HSDL4270 - Lite-On Electronics

Part Number Lead Form Shipping Option

HSDL-4270 Straight Bulk

1.14 ± 0.2

5.8 ± 0.2

5.0 ± 0.2

31.6 min.

0.7 max.

8.7 ± 0.2

2.54

0.50 ± 0.1

CATHODE

FLAT

1.0 min.

Features

••

•High Power AlGaAs LED Technology

••

•940 nm Wavelength

••

•T-1¾ Package

••

•Low Cost

••

•Low Forward Voltage: 1.3V at 20mA

Applications

••

•Industrial Infrared Equipments and Applications

(Smoke Detectors etc)

••

•Consumer Electronics (Infrared Remote Controller

etc)

••

•Infrared spotlight for cameras

••

•Discrete Interrupters

••

•Infrared source for optical counters and card readers

Description

The HSDL-4270 Infrared emitter was designed

for applications that require high power and

low forward voltage. It utilizes Aluminum

Galium Arsenide (AlGaAs) LED technology and

is optimized for efficiency at emission

wavelengths of 940 nm. The material used

produces high radiant efficiency over a wide

range of currents. The emitter is packaged in

clear T-1¾ (5mm) package.

HSDL-4270

High-Performance T-1¾ (5mm) AlGaAs Infrared (940nm) Lamp

Datasheet

Recommended Operating Conditions

Parameter Symbol Min Max Unit Reference

Operating Temperature TO-40 85 °C

Parameter Symbol Min. Typ. Max. Unit Condition Reference

Forward Voltage VF-1.3

1.5

1.4

1.7

FDC=20mA

IFDC=100mA

Figure 2

Figure 3

Forward Voltage

Temperature Coefficient

∆V/∆T--1.4-mV/°CI

FDC=100mA Figure 4

Series Resistance RS-3.0-OhmsI

FDC=100mA

Diode Capacitance CO-27-pFV

bias=0V,

f=1MHz

Thermal Resistance,

Junction to Ambient

Rθja - 300 - °C/W

Parameter Symbol Min. Typ. Max. Unit Condition Reference

Radiant On-Axis Intensity IE76 100 - mW/Sr IFDC=100mA Figure 5

Radiant On-Axis Intensity

Temperature Coefficient

∆IE/∆T- -0.48 - %/°C IFDC=100mA

Viewing Angle 2θ1/2 -15- ° Figure 7

Peak Wavelength λpk - 940 - nm Figure 1

Peak wavelength

Temperature Coefficient

∆λ/∆T-0.26- nm/°CI

FDC=100mA

Spectral Width ∆λ 45 - nm IFDC=20mA Figure 1

Optical Rise and Fall Time tr/tf1.3 - µsIFDC=100mA

Duty Ratio = 50%

Pulse Width=10µs

Parameter Symbol Minimum Maximum Unit Reference

Peak Forward Current IFPK - 500 mA Figure 3

Duty cycle = 20%

Pulse Width = 100us

Forward Current IFDC -100 mA[1]

Power Dissipation PDISS -170 mW

Reverse Voltage VR5- VI

R=100uA

Storage Temperature TS-40 100 °C

LED Junction Temperature TJ110 °C

Lead Soldering Temperature 260 for 5 sec °C

Notes:

1. Derate as shown in Figure 6.

Absolute Maximum Ratings at 25°°

°°

°C

Electrical Characteristics at 25°°

°°

°C

Optical Characteristics at 25°°

°°

°C

Figure 1. Relative Radiant Intensity vs. Wavelength Figure 2. DC Forward Current vs. Forward Voltage

Peak Wavelength Vs Rel Radiant Intensity

0.2

0.4

0.6

0.8

1.0

1.2

800 850 900 950 1000

Peak Wavelength - nm

Relative Radiant Intensity

V-I Characteristics

100

0 0.5 1 1.5

Forward Voltage - Vf(V)

Forward Current - If(mA)

Peak Forward Voltage Vs Peak Forward Current

100

1000

0 0.5 1 1.5 2 2.5

Peak Forward Voltage-Vfpk(V)

Peak Forward Current-Ifpk(mA)

Forward Voltage Vs Temperature

0.5

0.7

0.9

1.1

1.3

1.5

1.7

-40 -20 0 20 40 60 80 100 120

Temperature

Forward Voltage

at Iled=20mA

at Iled=100mA

Figure 4. Forward Voltage vs. Ambient Temperature

Figure 3. Peak Forward Current vs. Forward Voltage

Figure 5. Relative Radiant Intensity vs. DC Forward Curren

Forward Current Vs Relative Radiant Intensity

0.2

0.4

0.6

0.8

1.0

1.2

0 20 40 60 80 100 120

Forward Current in mA

Relative Radiant Intensity

Maximum Permisible DC forward current vs. ambient temperature

100

110

0 102030405060708090

TA- Ambient Temperature -˚C

IFDC MAX - Maximum DC

Forward Current - mA

300

Figure 6. DC Forward Current vs. Ambient Temperature Derated

Based on TJMAX=110°°

°°

°C

Figure 7. Radiant Intensity vs. Angular Displacement

4270-Angle Vs Relative Radiant Intensity

0.2

0.4

0.6

0.8

1.0

1.2

-90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90

Angle in degrees

Relative Radiant Intensity

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http://optodatabook.liteon.com/databook/databook.aspx