and DDR3-2133) and 2 V/ns slew rate differential DQS, DQS#. 95 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions 19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transition edge to its respective data strobe signal (DQS, DQS#) crossing. 20. The setup and hold times are listed converting the base specification values (to which derating tables apply) to VREF when the slew rate is 1 V/ns (DQs are at 2V/ns for DDR3-1866 and DDR3-2133). These values, with a slew rate of 1 V/ns (DQs are at 2V/ns for DDR3-1866 and DDR3-2133), are for reference only. 21. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output deratings are relative to the SDRAM input clock). 22. Single-ended signal parameter. 23. The DRAM output timing is aligned to the nominal or average clock. Most output parameters must be derated by the actual jitter error when input clock jitter is present, even when within specification. This results in each parameter becoming larger. The following parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK (MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are required to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS (MAX), tLZDQ (MAX), and tAON (MAX). The parameter tRPRE (MIN) is derated by subtracting tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN). 24. The maximum preamble is bound by tLZDQS (MAX). 25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its respective clock signal (CK, CK#) crossing. The specification values are not affected by the amount of clock jitter applied, as these are relative to the clock signal crossing. These parameters should be met whether clock jitter is present. 26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command. 27. The maximum postamble is bound by tHZDQS (MAX). 28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT commands. In addition, after any change of latency tXPDLL, timing must be met. 29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address slew rate and 2 V/ns CK, CK# differential slew rate. 30. These parameters are measured from a command/address signal transition edge to its respective clock (CK, CK#) signal crossing. The specification values are not affected by the amount of clock jitter applied as the setup and hold times are relative to the clock signal crossing that latches the command/address. These parameters should be met whether clock jitter is present. 31. For these parameters, the DDR3 SDRAM device supports tnPARAM (nCK) = RU(tPARAM [ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifications are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are valid even if six clocks are less than 15ns due to input clock jitter. 32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the internal PRECHARGE command until tRAS (MIN) has been satisfied. 33. When operating in DLL disable mode, the greater of 4CK or 15ns is satisfied for tWR. 34. The start of the write recovery time is defined as follows: * For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL * For BC4 (OTF): Rising clock edge four clock cycles after WL * For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL 35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in excessive current, depending on bus activity. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 96 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions 36. The refresh period is 64ms when TC is less than or equal to 85C. This equates to an average refresh rate of 7.8125s. However, nine REFRESH commands should be asserted at least once every 70.3s. When TC is greater than 85C, the refresh period is 32ms. 37. Although CKE is allowed to be registered LOW after a REFRESH command when tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN) is required. 38. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT reference load is shown in Figure 21 (page 56). Designs that were created prior to JEDEC tightening the maximum limit from 9ns to 8.5ns will be allowed to have a 9ns maximum. 39. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when input clock jitter is present. This results in each parameter becoming larger. The parameters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX). 40. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is shown in Figure 22 (page 59). This output load is used for ODT timings (see Figure 29 (page 70)). 41. Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the consecutive crossing of VREF(DC). 42. Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should have at least one NOP command between it and another AUTO REFRESH command. Additionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should be followed by a PRECHARGE ALL command. 43. DRAM devices should be evenly addressed when being accessed. Disproportionate accesses to a particular row address may result in a reduction of REFRESH characteristics or product lifetime. 44. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific speed bin, the user may choose either value for the input AC level. Whichever value is used, the associated setup time for that AC level must also be used. Additionally, one VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may be used for data inputs. For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/ command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 97 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Command and Address Setup, Hold, and Derating Command and Address Setup, Hold, and Derating The total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS (base) and tIH (base) values (see Table 57; values come from Table 55 (page 78)) to the tIS and tIH derating values (see Table 58 (page 99) and Table 59 (page 99)), respectively. Example: tIS (total setup time) = tIS (base) + tIS. For a valid transition, the input signal has to remain above/below V IH(AC)/VIL(AC) for some time tVAC (see Table 59 (page 99)). Although the total setup time for slow slew rates might be negative (for example, a valid input signal will not have reached V IH(AC)/VIL(AC) at the time of the rising clock transition), a valid input signal is still required to complete the transition and to reach VIH(AC)/VIL(AC) (see Figure 13 (page 48) for input signal requirements). For slew rates that fall between the values listed in Table 59 (page 99) and Table 62 (page 101), the derating values may be obtained by linear interpolation. Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V REF(DC) and the first crossing of V IH(AC)min. Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V REF(DC) and the first crossing of V IL(AC)max. If the actual signal is always earlier than the nominal slew rate line between the shaded V REF(DC)-to-AC region, use the nominal slew rate for derating value (see Figure 32 (page 102)). If the actual signal is later than the nominal slew rate line anywhere between the shaded V REF(DC)-to-AC region, the slew rate of a tangent line to the actual signal from the AC level to the DC level is used for derating value (see Figure 34 (page 104)). Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V IL(DC)max and the first crossing of V REF(DC). Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min and the first crossing of V REF(DC). If the actual signal is always later than the nominal slew rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for derating value (see Figure 33 (page 103)). If the actual signal is earlier than the nominal slew rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a tangent line to the actual signal from the DC level to the V REF(DC) level is used for derating value (see Figure 35 (page 105)). Table 57: Command and Address Setup and Hold Values Referenced - AC/DC-Based Symbol 800 1066 1333 1600 1866 2133 Unit Reference AC175) 200 125 65 45 - - ps VIH(AC)/VIL(AC) AC150) 350 275 190 170 - - ps VIH(AC)/VIL(AC) AC135) - - - - 65 60 ps VIH(AC)/VIL(AC) tIS(base, AC125) - - - - 150 135 ps VIH(AC)/VIL(AC) tIH(base, DC100) 275 200 140 120 100 95 ps VIH(DC)/VIL(DC) tIS(base, tIS(base, tIS(base, PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 98 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Command and Address Setup, Hold, and Derating Table 58: Derating Values for tIS/tIH - AC175/DC100-Based tIS, tIH Derating (ps) - AC/DC-Based AC175 Threshold: VIH(AC) = VREF(DC) + 175mV, VIL(AC) = VREF(DC) - 175mV CMD/ ADDR Slew Rate V/ns CK, CK# Differential Slew Rate tIS tIH tIS tIH tIS tIH tIS tIH tIS 2.0 88 50 88 50 88 50 96 58 1.5 59 34 59 34 59 34 67 42 1.0 0 0 0 0 0 0 8 0.9 -2 -4 -2 -4 -2 -4 0.8 -6 -10 -6 -10 -6 0.7 -11 -16 -11 -16 0.6 -17 -26 -17 0.5 -35 -40 0.4 -62 -60 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns tIH tIH 104 66 75 50 8 16 6 4 -10 2 -11 -16 -26 -17 -35 -40 -62 -60 1.2 V/ns tIH tIS 112 74 83 58 16 24 14 12 -2 10 -3 -8 -26 -9 -35 -40 -62 -60 1.0 V/ns tIH tIS tIH 120 84 128 100 91 68 99 84 24 32 34 40 50 22 20 30 30 38 46 6 18 14 26 24 34 40 5 0 13 8 21 18 29 34 -18 -1 -10 7 -2 15 8 23 24 -27 -32 -19 -24 -11 -16 -2 -6 5 10 -54 -52 -46 -44 -38 -36 -30 -26 -22 -10 Table 59: Derating Values for tIS/tIH - AC150/DC100-Based tIS, tIH Derating (ps) - AC/DC-Based AC150 Threshold: VIH(AC) = VREF(DC) + 150mV, VIL(AC) = VREF(DC) - 150mV CMD/ ADDR Slew Rate V/ns CK, CK# Differential Slew Rate tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIH tIH tIS tIH tIS tIH 2.0 75 50 75 50 75 50 83 58 91 66 99 74 107 84 115 100 1.5 50 34 50 34 50 34 58 42 66 50 74 58 82 68 90 84 1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50 0.9 0 -4 0 -4 0 -4 8 4 16 12 24 20 32 30 40 46 0.8 0 -10 0 -10 0 -10 8 -2 16 6 24 14 32 24 40 40 0.7 0 -16 0 -16 0 -16 8 -8 16 0 24 8 32 18 40 34 0.6 -1 -26 -1 -26 -1 -26 7 -18 15 -10 23 -2 31 8 39 24 0.5 -10 -40 -10 -40 -10 -40 -2 -32 6 -24 14 -16 22 -6 30 10 0.4 -25 -60 -25 -60 -25 -60 -17 -52 -9 -44 -1 -36 7 -26 15 -10 4.0 V/ns PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 3.0 V/ns 2.0 V/ns 1.8 V/ns 99 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Command and Address Setup, Hold, and Derating Table 60: Derating Values for tIS/tIH - AC135/DC100-Based tIS, tIH Derating (ps) - AC/DC-Based AC135 Threshold: VIH(AC) = VREF(DC) + 135mV, VIL(AC) = VREF(DC) - 135mV CMD/ ADDR Slew Rate V/ns CK, CK# Differential Slew Rate tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIH tIH tIS tIH tIS tIH 2.0 68 50 68 50 68 50 76 58 84 66 92 74 100 84 108 100 1.5 45 34 45 34 45 34 53 42 61 50 69 58 77 68 85 84 1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50 0.9 2 -4 2 -4 2 -4 10 4 18 12 26 20 34 30 42 46 0.8 3 -10 3 -10 3 -10 11 -2 19 6 27 14 35 24 43 40 0.7 6 -16 6 -16 6 -16 14 -8 22 0 30 8 38 18 46 34 0.6 9 -26 9 -26 9 -26 17 -18 25 -10 33 -2 41 8 49 24 0.5 5 -40 5 -40 5 -40 13 -32 21 -24 29 -16 37 -6 45 10 0.4 -3 -60 -3 -60 -3 -60 6 -52 14 -44 22 -36 30 -26 38 -10 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns Table 61: Derating Values for tIS/tIH - AC125/DC100-Based tIS, tIH Derating (ps) - AC/DC-Based AC125 Threshold: VIH(AC) = VREF(DC) + 125mV, VIL(AC) = VREF(DC) - 125mV CMD/ ADDR Slew Rate V/ns CK, CK# Differential Slew Rate tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIH tIH tIS tIH tIS tIH 2.0 63 50 63 50 63 50 71 58 79 66 87 74 95 84 103 100 1.5 42 34 42 34 42 34 50 42 58 50 66 58 74 68 82 84 1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50 0.9 4 -4 4 -4 4 -4 12 4 20 12 28 20 36 30 44 46 0.8 6 -10 6 -10 6 -10 14 -2 22 6 30 14 38 24 45 40 0.7 11 -16 11 -16 11 -16 19 -8 27 0 35 8 43 18 51 34 0.6 16 -26 16 -26 16 -26 24 -18 32 -10 40 -2 48 8 56 24 0.5 15 -40 15 -40 15 -40 23 -32 31 -24 39 -16 47 -6 55 10 0.4 13 -60 13 -60 13 -60 21 -52 29 -44 37 -36 45 -26 53 -10 4.0 V/ns PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 3.0 V/ns 2.0 V/ns 1.8 V/ns 100 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Command and Address Setup, Hold, and Derating Table 62: Minimum Required Time tVAC Above VIH(AC) or Below VIL(AC)for Valid Transition Slew Rate (V/ns) tVAC at 175mV (ps) tVAC at 150mV (ps) tVAC at 135mV (ps) tVAC at 125mV (ps) >2.0 75 175 168 173 2.0 57 170 168 173 1.5 50 167 145 152 1.0 38 130 100 110 0.9 34 113 85 96 0.8 29 93 66 79 0.7 22 66 42 56 0.6 Note 1 30 10 27 0.5 Note 1 Note 1 Note 1 Note 1 <0.5 Note 1 Note 1 Note 1 Note 1 Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. Rising input signal shall become equal to or greater than VIH(ac) level and Falling input signal shall become equal to or less than VIL(ac) level. 101 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Command and Address Setup, Hold, and Derating Figure 32: Nominal Slew Rate and tVAC for tIS (Command and Address - Clock) tIS tIS tIH tIH CK CK# DQS# DQS VDDQ tVAC VIH(AC)min VREF to AC region VIH(DC)min Nominal slew rate VREF(DC) Nominal slew rate VIL(DC)max VREF to AC region VIL(DC)max tVAC VSS TF Setup slew rate falling signal = Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN TR VREF(DC) - VIL(AC)max Setup slew rate rising signal = TF VIH(AC)min - VREF(DC) TR 1. The clock and the strobe are drawn on different time scales. 102 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Command and Address Setup, Hold, and Derating Figure 33: Nominal Slew Rate for tIH (Command and Address - Clock) tIS tIS tIH tIH CK CK# DQS# DQS VDDQ VIH(AC)min VIH(DC)min Nominal slew rate DC to VREF region VREF(DC) Nominal slew rate DC to VREF region VIL(DC)max VIL(AC)max VSS TF TR VREF(DC) - VIL(DC)max Hold slew rate rising signal = TR Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN VIH(DC)min - VREF(DC) Hold slew rate falling signal = TF 1. The clock and the strobe are drawn on different time scales. 103 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Command and Address Setup, Hold, and Derating Figure 34: Tangent Line for tIS (Command and Address - Clock) tIS tIS tIH tIH CK CK# DQS# DQS VDDQ Nominal line tVAC VIH(AC)min VREF to AC region VIH(DC)min Tangent line VREF(DC) Tangent line VIL(DC)max VREF to AC region VIL(DC)max Nominal line tVAC TR VSS Tangent line (VIH(DC)min - VREF(DC)) Setup slew rate rising signal = TR TF Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Tangent line (VREF(DC) - VIL(AC)max) Setup slew rate falling signal = TF 1. The clock and the strobe are drawn on different time scales. 104 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Command and Address Setup, Hold, and Derating Figure 35: Tangent Line for tIH (Command and Address - Clock) tIS tIH tIS tIH CK CK# DQS# DQS VDDQ VIH(AC)min Nominal line VIH(DC)min DC to VREF region Tangen t line VREF(DC) DC to VREF region Tangen t line Nominal line VIL( DC)max VIL( AC)max VSS TR TR Tangent line (VREF(DC) - VIL(DC)max) Hold slew rate rising signal = TR Tangent line (VIH(DC)min - VREF(DC)) Hold slew rate falling signal = TF Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. The clock and the strobe are drawn on different time scales. 105 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Data Setup, Hold, and Derating Data Setup, Hold, and Derating The total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS (base) and tDH (base) values (see Table 63 (page 106); values come from Table 55 (page 78)) to the tDS and tDH derating values (see Table 64 (page 107)), respectively. Example: tDS (total setup time) = tDS (base) + tDS. For a valid transition, the input signal has to remain above/below V IH(AC)/VIL(AC) for some time tVAC (see Table 68 (page 110)). Although the total setup time for slow slew rates might be negative (for example, a valid input signal will not have reached V IH(AC)/VIL(AC)) at the time of the rising clock transition), a valid input signal is still required to complete the transition and to reach VIH/VIL(AC). For slew rates that fall between the values listed in Table 65 (page 107), the derating values may obtained by linear interpolation. Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V REF(DC) and the first crossing of V IH(AC)min. Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V REF(DC) and the first crossing of V IL(AC)max. If the actual signal is always earlier than the nominal slew rate line between the shaded V REF(DC)-to-AC region, use the nominal slew rate for derating value (see Figure 36 (page 111)). If the actual signal is later than the nominal slew rate line anywhere between the shaded V REF(DC)-to-AC region, the slew rate of a tangent line to the actual signal from the AC level to the DC level is used for derating value (see Figure 38 (page 113)). Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V IL(DC)max and the first crossing of V REF(DC). Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min and the first crossing of V REF(DC). If the actual signal is always later than the nominal slew rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for derating value (see Figure 37 (page 112)). If the actual signal is earlier than the nominal slew rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a tangent line to the actual signal from the DC-to-VREF(DC) region is used for derating value (see Figure 39 (page 114)). Table 63: DDR3 Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) - AC/DC-Based Symbol tDS tDS tDS tDH 800 1066 1333 1600 1866 2133 Unit Reference (base) AC175 75 25 - - - - ps VIH(AC)/VIL(AC) (base) AC150 125 75 30 10 - - ps VIH(AC)/VIL(AC) (base) AC135 165 115 60 40 68 53 ps VIH(AC)/VIL(AC) (base) DC100 150 100 65 45 70 55 ps VIH(DC)/VIL(DC) 1 1 1 1 2 2 V/ns Slew Rate Referenced PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 106 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Data Setup, Hold, and Derating Table 64: Derating Values for tDS/tDH - AC175/DC100-Based Shaded cells indicate slew rate combinations not supported tDS, tDH Derating (ps) - AC/DC-Based DQS, DQS# Differential Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns DQ Slew t t t t t t t t t t t t t t t Rate V/ns DS DH DS DH DS DH DS DH DS DH DS DH DS DH DS tDH 2.0 88 50 88 50 88 50 1.5 59 34 59 34 59 34 67 42 1.0 0 0 0 0 0 0 8 8 16 16 -2 -4 -2 -4 6 4 14 12 22 20 -6 -10 2 -2 10 6 18 14 26 24 -3 -8 5 0 13 8 21 18 29 34 -1 -10 7 -2 15 8 23 24 -11 -16 -2 -6 5 10 -30 -26 -22 -10 0.9 0.8 0.7 0.6 0.5 0.4 Table 65: Derating Values for tDS/tDH - AC150/DC100-Based Shaded cells indicate slew rate combinations not supported tDS, tDH Derating (ps) - AC/DC-Based DQS, DQS# Differential Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns DQ Slew Rate V/ns tDS tDH tDS tDH tDS tDH 2.0 75 50 75 50 75 50 1.5 50 34 50 34 50 1.0 0 0 0 0 0 0 -4 0.9 0.8 0.7 1.8 V/ns tDS tDH 34 58 42 0 8 0 -4 0 -10 tDH 8 16 16 8 4 16 8 -2 16 8 -8 0.6 0.5 0.4 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1.6 V/ns tDS 107 1.4 V/ns tDS tDH 12 24 20 6 24 14 1.2 V/ns tDS tDH 32 24 1.0 V/ns tDS tDH 16 0 24 8 32 18 40 34 15 -10 23 -2 31 8 39 24 14 -16 22 -6 30 10 7 -26 15 -10 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Data Setup, Hold, and Derating Table 66: Derating Values for tDS/tDH - AC135/DC100-Based at 1V/ns Shaded cells indicate slew rate combinations not supported tDS, tDH Derating (ps) - AC/DC-Based DQS, DQS# Differential Slew Rate 4.0 V/ns 3.0 V/ns 2.0 V/ns DQ Slew Rate V/ns tDS tDH tDS tDH tDS tDH 2.0 68 50 68 50 68 50 1.5 45 34 45 34 45 1.0 0 0 0 0 0 2 -4 0.9 0.8 0.7 1.8 V/ns tDS tDH 34 53 42 0 8 2 -4 3 -10 tDH 8 16 16 10 4 18 11 -2 19 14 -8 0.6 0.5 0.4 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1.6 V/ns tDS 108 1.4 V/ns tDS tDH 12 26 20 6 27 14 1.2 V/ns tDS tDH 35 24 1.0 V/ns tDS tDH 22 0 30 8 38 18 46 34 25 -19 33 -2 41 8 49 24 29 -16 37 -6 45 -10 30 26 38 -10 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Shaded cells indicate slew rate combinations not supported tDS, tDH Derating (ps) - AC/DC-Based DQ Slew Rate V/ns PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 67: Derating Values for tDS/tDH - AC135/DC100-Based at 2V/ns DQS, DQS# Differential Slew Rate 8.0 V/ns 7.0 V/ns 6.0 V/ns 5.0 V/ns 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH 4.0 34 25 34 25 34 25 3.5 29 21 29 21 29 21 29 21 3.0 23 17 23 17 23 17 23 17 23 17 14 10 14 10 14 10 14 10 14 10 0 0 0 0 0 0 0 0 0 0 -23 -17 -23 -17 -23 -17 -23 -17 -15 -19 -68 -50 -42 -30 2.5 2.0 1.5 1.0 109 0.9 0.8 0.7 0.5 0.4 -50 -68 -50 -60 -42 -52 -34 -54 -66 -54 -58 -46 -50 -38 -64 60 -56 -52 -48 -40 -40 -36 -32 -26 -53 -59 -45 -51 -37 -43 -29 -33 -21 -17 -43 -61 -35 -53 -27 -43 -19 -27 -39 -66 -31 -56 -23 -40 -38 -76 -30 -60 4Gb: x4, x8, x16 DDR3 SDRAM Data Setup, Hold, and Derating Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 0.6 -68 -66 4Gb: x4, x8, x16 DDR3 SDRAM Data Setup, Hold, and Derating Table 68: Required Minimum Time tVAC Above VIH(AC) (Below VIL(AC)) for Valid DQ Transition Slew Rate (V/ns) tVAC at 175mV (ps) DDR3-800/1066 tVAC tVAC at 150mV (ps) at 135mV (ps) DDR3-800/1066/1333/1600 DDR3-800/1066/1333/1600 DDR3-1866 >2.0 75 105 113 2.0 57 105 113 93 73 1.5 50 80 90 70 50 1.0 38 30 45 25 5 0.9 34 13 30 Note 1 Note 1 0.8 29 Note 1 11 Note 1 Note 1 0.7 Note 1 Note 1 Note 1 Note 1 Note 1 0.6 Note 1 Note 1 Note 1 Note 1 Note 1 0.5 Note 1 Note 1 Note 1 Note 1 Note 1 <0.5 Note 1 Note 1 Note 1 Note 1 Note 1 Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 93 DDR3-2133 73 1. Rising input signal shall become equal to or greater than VIH(ac) level and Falling input signal shall become equal to or less than VIL(ac) level. 110 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Data Setup, Hold, and Derating Figure 36: Nominal Slew Rate and tVAC for tDS (DQ - Strobe) CK CK# DQS# DQS tDS tDH tDS tDH VDDQ tVAC VIH(AC)min VREF to AC region VIH(DC)min Nominal slew rate VREF(DC) Nominal slew rate VIL(DC)max VREF to AC region VIL(AC)max tVAC VSS TF Setup slew rate = falling signal Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN TR VIH(AC)min - VREF(DC) Setup slew rate = rising signal TR VREF(DC) - VIL(AC)max TF 1. The clock and the strobe are drawn on different time scales. 111 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Data Setup, Hold, and Derating Figure 37: Nominal Slew Rate for tDH (DQ - Strobe) CK CK# DQS# DQS tDS tDH tDS tDH VDDQ VIH(AC)min VIH(DC)min Nominal slew rate DC to VREF region VREF(DC) Nominal slew rate DC to VREF region VIL(DC)max VIL(AC)max VSS TR VIL(DC)min - VREF(DC) Hold slew rate falling signal = TF VREF(DC) - VIL(DC)max Hold slew rate rising signal = TR Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN TF 1. The clock and the strobe are drawn on different time scales. 112 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Data Setup, Hold, and Derating Figure 38: Tangent Line for tDS (DQ - Strobe) CK CK# DQS# DQS tDS tDS tDH tDH VDDQ Nominal line tVAC VIH(AC)min VREF to AC region VIH(DC)min Tangent line VREF(DC) Tangent line VIL(DC)max VREF to AC region VIL(AC)max Nominal line TR tVAC VSS Setup slew rate Tangent line (VIH(AC)min - VREF(DC)) rising signal = TR TF Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Setup slew rate Tangent line (VREF(DC) - VIL(AC)max) falling signal = TF 1. The clock and the strobe are drawn on different time scales. 113 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Data Setup, Hold, and Derating Figure 39: Tangent Line for tDH (DQ - Strobe) CK CK# DQS# DQS tDS tDH tDS tDH VDDQ VIH(AC)min Nominal line VIH(DC)min DC to VREF region Tangent line VREF(DC) DC to VREF region Tangent line Nominal line VIL(DC)max VIL(AC)max VSS TR Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN TF Hold slew rate rising signal = Tangent line (VREF(DC) - VIL(DC)max) Hold slew rate falling signal = Tangent line (VIH(DC)min - VREF(DC)) TR TF 1. The clock and the strobe are drawn on different time scales. 114 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands - Truth Tables Commands - Truth Tables Table 69: Truth Table - Command Notes 1-5 apply to the entire table CKE Symbol Prev. Cycle MODE REGISTER SET MRS H H L L L L BA REFRESH REF H H L L L H V V V V V Self refresh entry SRE H L L L L H V V V V V 6 Self refresh exit SRX L H H V V V V V V V V 6, 7 L H H H V V L V V H V Function Single-bank PRECHARGE Next BA Cycle CS# RAS# CAS# WE# [2:0] An A12 A10 A[11, 9:0] Notes OP code PRE H H L L H L BA PRECHARGE all banks PREA H H L L H L V Bank ACTIVATE ACT H H L L H H BA WRITE BL8MRS, BC4MRS WR H H L H L L BA RFU V L CA 8 BC4OTF WRS4 H H L H L L BA RFU L L CA 8 BL8OTF WRS8 H H L H L L BA RFU H L CA 8 BL8MRS, BC4MRS WRAP H H L H L L BA RFU V H CA 8 BC4OTF WRAPS4 H H L H L L BA RFU L H CA 8 BL8OTF WRAPS8 H H L H L L BA RFU H H CA 8 BL8MRS, BC4MRS RD H H L H L H BA RFU V L CA 8 BC4OTF RDS4 H H L H L H BA RFU L L CA 8 BL8OTF RDS8 H H L H L H BA RFU H L CA 8 BL8MRS, BC4MRS RDAP H H L H L H BA RFU V H CA 8 BC4OTF RDAPS4 H H L H L H BA RFU L H CA 8 BL8OTF L H L H BA RFU H H CA 8 H H H V V V V V 9 WRITE with auto precharge READ READ with auto precharge Row address (RA) RDAPS8 H H NO OPERATION NOP H H Device DESELECTED DES H H H X X X X X X X X 10 Power-down entry PDE H L L H H H V V V V V 6 Power-down exit PDX L H V V V V V 6, 11 12 H V V V L H H H H V V V ZQ CALIBRATION LONG ZQCL H H L H H L X X X H X ZQ CALIBRATION SHORT ZQCS H H L H H L X X X L X Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. Commands are defined by the states of CS#, RAS#, CAS#, WE#, and CKE at the rising edge of the clock. The MSB of BA, RA, and CA are device-, density-, and configurationdependent. 115 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands - Truth Tables 2. RESET# is enabled LOW and used only for asynchronous reset. Thus, RESET# must be held HIGH during any normal operation. 3. The state of ODT does not affect the states described in this table. 4. Operations apply to the bank defined by the bank address. For MRS, BA selects one of four mode registers. 5. "V" means "H" or "L" (a defined logic level), and "X" means "Don't Care." 6. See Table 70 (page 117) for additional information on CKE transition. 7. Self refresh exit is asynchronous. 8. Burst READs or WRITEs cannot be terminated or interrupted. MRS (fixed) and OTF BL/BC are defined in MR0. 9. The purpose of the NOP command is to prevent the DRAM from registering any unwanted commands. A NOP will not terminate an operation that is executing. 10. The DES and NOP commands perform similarly. 11. The power-down mode does not perform any REFRESH operations. 12. ZQ CALIBRATION LONG is used for either ZQinit (first ZQCL command during initialization) or ZQoper (ZQCL command after initialization). PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 116 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands - Truth Tables Table 70: Truth Table - CKE Notes 1-2 apply to the entire table; see Table 69 (page 115) for additional command details CKE Current State3 Previous Cycle4 Present Cycle4 Command5 (n - 1) (n) (RAS#, CAS#, WE#, CS#) Power-down Action5 L L "Don't Care" Maintain power-down L H DES or NOP Power-down exit Self refresh L L "Don't Care" Maintain self refresh L H DES or NOP Self refresh exit Bank(s) active H L DES or NOP Active power-down entry Reading H L DES or NOP Power-down entry Writing H L DES or NOP Power-down entry Precharging H L DES or NOP Power-down entry Refreshing H L DES or NOP Precharge power-down entry All banks idle H L DES or NOP Precharge power-down entry H L REFRESH Self refresh Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Notes 6 1. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document. 2. tCKE (MIN) means CKE must be registered at multiple consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to achieve the required number of registration clocks. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + tCKE (MIN) + tIH. 3. Current state = The state of the DRAM immediately prior to clock edge n. 4. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the previous clock edge. 5. COMMAND is the command registered at the clock edge (must be a legal command as defined in Table 69 (page 115)). Action is a result of COMMAND. ODT does not affect the states described in this table and is not listed. 6. Idle state = All banks are closed, no data bursts are in progress, CKE is HIGH, and all timings from previous operations are satisfied. All self refresh exit and power-down exit parameters are also satisfied. 117 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands Commands DESELECT The DESELT (DES) command (CS# HIGH) prevents new commands from being executed by the DRAM. Operations already in progress are not affected. NO OPERATION The NO OPERATION (NOP) command (CS# LOW) prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. ZQ CALIBRATION LONG The ZQ CALIBRATION LONG (ZQCL) command is used to perform the initial calibration during a power-up initialization and reset sequence (see Figure 48 (page 134)). This command may be issued at any time by the controller, depending on the system environment. The ZQCL command triggers the calibration engine inside the DRAM. After calibration is achieved, the calibrated values are transferred from the calibration engine to the DRAM I/O, which are reflected as updated RON and ODT values. The DRAM is allowed a timing window defined by either tZQinit or tZQoper to perform a full calibration and transfer of values. When ZQCL is issued during the initialization sequence, the timing parameter tZQinit must be satisfied. When initialization is complete, subsequent ZQCL commands require the timing parameter tZQoper to be satisfied. ZQ CALIBRATION SHORT The ZQ CALIBRATION SHORT (ZQCS) command is used to perform periodic calibrations to account for small voltage and temperature variations. A shorter timing window is provided to perform the reduced calibration and transfer of values as defined by timing parameter tZQCS. A ZQCS command can effectively correct a minimum of 0.5% RON and RTT impedance error within 64 clock cycles, assuming the maximum sensitivities specified in Table 41 (page 65) and Table 42 (page 65). ACTIVATE The ACTIVATE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the BA[2:0] inputs selects the bank, and the address provided on inputs A[n:0] selects the row. This row remains open (or active) for accesses until a PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank. READ The READ command is used to initiate a burst read access to an active row. The address provided on inputs A[2:0] selects the starting column address, depending on the burst length and burst type selected (see Burst Order table for additional information). The value on input A10 determines whether auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the READ burst. If auto PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 118 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands precharge is not selected, the row will remain open for subsequent accesses. The value on input A12 (if enabled in the mode register) when the READ command is issued determines whether BC4 (chop) or BL8 is used. After a READ command is issued, the READ burst may not be interrupted. Table 71: READ Command Summary CKE Function READ READ with auto precharge Symbol Prev. Cycle Next BA Cycle CS# RAS# CAS# WE# [3:0] An A12 A10 A[11, 9:0] BL8MRS, BC4MRS RD H L H L H BA RFU V L CA BC4OTF RDS4 H L H L H BA RFU L L CA BL8OTF RDS8 H L H L H BA RFU H L CA BL8MRS, BC4MRS RDAP H L H L H BA RFU V H CA BC4OTF RDAPS4 H L H L H BA RFU L H CA BL8OTF RDAPS8 H L H L H BA RFU H H CA WRITE The WRITE command is used to initiate a burst write access to an active row. The value on the BA[2:0] inputs selects the bank. The value on input A10 determines whether auto precharge is used. The value on input A12 (if enabled in the MR) when the WRITE command is issued determines whether BC4 (chop) or BL8 is used. Input data appearing on the DQ is written to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered LOW, the corresponding data will be written to memory. If the DM signal is registered HIGH, the corresponding data inputs will be ignored and a WRITE will not be executed to that byte/column location. Table 72: WRITE Command Summary CKE Function WRITE WRITE with auto precharge Symbol Prev. Cycle Next BA Cycle CS# RAS# CAS# WE# [3:0] An A12 A10 A[11, 9:0] BL8MRS, BC4MRS WR H L H L L BA RFU V L CA BC4OTF WRS4 H L H L L BA RFU L L CA BL8OTF WRS8 H L H L L BA RFU H L CA BL8MRS, BC4MRS WRAP H L H L L BA RFU V H CA BC4OTF WRAPS4 H L H L L BA RFU L H CA BL8OTF WRAPS8 H L H L L BA RFU H H CA PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 119 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands PRECHARGE The PRECHARGE command is used to de-activate the open row in a particular bank or in all banks. The bank(s) are available for a subsequent row access a specified time ( tRP) after the PRECHARGE command is issued, except in the case of concurrent auto precharge. A READ or WRITE command to a different bank is allowed during a concurrent auto precharge as long as it does not interrupt the data transfer in the current bank and does not violate any other timing parameters. Input A10 determines whether one or all banks are precharged. In the case where only one bank is precharged, inputs BA[2:0] select the bank; otherwise, BA[2:0] are treated as "Don't Care." After a bank is precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command is treated as a NOP if there is no open row in that bank (idle state) or if the previously open row is already in the process of precharging. However, the precharge period is determined by the last PRECHARGE command issued to the bank. REFRESH The REFRESH command is used during normal operation of the DRAM and is analogous to CAS#-before-RAS# (CBR) refresh or auto refresh. This command is nonpersistent, so it must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits a "Don't Care" during a REFRESH command. The DRAM requires REFRESH cycles at an average interval of 7.8s (maximum when T C 85C or 3.9s maximum when T C 95C). The REFRESH period begins when the REFRESH command is registered and ends tRFC (MIN) later. To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of eight REFRESH commands can be posted to any given DRAM, meaning that the maximum absolute interval between any REFRESH command and the next REFRESH command is nine times the maximum average interval refresh rate. Self refresh may be entered with up to eight REFRESH commands being posted. After exiting self refresh (when entered with posted REFRESH commands), additional posting of REFRESH commands is allowed to the extent that the maximum number of cumulative posted REFRESH commands (both preand post-self refresh) does not exceed eight REFRESH commands. At any given time, a maximum of 16 REFRESH commands can be issued within 2 x tREFI. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 120 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands Figure 40: Refresh Mode T0 T2 T1 CK# CK tCK T3 tCH T4 Ta1 Valid 5 NOP1 PRE Tb0 Tb1 Valid 5 Valid 5 NOP5 NOP5 Tb2 tCL CKE Command Ta0 NOP1 NOP1 REF NOP5 REF2 Address ACT RA All banks A10 RA One bank BA[2:0] Bank(s)3 BA DQS, DQS#4 DQ4 DM4 tRP tRFC (MIN) tRFC2 Indicates break in time scale Notes: Don't Care 1. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. CKE must be active during the PRECHARGE, ACTIVATE, and REFRESH commands, but may be inactive at other times (see Power-Down Mode (page 182)). 2. The second REFRESH is not required, but two back-to-back REFRESH commands are shown. 3. "Don't Care" if A10 is HIGH at this point; however, A10 must be HIGH if more than one bank is active (must precharge all active banks). 4. For operations shown, DM, DQ, and DQS signals are all "Don't Care"/High-Z. 5. Only NOP and DES commands are allowed after a REFRESH command and until tRFC (MIN) is satisfied. SELF REFRESH The SELF REFRESH command is used to retain data in the DRAM, even if the rest of the system is powered down. When in self refresh mode, the DRAM retains data without external clocking. Self refresh mode is also a convenient method used to enable/disable the DLL as well as to change the clock frequency within the allowed synchronous operating range (see Input Clock Frequency Change (page 126)). All power supply inputs (including V REFCA and V REFDQ) must be maintained at valid levels upon entry/exit and during self refresh mode operation. V REFDQ may float or not drive V DDQ/2 while in self refresh mode under the following conditions: * * * * PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN VSS < V REFDQ < V DD is maintained VREFDQ is valid and stable prior to CKE going back HIGH The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid All other self refresh mode exit timing requirements are met 121 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands DLL Disable Mode If the DLL is disabled by the mode register (MR1[0] can be switched during initialization or later), the DRAM is targeted, but not guaranteed, to operate similarly to the normal mode, with a few notable exceptions: * The DRAM supports only one value of CAS latency (CL = 6) and one value of CAS WRITE latency (CWL = 6). * DLL disable mode affects the read data clock-to-data strobe relationship (tDQSCK), but not the read data-to-data strobe relationship (tDQSQ, tQH). Special attention is required to line up the read data with the controller time domain when the DLL is disabled. * In normal operation (DLL on), tDQSCK starts from the rising clock edge AL + CL cycles after the READ command. In DLL disable mode, tDQSCK starts AL + CL - 1 cycles after the READ command. Additionally, with the DLL disabled, the value of tDQSCK could be larger than tCK. The ODT feature (including dynamic ODT) is not supported during DLL disable mode. The ODT resistors must be disabled by continuously registering the ODT ball LOW by programming RTT,nom MR1[9, 6, 2] and RTT(WR) MR2[10, 9] to 0 while in the DLL disable mode. Specific steps must be followed to switch between the DLL enable and DLL disable modes due to a gap in the allowed clock rates between the two modes (tCK [AVG] MAX and tCK [DLL_DIS] MIN, respectively). The only time the clock is allowed to cross this clock rate gap is during self refresh mode. Thus, the required procedure for switching from the DLL enable mode to the DLL disable mode is to change frequency during self refresh: 1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT is turned off, and RTT,nom and RTT(WR) are High-Z), set MR1[0] to 1 to disable the DLL. 2. Enter self refresh mode after tMOD has been satisfied. 3. After tCKSRE is satisfied, change the frequency to the desired clock rate. 4. Self refresh may be exited when the clock is stable with the new frequency for tCKSRX. After tXS is satisfied, update the mode registers with appropriate values. 5. The DRAM will be ready for its next command in the DLL disable mode after the greater of tMRD or tMOD has been satisfied. A ZQCL command should be issued with appropriate timings met. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 122 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands Figure 41: DLL Enable Mode to DLL Disable Mode T0 T1 Ta0 Ta1 Tb0 Tc0 Td0 Td1 Te0 Te1 Tf0 CK# CK Valid1 CKE MRS2 Command 6 SRE3 NOP SRX4 NOP 7 tCKSRE tMOD tCKSRX8 NOP tXS MRS5 NOP Valid1 tMOD tCKESR ODT9 Valid1 Indicates break in time scale Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. Don't Care Any valid command. Disable DLL by setting MR1[0] to 1. Enter SELF REFRESH. Exit SELF REFRESH. Update the mode registers with the DLL disable parameters setting. Starting with the idle state, RTT is in the High-Z state. Change frequency. Clock must be stable tCKSRX. Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH. A similar procedure is required for switching from the DLL disable mode back to the DLL enable mode. This also requires changing the frequency during self refresh mode (see Figure 42 (page 124)). 1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT is turned off, and RTT,nom and RTT(WR) are High-Z), enter self refresh mode. 2. After tCKSRE is satisfied, change the frequency to the new clock rate. 3. Self refresh may be exited when the clock is stable with the new frequency for tCKSRX. After tXS is satisfied, update the mode registers with the appropriate values. At a minimum, set MR1[0] to 0 to enable the DLL. Wait tMRD, then set MR0[8] to 1 to enable DLL RESET. 4. After another tMRD delay is satisfied, update the remaining mode registers with the appropriate values. 5. The DRAM will be ready for its next command in the DLL enable mode after the greater of tMRD or tMOD has been satisfied. However, before applying any command or function requiring a locked DLL, a delay of tDLLK after DLL RESET must be satisfied. A ZQCL command should be issued with the appropriate timings met. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 123 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands Figure 42: DLL Disable Mode to DLL Enable Mode T0 Ta0 Ta1 Tb0 Tc0 Tc1 Td0 Te0 Tf0 Tg0 Th0 CK# CK CKE Valid tDLLK Command SRE1 NOP SRX2 NOP tCKSRE 7 8 tCKSRX9 MRS3 tXS MRS4 tMRD MRS5 Valid 6 tMRD ODTLoff + 1 x tCK tCKESR ODT10 Indicates break in time scale Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. Don't Care Enter SELF REFRESH. Exit SELF REFRESH. Wait tXS, then set MR1[0] to 0 to enable DLL. Wait tMRD, then set MR0[8] to 1 to begin DLL RESET. Wait tMRD, update registers (CL, CWL, and write recovery may be necessary). Wait tMOD, any valid command. Starting with the idle state. Change frequency. Clock must be stable at least tCKSRX. Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH. The clock frequency range for the DLL disable mode is specified by the parameter tCK (DLL_DIS). Due to latency counter and timing restrictions, only CL = 6 and CWL = 6 are supported. DLL disable mode will affect the read data clock to data strobe relationship (tDQSCK) but not the data strobe to data relationship (tDQSQ, tQH). Special attention is needed to line up read data to the controller time domain. Compared to the DLL on mode where tDQSCK starts from the rising clock edge AL + CL cycles after the READ command, the DLL disable mode tDQSCK starts AL + CL - 1 cycles after the READ command. WRITE operations function similarly between the DLL enable and DLL disable modes; however, ODT functionality is not allowed with DLL disable mode. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 124 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Commands Figure 43: DLL Disable tDQSCK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Address Valid CK# CK RL = AL + CL = 6 (CL = 6, AL = 0) CL = 6 DQS, DQS# DLL on DI b DQ BL8 DLL on RL (DLL_DIS) = AL + (CL - 1) = 5 DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 tDQSCK (DLL_DIS) MIN DQS, DQS# DLL off DI b DQ BL8 DLL disable DI b+1 tDQSCK DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 DI b+3 DI b+4 DI b+5 DI b+6 (DLL_DIS) MAX DQS, DQS# DLL off DI b DQ BL8 DLL disable DI b+1 DI b+2 DI b+7 Transitioning Data Don't Care Table 73: READ Electrical Characteristics, DLL Disable Mode Parameter Access window of DQS from CK, CK# PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Symbol tDQSCK 125 (DLL_DIS) Min Max Unit 1 10 ns Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Input Clock Frequency Change Input Clock Frequency Change When the DDR3 SDRAM is initialized, the clock must be stable during most normal states of operation. This means that after the clock frequency has been set to the stable state, the clock period is not allowed to deviate, except for what is allowed by the clock jitter and spread spectrum clocking (SSC) specifications. The input clock frequency can be changed from one stable clock rate to another under two conditions: self refresh mode and precharge power-down mode. It is illegal to change the clock frequency outside of those two modes. For the self refresh mode condition, when the DDR3 SDRAM has been successfully placed into self refresh mode and tCKSRE has been satisfied, the state of the clock becomes a "Don't Care." When the clock becomes a "Don't Care," changing the clock frequency is permissible if the new clock frequency is stable prior to tCKSRX. When entering and exiting self refresh mode for the sole purpose of changing the clock frequency, the self refresh entry and exit specifications must still be met. The precharge power-down mode condition is when the DDR3 SDRAM is in precharge power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a logic LOW or RTT,nom and RTT(WR) must be disabled via MR1 and MR2. This ensures RTT,nom and RTT(WR) are in an off state prior to entering precharge power-down mode, and CKE must be at a logic LOW. A minimum of tCKSRE must occur after CKE goes LOW before the clock frequency can change. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum operating frequency specified for the particular speed grade (tCK [AVG] MIN to tCK [AVG] MAX). During the input clock frequency change, CKE must be held at a stable LOW level. When the input clock frequency is changed, a stable clock must be provided to the DRAM tCKSRX before precharge power-down may be exited. After precharge power-down is exited and tXP has been satisfied, the DLL must be reset via the MRS. Depending on the new clock frequency, additional MRS commands may need to be issued. During the DLL lock time, RTT,nom and RTT(WR) must remain in an off state. After the DLL lock time, the DRAM is ready to operate with a new clock frequency. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 126 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Input Clock Frequency Change Figure 44: Change Frequency During Precharge Power-Down Previous clock frequency T0 T1 T2 New clock frequency Ta0 Tb0 Tc1 Tc0 Td0 Td1 Te0 Te1 CK# CK tCH tCH b tCL tCKSRE tIS tCL b tCH b tCK b tCL b tCK b tCKSRX tCKE tIH CKE tIS tCPDED Command tCH b tCK b tCK tIH tCL b NOP NOP NOP NOP NOP Address MRS NOP Valid DLL RESET tAOFPD/tAOF tXP Valid tIH tIS ODT DQS, DQS# High-Z DQ High-Z DM tDLLK Enter precharge power-down mode Frequency change Exit precharge power-down mode Indicates break in time scale Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Don't Care 1. Applicable for both SLOW-EXIT and FAST-EXIT precharge power-down modes. 2. tAOFPD and tAOF must be satisfied and outputs High-Z prior to T1 (see On-Die Termination (ODT) (page 192) for exact requirements). 3. If the RTT,nom feature was enabled in the mode register prior to entering precharge power-down mode, the ODT signal must be continuously registered LOW, ensuring RTT is in an off state. If the RTT,nom feature was disabled in the mode register prior to entering precharge power-down mode, RTT will remain in the off state. The ODT signal can be registered LOW or HIGH in this case. 127 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Write Leveling Write Leveling For better signal integrity, DDR3 SDRAM memory modules have adopted fly-by topology for the commands, addresses, control signals, and clocks. Write leveling is a scheme for the memory controller to adjust or de-skew the DQS strobe (DQS, DQS#) to CK relationship at the DRAM with a simple feedback feature provided by the DRAM. Write leveling is generally used as part of the initialization process, if required. For normal DRAM operation, this feature must be disabled. This is the only DRAM operation where the DQS functions as an input (to capture the incoming clock) and the DQ function as outputs (to report the state of the clock). Note that nonstandard ODT schemes are required. The memory controller using the write leveling procedure must have adjustable delay settings on its DQS strobe to align the rising edge of DQS to the clock at the DRAM pins. This is accomplished when the DRAM asynchronously feeds back the CK status via the DQ bus and samples with the rising edge of DQS. The controller repeatedly delays the DQS strobe until a CK transition from 0 to 1 is detected. The DQS delay established by this procedure helps ensure tDQSS, tDSS, and tDSH specifications in systems that use fly-by topology by de-skewing the trace length mismatch. A conceptual timing of this procedure is shown in Figure 45. Figure 45: Write Leveling Concept T0 T1 T2 T3 T5 T4 T6 T7 CK# CK Source Differential DQS Tn T0 T1 T2 T3 T4 T5 T6 T4 T5 T6 CK# CK Destination Differential DQS 0 DQ Destination Tn T0 T1 0 T2 T3 CK# CK Push DQS to capture 0-1 transition Differential DQS DQ 1 1 Don't Care PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 128 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Write Leveling When write leveling is enabled, the rising edge of DQS samples CK, and the prime DQ outputs the sampled CK's status. The prime DQ for a x4 or x8 configuration is DQ0 with all other DQ (DQ[7:1]) driving LOW. The prime DQ for a x16 configuration is DQ0 for the lower byte and DQ8 for the upper byte. It outputs the status of CK sampled by LDQS and UDQS. All other DQ (DQ[7:1], DQ[15:9]) continue to drive LOW. Two prime DQ on a x16 enable each byte lane to be leveled independently. The write leveling mode register interacts with other mode registers to correctly configure the write leveling functionality. Besides using MR1[7] to disable/enable write leveling, MR1[12] must be used to enable/disable the output buffers. The ODT value, burst length, and so forth need to be selected as well. This interaction is shown in Table 74. It should also be noted that when the outputs are enabled during write leveling mode, the DQS buffers are set as inputs, and the DQ are set as outputs. Additionally, during write leveling mode, only the DQS strobe terminations are activated and deactivated via the ODT ball. The DQ remain disabled and are not affected by the ODT ball. Table 74: Write Leveling Matrix Note 1 applies to the entire table MR1[7] MR1[12] MR1[2, 6, 9] Write Leveling Output Buffers RTT,nom Value Disabled Enabled (1) DRAM RTT,nom DRAM ODT Ball DQS DQ See normal operations Disabled (1) Write leveling not enabled 0 DQS not receiving: not terminated Prime DQ High-Z: not terminated Other DQ High-Z: not terminated 1 Low Off , or 120 High On DQS not receiving: terminated by RTT Prime DQ High-Z: not terminated Other DQ High-Z: not terminated 2 n/a Low Off DQS receiving: not terminated Prime DQ driving CK state: not terminated Other DQ driving LOW: not terminated 3 , or 120 High On DQS receiving: terminated by RTT Prime DQ driving CK state: not terminated Other DQ driving LOW: not terminated 4 Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Case Notes n/a Enabled (0) Off DRAM State 2 3 1. Expected usage if used during write leveling: Case 1 may be used when DRAM are on a dual-rank module and on the rank not being leveled or on any rank of a module not being leveled on a multislot system. Case 2 may be used when DRAM are on any rank of a module not being leveled on a multislot system. Case 3 is generally not used. Case 4 is generally used when DRAM are on the rank that is being leveled. 2. Since the DRAM DQS is not being driven (MR1[12] = 1), DQS ignores the input strobe, and all RTT,nom values are allowed. This simulates a normal standby state to DQS. 3. Since the DRAM DQS is being driven (MR1[12] = 0), DQS captures the input strobe, and only some RTT,nom values are allowed. This simulates a normal write state to DQS. 129 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Write Leveling Write Leveling Procedure A memory controller initiates the DRAM write leveling mode by setting MR1[7] to 1, assuming the other programable features (MR0, MR1, MR2, and MR3) are first set and the DLL is fully reset and locked. The DQ balls enter the write leveling mode going from a High-Z state to an undefined driving state, so the DQ bus should not be driven. During write leveling mode, only the NOP or DES commands are allowed. The memory controller should attempt to level only one rank at a time; thus, the outputs of other ranks should be disabled by setting MR1[12] to 1 in the other ranks. The memory controller may assert ODT after a tMOD delay, as the DRAM will be ready to process the ODT transition. ODT should be turned on prior to DQS being driven LOW by at least ODTLon delay (WL - 2 tCK), provided it does not violate the aforementioned tMOD delay requirement. The memory controller may drive DQS LOW and DQS# HIGH after tWLDQSEN has been satisfied. The controller may begin to toggle DQS after tWLMRD (one DQS toggle is DQS transitioning from a LOW state to a HIGH state with DQS# transitioning from a HIGH state to a LOW state, then both transition back to their original states). At a minimum, ODTLon and tAON must be satisfied at least one clock prior to DQS toggling. After tWLMRD and a DQS LOW preamble (tWPRE) have been satisfied, the memory controller may provide either a single DQS toggle or multiple DQS toggles to sample CK for a given DQS-to-CK skew. Each DQS toggle must not violate tDQSL (MIN) and tDQSH (MIN) specifications. tDQSL (MAX) and tDQSH (MAX) specifications are not applicable during write leveling mode. The DQS must be able to distinguish the CK's rising edge within tWLS and tWLH. The prime DQ will output the CK's status asynchronously from the associated DQS rising edge CK capture within tWLO. The remaining DQ that always drive LOW when DQS is toggling must be LOW within tWLOE after the first tWLO is satisfied (the prime DQ going LOW). As previously noted, DQS is an input and not an output during this process. Figure 46 (page 131) depicts the basic timing parameters for the overall write leveling procedure. The memory controller will most likely sample each applicable prime DQ state and determine whether to increment or decrement its DQS delay setting. After the memory controller performs enough DQS toggles to detect the CK's 0-to-1 transition, the memory controller should lock the DQS delay setting for that DRAM. After locking the DQS setting is locked, leveling for the rank will have been achieved, and the write leveling mode for the rank should be disabled or reprogrammed (if write leveling of another rank follows). PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 130 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Write Leveling Figure 46: Write Leveling Sequence T1 T2 tWLS tWLH CK# CK Command MRS1 NOP2 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP tMOD ODT tWLDQSEN tDQSL3 tDQSH3 tDQSL3 tDQSH3 Differential DQS4 tWLMRD tWLO tWLO Prime DQ5 tWLO tWLOE Early remaining DQ tWLO Late remaining DQ Indicates break in time scale Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Undefined Driving Mode Don't Care 1. MRS: Load MR1 to enter write leveling mode. 2. NOP: NOP or DES. 3. DQS, DQS# needs to fulfill minimum pulse width requirements tDQSH (MIN) and tDQSL (MIN) as defined for regular writes. The maximum pulse width is system-dependent. 4. Differential DQS is the differential data strobe (DQS, DQS#). Timing reference points are the zero crossings. The solid line represents DQS; the dotted line represents DQS#. 5. DRAM drives leveling feedback on a prime DQ (DQ0 for x4 and x8). The remaining DQ are driven LOW and remain in this state throughout the leveling procedure. 131 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Write Leveling Write Leveling Mode Exit Procedure After the DRAM are leveled, they must exit from write leveling mode before the normal mode can be used. Figure 47 depicts a general procedure for exiting write leveling mode. After the last rising DQS (capturing a 1 at T0), the memory controller should stop driving the DQS signals after tWLO (MAX) delay plus enough delay to enable the memory controller to capture the applicable prime DQ state (at ~Tb0). The DQ balls become undefined when DQS no longer remains LOW, and they remain undefined until tMOD after the MRS command (at Te1). The ODT input should be de-asserted LOW such that ODTLoff (MIN) expires after the DQS is no longer driving LOW. When ODT LOW satisfies tIS, ODT must be kept LOW (at ~Tb0) until the DRAM is ready for either another rank to be leveled or until the normal mode can be used. After DQS termination is switched off, write level mode should be disabled via the MRS command (at Tc2). After tMOD is satisfied (at Te1), any valid command may be registered by the DRAM. Some MRS commands may be issued after tMRD (at Td1). Figure 47: Write Leveling Exit Procedure T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Tc2 NOP NOP NOP NOP NOP NOP NOP MRS Td0 Td1 Te0 Te1 NOP Valid NOP Valid CK# CK Command tMRD Address MR1 tIS Valid Valid tMOD ODT t ODTLoff AOF (MIN) RTT,nom RTT DQS, RTT DQS# t AOF (MAX) DQS, DQS# RTT(DQ) tWLO DQ + tWLOE CK = 1 Indicates break in time scale Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Undefined Driving Mode Transitioning Don't Care 1. The DQ result, = 1, between Ta0 and Tc0, is a result of the DQS, DQS# signals capturing CK HIGH just after the T0 state. 132 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Initialization Initialization The following sequence is required for power-up and initialization, as shown in Figure 48 (page 134): 1. Apply power. RESET# is recommended to be below 0.2 x V DDQ during power ramp to ensure the outputs remain disabled (High-Z) and ODT off (RTT is also High-Z). All other inputs, including ODT, may be undefined. During power-up, either of the following conditions may exist and must be met: 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN * Condition A: - VDD and V DDQ are driven from a single-power converter output and are ramped with a maximum delta voltage between them of V 300mV. Slope reversal of any power supply signal is allowed. The voltage levels on all balls other than V DD, V DDQ, V SS, V SSQ must be less than or equal to V DDQ and V DD on one side, and must be greater than or equal to V SSQ and V SS on the other side. - Both V DD and V DDQ power supplies ramp to V DD,min and V DDQ,min within tV DDPR = 200ms. - VREFDQ tracks V DD x 0.5, V REFCA tracks V DD x 0.5. - VTT is limited to 0.95V when the power ramp is complete and is not applied directly to the device; however, tVTD should be greater than or equal to 0 to avoid device latchup. * Condition B: - VDD may be applied before or at the same time as V DDQ. - VDDQ may be applied before or at the same time as V TT, V REFDQ, and V REFCA. - No slope reversals are allowed in the power supply ramp for this condition. Until stable power, maintain RESET# LOW to ensure the outputs remain disabled (High-Z). After the power is stable, RESET# must be LOW for at least 200s to begin the initialization process. ODT will remain in the High-Z state while RESET# is LOW and until CKE is registered HIGH. CKE must be LOW 10ns prior to RESET# transitioning HIGH. After RESET# transitions HIGH, wait 500s (minus one clock) with CKE LOW. After the CKE LOW time, CKE may be brought HIGH (synchronously) and only NOP or DES commands may be issued. The clock must be present and valid for at least 10ns (and a minimum of five clocks) and ODT must be driven LOW at least tIS prior to CKE being registered HIGH. When CKE is registered HIGH, it must be continuously registered HIGH until the full initialization process is complete. After CKE is registered HIGH and after tXPR has been satisfied, MRS commands may be issued. Issue an MRS (LOAD MODE) command to MR2 with the applicable settings (provide LOW to BA2 and BA0 and HIGH to BA1). Issue an MRS command to MR3 with the applicable settings. Issue an MRS command to MR1 with the applicable settings, including enabling the DLL and configuring ODT. Issue an MRS command to MR0 with the applicable settings, including a DLL RESET command. tDLLK (512) cycles of clock input are required to lock the DLL. Issue a ZQCL command to calibrate RTT and RON values for the process voltage temperature (PVT). Prior to normal operation, tZQinit must be satisfied. When tDLLK and tZQinit have been satisfied, the DDR3 SDRAM will be ready for normal operation. 133 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Initialization Figure 48: Initialization Sequence T (MAX) = 200ms VDD VDDQ VTT See power-up conditions in the initialization sequence text, set up 1 VREF Power-up ramp tVTD Stable and valid clock T0 T1 tCK Tc0 Tb0 Ta0 Td0 CK# CK tCKSRX tIOZ tCL tCL = 20ns RESET# tIS T (MIN) = 10ns CKE Valid ODT Valid tIS NOP Command MRS MRS MRS MRS Address Code Code Code Code A10 Code Code Code Code BA0 = L BA1 = H BA2 = L BA0 = H BA1 = H BA2 = L BA0 = H BA1 = L BA2 = L BA0 = L BA1 = L BA2 = L ZQCL Valid DM BA[2:0] Valid Valid A10 = H Valid DQS DQ RTT T = 200s (MIN) T = 500s (MIN) tXPR MR2 All voltage supplies valid and stable tMRD tMRD MR3 tMRD MR1 with DLL enable tMOD MR0 with DLL reset tZQinit ZQ calibration tDLLK DRAM ready for external commands Normal operation Indicates break in time scale PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 134 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Registers Mode Registers Mode registers (MR0-MR3) are used to define various modes of programmable operations of the DDR3 SDRAM. A mode register is programmed via the mode register set (MRS) command during initialization, and it retains the stored information (except for MR0[8], which is self-clearing) until it is reprogrammed, RESET# goes LOW, the device loses power. Contents of a mode register can be altered by re-executing the MRS command. Even if the user wants to modify only a subset of the mode register's variables, all variables must be programmed when the MRS command is issued. Reprogramming the mode register will not alter the contents of the memory array, provided it is performed correctly. The MRS command can only be issued (or re-issued) when all banks are idle and in the precharged state (tRP is satisfied and no data bursts are in progress). After an MRS command has been issued, two parameters must be satisfied: tMRD and tMOD. The controller must wait tMRD before initiating any subsequent MRS commands. Figure 49: MRS to MRS Command Timing (tMRD) T0 T1 T2 Ta0 Ta1 Ta2 MRS1 NOP NOP NOP NOP MRS2 CK# CK Command tMRD Address Valid Valid CKE3 Indicates break in time scale Notes: Don't Care 1. Prior to issuing the MRS command, all banks must be idle and precharged, tRP (MIN) must be satisfied, and no data bursts can be in progress. 2. tMRD specifies the MRS to MRS command minimum cycle time. 3. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN) (see Power-Down Mode (page 182)). 4. For a CAS latency change, tXPDLL timing must be met before any non-MRS command. The controller must also wait tMOD before initiating any non-MRS commands (excluding NOP and DES). The DRAM requires tMOD in order to update the requested features, with the exception of DLL RESET, which requires additional time. Until tMOD has been satisfied, the updated features are to be assumed unavailable. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 135 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 0 (MR0) Figure 50: MRS to nonMRS Command Timing (tMOD) T0 T1 T2 Ta0 Ta1 Ta2 MRS NOP NOP NOP NOP non MRS CK# CK Command tMOD Address Valid Valid Valid CKE Old setting New setting Updating setting Indicates break in time scale Notes: Don't Care 1. Prior to issuing the MRS command, all banks must be idle (they must be precharged, tRP must be satisfied, and no data bursts can be in progress). 2. Prior to Ta2 when tMOD (MIN) is being satisfied, no commands (except NOP/DES) may be issued. 3. If RTT was previously enabled, ODT must be registered LOW at T0 so that ODTL is satisfied prior to Ta1. ODT must also be registered LOW at each rising CK edge from T0 until tMODmin is satisfied at Ta2. 4. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN), at which time power-down may occur (see Power-Down Mode (page 182)). Mode Register 0 (MR0) The base register, MR0, is used to define various DDR3 SDRAM modes of operation. These definitions include the selection of a burst length, burst type, CAS latency, operating mode, DLL RESET, write recovery, and precharge power-down mode, as shown in Figure 51 (page 137). Burst Length Burst length is defined by MR0[1: 0]. Read and write accesses to the DDR3 SDRAM are burst-oriented, with the burst length being programmable to 4 (chop mode), 8 (fixed), or selectable using A12 during a READ/WRITE command (on-the-fly). The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. When MR0[1:0] is set to 01 during a READ/WRITE command, if A12 = 0, then BC4 (chop) mode is selected. If A12 = 1, then BL8 mode is selected. Specific timing diagrams, and turnaround between READ/WRITE, are shown in the READ/WRITE sections of this document. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A[i:2] when the burst length is set to 4 and by A[i:3] when the burst length is set to 8 (where Ai is the most significant column address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the start- PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 136 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 0 (MR0) ing location within the block. The programmed burst length applies to both READ and WRITE bursts. Figure 51: Mode Register 0 (MR0) Definitions BA2 BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus 16 15 14 13 12 11 10 0 0 01 PD WR Mode register 0 (MR0) 9 01 M15 M14 8 7 6 5 4 3 2 DLL 01 CAS# latency BT CL 1 0 BL M1 M0 Mode Register Burst Length 0 0 Fixed BL8 0 1 4 or 8 (on-the-fly via A12) 0 0 Mode register 0 (MR0) 0 1 Mode register 1 (MR1) M12 Precharge PD 1 0 Mode register 2 (MR2) 0 DLL off (slow exit) 0 No 1 0 Fixed BC4 (chop) 1 1 Mode register 3 (MR3) 1 DLL on (fast exit) 1 Yes 1 1 Reserved M11 M10 M9 Write Recovery M8 DLL Reset CAS Latency M3 0 0 0 16 M6 M5 M4 M2 0 0 0 0 Reserved 0 Sequential (nibble) READ Burst Type 0 0 1 5 0 0 1 0 5 1 Interleaved 0 1 0 6 0 1 0 0 6 0 1 1 7 0 1 1 0 7 1 0 0 8 1 0 0 0 8 1 0 1 10 1 0 1 0 9 1 1 0 12 1 1 0 0 10 1 1 1 14 1 1 1 0 11 0 0 0 1 12 0 0 1 1 13 0 1 0 1 14 1. MR0[18, 15:13, 7] are reserved for future use and must be programmed to 0. Note: Burst Type Accesses within a given burst may be programmed to either a sequential or an interleaved order. The burst type is selected via MR0[3] (see Figure 51 (page 137)). The ordering of accesses within a burst is determined by the burst length, the burst type, and the starting column address. DDR3 only supports 4-bit burst chop and 8-bit burst access modes. Full interleave address ordering is supported for READs, while WRITEs are restricted to nibble (BC4) or word (BL8) boundaries. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 137 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 0 (MR0) Table 75: Burst Order Burst Length READ/ WRITE Starting Column Address (A[2, 1, 0]) Burst Type = Sequential (Decimal) Burst Type = Interleaved (Decimal) Notes 4 chop READ 000 0, 1, 2, 3, Z, Z, Z, Z 0, 1, 2, 3, Z, Z, Z, Z 1, 2 001 1, 2, 3, 0, Z, Z, Z, Z 1, 0, 3, 2, Z, Z, Z, Z 1, 2 010 2, 3, 0, 1, Z, Z, Z, Z 2, 3, 0, 1, Z, Z, Z, Z 1, 2 011 3, 0, 1, 2, Z, Z, Z, Z 3, 2, 1, 0, Z, Z, Z, Z 1, 2 100 4, 5, 6, 7, Z, Z, Z, Z 4, 5, 6, 7, Z, Z, Z, Z 1, 2 101 5, 6, 7, 4, Z, Z, Z, Z 5, 4, 7, 6, Z, Z, Z, Z 1, 2 110 6, 7, 4, 5, Z, Z, Z, Z 6, 7, 4, 5, Z, Z, Z, Z 1, 2 WRITE 8 READ WRITE Notes: 111 7, 4, 5, 6, Z, Z, Z, Z 7, 6, 5, 4, Z, Z, Z, Z 1, 2 0VV 0, 1, 2, 3, X, X, X, X 0, 1, 2, 3, X, X, X, X 1, 3, 4 1VV 4, 5, 6, 7, X, X, X, X 4, 5, 6, 7, X, X, X, X 1, 3, 4 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 1 001 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6 1 010 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5 1 011 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4 1 100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 1 101 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2 1 110 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1 1 111 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0 1 VVV 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 1, 3 1. Internal READ and WRITE operations start at the same point in time for BC4 as they do for BL8. 2. Z = Data and strobe output drivers are in tri-state. 3. V = A valid logic level (0 or 1), but the respective input buffer ignores level-on input pins. 4. X = "Don't Care." DLL RESET DLL RESET is defined by MR0[8] (see Figure 51 (page 137)). Programming MR0[8] to 1 activates the DLL RESET function. MR0[8] is self-clearing, meaning it returns to a value of 0 after the DLL RESET function has been initiated. Anytime the DLL RESET function is initiated, CKE must be HIGH and the clock held stable for 512 (tDLLK) clock cycles before a READ command can be issued. This is to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in invalid output timing specifications, such as tDQSCK timings. Write Recovery WRITE recovery time is defined by MR0[11:9] (see Figure 51 (page 137)). Write recovery values of 5, 6, 7, 8, 10, 12, or 14 may be used by programming MR0[11:9]. The user is PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 138 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 0 (MR0) required to program the correct value of write recovery and is calculated by dividing tWR (ns) by tCK (ns) and rounding up a noninteger value to the next integer: WR (cycles) = roundup (tWR [ns]/tCK [ns]). Precharge Power-Down (Precharge PD) The precharge PD bit applies only when precharge power-down mode is being used. When MR0[12] is set to 0, the DLL is off during precharge power-down providing a lower standby current mode; however, tXPDLL must be satisfied when exiting. When MR0[12] is set to 1, the DLL continues to run during precharge power-down mode to enable a faster exit of precharge power-down mode; however, tXP must be satisfied when exiting (see Power-Down Mode (page 182)). CAS Latency (CL) The CL is defined by MR0[6:4], as shown in Figure 51 (page 137). CAS latency is the delay, in clock cycles, between the internal READ command and the availability of the first bit of output data. The CL can be set to 5, 6, 7, 8, 9, 10, 11, 12, or 13. DDR3 SDRAM do not support half-clock latencies. Examples of CL = 6 and CL = 8 are shown below. If an internal READ command is registered at clock edge n, and the CAS latency is m clocks, the data will be available nominally coincident with clock edge n + m. on page through Table 51 (page 74) indicate the CLs supported at various operating frequencies. Figure 52: READ Latency T0 T1 T2 T3 T4 T5 T6 T7 T8 READ NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command AL = 0, CL = 6 DQS, DQS# DI n DQ DI n+1 DI n+2 DI n+3 DI n+4 T0 T1 T2 T3 T4 T5 T6 T7 T8 READ NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command AL = 0, CL = 8 DQS, DQS# DI n DQ Transitioning Data Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Don't Care 1. For illustration purposes, only CL = 6 and CL = 8 are shown. Other CL values are possible. 2. Shown with nominal tDQSCK and nominal tDSDQ. 139 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 1 (MR1) Mode Register 1 (MR1) The mode register 1 (MR1) controls additional functions and features not available in the other mode registers: Q OFF (OUTPUT DISABLE), TDQS (for the x8 configuration only), DLL ENABLE/DLL DISABLE, RTT_nom value (ODT), WRITE LEVELING, POSTED CAS ADDITIVE latency, and OUTPUT DRIVE STRENGTH. These functions are controlled via the bits shown in Figure 53 (page 140). The MR1 register is programmed via the MRS command and retains the stored information until it is reprogrammed, until RESET# goes LOW, or until the device loses power. Reprogramming the MR1 register will not alter the contents of the memory array, provided it is performed correctly. The MR1 register must be loaded when all banks are idle and no bursts are in progress. The controller must satisfy the specified timing parameters tMRD and tMOD before initiating a subsequent operation. Figure 53: Mode Register 1 (MR1) Definition BA2 BA1 BA0 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus 18 17 16 15 14 13 12 11 10 9 8 7 6 5 01 0 1 01 01 01 Q Off TDQS 01 RTT 01 WL RTT ODS M17 M16 4 3 AL 2 1 0 RTT ODS DLL Mode register 1 (MR1) Mode Register 0 0 Mode register set 0 (MR0) M12 Q Off M11 TDQS 0 1 Mode register set 1 (MR1) 0 Enabled 0 Disabled 1 0 Mode register set 2 (MR2) 1 Disabled 1 Enabled 1 1 Mode register set 3 (MR3) R TT,nom (ODT) 2 M0 DLL Enable 0 Enable (normal) 1 Disable M5 M1 Output Drive St rength R TT,nom (ODT) 3 M7 Write Levelization M9 M6 M2 Non- Writes Writes 0 0 0 0 R TT,nom disabled R TT,nom disabled 1 0 0 1 RZQ/4 (60 [NOM]) RZQ/4 (60 [NOM]) Disable (normal) Enable 0 0 RZQ/6 (40 [NOM]) 0 1 RZQ/7 (34 [NOM]) 1 0 Reserved 1 1 Reserved 0 1 0 RZQ/2 (120 [NOM]) RZQ/2 (120 [NOM]) 0 1 1 Notes: RZQ/6 (40 [NOM]) RZQ/6 (40 [NOM]) M4 M3 Additive Latency (AL) 1 0 0 RZQ/12 (20 [NOM]) n/a 0 0 Disabled (AL = 0) 1 0 1 RZQ/8 (30 [NOM]) n/a 0 1 AL = CL - 1 1 1 0 Reserved Reserved 1 0 AL = CL - 2 1 1 1 Reserved Reserved 1 1 Reserved 1. MR1[18, 15:13, 10, 8] are reserved for future use and must be programmed to 0. 2. During write leveling, if MR1[7] and MR1[12] are 1, then all RTT_nom values are available for use. 3. During write leveling, if MR1[7] is a 1, but MR1[12] is a 0, then only RTT_nom write values are available for use. DLL Enable/DLL Disable The DLL may be enabled or disabled by programming MR1[0] during the LOAD MODE command, as shown in Figure 53 (page 140). The DLL must be enabled for normal operation. DLL enable is required during power-up initialization and upon returning to normal operation after having disabled the DLL for the purpose of debugging or evaluation. Enabling the DLL should always be followed by resetting the DLL using the appropriate LOAD MODE command. If the DLL is enabled prior to entering self refresh mode, the DLL is automatically disabled when entering SELF REFRESH operation and is automatically reenabled and reset PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 140 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 1 (MR1) upon exit of SELF REFRESH operation. If the DLL is disabled prior to entering self refresh mode, the DLL remains disabled even upon exit of SELF REFRESH operation until it is reenabled and reset. The DRAM is not tested to check--nor does Micron warrant compliance with--normal mode timings or functionality when the DLL is disabled. An attempt has been made to have the DRAM operate in the normal mode where reasonably possible when the DLL has been disabled; however, by industry standard, a few known exceptions are defined: * ODT is not allowed to be used * The output data is no longer edge-aligned to the clock * CL and CWL can only be six clocks When the DLL is disabled, timing and functionality can vary from the normal operation specifications when the DLL is enabled (see on page ). Disabling the DLL also implies the need to change the clock frequency (see Input Clock Frequency Change (page 126)). Output Drive Strength The DDR3 SDRAM uses a programmable impedance output buffer. The drive strength mode register setting is defined by MR1[5, 1]. RZQ/7 (34 [NOM]) is the primary output driver impedance setting for DDR3 SDRAM devices. To calibrate the output driver impedance, an external precision resistor (RZQ) is connected between the ZQ ball and Vssq. The value of the resistor must be 240 r The output impedance is set during initialization. Additional impedance calibration updates do not affect device operation, and all data sheet timings and current specifications are met during an update. To meet the 34 specification, the output drive strength must be set to 34 during initialization. To obtain a calibrated output driver impedance after power-up, the DDR3 SDRAM needs a calibration command that is part of the initialization and reset procedure. OUTPUT ENABLE/DISABLE The OUTPUT ENABLE function is defined by MR1[12], as shown in Figure 53 (page 140). When enabled (MR1[12] = 0), all outputs (DQ, DQS, DQS#) function when in the normal mode of operation. When disabled (MR1[12] = 1), all DDR3 SDRAM outputs (DQ and DQS, DQS#) are tri-stated. The output disable feature is intended to be used during IDD characterization of the READ current and during tDQSS margining (write leveling) only. TDQS Enable Termination data strobe (TDQS) is a feature of the x8 DDR3 SDRAM configuration that provides termination resistance (RTT) and may be useful in some system configurations. TDQS is not supported in x4 or x16 configurations. When enabled via the mode register (MR1[11]), the RTT that is applied to DQS and DQS# is also applied to TDQS and TDQS#. In contrast to the RDQS function of DDR2 SDRAM, DDR3's TDQS provides the termination resistance RTT only. The OUTPUT DATA STROBE function of RDQS is not provided by TDQS; thus, R ON does not apply to TDQS and TDQS#. The TDQS and DM functions share the same ball. When the TDQS function is enabled via the mode register, the DM function is not supported. When the TDQS function is disabled, the DM function is provided, and the TDQS# ball is not used. The TDQS function is available in the x8 DDR3 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 141 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 1 (MR1) SDRAM configuration only and must be disabled via the mode register for the x4 and x16 configurations. On-Die Termination ODT resistance RTT_nom is defined by MR1[9, 6, 2] (see Figure 53 (page 140)). The R TT termination value applies to the DQ, DM, DQS, DQS#, and TDQS, TDQS# balls. DDR3 supports multiple RTT termination values based on RZQ/n where n can be 2, 4, 6, 8, or 12 and RZQ is 240 Unlike DDR2, DDR3 ODT must be turned off prior to reading data out and must remain off during a READ burst. RTT_nom termination is allowed any time after the DRAM is initialized, calibrated, and not performing read access, or when it is not in self refresh mode. Additionally, write accesses with dynamic ODT enabled (RTT(WR)) temporarily replaces RTT_nom with RTT(WR). The actual effective termination, RTT_eff, may be different from the RTT targeted due to nonlinearity of the termination. For RTT_eff values and calculations (see On-Die Termination (ODT) (page 192)). The ODT feature is designed to improve signal integrity of the memory channel by enabling the DDR3 SDRAM controller to independently turn on/off ODT for any or all devices. The ODT input control pin is used to determine when R TT is turned on (ODTL on) and off (ODTL off), assuming ODT has been enabled via MR1[9, 6, 2]. Timings for ODT are detailed in On-Die Termination (ODT) (page 192). WRITE LEVELING The WRITE LEVELING function is enabled by MR1[7], as shown in Figure 53 (page 140). Write leveling is used (during initialization) to deskew the DQS strobe to clock offset as a result of fly-by topology designs. For better signal integrity, DDR3 SDRAM memory modules adopted fly-by topology for the commands, addresses, control signals, and clocks. The fly-by topology benefits from a reduced number of stubs and their lengths. However, fly-by topology induces flight time skews between the clock and DQS strobe (and DQ) at each DRAM on the DIMM. Controllers will have a difficult time maintaining tDQSS, tDSS, and tDSH specifications without supporting write leveling in systems which use fly-by topology-based modules. Write leveling timing and detailed operation information is provided in Write Leveling (page 128). POSTED CAS ADDITIVE Latency POSTED CAS ADDITIVE latency (AL) is supported to make the command and data bus efficient for sustainable bandwidths in DDR3 SDRAM. MR1[4, 3] define the value of AL, as shown in Figure 54 (page 143). MR1[4, 3] enable the user to program the DDR3 SDRAM with AL = 0, CL - 1, or CL - 2. With this feature, the DDR3 SDRAM enables a READ or WRITE command to be issued after the ACTIVATE command for that bank prior to tRCD (MIN). The only restriction is ACTIVATE to READ or WRITE + AL tRCD (MIN) must be satisfied. Assuming tRCD (MIN) = CL, a typical application using this feature sets AL = CL - 1tCK = tRCD (MIN) - 1 tCK. The READ or WRITE command is held for the time of the AL before it is released internally to the DDR3 SDRAM device. READ latency (RL) is controlled by the sum of the AL and CAS latency (CL), RL = AL + CL. WRITE latency (WL) is the sum of CAS PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 142 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 2 (MR2) WRITE latency and AL, WL = AL + CWL (see Mode Register 2 (MR2) (page 143)). Examples of READ and WRITE latencies are shown in Figure 54 (page 143) and Figure 56 (page 144). Figure 54: READ Latency (AL = 5, CL = 6) BC4 T0 T1 T2 T6 T11 T12 T13 T14 ACTIVE n READ n NOP NOP NOP NOP NOP NOP CK# CK Command tRCD (MIN) DQS, DQS# AL = 5 CL = 6 DO n DQ DO n+1 DO n+2 DO n+3 RL = AL + CL = 11 Indicates break in time scale Transitioning Data Don't Care Mode Register 2 (MR2) The mode register 2 (MR2) controls additional functions and features not available in the other mode registers. These additional functions are CAS WRITE latency (CWL), AUTO SELF REFRESH (ASR), SELF REFRESH TEMPERATURE (SRT), and DYNAMIC ODT (RTT(WR)). These functions are controlled via the bits shown in Figure 55. The MR2 is programmed via the MRS command and will retain the stored information until it is programmed again or until the device loses power. Reprogramming the MR2 register will not alter the contents of the memory array, provided it is performed correctly. The MR2 register must be loaded when all banks are idle and no data bursts are in progress, and the controller must wait the specified time tMRD and tMOD before initiating a subsequent operation. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 143 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 2 (MR2) Figure 55: Mode Register 2 (MR2) Definition BA2 BA1 BA0 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus 18 17 16 15 14 13 12 11 10 9 8 7 6 0 01 01 01 01 01 RTT(WR) 01 SRT ASR Mode register 2 (MR2) 5 01 1 M17 M16 Mode Register 3 M5 M4 M3 2 1 0 01 01 01 CAS Write Latency (CWL) 5 CK (tCK 2.5ns) 6 CK (2.5ns > tCK 1.875ns) 0 0 Mode register set 0 (MR0) 0 Normal (0C to 85C) 0 0 0 0 1 Mode register set 1 (MR1) 1 Extended (85C to 95C) 0 0 1 1 0 Mode register set 2 (MR2) 0 1 0 7 CK (1.875ns > tCK 1.5ns) 1 1 Mode register set 3 (MR3) 0 1 1 1 0 0 8 CK (1.5ns > tCK 1.25ns) 9 CK (1.25ns > tCK 1.071ns) 1 0 1 10 CK (1.071ns > t CK 0.938ns) 1 1 0 Reserved 1 1 1 Reserved M10 M9 Note: M7 Self Refresh Temperature 4 CWL Dynamic ODT (R TT(WR) ) RTT(WR) disabled 0 0 0 1 RZQ/4 (60: [NOM]) 1 0 RZQ/2 (120: [NOM]) 1 1 M6 Auto Self Refresh (Optional) 0 Disabled: Manual 1 Enabled: Automatic Reserved 1. MR2[18, 15:11, 8, and 2:0] are reserved for future use and must all be programmed to 0. CAS Write Latency (CWL) CWL is defined by MR2[5:3] and is the delay, in clock cycles, from the releasing of the internal write to the latching of the first data in. CWL must be correctly set to the corresponding operating clock frequency (see Figure 55 (page 144)). The overall WRITE latency (WL) is equal to CWL + AL (Figure 53 (page 140)). Figure 56: CAS Write Latency T0 T1 ACTIVE n WRITE n T2 T6 T11 T12 T13 T14 NOP NOP NOP NOP NOP NOP CK# CK Command tRCD (MIN) DQS, DQS# AL = 5 CWL = 6 DI n DQ DI n+1 DI n+2 DI n+3 WL = AL + CWL = 11 Indicates break in time scale Transitioning Data Don't Care AUTO SELF REFRESH (ASR) Mode register MR2[6] is used to disable/enable the ASR function. When ASR is disabled, the self refresh mode's refresh rate is assumed to be at the normal 85C limit (sometimes referred to as 1x refresh rate). In the disabled mode, ASR requires the user to en- PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 144 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 2 (MR2) sure the DRAM never exceeds a T C of 85C while in self refresh unless the user enables the SRT feature listed below when the T C is between 85C and 95C. Enabling ASR assumes the DRAM self refresh rate is changed automatically from 1x to 2x when the case temperature exceeds 85C. This enables the user to operate the DRAM beyond the standard 85C limit up to the optional extended temperature range of 95C while in self refresh mode. The standard self refresh current test specifies test conditions to normal case temperature (85C) only, meaning if ASR is enabled, the standard self refresh current specifications do not apply (see Extended Temperature Usage (page 181)). SELF REFRESH TEMPERATURE (SRT) Mode register MR2[7] is used to disable/enable the SRT function. When SRT is disabled, the self refresh mode's refresh rate is assumed to be at the normal 85C limit (sometimes referred to as 1x refresh rate). In the disabled mode, SRT requires the user to ensure the DRAM never exceeds a T C of 85C while in self refresh mode unless the user enables ASR. When SRT is enabled, the DRAM self refresh is changed internally from 1x to 2x, regardless of the case temperature. This enables the user to operate the DRAM beyond the standard 85C limit up to the optional extended temperature range of 95C while in self refresh mode. The standard self refresh current test specifies test conditions to normal case temperature (85C) only, meaning if SRT is enabled, the standard self refresh current specifications do not apply (see Extended Temperature Usage (page 181)). SRT vs. ASR If the normal case temperature limit of 85C is not exceeded, then neither SRT nor ASR is required, and both can be disabled throughout operation. However, if the extended temperature option of 95C is needed, the user is required to provide a 2x refresh rate during (manual) refresh and to enable either the SRT or the ASR to ensure self refresh is performed at the 2x rate. SRT forces the DRAM to switch the internal self refresh rate from 1x to 2x. Self refresh is performed at the 2x refresh rate regardless of the case temperature. ASR automatically switches the DRAM's internal self refresh rate from 1x to 2x. However, while in self refresh mode, ASR enables the refresh rate to automatically adjust between 1x to 2x over the supported temperature range. One other disadvantage with ASR is the DRAM cannot always switch from a 1x to a 2x refresh rate at an exact case temperature of 85C. Although the DRAM will support data integrity when it switches from a 1x to a 2x refresh rate, it may switch at a lower temperature than 85C. Since only one mode is necessary, SRT and ASR cannot be enabled at the same time. DYNAMIC ODT The dynamic ODT (RTT(WR)) feature is defined by MR2[10, 9]. Dynamic ODT is enabled when a value is selected. This new DDR3 SDRAM feature enables the ODT termination value to change without issuing an MRS command, essentially changing the ODT termination on-the-fly. With dynamic ODT (RTT(WR)) enabled, the DRAM switches from normal ODT (RTT_nom) to dynamic ODT (RTT(WR)) when beginning a WRITE burst and subsequently switches PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 145 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 3 (MR3) back to ODT (RTT_nom) at the completion of the WRITE burst. If R TT_nom is disabled, the RTT_nom value will be High-Z. Special timing parameters must be adhered to when dynamic ODT (RTT(WR)) is enabled: ODTLcnw, ODTLcnw4, ODTLcnw8, ODTH4, ODTH8, and tADC. Dynamic ODT is only applicable during WRITE cycles. If ODT (R TT_nom) is disabled, dynamic ODT (RTT(WR)) is still permitted. RTT_nom and RTT(WR) can be used independent of one other. Dynamic ODT is not available during write leveling mode, regardless of the state of ODT (RTT_nom). For details on dynamic ODT operation, refer to On-Die Termination (ODT) (page 192). Mode Register 3 (MR3) The mode register 3 (MR3) controls additional functions and features not available in the other mode registers. Currently defined is the MULTIPURPOSE REGISTER (MPR). This function is controlled via the bits shown in Figure 57 (page 146). The MR3 is programmed via the LOAD MODE command and retains the stored information until it is programmed again or until the device loses power. Reprogramming the MR3 register will not alter the contents of the memory array, provided it is performed correctly. The MR3 register must be loaded when all banks are idle and no data bursts are in progress, and the controller must wait the specified time tMRD and tMOD before initiating a subsequent operation. Figure 57: Mode Register 3 (MR3) Definition BA2 BA1 BA0 A15 A14 A13 A12 A11 A10 A9 A8 18 17 16 1 1 01 A4 A3 A2 A1 A0 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 01 01 01 01 01 01 01 01 01 01 01 01 01 MPR MPR_RF 0 0 Mode register set (MR0) 0 MPR Enable Normal DRAM operations2 0 1 Mode register set 1 (MR1) 1 Dataflow from MPR 1 0 Mode register set 2 (MR2) 1 1 Mode register set 3 (MR3) M17 M16 Notes: A7 A6 A5 M2 Mode Register M1 M0 Address bus Mode register 3 (MR3) 0 0 MPR READ Function Predefined pattern3 0 1 Reserved 1 0 Reserved 1 1 Reserved 1. MR3[18 and 15:3] are reserved for future use and must all be programmed to 0. 2. When MPR control is set for normal DRAM operation, MR3[1, 0] will be ignored. 3. Intended to be used for READ synchronization. MULTIPURPOSE REGISTER (MPR) The MULTIPURPOSE REGISTER function is used to output a predefined system timing calibration bit sequence. Bit 2 is the master bit that enables or disables access to the MPR register, and bits 1 and 0 determine which mode the MPR is placed in. The basic concept of the multipurpose register is shown in Figure 58 (page 147). If MR3[2] is a 0, then the MPR access is disabled, and the DRAM operates in normal mode. However, if MR3[2] is a 1, then the DRAM no longer outputs normal read data but outputs MPR data as defined by MR3[0, 1]. If MR3[0, 1] is equal to 00, then a predefined read pattern for system calibration is selected. To enable the MPR, the MRS command is issued to MR3, and MR3[2] = 1. Prior to issuing the MRS command, all banks must be in the idle state (all banks are precharged, PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 146 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 3 (MR3) and tRP is met). When the MPR is enabled, any subsequent READ or RDAP commands are redirected to the multipurpose register. The resulting operation when either a READ or a RDAP command is issued, is defined by MR3[1:0] when the MPR is enabled (see Table 77 (page 148)). When the MPR is enabled, only READ or RDAP commands are allowed until a subsequent MRS command is issued with the MPR disabled (MR3[2] = 0). Power-down mode, self refresh, and any other nonREAD/RDAP commands are not allowed during MPR enable mode. The RESET function is supported during MPR enable mode. Figure 58: Multipurpose Register (MPR) Block Diagram Memory core MR3[2] = 0 (MPR off) Multipurpose register predefined data for READs MR3[2] = 1 (MPR on) DQ, DM, DQS, DQS# Notes: 1. A predefined data pattern can be read out of the MPR with an external READ command. 2. MR3[2] defines whether the data flow comes from the memory core or the MPR. When the data flow is defined, the MPR contents can be read out continuously with a regular READ or RDAP command. Table 76: MPR Functional Description of MR3 Bits MR3[2] MR3[1:0] MPR MPR READ Function Function 0 "Don't Care" Normal operation, no MPR transaction All subsequent READs come from the DRAM memory array All subsequent WRITEs go to the DRAM memory array 1 A[1:0] (see Table 77 (page 148)) Enable MPR mode, subsequent READ/RDAP commands defined by bits 1 and 2 MPR Functional Description The MPR JEDEC definition enables either a prime DQ (DQ0 on a x4 and a x8; on a x16, DQ0 = lower byte and DQ8 = upper byte) to output the MPR data with the remaining DQs driven LOW, or for all DQs to output the MPR data . The MPR readout supports fixed READ burst and READ burst chop (MRS and OTF via A12/BC#) with regular READ latencies and AC timings applicable, provided the DLL is locked as required. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 147 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 3 (MR3) MPR addressing for a valid MPR read is as follows: * A[1:0] must be set to 00 as the burst order is fixed per nibble * A2 selects the burst order: - BL8, A2 is set to 0, and the burst order is fixed to 0, 1, 2, 3, 4, 5, 6, 7 * For burst chop 4 cases, the burst order is switched on the nibble base along with the following: * * * * * * * - A2 = 0; burst order = 0, 1, 2, 3 - A2 = 1; burst order = 4, 5, 6, 7 Burst order bit 0 (the first bit) is assigned to LSB, and burst order bit 7 (the last bit) is assigned to MSB A[9:3] are a "Don't Care" A10 is a "Don't Care" A11 is a "Don't Care" A12: Selects burst chop mode on-the-fly, if enabled within MR0 A13 is a "Don't Care" BA[2:0] are a "Don't Care" MPR Register Address Definitions and Bursting Order The MPR currently supports a single data format. This data format is a predefined read pattern for system calibration. The predefined pattern is always a repeating 0-1 bit pattern. Examples of the different types of predefined READ pattern bursts are shown in the following figures. Table 77: MPR Readouts and Burst Order Bit Mapping MR3[2] MR3[1:0] Function 1 00 READ predefined pattern for system calibration 1 1 01 10 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN RFU RFU Burst Length Read A[2:0] BL8 000 Burst order: 0, 1, 2, 3, 4, 5, 6, 7 Predefined pattern: 0, 1, 0, 1, 0, 1, 0, 1 BC4 000 Burst order: 0, 1, 2, 3 Predefined pattern: 0, 1, 0, 1 BC4 100 Burst order: 4, 5, 6, 7 Predefined pattern: 0, 1, 0, 1 n/a n/a n/a n/a n/a n/a n/a n/a n/a n/a n/a n/a n/a n/a n/a n/a n/a n/a 148 Burst Order and Data Pattern Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 3 (MR3) Table 77: MPR Readouts and Burst Order Bit Mapping (Continued) MR3[2] MR3[1:0] Function Burst Length Read A[2:0] Burst Order and Data Pattern 1 11 RFU n/a n/a n/a n/a n/a n/a n/a n/a n/a Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 1. Burst order bit 0 is assigned to LSB, and burst order bit 7 is assigned to MSB of the selected MPR agent. 149 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 59: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout T0 Ta0 Tb0 Tb1 Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 PREA MRS READ1 NOP NOP NOP NOP NOP NOP NOP NOP MRS NOP NOP Valid CK# CK Command tRP tMPRR tMOD tMOD Bank address 3 Valid 3 A[1:0] 0 02 Valid A2 1 02 0 A[9:3] 00 Valid 00 0 Valid 0 A11 0 Valid 0 A12/BC# 0 Valid 1 0 A[15:13] 0 Valid 0 A10/AP 1 150 RL DQS, DQS# Indicates break in time scale Notes: 1. READ with BL8 either by MRS or OTF. 2. Memory controller must drive 0 on A[2:0]. Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 3 (MR3) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. DQ PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 60: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout T0 Ta Tb MRS READ1 Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 READ1 NOP NOP NOP NOP NOP NOP NOP NOP NOP Tc10 Td CK# CK Command PREA tRP tCCD tMOD MRS Bank address 3 Valid Valid 3 A[1:0] 0 02 02 Valid A2 1 02 12 0 A[9:3] 00 Valid Valid 00 0 Valid Valid 0 A11 0 Valid Valid 0 A12/BC# 0 Valid Valid 1 0 A[15:13] 0 Valid Valid 0 A10/AP 1 Valid tMOD tMPRR 151 RL DQS, DQS# DQ Indicates break in time scale Notes: 1. READ with BL8 either by MRS or OTF. 2. Memory controller must drive 0 on A[2:0]. Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 3 (MR3) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. RL PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 61: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 PREA MRS READ1 READ1 NOP NOP NOP NOP NOP NOP NOP Tc8 Tc9 MRS NOP Tc10 Td NOP Valid CK# CK Command tRF tMPRR tCCD tMOD tMOD Bank address 3 Valid Valid 3 A[1:0] 0 02 02 Valid A2 1 03 14 0 A[9:3] 00 Valid Valid 00 0 Valid Valid 0 A11 0 Valid Valid 0 A12/BC# 0 Valid 1 Valid 1 0 A[15:13] 0 Valid Valid 0 A10/AP 1 152 RL DQS, DQS# DQ Indicates break in time scale Notes: 1. 2. 3. 4. READ with BC4 either by MRS or OTF. Memory controller must drive 0 on A[1:0]. A2 = 0 selects lower 4 nibble bits 0 . . . 3. A2 = 1 selects upper 4 nibble bits 4 . . . 7. Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 3 (MR3) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. RL PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 62: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 PREA MRS READ1 READ1 NOP NOP NOP NOP NOP NOP NOP Tc8 Tc9 MRS NOP Tc10 Td NOP Valid CK# CK Command tRF tCCD tMOD tMPRR tMOD Bank address 3 Valid Valid 3 A[1:0] 0 02 02 Valid A2 1 13 04 0 A[9:3] 00 Valid Valid 00 0 Valid Valid 0 A11 0 Valid Valid 0 A12/BC# 0 Valid 1 Valid 1 0 A[15:13] 0 Valid Valid 0 A10/AP 1 153 RL DQS, DQS# DQ Indicates break in time scale Notes: 1. 2. 3. 4. READ with BC4 either by MRS or OTF. Memory controller must drive 0 on A[1:0]. A2 = 1 selects upper 4 nibble bits 4 . . . 7. A2 = 0 selects lower 4 nibble bits 0 . . . 3. Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM Mode Register 3 (MR3) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. RL 4Gb: x4, x8, x16 DDR3 SDRAM MODE REGISTER SET (MRS) Command MPR Read Predefined Pattern The predetermined read calibration pattern is a fixed pattern of 0, 1, 0, 1, 0, 1, 0, 1. The following is an example of using the read out predetermined read calibration pattern. The example is to perform multiple reads from the multipurpose register to do system level read timing calibration based on the predetermined and standardized pattern. The following protocol outlines the steps used to perform the read calibration: 1. Precharge all banks 2. After tRP is satisfied, set MRS, MR3[2] = 1 and MR3[1:0] = 00. This redirects all subsequent reads and loads the predefined pattern into the MPR. As soon as tMRD and tMOD are satisfied, the MPR is available 3. Data WRITE operations are not allowed until the MPR returns to the normal DRAM state 4. Issue a read with burst order information (all other address pins are "Don't Care"): 5. 6. 7. 8. * A[1:0] = 00 (data burst order is fixed starting at nibble) * A2 = 0 (for BL8, burst order is fixed as 0, 1, 2, 3, 4, 5, 6, 7) * A12 = 1 (use BL8) After RL = AL + CL, the DRAM bursts out the predefined read calibration pattern (0, 1, 0, 1, 0, 1, 0, 1) The memory controller repeats the calibration reads until read data capture at memory controller is optimized After the last MPR READ burst and after tMPRR has been satisfied, issue MRS, MR3[2] = 0, and MR3[1:0] = "Don't Care" to the normal DRAM state. All subsequent read and write accesses will be regular reads and writes from/to the DRAM array When tMRD and tMOD are satisfied from the last MRS, the regular DRAM commands (such as activate a memory bank for regular read or write access) are permitted MODE REGISTER SET (MRS) Command The mode registers are loaded via inputs BA[2:0], A[13:0]. BA[2:0] determine which mode register is programmed: * * * * BA2 = 0, BA1 = 0, BA0 = 0 for MR0 BA2 = 0, BA1 = 0, BA0 = 1 for MR1 BA2 = 0, BA1 = 1, BA0 = 0 for MR2 BA2 = 0, BA1 = 1, BA0 = 1 for MR3 The MRS command can only be issued (or re-issued) when all banks are idle and in the precharged state (tRP is satisfied and no data bursts are in progress). The controller must wait the specified time tMRD before initiating a subsequent operation such as an ACTIVATE command (see Figure 49 (page 135)). There is also a restriction after issuing an MRS command with regard to when the updated functions become available. This parameter is specified by tMOD. Both tMRD and tMOD parameters are shown in Figure 49 (page 135) and Figure 50 (page 136). Violating either of these requirements will result in unspecified operation. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 154 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM ZQ CALIBRATION Operation ZQ CALIBRATION Operation The ZQ CALIBRATION command is used to calibrate the DRAM output drivers (RON) and ODT values (RTT) over process, voltage, and temperature, provided a dedicated 240 (1%) external resistor is connected from the DRAM's ZQ ball to V SSQ. DDR3 SDRAM require a longer time to calibrate RON and ODT at power-up initialization and self refresh exit, and a relatively shorter time to perform periodic calibrations. DDR3 SDRAM defines two ZQ CALIBRATION commands: ZQCL and ZQCS. An example of ZQ calibration timing is shown below. All banks must be precharged and tRP must be met before ZQCL or ZQCS commands can be issued to the DRAM. No other activities (other than issuing another ZQCL or ZQCS command) can be performed on the DRAM channel by the controller for the duration of tZQinit or tZQoper. The quiet time on the DRAM channel helps accurately calibrate RON and ODT. After DRAM calibration is achieved, the DRAM should disable the ZQ ball's current consumption path to reduce power. ZQ CALIBRATION commands can be issued in parallel to DLL RESET and locking time. Upon self refresh exit, an explicit ZQCL is required if ZQ calibration is desired. In dual-rank systems that share the ZQ resistor between devices, the controller must not enable overlap of tZQinit, tZQoper, or tZQCS between ranks. Figure 63: ZQ CALIBRATION Timing (ZQCL and ZQCS) T0 T1 Ta0 Ta1 Ta2 Ta3 Tb0 Tb1 Tc0 Tc1 Tc2 ZQCL NOP NOP NOP Valid Valid ZQCS NOP NOP NOP Valid Address Valid Valid Valid A10 Valid Valid Valid CK# CK Command CKE 1 Valid Valid 1 Valid ODT 2 Valid Valid 2 Valid DQ 3 Activities 3 High-Z tZQinit or tZQoper High-Z tZQCS Indicates break in time scale Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Activities Don't Care 1. CKE must be continuously registered HIGH during the calibration procedure. 2. ODT must be disabled via the ODT signal or the MRS during the calibration procedure. 3. All devices connected to the DQ bus should be High-Z during calibration. 155 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM ACTIVATE Operation ACTIVATE Operation Before any READ or WRITE commands can be issued to a bank within the DRAM, a row in that bank must be opened (activated). This is accomplished via the ACTIVATE command, which selects both the bank and the row to be activated. After a row is opened with an ACTIVATE command, a READ or WRITE command may be issued to that row, subject to the tRCD specification. However, if the additive latency is programmed correctly, a READ or WRITE command may be issued prior to tRCD (MIN). In this operation, the DRAM enables a READ or WRITE command to be issued after the ACTIVATE command for that bank, but prior to tRCD (MIN) with the requirement that (ACTIVATE-to-READ/WRITE) + AL tRCD (MIN) (see Posted CAS Additive Latency). tRCD (MIN) should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVATE command on which a READ or WRITE command can be entered. The same procedure is used to convert other specification limits from time units to clock cycles. When at least one bank is open, any READ-to-READ command delay or WRITE-toWRITE command delay is restricted to tCCD (MIN). A subsequent ACTIVATE command to a different row in the same bank can only be issued after the previous active row has been closed (precharged). The minimum time interval between successive ACTIVATE commands to the same bank is defined by tRC. A subsequent ACTIVATE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVATE commands to different banks is defined by tRRD. No more than four bank ACTIVATE commands may be issued in a given tFAW (MIN) period, and the tRRD (MIN) restriction still applies. The tFAW (MIN) parameter applies, regardless of the number of banks already opened or closed. Figure 64: Example: Meeting tRRD (MIN) and tRCD (MIN) T0 T1 T2 T3 T4 T5 T8 T9 T10 T11 Command ACT NOP NOP ACT NOP NOP NOP NOP NOP RD/WR Address Row Row Col BA[2:0] Bank x Bank y Bank y CK# CK tRRD tRCD Indicates break in time scale PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 156 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM ACTIVATE Operation Figure 65: Example: tFAW CK# T0 T1 T4 T5 T8 T9 T10 T11 T19 T20 ACT NOP ACT NOP ACT NOP ACT NOP NOP ACT CK Command Address BA[2:0] Row Row Row Row Row Bank a Bank b Bank c Bank d Bank ey tRRD tFAW Indicates break in time scale PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 157 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation READ Operation READ bursts are initiated with a READ command. The starting column and bank addresses are provided with the READ command and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is automatically precharged at the completion of the burst. If auto precharge is disabled, the row will be left open after the completion of the burst. During READ bursts, the valid data-out element from the starting column address is available READ latency (RL) clocks later. RL is defined as the sum of posted CAS additive latency (AL) and CAS latency (CL) (RL = AL + CL). The value of AL and CL is programmable in the mode register via the MRS command. Each subsequent data-out element is valid nominally at the next positive or negative clock edge (that is, at the next crossing of CK and CK#). Figure 66 shows an example of RL based on a CL setting of 8 and an AL setting of 0. Figure 66: READ Latency T0 T7 T8 T9 T10 T11 T12 T12 READ NOP NOP NOP NOP NOP NOP NOP CK# CK Command Address Bank a, Col n CL = 8, AL = 0 DQS, DQS# DO n DQ Indicates break in time scale Notes: Transitioning Data Don't Care 1. DO n = data-out from column n. 2. Subsequent elements of data-out appear in the programmed order following DO n. DQS, DQS# is driven by the DRAM along with the output data. The initial LOW state on DQS and HIGH state on DQS# is known as the READ preamble (tRPRE). The LOW state on DQS and the HIGH state on DQS#, coincident with the last data-out element, is known as the READ postamble (tRPST). Upon completion of a burst, assuming no other commands have been initiated, the DQ goes High-Z. A detailed explanation of tDQSQ (valid data-out skew), tQH (data-out window hold), and the valid data window are depicted in Figure 77 (page 166). A detailed explanation of tDQSCK (DQS transition skew to CK) is also depicted in Figure 77 (page 166). Data from any READ burst may be concatenated with data from a subsequent READ command to provide a continuous flow of data. The first data element from the new burst follows the last element of a completed burst. The new READ command should be issued tCCD cycles after the first READ command. This is shown for BL8 in Figure 67 (page 160). If BC4 is enabled, tCCD must still be met, which will cause a gap in the data output, as shown in Figure 68 (page 160). Nonconsecutive READ data is reflected in PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 158 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation Figure 69 (page 161). DDR3 SDRAM does not allow interrupting or truncating any READ burst. Data from any READ burst must be completed before a subsequent WRITE burst is allowed. An example of a READ burst followed by a WRITE burst for BL8 is shown in Figure 70 (page 161) (BC4 is shown in Figure 71 (page 162)). To ensure the READ data is completed before the WRITE data is on the bus, the minimum READ-to-WRITE timing is RL + tCCD - WL + 2 tCK. A READ burst may be followed by a PRECHARGE command to the same bank, provided auto precharge is not activated. The minimum READ-to-PRECHARGE command spacing to the same bank is four clocks and must also satisfy a minimum analog time from the READ command. This time is called tRTP (READ-to-PRECHARGE). tRTP starts AL cycles later than the READ command. Examples for BL8 are shown in Figure 72 (page 162) and BC4 in Figure 73 (page 163). Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. The PRECHARGE command followed by another PRECHARGE command to the same bank is allowed. However, the precharge period will be determined by the last PRECHARGE command issued to the bank. If A10 is HIGH when a READ command is issued, the READ with auto precharge function is engaged. The DRAM starts an auto precharge operation on the rising edge, which is AL + tRTP cycles after the READ command. DRAM support a tRAS lockout feature (see Figure 75 (page 163)). If tRAS (MIN) is not satisfied at the edge, the starting point of the auto precharge operation will be delayed until tRAS (MIN) is satisfied. If tRTP (MIN) is not satisfied at the edge, the starting point of the auto precharge operation is delayed until tRTP (MIN) is satisfied. In case the internal precharge is pushed out by tRTP, tRP starts at the point at which the internal precharge happens (not at the next rising clock edge after this event). The time from READ with auto precharge to the next ACTIVATE command to the same bank is AL + (tRTP + tRP)*, where * means rounded up to the next integer. In any event, internal precharge does not start earlier than four clocks after the last 8n-bit prefetch. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 159 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 67: Consecutive READ Bursts (BL8) T0 T1 READ NOP T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command1 tCCD Address2 Bank, Col n Bank, Col b tRPRE tRPST DQS, DQS# DO n DQ3 RL = 5 DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 DO b DO b+1 DO b+2 DO b+3 DO b+4 DO b+5 DO b+6 DO b+7 RL = 5 Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ command at T0 and T4. 3. DO n (or b) = data-out from column n (or column b). 4. BL8, RL = 5 (CL = 5, AL = 0). Notes: 160 Figure 68: Consecutive READ Bursts (BC4) T1 READ NOP T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK Command1 tCCD Address2 Bank, Col n Bank, Col b tRPRE tRPST tRPRE tRPST DQS, DQS# DQ3 RL = 5 DO n DO n+1 DO n+2 DO n+3 DO b DO b+1 DO b+2 DO b+3 RL = 5 Transitioning Data Notes: Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BC4 setting is activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ command at T0 and T4. 3. DO n (or b) = data-out from column n (or column b). 4. BC4, RL = 5 (CL = 5, AL = 0). 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. T0 CK# PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 69: Nonconsecutive READ Bursts T0 T1 T2 T3 T4 READ NOP NOP NOP NOP T5 T6 T7 READ NOP T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command Address Bank a, Col n NOP NOP Bank a, Col b CL = 8 CL = 8 DQS, DQS# DO n DQ DO b Transitioning Data Notes: 1. 2. 3. 4. Don't Care AL = 0, RL = 8. DO n (or b) = data-out from column n (or column b). Seven subsequent elements of data-out appear in the programmed order following DO n. Seven subsequent elements of data-out appear in the programmed order following DO b. Figure 70: READ (BL8) to WRITE (BL8) 161 CK# T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 READ NOP NOP NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP CK Command1 tBL tWR = 4 clocks tWR Address2 Bank, Col n Bank, Col b tRPRE tRPST tWPRE tWPST DQS, DQS# DO n DQ3 RL = 5 DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 DI n DI n+1 DI DI n+2 n+3 DI n+4 DI n+5 DI n+6 Transitioning Data Notes: DI n+7 WL = 5 Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the READ command at T0, and the WRITE command at T6. 3. DO n = data-out from column, DI b = data-in for column b. 4. BL8, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5). 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. READ-to-WRITE command delay = RL + tCCD + 2tCK - WL PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 71: READ (BC4) to WRITE (BC4) OTF T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 READ NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command1 READ-to-WRITE command delay = RL + tCCD/2 + 2tCK - WL tBL tWR = 4 clocks tWTR Address2 Bank, Col n Bank, Col b tRPRE tRPST tWPRE tWPST DQS, DQS# DO n DQ3 RL = 5 DO n+ 1 DO n+ 2 DO n+3 DI n DI n+ 1 DI n+2 DI n+ 3 WL = 5 Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BC4 OTF setting is activated by MR0[1:0] and A12 = 0 during READ command at T0 and WRITE command at T4. 3. DO n = data-out from column n; DI n = data-in from column b. 4. BC4, RL = 5 (AL - 0, CL = 5), WL = 5 (AL = 0, CWL = 5). Notes: 162 T0 T1 T2 T3 T4 READ NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 T11 T12 PRE NOP NOP NOP NOP NOP NOP NOP T13 T14 T15 T16 T17 ACT NOP NOP NOP NOP CK# CK Command Address Bank a, Col n Bank a, (or all) Bank a, Row b tRTP tRP DQS, DQS# DO n DQ DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 tRAS Transitioning Data Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Figure 72: READ to PRECHARGE (BL8) PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 73: READ to PRECHARGE (BC4) CK# T0 T1 T2 T3 T4 READ NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 T11 T12 PRE NOP NOP NOP NOP NOP NOP NOP T13 T14 T15 T16 T17 ACT NOP NOP NOP NOP CK Command Address Bank a, Col n Bank a, (or all) Bank a, Row b tRP tRTP DQS, DQS# DO n DQ DO n+1 DO n+2 DO n+3 tRAS Transitioning Data Don't Care Figure 74: READ to PRECHARGE (AL = 5, CL = 6) T0 T1 T2 T3 T4 T5 T6 T7 T8 READ NOP NOP NOP NOP NOP NOP NOP NOP T9 T10 T11 T12 T13 T14 PRE NOP NOP NOP NOP NOP T15 CK# CK Command Address Bank a, Col n Bank a, (or all) tRTP AL = 5 ACT Bank a, Row b tRP DQS, DQS# 163 DO n DQ DO n+2 DO n+1 DO n+3 CL = 6 tRAS Transitioning Data Don't Care T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Address Bank a, Col n Ta0 CK# CK NOP ACT Bank a, Row b AL = 4 tRTP (MIN) DQS, DQS# DO n DQ DO n+1 DO n+2 DO n+3 CL = 6 tRAS tRP (MIN) Indicates break in time scale Transitioning Data Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Figure 75: READ with Auto Precharge (AL = 4, CL = 6) 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation DQS to DQ output timing is shown in Figure 76 (page 165). The DQ transitions between valid data outputs must be within tDQSQ of the crossing point of DQS, DQS#. DQS must also maintain a minimum HIGH and LOW time of tQSH and tQSL. Prior to the READ preamble, the DQ balls will either be floating or terminated, depending on the status of the ODT signal. Figure 77 (page 166) shows the strobe-to-clock timing during a READ. The crossing point DQS, DQS# must transition within tDQSCK of the clock crossing point. The data out has no timing relationship to CK, only to DQS, as shown in Figure 77 (page 166). Figure 77 (page 166) also shows the READ preamble and postamble. Typically, both DQS and DQS# are High-Z to save power (VDDQ). Prior to data output from the DRAM, DQS is driven LOW and DQS# is HIGH for tRPRE. This is known as the READ preamble. The READ postamble, tRPST, is one half clock from the last DQS, DQS# transition. During the READ postamble, DQS is driven LOW and DQS# is HIGH. When complete, the DQ is disabled or continues terminating, depending on the state of the ODT signal. on page demonstrates how to measure tRPST. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 164 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 76: Data Output Timing - tDQSQ and Data Valid Window CK# T0 T1 T2 READ NOP NOP T3 T4 T5 T6 T7 T8 T9 T10 NOP NOP NOP NOP NOP NOP NOP NOP CK Command1 RL = AL + CL Address2 Bank, Col n tDQSQ tDQSQ (MAX) tLZDQ (MIN) (MAX) tRPST tHZDQ (MAX) DQS, DQS# tRPRE tQH DQ3 (last data valid) DO n DO n DQ3 (first data no longer valid) tQH DO DO DO DO DO DO DO n+1 n+2 n+3 n+4 n+5 n+6 n+7 DO DO DO DO DO DO DO n+3 n+1 n+2 n+4 n+5 n+6 n+7 DO n All DQ collectively Data valid DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 Data valid Don't Care 165 Notes: 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1, 0] = 0, 0 or MR0[0, 1] = 0, 1 and A12 = 1 during READ command at T0. 3. DO n = data-out from column n. 4. BL8, RL = 5 (AL = 0, CL = 5). 5. Output timings are referenced to VDDQ/2 and DLL on and locked. 6. tDQSQ defines the skew between DQS, DQS# to data and does not define DQS, DQS# to CK. 7. Early data transitions may not always happen at the same DQ. Data transitions of a DQ can be early or late within a burst. 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level that specifies when the device output is no longer driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ. Figure 78 (page 167) shows a method of calculating the point when the device is no longer driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ, by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consistent. The parameters tLZDQS, tLZDQ, tHZDQS, and tHZDQ are defined as single-ended. Figure 77: Data Strobe Timing - READs RL measured to this point T0 T1 T2 T3 T4 T5 T6 CK CK# tDQSCK tLZDQS tDQSCK (MIN) (MIN) tQSH tDQSCK (MIN) tQSL tQSH tDQSCK (MIN) tHZDQS (MIN) (MIN) tQSL DQS, DQS# early strobe tRPST tRPRE Bit 0 tLZDQS Bit 1 tDQSCK (MAX) Bit 2 Bit 3 tDQSCK (MAX) Bit 4 Bit 5 tDQSCK (MAX) Bit 6 Bit 7 tDQSCK (MAX) tHZDQS (MAX) (MAX) tRPST DQS, DQS# late strobe tRPRE tQSH Bit 0 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN tQSL Bit 1 tQSH Bit 2 166 tQSL Bit 3 Bit 4 Bit 5 Bit 6 Bit 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation Figure 78: Method for Calculating tLZ and tHZ VOH - xmV VTT + 2xmV VOH - 2xmV VTT + xmV tLZDQS, tLZDQ tHZDQS, tHZDQ T2 T1 tHZDQS, tHZDQ VOL + 2xmV VTT - xmV VOL + xmV VTT - 2xmV T1 T2 tLZDQS, tLZDQ end point = 2 x T1 - T2 begin point = 2 x T1 - T2 1. Within a burst, the rising strobe edge is not necessarily fixed at tDQSCK (MIN) or tDQSCK (MAX). Instead, the rising strobe edge can vary between tDQSCK (MIN) and tDQSCK (MAX). 2. The DQS HIGH pulse width is defined by tQSH, and the DQS LOW pulse width is defined by tQSL. Likewise, tLZDQS (MIN) and tHZDQS (MIN) are not tied to tDQSCK (MIN) (early strobe case), and tLZDQS (MAX) and tHZDQS (MAX) are not tied to tDQSCK (MAX) (late strobe case); however, they tend to track one another. 3. The minimum pulse width of the READ preamble is defined by tRPRE (MIN). The minimum pulse width of the READ postamble is defined by tRPST (MIN). Notes: Figure 79: tRPRE Timing CK VTT CK# tA tB DQS VTT Single-ended signal provided as background information tC tD VTT DQS# Single-ended signal provided as background information T1 begins tRPRE DQS - DQS# tRPRE T2 ends Resulting differential signal relevant for tRPRE specification PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 0V tRPRE 167 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM READ Operation Figure 80: tRPST Timing CK VTT CK# tA DQS Single-ended signal, provided as background information t VTT B tC tD DQS# VTT Single-ended signal, provided as background information tRPST DQS - DQS# Resulting differential signal relevant for tRPST specification PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN T1 begins tRPST 0V T2 ends tRPST 168 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM WRITE Operation WRITE Operation WRITE bursts are initiated with a WRITE command. The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is selected, the row being accessed is precharged at the end of the WRITE burst. If auto precharge is not selected, the row will remain open for subsequent accesses. After a WRITE command has been issued, the WRITE burst may not be interrupted. For the generic WRITE commands used in Figure 83 (page 171) through Figure 91 (page 176), auto precharge is disabled. During WRITE bursts, the first valid data-in element is registered on a rising edge of DQS following the WRITE latency (WL) clocks later and subsequent data elements will be registered on successive edges of DQS. WRITE latency (WL) is defined as the sum of posted CAS additive latency (AL) and CAS WRITE latency (CWL): WL = AL + CWL. The values of AL and CWL are programmed in the MR0 and MR2 registers, respectively. Prior to the first valid DQS edge, a full cycle is needed (including a dummy crossover of DQS, DQS#) and specified as the WRITE preamble shown in Figure 83 (page 171). The half cycle on DQS following the last data-in element is known as the WRITE postamble. The time between the WRITE command and the first valid edge of DQS is WL clocks tDQSS. Figure 84 (page 172) through Figure 91 (page 176) show the nominal case where tDQSS = 0ns; however, Figure 83 (page 171) includes tDQSS (MIN) and tDQSS (MAX) cases. Data may be masked from completing a WRITE using data mask. The data mask occurs on the DM ball aligned to the WRITE data. If DM is LOW, the WRITE completes normally. If DM is HIGH, that bit of data is masked. Upon completion of a burst, assuming no other commands have been initiated, the DQ will remain High-Z, and any additional input data will be ignored. Data for any WRITE burst may be concatenated with a subsequent WRITE command to provide a continuous flow of input data. The new WRITE command can be tCCD clocks following the previous WRITE command. The first data element from the new burst is applied after the last element of a completed burst. Figure 84 (page 172) and Figure 85 (page 172) show concatenated bursts. An example of nonconsecutive WRITEs is shown in Figure 86 (page 173). Data for any WRITE burst may be followed by a subsequent READ command after tWTR has been met (see Figure 87 (page 173), Figure 88 (page 174), and Figure 89 (page 175)). Data for any WRITE burst may be followed by a subsequent PRECHARGE command, providing tWR has been met, as shown in Figure 90 (page 176) and Figure 91 (page 176). Both tWTR and tWR starting time may vary, depending on the mode register settings (fixed BC4, BL8 versus OTF). PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 169 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM WRITE Operation Figure 81: tWPRE Timing CK VTT CK# T1 begins tWPRE DQS - DQS# 0V tWPRE T2 Resulting differential signal relevant for tWPRE specification tWPRE ends Figure 82: tWPST Timing CK VTT CK# tWPST DQS - DQS# Resulting differential signal relevant for tWPST specification 0V T1 begins tWPST T2 ends tWPST PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 170 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM WRITE Operation Figure 83: WRITE Burst T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command1 WL = AL + CWL Address2 Bank, Col n tDQSS tWPRE (MIN) tDQSS tDSH tDSH tDSH tDSH tWPST DQS, DQS# tDQSH tDQSL tDQSH DI n DQ3 tDQSS DI n+1 tWPRE (NOM) tDQSL tDQSH DI n+2 tDQSL DI n+3 tDSH tDQSH DI n+4 tDQSL DI n+5 tDSH tDQSH DI n+6 tDQSL DI n+7 tDSH tDSH tWPST tDQSH tDQSL DQS, DQS# tDQSH tDQSL tDQSH tDSS tDQSH tDSS DI n DQ3 tDQSL DI n+1 tDQSL tDQSH tDQSL tDSS DI n+2 DI n+3 tDSS DI n+4 DI n+5 tDSS DI n+6 DI n+7 tDQSS tDQSS tWPRE (MAX) tWPST DQS, DQS# tDQSH tDQSL tDQSH tDSS DI n DQ3 tDQSL tDQSH tDSS DI n+1 tDQSL tDQSH tDSS DI n+2 DI n+3 tDQSL tDQSH tDSS DI n+4 DI n+5 tDQSL tDSS DI n+6 DI n+7 Transitioning Data Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE command at T0. 3. DI n = data-in for column n. 4. BL8, WL = 5 (AL = 0, CWL = 5). 5. tDQSS must be met at each rising clock edge. 6. tWPST is usually depicted as ending at the crossing of DQS, DQS#; however, tWPST actually ends when DQS no longer drives LOW and DQS# no longer drives HIGH. 171 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 84: Consecutive WRITE (BL8) to WRITE (BL8) T0 T1 WRITE NOP T2 T3 T4 T5 T6 T7 T8 T9 T10 NOP NOP WRITE NOP NOP NOP NOP NOP NOP T11 T12 T13 NOP NOP NOP T14 CK# CK Command1 tBL tCCD NOP tWR = 4 clocks tWTR Address2 Valid Valid tWPST tWPRE DQS, DQS# DI n DQ3 DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7 DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 WL = 5 WL = 5 Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE commands at T0 and T4. 3. DI n (or b) = data-in for column n (or column b). 4. BL8, WL = 5 (AL = 0, CWL = 5). Notes: 172 Figure 85: Consecutive WRITE (BC4) to WRITE (BC4) via OTF T0 T1 WRITE NOP T2 T3 T4 T5 T6 T7 T8 T9 T10 NOP NOP WRITE NOP NOP NOP NOP NOP NOP T11 T12 T13 NOP NOP NOP T14 CK# Command1 tCCD tBL NOP tWR = 4 clocks tWTR Address2 Valid Valid tWPST tWPRE tWPRE tWPST DQS, DQS# DI n DQ3 DI n+1 DI n+2 DI n+3 DI b DI b+1 DI b+2 DI b+3 WL = 5 WL = 5 Transitioning Data Notes: 1. 2. 3. 4. 5. NOP commands are shown for ease of illustration; other commands may be valid at these times. BC4, WL = 5 (AL = 0, CWL = 5). DI n (or b) = data-in for column n (or column b). The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and T4. If set via MRS (fixed) tWR and tWTR would start T11 (2 cycles earlier). Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM WRITE Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. CK PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 86: Nonconsecutive WRITE to WRITE T0 T1 T2 T3 T4 Command WRITE NOP NOP NOP NOP Address Valid CK# T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK NOP WRITE NOP NOP Valid WL = CWL + AL = 7 WL = CWL + AL = 7 DQS, DQS# DI n DQ DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7 DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 DM Transitioning Data Notes: 1. 2. 3. 4. Don't Care DI n (or b) = data-in for column n (or column b). Seven subsequent elements of data-in are applied in the programmed order following DO n. Each WRITE command may be to any bank. Shown for WL = 7 (CWL = 7, AL = 0). Figure 87: WRITE (BL8) to READ (BL8) 173 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T11 Ta0 NOP READ CK# CK Command1 tWTR2 Valid Valid tWPRE tWPST DQS, DQS# DI n DQ4 DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7 WL = 5 Indicates break in time scale Notes: Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last write data shown at T9. 3. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and MR0[12] = 1 during the WRITE command at T0. The READ command at Ta0 can be either BC4 or BL8, depending on MR0[1:0] and the A12 status at Ta0. 4. DI n = data-in for column n. 5. RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5). 4Gb: x4, x8, x16 DDR3 SDRAM WRITE Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Address3 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 88: WRITE to READ (BC4 Mode Register Setting) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP READ CK# CK Command1 tWTR2 Address3 Valid Valid tWPRE tWPST DQS, DQS# DI n DQ4 DI n+1 DI n+2 DI n+3 WL = 5 Indicates break in time scale Notes: Transitioning Data Don't Care 174 4Gb: x4, x8, x16 DDR3 SDRAM WRITE Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last write data shown at T7. 3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0 and the READ command at Ta0. 4. DI n = data-in for column n. 5. BC4 (fixed), WL = 5 (AL = 0, CWL = 5), RL = 5 (AL = 0, CL = 5). PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 89: WRITE (BC4 OTF) to READ (BC4 OTF) T0 T1 T2 T3 T4 T5 T6 WRITE NOP NOP NOP NOP NOP NOP T7 T8 T9 T10 NOP NOP NOP NOP T11 Tn NOP READ CK# CK Command1 tBL Address3 = 4 clocks tWTR2 Valid Valid tWPRE tWPST DQS, DQS# DI n DQ4 DI n+1 DI n+2 DI n+3 WL = 5 RL = 5 Indicates break in time scale Notes: Transitioning Data Don't Care 175 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. tWTR controls the WRITE-to-READ delay to the same device and starts after tBL. 3. The BC4 OTF setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and the READ command at Tn. 4. DI n = data-in for column n. 5. BC4, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5). 4Gb: x4, x8, x16 DDR3 SDRAM WRITE Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM WRITE Operation Figure 90: WRITE (BL8) to PRECHARGE T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1 Command WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE Address Valid CK# CK Valid tWR WL = AL + CWL DQS, DQS# DI n DQ BL8 DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7 Indicates break in time scale Notes: Transitioning Data Don't Care 1. DI n = data-in from column n. 2. Seven subsequent elements of data-in are applied in the programmed order following DO n. 3. Shown for WL = 7 (AL = 0, CWL = 7). Figure 91: WRITE (BC4 Mode Register Setting) to PRECHARGE T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1 Command WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE Address Valid CK# CK Valid tWR WL = AL + CWL DQS, DQS# DI n DQ BC4 DI n+1 DI n+2 DI n+3 Indicates break in time scale Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The write recovery time (tWR) is referenced from the first rising clock edge after the last write data is shown at T7. tWR specifies the last burst WRITE cycle until the PRECHARGE command can be issued to the same bank. 3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0. 4. DI n = data-in for column n. 5. BC4 (fixed), WL = 5, RL = 5. 176 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM WRITE Operation Figure 92: WRITE (BC4 OTF) to PRECHARGE T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP Tn CK# CK Command1 PRE tWR2 Address3 Bank, Col n Valid tWPRE tWPST DQS, DQS# DI n DQ4 DI n+1 DI n+2 DI n+3 WL = 5 Indicates break in time scale Notes: Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The write recovery time (tWR) is referenced from the rising clock edge at T9. tWR specifies the last burst WRITE cycle until the PRECHARGE command can be issued to the same bank. 3. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0. 4. DI n = data-in for column n. 5. BC4 (OTF), WL = 5, RL = 5. DQ Input Timing Figure 83 (page 171) shows the strobe-to-clock timing during a WRITE burst. DQS, DQS# must transition within 0.25tCK of the clock transitions, as limited by tDQSS. All data and data mask setup and hold timings are measured relative to the DQS, DQS# crossing, not the clock crossing. The WRITE preamble and postamble are also shown in Figure 83 (page 171). One clock prior to data input to the DRAM, DQS must be HIGH and DQS# must be LOW. Then for a half clock, DQS is driven LOW (DQS# is driven HIGH) during the WRITE preamble, tWPRE. Likewise, DQS must be kept LOW by the controller after the last data is written to the DRAM during the WRITE postamble, tWPST. Data setup and hold times are also shown in Figure 83 (page 171). All setup and hold times are measured from the crossing points of DQS and DQS#. These setup and hold values pertain to data input and data mask input. Additionally, the half period of the data input strobe is specified by tDQSH and tDQSL. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 177 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM WRITE Operation Figure 93: Data Input Timing DQS, DQS# tWPRE DQ tDQSH tWPST tDQSL DI b DM tDS tDH tDS tDH Transitioning Data PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 178 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM PRECHARGE Operation PRECHARGE Operation Input A10 determines whether one bank or all banks are to be precharged and, in the case where only one bank is to be precharged, inputs BA[2:0] select the bank. When all banks are to be precharged, inputs BA[2:0] are treated as "Don't Care." After a bank is precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued. SELF REFRESH Operation The SELF REFRESH operation is initiated like a REFRESH command except CKE is LOW. The DLL is automatically disabled upon entering SELF REFRESH and is automatically enabled and reset upon exiting SELF REFRESH. All power supply inputs (including V REFCA and V REFDQ) must be maintained at valid levels upon entry/exit and during self refresh mode operation. V REFDQ may float or not drive V DDQ/2 while in self refresh mode under certain conditions: * * * * VSS < V REFDQ < V DD is maintained. VREFDQ is valid and stable prior to CKE going back HIGH. The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid. All other self refresh mode exit timing requirements are met. The DRAM must be idle with all banks in the precharge state (tRP is satisfied and no bursts are in progress) before a self refresh entry command can be issued. ODT must also be turned off before self refresh entry by registering the ODT ball LOW prior to the self refresh entry command (see On-Die Termination (ODT) (page 192) for timing requirements). If RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a "Don't Care." After the self refresh entry command is registered, CKE must be held LOW to keep the DRAM in self refresh mode. After the DRAM has entered self refresh mode, all external control signals, except CKE and RESET#, are "Don't Care." The DRAM initiates a minimum of one REFRESH command internally within the tCKE period when it enters self refresh mode. The requirements for entering and exiting self refresh mode depend on the state of the clock during self refresh mode. First and foremost, the clock must be stable (meeting tCK specifications) when self refresh mode is entered. If the clock remains stable and the frequency is not altered while in self refresh mode, then the DRAM is allowed to exit self refresh mode after tCKESR is satisfied (CKE is allowed to transition HIGH tCKESR later than when CKE was registered LOW). Since the clock remains stable in self refresh mode (no frequency change), tCKSRE and tCKSRX are not required. However, if the clock is altered during self refresh mode (if it is turned-off or its frequency changes), then tCKSRE and tCKSRX must be satisfied. When entering self refresh mode, tCKSRE must be satisfied prior to altering the clock's frequency. Prior to exiting self refresh mode, tCKSRX must be satisfied prior to registering CKE HIGH. When CKE is HIGH during self refresh exit, NOP or DES must be issued for tXS time. tXS is required for the completion of any internal refresh already in progress and must be satisfied before a valid command not requiring a locked DLL can be issued to the device. tXS is also the earliest time self refresh re-entry may occur. Before a command requiring a locked DLL can be applied, a ZQCL command must be issued, tZQOPER timing must be met, and tXSDLL must be satisfied. ODT must be off during tXSDLL. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 179 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM SELF REFRESH Operation Figure 94: Self Refresh Entry/Exit Timing T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Td0 Te0 Tf0 Valid Valid CK# CK tCKSRX1 tCKSRE1 tIS tIH tCPDED tIS CKE tCKESR (MIN)1 tIS ODT2 Valid ODTL RESET#2 Command NOP SRE (REF)3 NOP4 SRX (NOP) NOP5 Address tRP8 Valid 6 Valid 7 Valid Valid tXS6, 9 tXSDLL7, 9 Enter self refresh mode (synchronous) Exit self refresh mode (asynchronous) Indicates break in time scale Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Don't Care 1. The clock must be valid and stable, meeting tCK specifications at least tCKSRE after entering self refresh mode, and at least tCKSRX prior to exiting self refresh mode, if the clock is stopped or altered between states Ta0 and Tb0. If the clock remains valid and unchanged from entry and during self refresh mode, then tCKSRE and tCKSRX do not apply; however, tCKESR must be satisfied prior to exiting at SRX. 2. ODT must be disabled and RTT off prior to entering self refresh at state T1. If both RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a "Don't Care." 3. Self refresh entry (SRE) is synchronous via a REFRESH command with CKE LOW. 4. A NOP or DES command is required at T2 after the SRE command is issued prior to the inputs becoming "Don't Care." 5. NOP or DES commands are required prior to exiting self refresh mode until state Te0. 6. tXS is required before any commands not requiring a locked DLL. 7. tXSDLL is required before any commands requiring a locked DLL. 8. The device must be in the all banks idle state prior to entering self refresh mode. For example, all banks must be precharged, tRP must be met, and no data bursts can be in progress. 9. Self refresh exit is asynchronous; however, tXS and tXSDLL timings start at the first rising clock edge where CKE HIGH satisfies tISXR at Tc1. tCKSRX timing is also measured so that tISXR is satisfied at Tc1. 180 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Extended Temperature Usage Extended Temperature Usage Micron's DDR3 SDRAM support the optional extended case temperature (TC) range of 0C to 95C. Thus, the SRT and ASR options must be used at a minimum. The extended temperature range DRAM must be refreshed externally at 2x (double refresh) anytime the case temperature is above 85C (and does not exceed 95C). The external refresh requirement is accomplished by reducing the refresh period from 64ms to 32ms. However, self refresh mode requires either ASR or SRT to support the extended temperature. Thus, either ASR or SRT must be enabled when T C is above 85C or self refresh cannot be used until T C is at or below 85C. Table 78 summarizes the two extended temperature options and Table 79 summarizes how the two extended temperature options relate to one another. Table 78: Self Refresh Temperature and Auto Self Refresh Description Field MR2 Bits Description Self Refresh Temperature (SRT) SRT If ASR is disabled (MR2[6] = 0), SRT must be programmed to indicate TOPER during self refresh: *MR2[7] = 0: Normal operating temperature range (0C to 85C) *MR2[7] = 1: Extended operating temperature range (0C to 95C) If ASR is enabled (MR2[7] = 1), SRT must be set to 0, even if the extended temperature range is supported *MR2[7] = 0: SRT is disabled 7 Auto Self Refresh (ASR) ASR 6 When ASR is enabled, the DRAM automatically provides SELF REFRESH power management functions, (refresh rate for all supported operating temperature values) * MR2[6] = 1: ASR is enabled (M7 must = 0) When ASR is not enabled, the SRT bit must be programmed to indicate TOPER during SELF REFRESH operation * MR2[6] = 0: ASR is disabled; must use manual self refresh temperature (SRT) Table 79: Self Refresh Mode Summary MR2[6] MR2[7] (ASR) (SRT) SELF REFRESH Operation Permitted Operating Temperature Range for Self Refresh Mode 0 0 Self refresh mode is supported in the normal temperature range 0 1 Self refresh mode is supported in normal and extended temper- Normal and extended (0C to 95C) ature ranges; When SRT is enabled, it increases self refresh power consumption 1 0 Self refresh mode is supported in normal and extended temper- Normal and extended (0C to 95C) ature ranges; Self refresh power consumption may be temperature-dependent 1 1 Illegal PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 181 Normal (0C to 85C) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Power-Down Mode Power-Down Mode Power-down is synchronously entered when CKE is registered LOW coincident with a NOP or DES command. CKE is not allowed to go LOW while an MRS, MPR, ZQCAL, READ, or WRITE operation is in progress. CKE is allowed to go LOW while any of the other legal operations (such as ROW ACTIVATION, PRECHARGE, auto precharge, or REFRESH) are in progress. However, the power-down IDD specifications are not applicable until such operations have completed. Depending on the previous DRAM state and the command issued prior to CKE going LOW, certain timing constraints must be satisfied (as noted in Table 80). Timing diagrams detailing the different power-down mode entry and exits are shown in Figure 95 (page 184) through Figure 104 (page 189). Table 80: Command to Power-Down Entry Parameters DRAM Status Last Command Prior to CKE LOW1 Parameter (Min) Parameter Value Figure Idle or active ACTIVATE tACTPDEN 1tCK Figure 102 (page 188) Idle or active PRECHARGE tPRPDEN 1tCK READ or READAP tRDPDEN Active WRITE: BL8OTF, BL8MRS, BC4OTF tWRPDEN Active WRITE: BC4MRS Active Active WRITEAP: BL8OTF, BL8MRS, BC4OTF Active WRITEAP: BC4MRS tWRAPDEN Figure 103 (page 188) 1tCK Figure 98 (page 186) tWR/tCK Figure 99 (page 186) WL + 2tCK + tWR/tCK Figure 99 (page 186) RL + WL + 4tCK 4tCK + 1tCK Figure 100 (page 187) WL + 2tCK + WR + 1tCK Figure 100 (page 187) 1tCK Figure 101 (page 187) WL + 4tCK + + WR + Idle REFRESH tREFPDEN Power-down REFRESH tXPDLL Greater of 10tCK or 24ns Figure 105 (page 189) MODE REGISTER SET tMRSPDEN tMOD Figure 104 (page 189) Idle Note: 1. If slow-exit mode precharge power-down is enabled and entered, ODT becomes asynchronous tANPD prior to CKE going LOW and remains asynchronous until tANPD + tXPDLL after CKE goes HIGH. Entering power-down disables the input and output buffers, excluding CK, CK#, ODT, CKE, and RESET#. NOP or DES commands are required until tCPDED has been satisfied, at which time all specified input/output buffers are disabled. The DLL should be in a locked state when power-down is entered for the fastest power-down exit timing. If the DLL is not locked during power-down entry, the DLL must be reset after exiting power-down mode for proper READ operation as well as synchronous ODT operation. During power-down entry, if any bank remains open after all in-progress commands are complete, the DRAM will be in active power-down mode. If all banks are closed after all in-progress commands are complete, the DRAM will be in precharge power-down mode. Precharge power-down mode must be programmed to exit with either a slow exit mode or a fast exit mode. When entering precharge power-down mode, the DLL is turned off in slow exit mode or kept on in fast exit mode. The DLL also remains on when entering active power-down. ODT has special timing constraints when slow exit mode precharge power-down is enabled and entered. Refer to Asynchronous ODT Mode (page 205) for detailed ODT usage requirements in slow PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 182 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Power-Down Mode exit mode precharge power-down. A summary of the two power-down modes is listed in Table 81 (page 183). While in either power-down state, CKE is held LOW, RESET# is held HIGH, and a stable clock signal must be maintained. ODT must be in a valid state but all other input signals are "Don't Care." If RESET# goes LOW during power-down, the DRAM will switch out of power-down mode and go into the reset state. After CKE is registered LOW, CKE must remain LOW until tPD (MIN) has been satisfied. The maximum time allowed for powerdown duration is tPD (MAX) (9 x tREFI). The power-down states are synchronously exited when CKE is registered HIGH (with a required NOP or DES command). CKE must be maintained HIGH until tCKE has been satisfied. A valid, executable command may be applied after power-down exit latency, tXP, and tXPDLL have been satisfied. A summary of the power-down modes is listed below. For specific CKE-intensive operations, such as repeating a power-down-exit-to-refreshto-power-down-entry sequence, the number of clock cycles between power-down exit and power-down entry may not be sufficient to keep the DLL properly updated. In addition to meeting tPD when the REFRESH command is used between power-down exit and power-down entry, two other conditions must be met. First, tXP must be satisfied before issuing the REFRESH command. Second, tXPDLL must be satisfied before the next power-down may be entered. An example is shown in Figure 105 (page 189). Table 81: Power-Down Modes MR0[12] DLL State PowerDown Exit Active (any bank open) "Don't Care" On Fast tXP to any other valid command Precharged (all banks precharged) 1 On Fast tXP to any other valid command Slow tXPDLL DRAM State PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 0 Off 183 Relevant Parameters to commands that require the DLL to be locked (READ, RDAP, or ODT on); tXP to any other valid command Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Power-Down Mode Figure 95: Active Power-Down Entry and Exit T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4 NOP NOP NOP Valid CK# CK Command tCK Valid tCH tCL NOP NOP tPD tIS CKE Address tIH tIH tIS tCKE (MIN) Valid Valid tXP tCPDED Enter power-down mode Exit power-down mode Indicates break in time scale PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 184 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Power-Down Mode Figure 96: Precharge Power-Down (Fast-Exit Mode) Entry and Exit T0 T1 T2 T4 T5 NOP NOP T3 Ta0 Ta1 NOP Valid CK# CK t t CK t CH Command CL NOP NOP t t t CPDED t IS IH CKE t t CKE (MIN) IS t PD Enter power-down mode XP Exit power-down mode Indicates break in time scale Don't Care Figure 97: Precharge Power-Down (Slow-Exit Mode) Entry and Exit T0 T1 T2 T3 T4 Ta NOP NOP Ta1 Tb CK# CK tCK Command tCH PRE tCL NOP NOP tCKE tCPDED Valid 1 Valid 2 (MIN) tXP tIH tIS CKE tIS tXPDLL tPD Enter power-down mode Exit power-down mode Indicates break in time scale Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Don't Care 1. Any valid command not requiring a locked DLL. 2. Any valid command requiring a locked DLL. 185 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Power-Down Mode Figure 98: Power-Down Entry After READ or READ with Auto Precharge (RDAP) CK# T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 READ/ RDAP NOP NOP NOP NOP NOP NOP NOP NOP Ta7 Ta8 Ta9 Ta10 Ta11 Ta12 CK Command NOP tIS NOP tCPDED CKE Address Valid tPD RL = AL + CL DQS, DQS# DQ BL8 DI n DI DI n+1 n+2 DQ BC4 DI n DI n+1 DI n+3 DI n+4 DI n+ 5 DI n+6 DI n+7 DI DI n+2 n+3 tRDPDEN Power-down or self refresh entry Indicates break in time scale Transitioning Data Don't Care Figure 99: Power-Down Entry After WRITE CK# T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Tb1 Tb2 Tb3 Tb4 CK Command NOP tIS NOP tCPDED CKE Address Valid tWR WL = AL + CWL tPD DQS, DQS# DQ BL8 DI n DI DI n+1 n+2 DI n+3 DQ BC4 DI n DI n+1 DI n+3 DI n+2 DI n+4 DI DI n+5 n+6 DI n+7 tWRPDEN Power-down or self refresh entry1 Indicates break in time scale Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Transitioning Data Don't Care 1. CKE can go LOW 2tCK earlier if BC4MRS. 186 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Power-Down Mode Figure 100: Power-Down Entry After WRITE with Auto Precharge (WRAP) CK# T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1 Tb2 WRAP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Tb3 Tb4 CK Command tIS tCPDED CKE Address Valid A10 WR1 WL = AL + CWL tPD DQS, DQS# DQ BL8 DI n DI n+1 DI DI DI n+2 n+3 n+4 DQ BC4 DI n DI n+1 DI DI n+2 n+3 DI n+5 DI n+6 DI n+7 tWRAPDEN Power-down or self refresh entry2 Start internal precharge Indicates break in time scale Notes: Transitioning Data Don't Care 1. tWR is programmed through MR0[11:9] and represents tWRmin (ns)/tCK rounded up to the next integer tCK. 2. CKE can go LOW 2tCK earlier if BC4MRS. Figure 101: REFRESH to Power-Down Entry T0 T1 T2 T3 Ta0 NOP NOP Ta1 Ta2 Tb0 CK# CK tCK Command tCH tCL REFRESH NOP tCPDED NOP tCKE Valid (MIN) tPD tIS CKE tREFPDEN tXP tRFC (MIN) (MIN)1 Indicates break in time scale Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Don't Care 1. After CKE goes HIGH during tRFC, CKE must remain HIGH until tRFC is satisfied. 187 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Power-Down Mode Figure 102: ACTIVATE to Power-Down Entry T0 T1 T2 T3 NOP NOP T5 T4 T6 T7 CK# CK tCK Command tCH tCL ACTIVE Address Valid tCPDED tIS tPD CKE tACTPDEN Don't Care Figure 103: PRECHARGE to Power-Down Entry T0 T1 T2 T3 NOP NOP T4 T5 T6 T7 CK# CK tCK Command Address tCH tCL PRE All/single bank tCPDED tIS tPD CKE tPREPDEN Don't Care PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 188 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Power-Down Mode Figure 104: MRS Command to Power-Down Entry T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4 CK# CK tCK Command MRS Address Valid tCH tCPDED tCL NOP NOP NOP NOP NOP tMRSPDEN tPD tIS CKE Indicates break in time scale Don't Care Figure 105: Power-Down Exit to Refresh to Power-Down Entry T0 T1 T2 T3 T4 Ta0 NOP REFRESH Ta1 Tb0 CK# CK Command tCK tCH NOP tCL NOP NOP tCPDED NOP NOP tXP1 tIH tIS CKE tIS tPD tXPDLL2 Enter power-down mode Exit power-down mode Enter power-down mode Indicates break in time scale Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Don't Care 1. tXP must be satisfied before issuing the command. 2. tXPDLL must be satisfied (referenced to the registration of power-down exit) before the next power-down can be entered. 189 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM RESET Operation RESET Operation The RESET signal (RESET#) is an asynchronous reset signal that triggers any time it drops LOW, and there are no restrictions about when it can go LOW. After RESET# goes LOW, it must remain LOW for 100ns. During this time, the outputs are disabled, ODT (RTT) turns off (High-Z), and the DRAM resets itself. CKE should be driven LOW prior to RESET# being driven HIGH. After RESET# goes HIGH, the DRAM must be re-initialized as though a normal power-up was executed. All refresh counters on the DRAM are reset, and data stored in the DRAM is assumed unknown after RESET# has gone LOW. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 190 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM RESET Operation Figure 106: RESET Sequence System RESET (warm boot) Stable and valid clock T0 T1 tCK Tc0 Tb0 Ta0 Td0 CK# CK tCL tCL t CKSRX1 T = 100ns (MIN) RESET# tIOZ = 20ns T = 10ns (MIN) tIS Valid CKE tIS tIS Static LOW in case RTT_Nom is enabled at time Ta0, otherwise static HIGH or LOW ODT Valid tIS MRS MRS MRS MRS Address Code Code Code Code A10 Code Code Code Code BA0 = L BA1 = H BA2 = L BA0 = H BA1 = H BA2 = L BA0 = H BA1 = L BA2 = L BA0 = L BA1 = L BA2 = L Command NOP Valid ZQCL DM BA[2:0] DQS DQ RTT Valid A10 = H Valid Valid High-Z High-Z High-Z T = 500s (MIN) MR2 All voltage supplies valid and stable tMRD tMRD tXPR MR3 DRAM ready for external commands tMRD MR1 with DLL ENABLE tMOD MR0 with DLL RESET ZQCAL tZQinit tDLLK Normal operation Indicates break in time scale Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Don't Care 1. The minimum time required is the longer of 10ns or 5 clocks. 191 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT) On-Die Termination (ODT) On-die termination (ODT) is a feature that enables the DRAM to enable/disable and turn on/off termination resistance for each DQ, DQS, DQS#, and DM for the x4 and x8 configurations (and TDQS, TDQS# for the x8 configuration, when enabled). ODT is applied to each DQ, UDQS, UDQS#, LDQS, LDQS#, UDM, and LDM signal for the x16 configuration. ODT is designed to improve signal integrity of the memory channel by enabling the DRAM controller to independently turn on/off the DRAM's internal termination resistance for any grouping of DRAM devices. ODT is not supported during DLL disable mode (simple functional representation shown below). The switch is enabled by the internal ODT control logic, which uses the external ODT ball and other control information. Figure 107: On-Die Termination ODT To other circuitry such as RCV, ... VDDQ/2 RTT Switch DQ, DQS, DQS#, DM, TDQS, TDQS# Functional Representation of ODT The value of RTT (ODT termination resistance value) is determined by the settings of several mode register bits (see Table 86 (page 195)). The ODT ball is ignored while in self refresh mode (must be turned off prior to self refresh entry) or if mode registers MR1 and MR2 are programmed to disable ODT. ODT is comprised of nominal ODT and dynamic ODT modes and either of these can function in synchronous or asynchronous mode (when the DLL is off during precharge power-down or when the DLL is synchronizing). Nominal ODT is the base termination and is used in any allowable ODT state. Dynamic ODT is applied only during writes and provides OTF switching from no RTT or RTT,nom to RTT(WR). The actual effective termination, RTT(EFF), may be different from RTT targeted due to nonlinearity of the termination. For RTT(EFF) values and calculations, see ODT Characteristics (page 56). Nominal ODT ODT (NOM) is the base termination resistance for each applicable ball; it is enabled or disabled via MR1[9, 6, 2] (see Mode Register 1 (MR1) Definition), and it is turned on or off via the ODT ball. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 192 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM On-Die Termination (ODT) Table 82: Truth Table - ODT (Nominal) Note 1 applies to the entire table MR1[9, 6, 2] ODT Pin DRAM Termination State DRAM State Notes 000 0 RTT,nom disabled, ODT off Any valid 2 000 1 RTT,nom disabled, ODT on Any valid except self refresh, read 3 000-101 0 RTT,nom enabled, ODT off Any valid 2 000-101 1 RTT,nom enabled, ODT on Any valid except self refresh, read 3 110 and 111 X RTT,nom reserved, ODT on or off Illegal Notes: 1. Assumes dynamic ODT is disabled (see Dynamic ODT (page 194) when enabled). 2. ODT is enabled and active during most writes for proper termination, but it is not illegal for it to be off during writes. 3. ODT must be disabled during reads. The RTT,nom value is restricted during writes. Dynamic ODT is applicable if enabled. Nominal ODT resistance RTT,nom is defined by MR1[9, 6, 2], as shown in Mode Register 1 (MR1) Definition. The R TT,nom termination value applies to the output pins previously mentioned. DDR3 SDRAM supports multiple RTT,nom values based on RZQ/n where n can be 2, 4, 6, 8, or 12 and RZQ is 240. RTT,nom termination is allowed any time after the DRAM is initialized, calibrated, and not performing read access, or when it is not in self refresh mode. Write accesses use RTT,nom if dynamic ODT (RTT(WR)) is disabled. If RTT,nom is used during writes, only RZQ/2, RZQ/4, and RZQ/6 are allowed (see Table 86 (page 195)). ODT timings are summarized in Table 83 (page 193), as well as listed in Table 55 (page 78). Examples of nominal ODT timing are shown in conjunction with the synchronous mode of operation in Synchronous ODT Mode (page 200). Table 83: ODT Parameters Symbol Description Begins at Definition for All DDR3 Speed Bins Unit tAON CWL + AL - 2 tCK Defined to ODTLon ODT synchronous turn-on delay ODT registered HIGH RTT(ON) ODTLoff ODT synchronous turn-off delay ODT registered HIGH RTT(OFF) tAOF CWL + AL - 2 tCK tAONPD ODT asynchronous turn-on delay ODT registered HIGH RTT(ON) 2-8.5 ns tAOFPD ODT asynchronous turn-off delay ODT registered HIGH RTT(OFF) 2-8.5 ns ODT registered LOW 4tCK tCK ODTH4 ODT minimum HIGH time after ODT ODT registered HIGH assertion or write (BC4) or write registration with ODT HIGH ODTH8 ODT minimum HIGH time after write (BL8) Write registration with ODT HIGH ODT registered LOW 6tCK tCK tAON ODT turn-on relative to ODTLon completion Completion of ODTLon RTT(ON) See Table 55 (page 78) ps tAOF ODT turn-off relative to ODTLoff completion Completion of ODTLoff RTT(OFF) 0.5tCK 0.2tCK tCK PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 193 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Dynamic ODT Dynamic ODT In certain application cases, and to further enhance signal integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without issuing an MRS command, essentially changing the ODT termination on the fly. With dynamic ODT RTT(WR)) enabled, the DRAM switches from nominal ODT RTT,nom) to dynamic ODT RTT(WR)) when beginning a WRITE burst and subsequently switches back to nominal ODT RTT,nom) at the completion of the WRITE burst. This requirement is supported by the dynamic ODT feature, as described below. Dynamic ODT Special Use Case When DDR3 devices are architect as a single rank memory array, dynamic ODT offers a special use case: the ODT ball can be wired high (via a current limiting resistor preferred) by having RTT,nom disabled via MR1 and RTT(WR) enabled via MR2. This will allow the ODT signal not to have to be routed yet the DRAM can provide ODT coverage during write accesses. When enabling this special use case, some standard ODT spec conditions may be violated: ODT is sometimes suppose to be held low. Such ODT spec violation (ODT not LOW) is allowed under this special use case. Most notably, if Write Leveling is used, this would appear to be a problem since RTT(WR) can not be used (should be disabled) and RTT(NOM) should be used. For Write leveling during this special use case, with the DLL locked, then RTT(NOM) maybe enabled when entering Write Leveling mode and disabled when exiting Write Leveling mode. More so, R TT(NOM) must be enabled when enabling Write Leveling, via same MR1 load, and disabled when disabling Write Leveling, via same MR1 load if RTT(NOM) is to be used. ODT will turn-on within a delay of ODTLon + tAON + tMOD + 1CK (enabling via MR1) or turn-off within a delay of ODTLoff + tAOF + tMOD + 1CK. As seen in the table below, between the Load Mode of MR1 and the previously specified delay, the value of ODT is uncertain. this means the DQ ODT termination could turn-on and then turn-off again during the period of stated uncertainty. Table 84: Write Leveling with Dynamic ODT Special Case Begin RTT,nom Uncertainty MR1 load mode command: End RTT,nom Uncertainty ODTLon + tAON ODTLoff + tAOFF + tMOD + tMOD + 1CK I/Os RTT,nom Final State DQS, DQS# Drive RTT,nom value DQs No RTT,nom DQS, DQS# No RTT,nom DQs No RTT,nom Enable Write Leveling and RTT(NOM) MR1 load mode command: + 1CK Disable Write Leveling and RTT(NOM) Functional Description The dynamic ODT mode is enabled if either MR2[9] or MR2[10] is set to 1. Dynamic ODT is not supported during DLL disable mode so RTT(WR) must be disabled. The dynamic ODT function is described below: * Two RTT values are available--RTT,nom and RTT(WR). - The value for RTT,nom is preselected via MR1[9, 6, 2]. - The value for RTT(WR) is preselected via MR2[10, 9]. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 194 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Dynamic ODT * During DRAM operation without READ or WRITE commands, the termination is controlled. - Nominal termination strength RTT,nom is used. - Termination on/off timing is controlled via the ODT ball and latencies ODTLon and ODTLoff. * When a WRITE command (WR, WRAP, WRS4, WRS8, WRAPS4, WRAPS8) is registered, and if dynamic ODT is enabled, the ODT termination is controlled. - A latency of ODTLcnw after the WRITE command: termination strength R TT,nom switches to RTT(WR) - A latency of ODTLcwn8 (for BL8, fixed or OTF) or ODTLcwn4 (for BC4, fixed or OTF) after the WRITE command: termination strength R TT(WR) switches back to RTT,nom. - On/off termination timing is controlled via the ODT ball and determined by ODTLon, ODTLoff, ODTH4, and ODTH8. - During the tADC transition window, the value of RTT is undefined. ODT is constrained during writes and when dynamic ODT is enabled (see Table 85 (page 195)). ODT timings listed in Table 83 (page 193) also apply to dynamic ODT mode. Table 85: Dynamic ODT Specific Parameters Definition for All DDR3 Speed Bins Unit RTT switched from RTT,nom to RTT(WR) WL - 2 tCK Write registration RTT switched from RTT(WR) to RTT,nom 4tCK + ODTL off tCK Change from RTT(WR) to RTT,nom (BL8) Write registration RTT switched from RTT(WR) to RTT,nom 6tCK + ODTL off tCK RTT change skew ODTLcnw completed RTT transition complete 0.5tCK 0.2tCK tCK Symbol Description Begins at Defined to ODTLcnw Change from RTT,nom to RTT(WR) Write registration ODTLcwn4 Change from RTT(WR) to RTT,nom (BC4) ODTLcwn8 tADC Table 86: Mode Registers for RTT,nom MR1 (RTT,nom) M9 M6 M2 RTT,nom (RZQ) RTT,nom (Ohm) RTT,nom Mode Restriction 0 0 0 Off Off n/a 0 0 1 RZQ/4 60 Self refresh 0 1 0 RZQ/2 120 0 1 1 RZQ/6 40 1 0 0 RZQ/12 20 1 0 1 RZQ/8 30 1 1 0 Reserved Reserved n/a 1 1 1 Reserved Reserved n/a Note: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Self refresh, write 1. RZQ = 240. If RTT,nom is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed. 195 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Dynamic ODT Table 87: Mode Registers for RTT(WR) MR2 (RTT(WR)) M10 M9 RTT(WR) (RZQ) RTT(WR) (Ohm) 0 0 Dynamic ODT off: WRITE does not affect RTT,nom 0 1 RZQ/4 1 0 RZQ/2 120 1 1 Reserved Reserved 60 Table 88: Timing Diagrams for Dynamic ODT Figure and Page Title Figure 108 (page 197) Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 Figure 109 (page 197) Dynamic ODT: Without WRITE Command Figure 110 (page 198) Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 Figure 111 (page 199) Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 Figure 112 (page 199) Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 196 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 108: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 NOP NOP NOP NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command Address Valid ODTH4 ODTLoff ODTH4 ODT ODTLon ODTLcwn4 tAON tADC (MIN) RTT tADC (MIN) tAON tAOF (MIN) RTT(WR) RTT,nom tADC (MAX) (MIN) RTT,nom tADC (MAX) tAOF (MAX) (MAX) ODTLcnw DQS, DQS# DQ DI n WL DI n+ 1 DI n+ 2 DI n+ 3 Transitioning Notes: Don't Care 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled. 2. ODTH4 applies to first registering ODT HIGH and then to the registration of the WRITE command. In this example, ODTH4 is satisfied if ODT goes LOW at T8 (four clocks after the WRITE command). 197 Figure 109: Dynamic ODT: Without WRITE Command Command T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Address ODTH4 ODTLon ODTLoff ODT tAON tAOF (MAX) (MIN) RTT,nom RTT tAON (MIN) tAOF (MAX) DQS, DQS# DQ Transitioning Notes: Don't Care 1. AL = 0, CWL = 5. RTT,nom is enabled and RTT(WR) is either enabled or disabled. 2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW; in this example, ODTH4 is satisfied. ODT registered LOW at T5 is also legal. 4Gb: x4, x8, x16 DDR3 SDRAM Dynamic ODT Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. CK# CK PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 110: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 T0 T1 T2 NOP WRS8 NOP T3 T4 T5 T6 T7 T8 T9 T10 T11 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command ODTLcnw Address Valid ODTH8 ODTLoff ODTLon ODT tADC tAOF (MAX) (MIN) RTT(WR) RTT tAON (MIN) tAOF (MAX) ODTLcwn8 DQS, DQS# WL DI b DQ 198 DI b+1 DI b+2 DI b+3 DI b+ 4 DI b+5 DI b+6 DI b+ 7 Transitioning Notes: Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM Dynamic ODT Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 1. Via MRS or OTF; AL = 0, CWL = 5. If RTT,nom can be either enabled or disabled, ODT can be HIGH. RTT(WR) is enabled. 2. In this example, ODTH8 = 6 is satisfied exactly. 4Gb: x4, x8, x16 DDR3 SDRAM Dynamic ODT Figure 111: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 T0 T1 T2 NOP WRS4 NOP T3 T4 T5 T6 T7 T8 T9 T10 T11 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command ODTLcnw Address Valid ODTH4 ODTLoff ODT ODTLon tADC tADC (MAX) RTT(WR) RTT tAON tADC (MIN) tAOF (MIN) RTT,nom tAOF (MAX) (MIN) (MAX) ODTLcwn4 DQS, DQS# DI n DQ DI n+1 DI n+2 DI n+3 WL Transitioning Notes: Don't Care 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled. 2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW, so in this example, ODTH4 is satisfied. ODT registered LOW at T5 is also legal. Figure 112: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 T0 T1 T2 NOP WRS4 NOP T3 T4 T5 T6 T7 T8 T9 T10 T11 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command ODTLcnw Address Valid ODTLoff ODTH4 ODT tADC ODTLon tAOF (MAX) (MIN) RTT(WR) RTT tAON tAOF (MIN) (MAX) ODTLcwn4 DQS, DQS# WL DI n DQ DI n+1 DI n+2 DI n+3 Transitioning Notes: PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Don't Care 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom can be either enabled or disabled. If disabled, ODT can remain HIGH. RTT(WR) is enabled. 2. In this example ODTH4 = 4 is satisfied exactly. 199 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Synchronous ODT Mode Synchronous ODT Mode Synchronous ODT mode is selected whenever the DLL is turned on and locked and when either RTT,nom or RTT(WR) is enabled. Based on the power-down definition, these modes are: * * * * * Any bank active with CKE HIGH Refresh mode with CKE HIGH Idle mode with CKE HIGH Active power-down mode (regardless of MR0[12]) Precharge power-down mode if DLL is enabled by MR0[12] during precharge powerdown ODT Latency and Posted ODT In synchronous ODT mode, RTT turns on ODTLon clock cycles after ODT is sampled HIGH by a rising clock edge and turns off ODTLoff clock cycles after ODT is registered LOW by a rising clock edge. The actual on/off times varies by tAON and tAOF around each clock edge (see Table 89 (page 201)). The ODT latency is tied to the WRITE latency (WL) by ODTLon = WL - 2 and ODTLoff = WL - 2. Since write latency is made up of CAS WRITE latency (CWL) and additive latency (AL), the AL programmed into the mode register (MR1[4, 3]) also applies to the ODT signal. The device's internal ODT signal is delayed a number of clock cycles defined by the AL relative to the external ODT signal. Thus, ODTLon = CWL + AL - 2 and ODTLoff = CWL + AL - 2. Timing Parameters Synchronous ODT mode uses the following timing parameters: ODTLon, ODTLoff, ODTH4, ODTH8, tAON, and tAOF. The minimum R TT turn-on time (tAON [MIN]) is the point at which the device leaves High-Z and ODT resistance begins to turn on. Maximum RTT turn-on time (tAON [MAX]) is the point at which ODT resistance is fully on. Both are measured relative to ODTLon. The minimum R TT turn-off time (tAOF [MIN]) is the point at which the device starts to turn off ODT resistance. The maximum R TT turn off time (tAOF [MAX]) is the point at which ODT has reached High-Z. Both are measured from ODTLoff. When ODT is asserted, it must remain HIGH until ODTH4 is satisfied. If a WRITE command is registered by the DRAM with ODT HIGH, then ODT must remain HIGH until ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (see Figure 114 (page 202)). ODTH4 and ODTH8 are measured from ODT registered HIGH to ODT registered LOW or from the registration of a WRITE command until ODT is registered LOW. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 200 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 89: Synchronous ODT Parameters Symbol Description Begins at Definition for All DDR3 Speed Bins Unit tAON CWL + AL - 2 tCK Defined to ODTLon ODT synchronous turn-on delay ODT registered HIGH RTT(ON) ODTLoff ODT synchronous turn-off delay ODT registered HIGH RTT(OFF) tAOF CWL +AL - 2 tCK ODTH4 ODT minimum HIGH time after ODT assertion or WRITE (BC4) ODT registered HIGH or write registration with ODT HIGH ODT registered LOW 4tCK tCK ODTH8 ODT minimum HIGH time after WRITE Write registration with ODT HIGH (BL8) ODT registered LOW 6tCK tCK tAON ODT turn-on relative to ODTLon completion Completion of ODTLon RTT(ON) See Table 55 (page 78) ps tAOF ODT turn-off relative to ODTLoff completion Completion of ODTLoff RTT(OFF) 0.5tCK 0.2tCK tCK Figure 113: Synchronous ODT 201 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 CK# CK CKE AL = 3 AL = 3 CWL - 2 ODTH4 (MIN) ODTLoff = CWL + AL - 2 ODTLon = CWL + AL - 2 tAON t (MIN) AOF (MIN) RTT,nom RTT tAON tAOF (MAX) Transitioning Note: 1. AL = 3; CWL = 5; ODTLon = WL = 6.0; ODTLoff = WL - 2 = 6. RTT,nom is enabled. (MAX) Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM Synchronous ODT Mode Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. ODT PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 114: Synchronous ODT (BC4) T0 T1 T2 NOP NOP NOP T3 T4 T5 T6 T7 NOP NOP NOP NOP WRS4 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK CKE Command ODTH4 ODTH4 (MIN) ODTH4 ODT ODTLoff = WL - 2 ODTLoff = WL - 2 ODTLon = WL - 2 ODTLon = WL - 2 tAON tAOF (MIN) tAON (MIN) RTT,nom RTT tAON tAOF (MAX) tAON (MAX) tAOF tAOF (MIN) (MAX) (MAX) Transitioning Notes: (MIN) RTT,nom Don't Care 202 1. 2. 3. 4. WL = 7. RTT,nom is enabled. RTT(WR) is disabled. ODT must be held HIGH for at least ODTH4 after assertion (T1). ODT must be kept HIGH ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (T7). ODTH is measured from ODT first registered HIGH to ODT first registered LOW or from the registration of the WRITE command with ODT HIGH to ODT registered LOW. 5. Although ODTH4 is satisfied from ODT registered HIGH at T6, ODT must not go LOW before T11 as ODTH4 must also be satisfied from the registration of the WRITE command at T7. 4Gb: x4, x8, x16 DDR3 SDRAM Synchronous ODT Mode Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Synchronous ODT Mode ODT Off During READs Because the device cannot terminate and drive at the same time, RTT must be disabled at least one-half clock cycle before the READ preamble by driving the ODT ball LOW (if either RTT,nom or RTT(WR) is enabled). RTT may not be enabled until the end of the postamble, as shown in the following example. Note: ODT may be disabled earlier and enabled later than shown in Figure 115 (page 204). PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 203 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 115: ODT During READs T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Address Valid CK# CK ODTLon = CWL + AL - 2 ODTLoff = CWL + AL - 2 ODT tAOF (MIN) RTT,nom RTT,nom RTT RL = AL + CL tAOF tAON (MAX) (MAX) DQS, DQS# DQ DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 Transitioning Note: Don't Care 1. ODT must be disabled externally during READs by driving ODT LOW. For example, CL = 6; AL = CL - 1 = 5; RL = AL + CL = 11; CWL = 5; ODTLon = CWL + AL - 2 = 8; ODTLoff = CWL + AL - 2 = 8. RTT,nom is enabled. RTT(WR) is a "Don't Care." 204 4Gb: x4, x8, x16 DDR3 SDRAM Synchronous ODT Mode Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Asynchronous ODT Mode Asynchronous ODT Mode Asynchronous ODT mode is available when the DRAM runs in DLL on mode and when either RTT,nom or RTT(WR) is enabled; however, the DLL is temporarily turned off in precharged power-down standby (via MR0[12]). Additionally, ODT operates asynchronously when the DLL is synchronizing after being reset. See Power-Down Mode (page 182) for definition and guidance over power-down details. In asynchronous ODT timing mode, the internal ODT command is not delayed by AL relative to the external ODT command. In asynchronous ODT mode, ODT controls RTT by analog time. The timing parameters tAONPD and tAOFPD replace ODTLon/tAON and ODTLoff/tAOF, respectively, when ODT operates asynchronously. The minimum RTT turn-on time (tAONPD [MIN]) is the point at which the device termination circuit leaves High-Z and ODT resistance begins to turn on. Maximum RTT turnon time (tAONPD [MAX]) is the point at which ODT resistance is fully on. tAONPD (MIN) and tAONPD (MAX) are measured from ODT being sampled HIGH. The minimum RTT turn-off time (tAOFPD [MIN]) is the point at which the device termination circuit starts to turn off ODT resistance. Maximum RTT turn-off time (tAOFPD [MAX]) is the point at which ODT has reached High-Z. tAOFPD (MIN) and tAOFPD (MAX) are measured from ODT being sampled LOW. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 205 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 116: Asynchronous ODT Timing with Fast ODT Transition T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 CK# CK CKE tIH tIS tIH tIS ODT tAONPD tAOFPD (MIN) (MIN) RTT,nom RTT tAONPD (MAX) tAOFPD (MAX) Transitioning Note: Don't Care 1. AL is ignored. Table 90: Asynchronous ODT Timing Parameters for All Speed Bins 206 Symbol Description tAONPD Min Max Unit tAOFPD Asynchronous RTT turn-on delay (power-down with DLL off) 2 8.5 ns Asynchronous RTT turn-off delay (power-down with DLL off) 2 8.5 ns 4Gb: x4, x8, x16 DDR3 SDRAM Asynchronous ODT Mode Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3 SDRAM Asynchronous ODT Mode Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) There is a transition period around power-down entry (PDE) where the DRAM's ODT may exhibit either synchronous or asynchronous behavior. This transition period occurs if the DLL is selected to be off when in precharge power-down mode by the setting MR0[12] = 0. Power-down entry begins tANPD prior to CKE first being registered LOW, and ends when CKE is first registered LOW. tANPD is equal to the greater of ODTLoff + 1tCK or ODTLon + 1tCK. If a REFRESH command has been issued, and it is in progress when CKE goes LOW, power-down entry ends tRFC after the REFRESH command, rather than when CKE is first registered LOW. Power-down entry then becomes the greater of tANPD and tRFC - REFRESH command to CKE registered LOW. ODT assertion during power-down entry results in an RTT change as early as the lesser of tAONPD (MIN) and ODTLon x tCK + tAON (MIN), or as late as the greater of tAONPD (MAX) and ODTLon x tCK + tAON (MAX). ODT de-assertion during power-down entry can result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff x tCK + tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff x tCK + tAOF (MAX). Table 91 (page 208) summarizes these parameters. If AL has a large value, the uncertainty of the state of RTT becomes quite large. This is because ODTLon and ODTLoff are derived from the WL; and WL is equal to CWL + AL. Figure 117 (page 208) shows three different cases: * ODT_A: Synchronous behavior before tANPD. * ODT_B: ODT state changes during the transition period with tAONPD (MIN) < ODTLon x tCK + tAON (MIN) and tAONPD (MAX) > ODTLon x tCK + tAON (MAX). * ODT_C: ODT state changes after the transition period with asynchronous behavior. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 207 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Table 91: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period Description Min Power-down entry transition period (power-down entry) Max Greater of: tANPD or tRFC tANPD Power-down exit transition period (power-down exit) - refresh to CKE LOW + tXPDLL ODT to RTT turn-on delay (ODTLon = WL - 2) Lesser of: tAONPD (MIN) (2ns) or ODTLon x tCK + tAON (MIN) Greater of: tAONPD (MAX) (8.5ns) or ODTLon x tCK + tAON (MAX) ODT to RTT turn-off delay (ODTLoff = WL - 2) Lesser of: tAOFPD (MIN) (2ns) or ODTLoff x tCK + tAOF (MIN) Greater of: tAOFPD (MAX) (8.5ns) or ODTLoff x tCK + tAOF (MAX) tANPD WL - 1 (greater of ODTLoff + 1 or ODTLon + 1) Figure 117: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry T0 T1 T2 T3 T4 T5 T6 T7 NOP REF NOP NOP NOP NOP NOP NOP T8 T9 T10 T11 T12 T13 Ta0 Ta1 Ta2 Ta3 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK 208 CKE Command tRFC (MIN) tANPD tAOF DRAM RTT A synchronous (MIN) RTT,nom ODTLoff tAOF ODTLoff + tAOFPD (MIN) (MAX) tAOFPD ODT B asynchronous or synchronous tAOFPD DRAM RTT B asynchronous or synchronous (MAX) (MIN) RTT,nom ODTLoff + tAOFPD (MAX) ODT C asynchronous tAOFPD DRAM RTT C asynchronous (MIN) RTT,nom tAOFPD Indicates break in time scale Note: 1. AL = 0; CWL = 5; ODTL(off) = WL - 2 = 3. Transitioning (MAX) Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM Asynchronous ODT Mode Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDE transition period ODT A synchronous 4Gb: x4, x8, x16 DDR3 SDRAM Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit) Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) The DRAM's ODT can exhibit either asynchronous or synchronous behavior during power-down exit (PDX). This transition period occurs if the DLL is selected to be off when in precharge power-down mode by setting MR0[12] to 0. Power-down exit begins tANPD prior to CKE first being registered HIGH, and ends tXPDLL after CKE is first registered HIGH. tANPD is equal to the greater of ODTLoff + 1tCK or ODTLon + 1tCK. The transition period is tANPD + tXPDLL. ODT assertion during power-down exit results in an RTT change as early as the lesser of tAONPD (MIN) and ODTLon x tCK + tAON (MIN), or as late as the greater of tAONPD (MAX) and ODTLon x tCK + tAON (MAX). ODT de-assertion during power-down exit may result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff x tCK + tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff x tCK + tAOF (MAX). Table 91 (page 208) summarizes these parameters. If AL has a large value, the uncertainty of the RTT state becomes quite large. This is because ODTLon and ODTLoff are derived from WL, and WL is equal to CWL + AL. Figure 118 (page 210) shows three different cases: * ODT C: Asynchronous behavior before tANPD. * ODT B: ODT state changes during the transition period, with tAOFPD (MIN) < ODTLoff x tCK + tAOF (MIN), and ODTLoff x tCK + tAOF (MAX) > tAOFPD (MAX). * ODT A: ODT state changes after the transition period with synchronous response. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 209 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 118: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 NOP NOP NOP NOP NOP Ta6 Tb0 Tb1 Tb2 Tc0 Tc1 Tc2 Td0 Td1 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK CKE COMMAND tXPDLL tANPD PDX transition period ODT A asynchronous tAOFPD (MIN) RTT,nom tAOFPD ODTLoff + tAOF (MIN) (MAX) tAOFPD ODT B asynchronous or synchronous RTT B asynchronous or synchronous tAOFPD (MAX) (MIN) RTT,nom ODTLoff + tAOF (MAX) ODTLoff ODT C synchronous DRAM RTT C synchronous tAOF (MAX) tAOF (MIN) RTT,nom 210 Indicates break in time scale Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Note: 1. CL = 6; AL = CL - 1; CWL = 5; ODTLoff = WL - 2 = 8. Transitioning Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit) DRAM RTT A asynchronous 4Gb: x4, x8, x16 DDR3 SDRAM Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit) Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) If the time in the precharge power-down or idle states is very short (short CKE LOW pulse), the power-down entry and power-down exit transition periods overlap. When overlap occurs, the response of the DRAM's RTT to a change in the ODT state can be synchronous or asynchronous from the start of the power-down entry transition period to the end of the power-down exit transition period, even if the entry period ends later than the exit period. If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit and power-down entry transition periods overlap. When this overlap occurs, the response of the DRAM's RTT to a change in the ODT state may be synchronous or asynchronous from the start of power-down exit transition period to the end of the powerdown entry transition period. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 211 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN Figure 119: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4 REF NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command CKE PDE transition period tANPD (MIN) PDX transition period tANPD tXPDLL Short CKE low transition period (R TT change asynchronous or synchronous) Indicates break in time scale 212 Note: Transitioning Don't Care 1. AL = 0, WL = 5, tANPD = 4. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Figure 120: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command CKE tANPD tXPDLL tANPD Short CKE HIGH transition period (RTT change asynchronous or synchonous) Indicates break in time scale Note: 1. AL = 0, WL = 5, tANPD = 4. Transitioning Don't Care 4Gb: x4, x8, x16 DDR3 SDRAM Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit) tRFC 4Gb: x4, x8, x16 DDR3 SDRAM Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit) 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef8417277b 4Gb_DDR3_SDRAM.pdf - Rev. M 4/13 EN 213 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved.