IRF 450 451 D86FR2,R 13 AMPERES . $00, 450 VOLTS RDS(ON) = 0.4.2 XOWER MOS [FET FIELD EFFECT POWER TRANSIS This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features e Polysilicon gate Improved stability and reliability e No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlled - High transconductance Low input capacitance Reduced drive requirement POINT .065(1.65) DIA. MAX. CAST TEMP. REFERENCE 205.00) SOURCE N-CHANNEL 0.845(21.47) MAX. CASE STYLE TQ-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) rm .358(9.09) MAX L. FF 2 seatina PLANE 0.043(1.09) oa >] fe 0.038(0.97) 1.050(26.68) _< - .426(10.82) MIN. MAX." 0.675{17.15) 0.650(16.51) 1.197(30.40) 1.177(29.90) ae _ 1 S73(50: 96) 4 Excellent thermal stability Ease of paralleling DRAIN i DRAIN 0.162(4.09) DIA. i 0.205(5.21) (CASE) 0. 15(3.84} 2 HOLES 0.440(41,18) 0.420( 10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF450/D86FR2 IRF451/D86FR1 UNITS Drain-Source Voltage Voss 500 450 Volts Drain-Gate Voltage, Ras = 1MO VpGR 500 450 Volts Continuous Drain Current @ Tc = 25C ID 13 13 A @ Tc = 100C 8 8 A Pulsed Drain Current lpm 52 52 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 150 150 Waits Derate Above 25C 1.2 1.2 wc Operating and Storage Junction Temperature Range Ty, TstG ~55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rgc 0.83 0.83 C/W Thermal Resistance, Junction to Ambient Raa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 169 electrical characteristics (To = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP | MAX UNIT off characteristics Drain-Source Breakdown Voltage IRF450/D86FR2 BVpss 500 _ _ Volts (Vas = OV, Ip =.250 uA) IRF451/D86FR1 450 Zero Gate Voltage Drain Current loss (Vps = Max Rating, V@s = OV, Tc = 25C) _ _ 250 uA (Vps = Max Rating, x 0.8, Vag = OV, To = 125C) 1000 Gate-Source Leakage Current (Ves = +20V) 9 less _ _ +100 nA on characteristics* Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts (Vos = Vas, |p = 250 wA) On-State Drain Current | 13 _ _ A (Vas = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vas = 10V, Ip = 7A) Rps(on) _ 0.3 0.4 Ohms Forward Transconductance (Vpg = 10V, Ip = 7A) Ofs 4.8 7.0 _ mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 2800 3000 pF Output Capacitance Vos = 25V Coss _ 330 600 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 55 200 pF switching characteristics Turn-on Delay Time Vps = 225V ta(on) _ 25 ns Rise Time Ip = 7A, Vag = 15V tr 20 _ ns Turn-off Delay Time RGEN = 500, Res = 12.50 | taioffy 120 ns Fall Time (Ras (EQuiv.) = 100) tf _ 65 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 13 A Pulsed Source Current Ism _ _ 52 A Diode Forward Voltage _ 0.9 Volt (To = 25C, Vag = OV, Ig = 13A) Vsp 14 ons Reverse Recovery Time ter - 590 _ ns (Ig = 13A, dig/dt = 100A/psec, To = 125C) Qrr 7.4 uC *Pulse Test: Pulse width = 300 us, duty cycle = 2% 100 80 60 40 20 200 1.0 DRAIN CURRENT (AMPERES} OPERATION IN AREA MAY BE LIMITED BY Rogion; > 0.6 0.4 'b SINGLE PULSE Tp = 25C (RF451/086FR1 02 \RF480/D86FR2 0.1 1 2 4 6 810 20 40 6080100 200 Vpg- DRAIN -SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 170 CONDITIONS: RDSs(ON) CONDITIONS: Ip = 7.0 A, Vag = 10V V@S(TH) CONDITIONS: tp = 250uA, Vpg = Vag Rosion) Rosion) AND Vagery) NORMALIZED 40 80 120 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion, AND Vagiru) VS- TEMP. ~40 Qo 160