STP75NF75L STB75NF75L STB75NF75L-1 N-CHANNEL 75V - 0.009 - 75A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB75NF75L/-1 STP75NF75L VDSS RDS(on) ID 75 V 75 V <0.011 <0.011 75 A 75 A TYPICAL RDS(on) = 0.009 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 3 12 1 I2PAK TO-262 D 2PAK TO-263 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements . 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SOLENOID AND RELAY DRIVERS DC MOTOR CONTROL DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS Parameter Unit 75 V Drain-gate Voltage (RGS = 20 k) 75 V 15 V Gate- source Voltage ID(*) Drain Current (continuous) at TC = 25C 75 A ID Drain Current (continuous) at TC = 100C 70 A IDM(**) Ptot Drain Current (pulsed) 300 A Total Dissipation at TC = 25C 300 W Derating Factor 2 W/C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns E AS (2) Single Pulse Avalanche Energy 680 mJ -55 to 175 C Tstg Tj Storage Temperature Max. Operating Junction Temperature (*) Current limited by package (**) Pulse width limited by safe operating area. April 2002 . Value Drain-source Voltage (VGS = 0) (1) ISD 75A, di/dt 500A/s, VDD V (BR)DSS, Tj TJMAX. (2) Starting Tj = 25 oC, ID = 37.5A, VDD = 30V 1/11 STB75NF75L/-1 STP75NF75L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ C/W C/W C 0.5 62.5 300 ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 A Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating TC = 125C Gate-body Leakage Current (VDS = 0) VGS = 15 V VGS = 0 Min. Typ. Max. 75 Unit V 1 10 A A 100 nA Max. Unit 2.5 V 0.009 0.010 0.011 0.013 Typ. Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 A R DS(on) Static Drain-source On Resistance VGS = 10 V VGS = 5 V ID = 37.5 A ID = 37.5 A Min. Typ. 1 DYNAMIC Symbol 2/11 Parameter gfs (*) Forward Transconductance C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 37.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 120 S 4300 660 205 pF pF pF STB75NF75L/-1 STP75NF75L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 40 V ID = 37.5 A VGS = 4.5 V R G = 4.7 (Resistive Load, Figure 3) 35 150 Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 60V ID = 75 A VGS= 5V 75 18 31 90 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 40 V ID = 37.5 A VGS = 4.5 V RG = 4.7, (Resistive Load, Figure 3) 110 60 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (*) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 75 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 75 A di/dt = 100A/s T j = 150C VDD = 20 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. V GS = 0 100 380 7.5 Max. Unit 75 300 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/11 STB75NF75L/-1 STP75NF75L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/11 STB75NF75L/-1 STP75NF75L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/11 STB75NF75L/-1 STP75NF75L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 STB75NF75L/-1 STP75NF75L D2PAK MECHANICAL DATA DIM. MIN. mm. TYP. MAX. MIN. inch. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 B 0.03 0.7 0.23 0.93 0.001 0.028 0.009 0.037 B2 C 1.14 0.45 1.7 0.6 0.045 0.018 0.067 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 E 10 10.4 0.394 E1 G 8.5 4.88 5.28 8 0.315 0.409 0.334 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 M 1.4 2.4 1.75 3.2 0.055 0.094 0.069 0.126 R V2 0 8 0 0.4 0.016 8 7/11 STB75NF75L/-1 STP75NF75L TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 8/11 STB75NF75L/-1 STP75NF75L TO-220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 0.70 0.019 D1 TYP. 1.27 E MAX. 0.050 0.49 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 9/11 STB75NF75L/-1 STP75NF75L D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 10/11 1.574 MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB75NF75L/-1 STP75NF75L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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