PACKAGE DIMENSIONS
0.173 (4.39)
0.120 (3.05) 0.240 (6.10)
0.183 (4.65)
0.500 (12.7)
MIN
0.020 (0.51)
SQ. (4X)
0.100 (2.54)
0.083 (2.11)
OPTICAL
CENTERLINE
PIN 1 COLLECTOR
PIN 2 EMITTER PIN 4 CATHODE
PIN 3 ANODE
PIN 1 INDICATOR
0.083 (2.11)
3
4
2
1
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
3. Pins 2 and 4 typically .050” shorter than pins 1 and 3.
4. Dimensions controlled at housing surface.
NOTES (Applies to Max Ratings and Characteristics Tables.)
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning
agents.
4. Soldering iron 1/16” (1.6mm) from housing.
5. As long as leads are not under any spring tension.
6. D is the distance from the sensor face to the reflective surface.
7. Cross talk (ICX) is the collector current measured with the
indicator current on the input diode and with no reflective surface.
8. Measured using an Eastman Kodak neutral white test card with
90% diffused reflecting as a reflective surface.
1 of 3 100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
FEATURES
Phototransistor Output
No contact surface sensing
Unfocused for sensing diffused surfaces
Compact Package
Daylight filter on sensor
14
23
SCHEMATIC
Parameter Symbol Rating Units
Operating Temperature TOPR -40 to +85 °C
Storage Temperature TSTG -40 to +85 °C
Lead Temperature (Solder Iron)(2,3) TSOL-I 240 for 5 sec °C
Lead Temperature (Solder Flow)(2,3) TSOL-F 260 for 10 sec °C
EMITTER
Continuous Forward Current IF50 mA
Reverse Voltage VR5V
Power Dissipation(1) PD100 mW
SENSOR
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector Voltage VECO V
Power Dissipation(1) PD100 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
EMITTER IF= 20 mA VF——1.7 V
Forward Voltage
Reverse Current VR= 5 V IR——100 µA
Peak Emission Wavelength IF= 20 mA !PE 940 nm
SENSOR IC= 1 mA BVCEO 30 —— V
Collector-Emitter Breakdown
Emitter-Collector Breakdown IE= 0.1 mA BVECO 5—— V
Dark Current VCE = 10 V, IF= 0 mA ID——100 nA
COUPLED IF= 20 mA, VCE = 5 V IC(ON) 0.300 —— mA
QRD1113 Collector Current D = .050 (6,8)
QRD1114 Collector Current IF= 20 mA, VCE = 5 V IC(ON) 1—— mA
D = .050 (6,8)
Collector Emitter IF= 40 mA, IC = 100 µA VCE (SAT) ——0.4 V
Saturation Voltage D = .050 (6,8)
Cross Talk IF= 20 mA, VCE = 5 V, EE= 0 (7) ICX .200 10 µA
Rise Time VCE = 5 V, RL = 100 "tr10 µs
Fall Time IC(ON) = 5 mA tf50 µs
ELECTRICAL / OPTICAL CHARACTERISTICS (TA= 25°C)
2 of 3 100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
3 of 3 100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) TA - AMBIENT TEMPERATURE (˚C)
TA - AMBIENT TEMPERATURE (˚C) REFLECTIVE SURFACE DISTANCE (mils)
VF - FORWARD VOLTAGE (mA)ID - COLLECTOR DARK CURRENT
NORMALIZED - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
1.60 10.0 1.0
0.8
0.6
0.4
0.2
0
1.00
0.10
0.01
.001
1.0
.9
0-50 -25 25 50 750
-50 -25 25 50 75 1000
10 20 30 40 50
1.40
1.20
1.00
0.20
0.60
0.40
0.20 0.1
102
101
10
1.0
10-1
10-2
10-3
1.0 10 100
Fig. 1 Forward Voltage vs.
Forward Current Fig. 2 Normalized Collector Current vs.
Forward Current Fig. 3 Normalized Collector Current vs.
Temperature
Fig. 4 Normalized Collector Dark Current vs.
Temperature Fig. 5 Normalized Collector Current vs.
Distance
IF = 10 mA
VCE = 5 V
.8
.7
.6
.5
.4
.3
.2
.1
00 50 100 150 200 250 300 350 400 450 500
VCE = 5 V
D = .05"
IF = 20 mA
VCE = 5 V
VCE = 10 V
TYPICAL PERFORMANCE CURVES