VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2008
6-11-2008 REV C
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5186 thru 1N5190
1N5186 thru 1N5190
DESCRIPTION APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/424
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse
voltages from 100 to 600 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US”
suffix. Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast
and ultrafast device types in both through-hole and surface mount packages.
Packa
g
e E
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Popular JEDEC registered 1N5186 to 1N5190 series
• Voidless hermetically s ealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 100 to 600 Volts.
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/424
• Surface mount equivalents also avai lable in a square
end-cap MELF configuration with “US” suffix
• Fast recovery 3 Amp rectifiers 100 to 600 V
• Military and other high-reliability applications
• General rectifier applications i ncluding bridges,
half-bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65oC to +175oC
• Thermal Resistance: 20oC/W junction to lead at 3/8
inch (10 mm) lead length from body
• Thermal Impedance: 1.5oC/W @ 10 ms heating time
• Average Rectified For ward Current (IO): 3.0 Amps @ TA
= 25ºC and 0.700 Amps at TA = 150ºC
• Forward Surge Current: 80 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 750 mg
• See package dimensions on l ast page
ELECTRICAL CHARACTERISTICS
WORKING PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
FORWARD
VOLTAGE
VF
@ 9A (pulsed)
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
REVERSE
RECOVERY
TIME
trr
AVERAGE
RECTIFIED
CURRENT AMPS
IO
25oC 100oC 25oC 150oC
TYPE
VOLTS VOLTS MIN
VOLTS MAX
VOLTS µA µA
ns AMPS AMPS
1N5186
1N5187
1N5188
1N5189
1N5190
100V
200V
400V
500V
600V
120V
240V
480V
550V
660V
0.9V
1.5V
2.0
100
150
200
250
300
400
3.0
3.0
3.0
3.0
3.0
0.7
0.7
0.7
0.7
0.7
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5186 thru 1N5190
1N5186 thru 1N5190
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specifie d current.
VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the operating
temperature range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
trr Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
PACKAGE DIMEN SIONS
Lead Tolerance = + .002 -. 003 in
*Includes sections of the lead or fillet over which the l ead diameter is uncontrolled.
Microsemi
Scottsdale Division Page 2
Copyright © 2008
6-11-2008 REV C 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
