A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCES IC = 200 mA 36 V
BVCEO IC = 200 mA 18 V
BVEBO IE = 5.0 mA 4.0 V
ICBO VCB = 15 V 1.0 mA
hFE VCE = 5.0 V IC = 1.0 A 5.0 ---
Cob VCB = 12.5 V f = 1.0 MHz 100 120 pF
GPE
η
ηη
ηVCC = 12.5 V Pout = 25 W f = 90 MHz 9.5
55 dB
%
NPN SILICON RF POWER TRANSISTOR
MRF234
DESCRIPTION:
The ASI MRF234 is Designed fo r
Large- Signal Amplifier Applications to
100 MHz.
FEATURES:
•
••
• Common Emitter
• Omnigold™ Metalization System
• PG = 9.5 dB min. at 25 W/ 90 MHz
MAXIMUM RATINGS
IC4.0 A
VCE 18 V
VCB 36 V
PDISS 70 W @ TC = 25 °C
TJ-65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 2.5 °C/W
PACKAGE STYLE .380" 4L STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H.090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
C
B
E
E
