STP75NF75L - STMicroelectronics

1/11April 2002

STP75NF75L

STB75NF75L STB75NF75L-1

N-CHANNEL 75V - 0.009 Ω-75AD

PAK/I2PAK/TO-220

STripFETII POWER MOSFET

■TYPICAL RDS(on) = 0.009Ω

■EXCEPTIONAL dv/dt CAPABILITY

■100% AVALANCHE TESTED

■LOW THRESHOLD DRIVE

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

■SOLENOID AND RELAY DRIVERS

■DC MOTOR CONTROL

■DC-DC CONVERTERS

■AUTOMOTIVE ENVIRONMENT

TYPE VDSS RDS(on) ID

STB75NF75L/-1

STP75NF75L 75 V

75 V <0.011 Ω

<0.011 Ω75 A

75 A

123

13123

TO-220

D2PAK

TO-263

I2PAK

TO-262

ABSOLUTE MAXIMUM RATINGS

(•) Current limited by package

(••) Pulse width limitedby safe operating area. (1) ISD ≤

75A, di/dt ≤

500A/µs, VDD ≤V(BR)DSS,T

j≤T

JMAX.

(2) Starting Tj=25o

C, ID= 37.5A, VDD = 30V

Symbol Parameter Value Unit

VDS Drain-source Voltage (VGS =0) 75 V

VDGR Drain-gate Voltage (RGS =20kΩ)75 V

VGS Gate- source Voltage ±15 V

ID(•)Drain Current (continuous) at TC=25°C75 A

IDDrain Current (continuous) at TC= 100°C70 A

IDM(••)Drain Current (pulsed) 300 A

Ptot Total Dissipation at TC=25°C300W

Derating Factor 2 W/°C

dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns

EAS (2) Single Pulse Avalanche Energy 680 mJ

Tstg Storage Temperature -55 to 175 °C

TjMax. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

STB75NF75L/-1 STP75NF75L

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THERMAL DATA

ELECTRICAL CHARACTERISTICS (Tcase =25°C unless otherwise specified)

OFF

ON (*)

DYNAMIC

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose

Max

Typ

0.5

62.5

300

°C/W

°C

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source

Breakdown Voltage ID= 250 µAV

GS =0 75 V

IDSS Zero Gate Voltage

Drain Current (VGS =0) V

DS = Max Rating

VDS = Max Rating TC= 125°C1

10 µA

µA

IGSS Gate-body Leakage

Current (VDS =0) V

GS =±15 V ±100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VGS(th) Gate Threshold Voltage VDS =V

GS ID= 250 µA1 2.5 V

RDS(on) Static Drain-source On

Resistance VGS =10V I

D= 37.5 A

VGS =5V I

D= 37.5 A 0.009

0.010 0.011

0.013 Ω

Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (*) Forward Transconductance VDS = 15 V ID= 37.5 A 120 S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0 4300

660

205

3/11

STB75NF75L/-1 STP75NF75L

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(*)Pulsed: Pulse duration = 300 µs,duty cycle 1.5 %.

(•)Pulse width limited by safe operating area.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on)

trTurn-on Delay Time

Rise Time VDD =40V I

D= 37.5 A

RG= 4.7 Ω VGS = 4.5 V

(Resistive Load, Figure 3)

150 ns

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 60V ID=75AV

GS=5V 75

90 nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off)

tfTurn-off Delay Time

Fall Time VDD =40V I

D= 37.5 A

RG= 4.7Ω, VGS = 4.5 V

(Resistive Load, Figure 3)

110

60 ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ISD

ISDM (•)Source-drain Current

Source-drain Current (pulsed) 75

300 A

VSD (*) Forward On Voltage ISD =75A VGS =0 1.3 V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 75 A di/dt = 100A/µs

VDD =20V T

j= 150°C

(see test circuit, Figure 5)

100

380

7.5

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area Thermal Impedance

STB75NF75L/-1 STP75NF75L

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Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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STB75NF75L/-1 STP75NF75L

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

STB75NF75L/-1 STP75NF75L

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Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3:Switching TimesTest Circuits ForResistive

Load Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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STB75NF75L/-1 STP75NF75L

DIM. mm. inch.

MIN. TYP. MAX. MIN. TYP. TYP.

A4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B0.7 0.93 0.028 0.037

B2 1.14 1.7 0.045 0.067

C0.45 0.6 0.018 0.024

C2 1.21 1.36 0.048 0.054

D8.95 9.35 0.352 0.368

D1 8 0.315

E10 10.4 0.394 0.409

E1 8.5 0.334

G4.88 5.28 0.192 0.208

L15 15.85 0.591 0.624

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.069

M2.4 3.2 0.094 0.126

R0.4 0.016

V2 0°8°0°8°

D2PAK MECHANICAL DATA

STB75NF75L/-1 STP75NF75L

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DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531

L1 3.48 3.78 0.137 0.149

L2 1.27 1.4 0.050 0.055

CA1

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

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STB75NF75L/-1 STP75NF75L

DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.051

D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067

F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106

H2 10.0 10.40 0.393 0.409

L2 16.4 0.645

L4 13.0 14.0 0.511 0.551

L5 2.65 2.95 0.104 0.116

L6 15.25 15.75 0.600 0.620

L7 6.2 6.6 0.244 0.260

L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

Dia.

TO-220 MECHANICALDATA

P011C

STB75NF75L/-1 STP75NF75L

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DIM. mm inch

MIN. MAX. MIN. MAX.

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0075 0.082

R 50 1.574

T 0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

DIM. mm inch

MIN. MAX. MIN. MAX.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

BASE QTY BULK QTY

1000 1000

REEL MECHANICAL DATA

* on sales type

TUBE SHIPMENT (no suffix)*

TAPE AND REEL SHIPMENT (suffix ”T4”)*

D2PAK FOOTPRINT

TAPE MECHANICAL DATA

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STB75NF75L/-1 STP75NF75L

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