052-6205 Rev D 6-2002
APT20GF120KR
TO-220
G
CE
G
C
E
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
APT20GF120KR
1200V 32A
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• Low Tail Current • Ultra Low Leakage Current
• Avalanche Rated • RBSOA and SCSOA Rated
Fast IGBT
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33)5 56 47 97 61
MIN TYP MAX
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.8
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.8mA)
Gate Threshold Voltage (VCE = VGE, IC = 350µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
EAS
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KΩ)
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1 @ TC = 25°C
RBSOA Clamped Inductive Load Current @ Rg = 11Ω TC = 125°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT20GF120KR
1200
1200
±20
32
20
64
40
22
200
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
052-6205 Rev D 6-2002
APT20GF120KR
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector (" Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.5VCES
IC = IC2
RG = 10Ω
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +25°C
VCE = 20V, IC = IC2
MIN TYP MAX
1050 1210
100 150
63 110
95 140
13 20
62 90
15 30
67 130
92 140
93 190
17 34
30 60
105 160
71 140
1.3 3.0
1.5 3.0
2.7 5.0
17 30
35 70
93 140
70 140
2.4 5.0
12
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
UNIT
°C/W
oz
gm
lb•in
N•m
MIN TYP MAX
0.63
80
0.07
1.9
10
1.1
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
Symbol
RΘJC
RΘJA
WT
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
1Repetitive Rating: Pulse width limited by maximum junction temperature.
2IC = IC2, RGE = 25Ω, L = 110µH, Tj = 25°C
3See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6205 Rev D 6-2002
APT20GF120KR
C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)
TC =+25°C
TJ =+150°C
SINGLE PULSE
250µSec. Pulse Test
VGE = 15V
IC = IC2
TJ = +25°C
f = 1MHz
9V
11V
9V
Cies
Cres
13V
7V
13V
11V
7V
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
0.05
D=0.5
0.2
0.02
0.01
SINGLE PULSE
Coes
VGE=17 & 15V
ZθJC, THERMAL IMPEDANCE (°C/W)
VGE=17 & 15V
TC=-55°C
TC=+25°C
TC=+150°C
0.1
OPERATION
LIMITED
BY
VCE (SAT)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C) Figure 2, Typical Output Characteristics (TJ = 150°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V Figure 4, Maximum Forward Safe Operating Area
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
50
40
30
20
10
0
100
50
10
5
1
20
16
12
8
4
0
50
40
30
20
10
0
60
40
30
20
10
0
2,000
1,000
500
100
50
10
1.0
0.5
0.1
0.05
0.01
0.005
0.001
VCE=240V
VCE=600V
0 4 8 12 16 20 0 4 8 12 16 20
0 2 4 6 8 1 5 10 50 100 1200
0.01 0.1 1.0 10 50 0 40 80 120 160
10-5 10-4 10-3 10-2 10-1 1.0 10
100µs
1ms
10ms
052-6205 Rev D 6-2002
APT20GF120KR
5.0
4.0
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
10
1
0.1
100
10
1
VCC = 0.66 VCES
VGE = +15V
TJ = +25°C
IC = IC2
VCC = 0.66 VCES
VGE = +15V
TJ = +125°C
RG = 10 Ω
VCC = 0.66 VCES
VGE = +15V
RG = 10 Ω
IC1
0.5 IC2
IC2
IC1
Eon
Eoff
Eon
Eoff
0.5 IC2
IC2
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature Figure 9, Maximum Collector Current vs Case Temperature
TJ, JUNCTION TEMPERATURE (°C) RG, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature Figure 11, Typical Switching Energy Losses vs Gate Resistance
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
-50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100
-50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20
0.1 1.0 10 100 1000
40
30
20
10
0
5.0
4.0
3.0
2.0
1.0
0
1.6
1.2
0.8
0.4
0
For Both:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gate drive as specified
Power dissapation = 56W
ILOAD = IRMS of fundamental
IC, COLLECTOR CURRENT (AMPERES) TOTAL SWITCHING ENERGY LOSSES (mJ) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VCE(SAT), COLLECTOR-TO-EMITTER
VOLTAGE (NORMALIZED) SATURATION VOLTAGE (VOLTS)
SWITCHING ENERGY LOSSES (mJ) SWITCHING ENERGY LOSSES (mJ) IC, COLLECTOR CURRENT (AMPERES)
052-6205 Rev D 6-2002
APT20GF120KR
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
ts
= E
on
+ E
off
V
CE
(on)
t
d
(off)
t
d
(on) t
f
t
r
1
Figure 15, Switching Loss Test Circuit and Waveforms
Figure 16, Resistive Switching Time Test Circuit and Waveforms
2
V
CC
R
G
R
L = .5 VCES
I
C2
10%
90%
V
GE
(on)V
CE
(off)
V
GE
(off)
2
1
From
Gate Drive
Circuitry
D.U.T.
B
I
C
I
C
90%
10%
90%
10%
10%
90%
E
off
t
f
t
d
(off)
t
d
(on)
t
r
E
on
I
C
V
CLAMP
100uH
V
CHARGE
A
A
B
D.U.T.
DRIVER*
V
C
A
R
G
V
C
V
C
D.U.T.
V
CE
(SAT)
t=2us
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
Emitter
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
16.51 (.650)
14.23 (.560)
6.35 (.250)
MAX.
Gate
Collector
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Collector
TO-220AC Package Outline
