May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage applications requiring a low current high side switch. BSS84: -0.13A, -50V. RDS(ON) = 10 @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10 @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________________ S G BSS110 D (TO-236AB) BSS84 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted BSS84 BSS110 Units VDSS Drain-Source Voltage -50 V VDGR Drain-Gate Voltage (RGS < 20 K) -50 V VGSS Gate-Source Voltage - Continuous 20 V ID o Drain Current - Continuous @ TA = 30/35 C - Pulsed -0.13 -0.17 o -0.52 -0.68 TA = 25C 0.36 0.63 @ TA = 25 C PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds A W -55 to 150 C 300 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (c) 2000 Fairchild Semiconductor Corporation 350 200 C/W BSS84 Rev. C2 / BSS110. Rev. A3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Conditions Type Min -50 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A All IDSS Zero Gate Voltage Drain Current VDS = -50 V, VGS = 0 V All V TJ = 125C Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V All All A -60 A -0.1 A -10 nA -1.75 -2 V VDS = -25 V, VGS = 0 V IGSSR -15 ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -1 mA RDS(ON) Static Drain-Source On-Resistance VGS = -5V, ID = -0.10 A BSS84 3.2 10 VGS = -10 V, ID = -0.17 A BSS110 2.2 10 gFS Forward Transconductance -0.8 VDS = -25 V, ID = -0.10A BSS84 0.05 0.27 VDS = -10 V, ID = -0.17 A BSS110 0.05 0.29 VDS = -25 V, VGS = 0 V, f = 1.0 MHz BSS84 37 45 BSS110 37 40 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance pF Coss Output Capacitance All 16 25 pF Crss Reverse Transfer Capacitance All 5 12 pF SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) tf VDD = -30 V, ID = -0.27 A, VGS = -10 V, RGEN = 50 All 12 nS All 50 nS Turn - Off Delay Time All 10 nS Turn - Off Fall Time All 25 nS A DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Continuous Source Diode Current Maximum Pulsed Source Diode Current (Note 1) Drain-Source Diode Forward Voltage BSS84 -0.13 BSS110 -0.17 BSS84 -0.52 BSS110 -0.68 VGS = 0 V, IS = -0.26 A (Note 1) BSS84 -0.95 -1.2 VGS = 0 V, IS = -0.34 A (Note 1) BSS110 -1 -1.2 A V Note: 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. BSS84 Rev. C2 / BSS110. Rev. A3 Typical Electrical Characteristics 3 -0.8 -8.0 -6.0 -5.0 R DS(on) , NORMALIZED VGS = -10V -4.5 -4.0 -0.6 -3.5 -0.4 -3.0 -0.2 -2.5 DRAIN-SOURCE ON-RESISTAN CE ID , DRAIN-SOURCE CURRENT (A) -1 V GS = -3V -3.5 2 .5 -4 .0 2 -4.5 -5.0 1 .5 -6 .0 -8 .0 -1 0 1 0 .5 0 -1 -2 -3 -4 V DS , DRAIN-SOURCE VOLTAGE (V) -5 -0.2 -6 I Figure 1. On-Region Characteristics -0.8 1.4 R DS(on) , NORMALIZED V GS = -10V 1.2 1 0.8 0.6 -50 VGS = -10V 2.5 T = 125C J 2 1.5 25C 1 -55C 0.5 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (C) 125 150 -0.2 -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 1.1 TJ = -55C 25C 125C Vth , NORMALIZED -0 .8 -0 .6 -0 .4 -0 .2 -2 -4 -6 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -8 GATE-SOURCE THRESHOLD VOLTAGE -1 V DS = -10V -1 Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance Variation with Temperature 0 -1 3 I D = -0.13A DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -0.4 -0.6 , DRA IN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 I D , DRAIN CURRENT (A) D V DS = V GS I D = -1m A 1.05 1 0.95 0.9 0.85 -5 0 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 150 Figure 6. Gate Threshold Variation with Temperature BSS84 Rev. C2 / BSS110. Rev. A3 Typical Electrical Characteristics (continued) 1 , REVERSE DRAIN CURRENT (A) I D = -250A 1 .0 5 1 0.2 0 .9 -50 -25 0 TJ 25 50 75 100 , JUNCTION TEMPERATURE (C) 125 25C -55C 0.01 0.005 0.001 0.2 150 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) 10 50 -VGS , GATE-SOURCE VOLTAGE (V) 70 C iss 30 C oss 20 10 C rss 5 f = 1 MHz V GS = 0V 3 2 0 .1 V DS = -10V I D = -0.13A -20V 8 -40V 6 4 2 0 0 .2 0 .5 1 2 5 10 -V DS , DRA IN TO SOURCE VOLTAGE (V) 20 30 50 0 0 .5 VDD t d(on) 2 t off tr t d(off) tf 90% 90% V OUT D VOUT R GEN 1 .5 t on RL V IN 1 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics Figure 9. Capacitance Characteristics VGS 1.6 Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 7. Breakdown Voltage Variation with Temperature CAPACITANCE (pF) T J = 125C 0.1 0.05 S 0 .9 5 VGS = 0 V 0.5 -I , NORMALIZED SBV D S DRAIN-SOURCE BREAKDOWN VOLTAGE 1 .1 10% 10% DUT G 90% S V IN 50% 50% 10% INVERTED PULSE W IDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms BSS84 Rev. C2 / BSS110. Rev. A3 Typical Electrical Characteristics (continued) 2 T J = -55C -I D , DRA IN CURRENT (A) 1 0 .4 25C 0 .3 125C 0 .2 0 .1 V DS = -10V 10 0.5 RD S (O Li N) t mi 1m 10 10 0.1 0m 1s 10 0.05 V GS = -10V 0u s s ms s s DC SINGLE PULSE T A = 25C 0.01 g FS , TRANSCONDUCTANCE (SIEM ENS) 0 .5 0 -0.2 -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 -1 Figure 13. Transconductance Variation with Drain Current and Temperature 0.005 1 2 5 10 20 30 - V DS , DRAIN -SOURCE VOLTAGE (V) 50 80 Figure 14. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0 .2 0.1 0.05 R JA (t) = r(t) * R JA o R = 3 5 0 C/W JA 0 .1 0 .05 0 .02 P(pk) 0 .01 t1 0.01 t2 Single Pulse TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve Note : Characterization performed using a circuit board with 175oC/W typical case-to-ambient thermal resistance. BSS84 Rev. C2 / BSS110. Rev. A3 TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * * ; Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code January 2000, Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3