O3103TN (KT)/71598HA (KT)/4087TA, TS No.2093-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definiton CRT Display
Video Output Applications
Ordering number:ENN2093
2SA1479/2SC3789
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 003)–(V
egatloVrettimE-ot-rotcelloCV
OEC 003)–(V
egatloVesaB-ot-rettimEV
OBE 5)–(V
tnerruCrotcelloCI
C001)–(Am
tnerruCrotcelloCkaePI
PC 002)–(Am
noitapissiDrotcelloCP
C5.1W
7W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Package Dimensions
unit:mm
2042B
[2SA1479/2SC3789]
Applications
· High-definition CRT display.
· Color TV chroma output, high breakdown voltage
drivers.
Features
· High breakdown voltage (VCEO≥300V).
· Excellent high frequency characteristic
: Cre=1.8pF (typ).
· Adoption of MBIT process.
· No insulator required for mounting, which contrib-
utes to reducing the cost and the number of manufac-
turing processes.
· Plastic-covered heat sink facilitating high-density
mounting.
· Directly interchange able with TO-126 because the
package is designed based on the conventional
package dimensions.
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
˚C
˚C
Tc=25˚C
( ) : 2SA1479
Specifications
Absolute Maximum Ratings at Ta = 25˚C
4.0
1.0
1.0
8.0
1.6
0.8
0.8
0.75
1.5
7.5
3.0 1.4
11.0
15.5
3.3
3.0
0.7
2.4 4.8
1.7
123
No.2093-2/5
2SA1479/2SC3789
* : The 2SA1479/2SC3789 are classified by 10mA hFE as follows :
knaRCDEF
hEF 08ot04021ot06002ot001023ot061
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V002)–(= E0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=1.0)–(Aµ
niaGtnerruCCDh
EF VEC I,V01)–(= CAm01)–(=*04*023
tcudorPhtdiwdnaB-niaGf
TVEC I,V03)–(= CAm01)–(=07zHM
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am02)–(= BAm2)–(=6.0)–(V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am02)–(= BAm2)–(=0.1)–(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0=003)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞003)–(V
egatoVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=5)–(V
ecnaticapaCtuptuOC
bo VBC zHM1=f,V03)–(= 6.2Fp
)1.3(Fp
ecnaticapaCrefsnarTesreveRC
er VBC zHM1=f,V03)–(= 8.1Fp
)3.2(Fp
ITR03763
IC -- VCE
0--2--4--6--8--10
0
--1
--2
--3
--4
--5
--6
--7
--8
IB=0
ITR03764
IC -- VCE
1068240
0
1
2
3
4
5
6
7
8
2SA1479
IB=0
2SC3789
ITR03765
IC -- VCE
0--40 --80 --120 --160 --200
0
--4
--5
--2
--3
--1
--6
--7
--8
IB=0
ITR03766
IC -- VCE
120 160 20080400
0
2
3
1
4
5
6
7
8
2SA1479
IB=0
2SC3789
--40µA
--30µA
--20µA
--10µA
40µA
30µA
20µA
10µA
--40µA
--30µA
--10µA
--20µA
40µA
30µA
20µA
10µA
IV IV
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
No.2093-3/5
2SA1479/2SC3789
ITR03767
IC -- VBE
0
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
0
--
20
--
40
--
60
--
80
--
100
--
120
2SA1479
VCE=--5V
Ta=75
°C
25°C
--25
°C
ITR03768
IC -- VBE
0 0.2 0.4 0.6 0.8 1.0
0
20
40
60
80
100
120
2SC3789
VCE=5V
Ta=75°C
25
°C
--25°C
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
--
1.0 23 35757
--
10 7
--
100
522
7
100
10
5
7
5
2
3
2
ITR03771
fT -- IC2SA1479
VCE=--30V
1.0 23 35757 10 7100
522
7
100
10
5
2
2
7
5
3
ITR03772
fT -- IC2SC3789
VCE=30V
7
--
10 27
--
100 23
--
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03773
Cob -- VCB 2SA1479
f=1MHz 2SC3789
f=1MHz
710 27
100 23
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03774
Cob -- VCB
1000
100
10
ITR03769
hFE -- IChFE -- IC
2357 7
3
25 2
--
1.0
--
10
--
100
2
3
5
7
7
2
3
5
1.0 37723 5 10 100
522
7
10
5
100
7
1000
5
3
2
3
2
ITR03770
2SA1479
VCE=--10V 2SC3789
VCE=10V
Ta=75°C
25
°C
--25
°C
Ta=75
°C
25°C
--25°C
DC Current Gain, hFE
Collector Current, IC–mA
DC Current Gain, hFE
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
No.2093-4/5
2SA1479/2SC3789
7
--
10 27
--
100 2
3
--
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03775
Cre -- VCB
2SA1479
f=1MHz 2SC3789
f=1MHz
710 27
100 23
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03776
Cre -- VCB
Reverse Transfer Capacitance, Cre – pF
Collector-to-Base Voltage, VCB -- V
Reverse Transfer Capacitance, Cre – pF
Collector-to-Base Voltage, VCB -- V
0 20 40 60 80 100 120 140 160
0
2
1
3
6
7
8
4
5
PC -- Ta
ITR03781
ITR03779
VBE(sat) -- IC
557 --10 22
--1.0 233577--100
--1.0
--10
5
7
3
2
5
7
3
2
2SA1479
IC / IB=10
ITR03780
VBE(sat) -- IC
7557 10 22
1.0 23357
100
3
1.0
5
3
5
7
2
2
10
72SC3789
IC / IB=10
ITR03782
A S O
DC operation (Ta=25
°C)
DC operation
10ms
1ms
500µs
10
3
5
7
2
2
3
5
3
2355
7
57 100 23
10
7
2
100
ICP=200mA
IC=100mA
2SA1479 / 2SC3789
2SA1479 / 2SC3789
ITR03777
VCE(sat) -- IC
557 --10 22
--1.0 233577--100
--0.1
--1.0
5
3
3
5
7
7
--10
5
7
2
3
2
2SA1479
IC / IB=10
ITR03778
VCE(sat) -- IC
557 10 22
1.0 233577100
0.1
7
1.0
5
7
3
3
5
2
10
5
7
3
2
2SC3789
IC / IB=10
(
Tc=25
°C)
No heat sink
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC– mA Collector Current, IC–mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Dissipation, PC–W
Ambient Temperature, Ta – ˚C
(For PNP, minus sign is omitted.)
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
PS No.2093-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
2SA1479/2SC3789
