Ordering number:ENN2093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1479/2SC3789 High-Definiton CRT Display Video Output Applications Applications Package Dimensions * High-definition CRT display. * Color TV chroma output, high breakdown voltage drivers. unit:mm 2042B [2SA1479/2SC3789] 8.0 * High breakdown voltage (VCEO300V). * Excellent high frequency characteristic : Cre=1.8pF (typ). * Adoption of MBIT process. * No insulator required for mounting, which contributes to reducing the cost and the number of manufacturing processes. * Plastic-covered heat sink facilitating high-density mounting. * Directly interchange able with TO-126 because the package is designed based on the conventional package dimensions. 3.3 1.5 7.5 3.0 11.0 4.0 1.0 1.4 Features 1.0 15.5 3.0 1.6 0.8 0.8 0.7 0.75 1 2 3 1.7 2.4 4.8 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML ( ) : 2SA1479 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Symbol Conditions Ratings Unit VCBO VCEO (-)300 V (-)300 V VEBO IC (-)5 (-)100 mA ICP (-)200 mA 1.5 W 7 150 W C -55 to +150 C Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3103TN (KT)/71598HA (KT)/4087TA, TS No.2093-1/5 2SA1479/2SC3789 Electrical Characteristics at Ta = 25C Parameter Symbol Ratings Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(-)200V, IE=0 (-)0.1 A Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)0.1 A DC Current Gain hFE fT VCE=(-)10V, IC=(-)10mA Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage 320* VCE=(-)30V, IC=(-)10mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage 40* 70 MHz IC=(-)20mA, IB=(-)2mA (-)0.6 V IC=(-)20mA, IB=(-)2mA (-)1.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(-)10A, IE=0 (-)300 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10A, IC=0 (-)300 V Emitter-to-Base Breakdown Votage Output Capacitance Cob Reverse Transfer Capacitance Cre (-)5 V VCB=(-)30V, f=1MHz VCB=(-)30V, f=1MHz 2.6 pF (3.1) pF 1.8 pF (2.3) pF * : The 2SA1479/2SC3789 are classified by 10mA hFE as follows : Rank C D E F hFE 40 to 80 60 to 120 100 to 200 160 to 320 --8 IC -- VCE --40A --6 --5 --30A --4 --20A --3 --2 --10A --1 40A 6 5 30A 4 20A 3 2 10A 1 IB=0 --2 --4 --6 --8 Collector-to-Emitter Voltage, VCE - V --8 IC -- VCE --7 --40A 0 --10 --3 --10A --1 6 8 10 ITR03764 IC -- VCE 8 Collector Current, IC - mA Collector Current, IC - mA --20A --2 4 2SC3789 40A 7 --30A --4 2 Collector-to-Emitter Voltage, VCE - V 2SA1479 --5 IB=0 0 ITR03763 --6 0 2SC3789 7 Collector Current, IC - mA Collector Current, IC - mA --7 0 0 IC -- VCE 8 2SA1479 6 30A 5 4 20A 3 2 10A 1 IB=0 0 --40 --80 --120 --160 Collector-to-Emitter Voltage, VCE - V I V --200 ITR03765 0 IB=0 0 40 80 120 160 200 Collector-to-Emitter Voltage, VCE - V I ITR03766 V No.2093-2/5 2SA1479/2SC3789 IC -- VBE --120 --40 --25C 25C 80 60 40 --20 20 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE - V 0 0 --1.0 3 Ta=75C 25C 2 --25C 100 5 3 Ta=75C 2 25C 5 2 5 7 --10 2 5 3 Collector Current, IC - mA 7 --100 10 1.0 2 3 5 7 10 2 3 5 7 5 3 2 10 fT -- IC 2SC3789 VCE=30V 7 5 3 2 10 7 7 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector Current, IC - mA 7 --100 5 2 5 7 1.0 2 3 5 7 2 10 3 5 2SC3789 f=1MHz Output Capacitance, Cob - pF 2SA1479 f=1MHz 7 5 3 2 1.0 7 --1.0 2 100 ITR03772 Cob -- VCB 2 10 7 Collector Current, IC - mA ITR03771 Cob -- VCB 2 Output Capacitance, Cob - pF 2 100 ITR03770 100 100 5 7 Collector Current, IC - mA 2 Gain-Bandwidth Product, fT - MHz 2SA1479 VCE=--30V 5 2 ITR03769 fT -- IC 2 --25C 7 3 3 1.0 ITR03768 2SC3789 VCE=10V 5 2 2 0.8 7 3 --1.0 0.6 hFE -- IC 100 7 10 0.4 1000 DC Current Gain, hFE 5 0.2 Base-to-Emitter Voltage, VBE - V 2SA1479 VCE=--10V 7 0 ITR03767 hFE -- IC 1000 DC Current Gain, hFE Ta=75 C --25C Collector Current, IC - mA --60 25C --80 Gain-Bandwidth Product, fT - MHz 2SC3789 VCE=5V 100 Ta=75 C Collector Current, IC - mA --100 0 IC -- VBE 120 2SA1479 VCE=--5V 10 7 5 3 2 1.0 7 2 3 5 7 2 3 5 7 --100 2 --10 Collector-to-Base Voltage, VCB -- V ITR03773 5 1.0 2 3 5 7 10 2 3 5 7 Collector-to-Base Voltage, VCB -- V 2 100 ITR03774 No.2093-3/5 2SA1479/2SC3789 Cre -- VCB Reverse Transfer Capacitance, Cre - pF 10 7 5 3 2 1.0 7 5 2 --1.0 3 5 10 7 5 3 2 1.0 7 5 1.0 7 VCE(sat) -- IC 5 3 5 7 2 10 2 --1.0 7 5 3 2 --0.1 7 7 2 100 ITR03776 VCE(sat) -- IC 2SC3789 IC / IB=10 3 2 1.0 7 5 3 2 0.1 7 5 3 5 7 --1.0 5 7 --10 3 2 3 Collector Current, IC - mA 2 5 7 3 5 7 2 --100 Base-to-Emitter Saturation Voltage, VBE (sat) - V 3 2 --1.0 7 5 3 --1.0 2 5 7 --10 3 2 3 Collector Current, IC - mA 5 7 1.0 7 5 3 5 7 1.0 2 3 5 7 Collector Current, IC - mA 5 4 3 2 t sink 80 100 5 7 100 2 ITR03780 ASO 2SA1479 / 2SC3789 ICP=200mA 10 IC=100mA 100 m DC 7 DC 5 op era tio 3 n s op er (T ation c= 25 C ) (T a= 25 2 C) 10 7 3 60 3 5 No hea 40 2 10 Collector Current, IC - mA s 0 50 s 1m 6 7 100 2 ITR03778 2 7 20 5 3 2 0 3 2SC3789 IC / IB=10 3 2SA1479 / 2SC3789 1 2 10 VBE(sat) -- IC ITR03779 PC -- Ta 8 7 5 2 2 --100 5 7 5 7 3 Collector Current, IC - mA 10 2SA1479 IC / IB=10 7 25 2 1.0 ITR03777 VBE(sat) -- IC --10 Collector Dissipation, PC - W 5 5 5 0 3 Collector-to-Base Voltage, VCB -- V 7 3 Base-to-Emitter Saturation Voltage, VBE (sat) - V 2 10 2SA1479 IC / IB=10 7 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 2SC3789 f=1MHz 2 3 5 7 --100 2 --10 Collector-to-Base Voltage, VCB -- V ITR03775 --10 Cre -- VCB 2 2SA1479 f=1MHz Collector-to-Emitter Saturation Voltage, VCE (sat) - V Reverse Transfer Capacitance, Cre - pF 2 120 Ambient Temperature, Ta - C 140 160 ITR03781 2 (For PNP, minus sign is omitted.) 5 7 10 2 3 5 7 100 2 3 5 Collector-to-Emitter Voltage, VCE - V ITR03782 No.2093-4/5 2SA1479/2SC3789 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.2093-5/5