Data Sheet 1 of 10 Rev. 01.1, 2009-02-20
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA261702E
Confidential, Limited Internal Distribution
Description
The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX
power amplifier applications in the 2500 to 2700 MHz band. Features
include input and output matching, and thermally-enhanced package
with slotted flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFA261702E
Package H-30275-4
Thermally-Enhanced High Power RF LDMOS FETs
170 W, 2500 – 2700 MHz
WiMAX Performance
VDD = 28 V, IDQ = 1800 mA,
(modulation = 64 QAM2/3, channel bandwidth = 3.5
MHz, sample rate = 4 MHz)
0
5
10
15
20
25
30
20 25 30 35 40 45 50
Output Power (dBm)
Efficiency (%)
-45
-40
-35
-30
-25
-20
-15
EVM (dBc)
Efficiency
EVM: ƒ = 2.62 GHz
EVM: ƒ = 2.68 GHz
EVM: ƒ = 2.65 GHz
RF Characteristics
WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1800 mA, POUT = 32 W average
ƒ = 2650 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —15 —dB
Drain Efficiency ηD—20 —%
Error Vector Magnitude EVM —–29 —dB
Features
•Thermally-enhanced packages, Pb-free and
RoHS-compliant
•Broadband internal matching
•Typical WiMAX performance at 2650 MHz, 28 V
- Average output power = 32 W
- Linear gain = 15 dB
- Efficiency = 20%
- Error vector magnitude = –29 dB
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
170 W (CW) output power
*See Infineon distributor for future availability.
Data Sheet 2 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1800 mA, POUT = 170 W PEP, ƒ = 2650 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 14 15 —dB
Drain Efficiency ηD31 33 —%
Intermodulation Distortion IMD —–30 –27 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.08 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 1800 mA VGS —2.5 —V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD643 W
Above 25°C derate by 3.68 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 170 W CW) RθJC 0.272 °C/W
Ordering Information
Type and Version Package Type Package Description Marking
PTFA261702E V1 H-30275-4 Thermally-enhanced slotted flange, push-pull PTFA261702E
*See Infineon distributor for future availability.
Data Sheet 3 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
WiMAX Performance
VDD = 28 V, IDQ = 1800 mA, ƒ = 2650 MHz,
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-45
-40
-35
-30
-25
-20
-15
20 25 30 35 40 45 50
Output Power (dBm)
EVM (dB)
TCASE = 25°C
TCASE = 90°C
WiMAX Performance
VDD = 28 V, ƒ = 2650 MHz
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-50
-45
-40
-35
-30
-25
-20
15 20 25 30 35 40 45 50
Output Power (dBm)
EVM (dB)
IDQ = 2000 mA
IDQ = 1800 mA
IDQ = 1600 mA
Typical Performance (data taken in a production test fixture)
Gain vs. Output Power
VDD = 28 V, ƒ = 2650 MHz
14.0
14.5
15.0
15.5
16.0
16.5
41 43 45 47 49 51 53
Output Power (dBm)
Power Gain (dB)
IDQ
= 1800 mA
IDQ
= 1400 mA
IDQ
= 2200 mA
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 1800 mA
ƒ1 = 2619 MHz, ƒ2 = 2620 MHz;
ƒ1 = 2679 MHz, ƒ2 = 2680 MHz
-70
-60
-50
-40
-30
-20
38 40 42 44 46 48 50
Output Power, Avg. (dBm)
IMD (dBc)
3rd Order
7th
5th
ƒ = 2680 MHz
ƒ = 2620 MHz
Data Sheet 4 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
IS-95 CDMA Performance
VDD = 28 V, IDQ = 1800 mA, ƒ = 2680 MHz,
PAR = 9.8 dB @ 0.01 probability on CCDF
0
5
10
15
20
25
30
35 37 39 41 43 45 47
Output Power (dBm), Avg.
Drain Efficiency (%)
-80
-70
-60
-50
-40
-30
-20
Adj. Ch. Power Ratio
(dBc)
Adj 885 kHz
Efficiency
IS-95 CDMA Performance
VDD = 28 V, IDQ = 1800 mA, ƒ = 2680 MHz,
PAR = 9.8 dB @ 0.01 probability on CCDF
0
6
12
18
24
30
35 37 39 41 43 45 47
Output Power (dBm), Avg.
Drain Efficiency (%)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
Adj. Ch. Power Ratio (dBc)
Efficiency
Alt1 1.25 M`Hz
Adj 885 kHz
TCASE = 25°C
TCASE = 90°C
Typical Performance (cont.)
Output Power vs. Supply Voltage
IDQ = 1800 mA, ƒ = 2680 MHz
51.0
51.5
52.0
52.5
53.0
23 25 27 29 31 33
Supply Voltage (V)
Output Power (dBm)
CW Sweep in a Broadband Test Fixture
VDD = 28 V, IDQ = 1800 mA, POUT = 50 dBm
10
15
20
25
30
35
40
2600 2620 2640 2660 2680 2700
Frequency (MHz)
Efficiency (%)
13
14
15
16
17
18
19
Gain (dB)
Efficiency
Gain
Data Sheet 5 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2600 8.9 –1.2 7.0 –11.9
2620 9.1 –1.2 6.6 –11.5
2640 9.2 –1.1 6.2 –11.2
2660 9.3 –0.9 5.9 –10.9
2680 9.4 –0.8 5.7 –10.5
2700 9.5 –0.6 5.4 –10.2
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.37 A
1.11 A
1.85 A
2.78 A
5.56 A
8.34 A
Typical Performance (cont.)
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 1800 mA, ƒ = 2680 MHz
10
11
12
13
14
15
16
17
18
10 50 90 130 170 210
Output Power (W)
Gain (dB)
10
20
30
40
50
60
Drain Efficiency (%)
Gain
Efficiency
TCASE = 25°C
TCASE = 90°C
Z Source Z Load
G
D
G
S
D
0.1
0.3
0.2
0.4
0
.2
2700 MHz
2700 MHz
2600 MHz
Z Load
Z Source
2600 MHz
Broadband Circuit Impedance
Z0 = 50 Ω
Data Sheet 6 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
R3
2K VR4
2K V
C3
0.001µF
C2
0.001µF
BCP56
R2
1.3KVR1
1.2KV
LM7805
C1
0.001µF
VDD
QQ1
Q1
R5
10V
VDD
l1
l16
l30 l31 l32
R7
1K V
C5
0.1µF
C4
10µF
35V
C10
4.5pF DUT
RF_IN
C15
3.3pF
C17
1µF
C25
0.3pF
C26
4.5pF
VGG
RF_OUT
l43
C27
4.5pF
C9
3.3pF
C11
4.5pF
l8
C14
3.3pF
C18
2.2µF
l25
l38
l33
l44
l15
l7l3l2
l18
l21
l6
l14
l27
l40
C16
2000pF
C13
10µF
C8
10µF
C7
0.1µF
l10
R6
1K V
R8
10 V
R9
10 V
C6
0.1µF
C19
10µF
50V
l22l23
C12
0.1µF
l5l4
l13
l12l11
l19l20 l34 l35
l9
l17
l24
l37
l26
l39
l28
l41
l29
l42
l36
VDD
C20
3.3pF
C22
1µF
C23
2.2µF
C21
2000pF
C24
10µF
50V
l45 l46 l47
Reference circuit block diagram for ƒ = 2680 MHz
Reference Circuit
Data Sheet 7 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
DUT PTFA261702E LDMOS Transistor
PCB 0.76 mm [.030"] thick, er = 3.48 Rogers RO4350 1 oz. copper
Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.)
Microstrip at 2680 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.450 λ, 49.9 Ω30.45 x 1.70 1.199 x 0.067
l20.296 λ, 35.5 Ω19.56 x 2.84 0.770 x 0.112
l30.049 λ, 49.9 Ω3.30 x 1.70 0.130 x 0.067
l4, l12, l28, l29, l41, l42 0.021 λ, 34.0 Ω1.40 x 3.02 0.055 x 0.119
l5, l13 0.010 λ, 40.6 Ω0.69 x 2.34 0.027 x 0.092
l6, l14 0.153 λ, 21.0 Ω9.80 x 5.66 0.386 x 0.223
l7, l15 0.028 λ, 14.6 Ω1.78 x 8.81 0.070 x 0.347
l8, l16 0.067 λ, 8.2 Ω4.11 x 16.94 0.162 x 0.667
l9, l17 0.015 λ, 8.2 Ω0.94 x 16.94 0.037 x 0.667
l10 0.099 λ, 44.6 Ω6.65 x 2.03 0.262 x 0.080
l11 0.463 λ, 49.9 Ω31.32 x 1.70 1.233 x 0.067
l18, l21 0.193 λ, 49.9 Ω13.06 x 1.70 0.514 x 0.067
l19, l22 0.105 λ, 49.9 Ω7.11 x 1.70 0.280 x 0.067
l20, l23, 0.043 λ, 49.9 Ω2.92 x 1.70 0.115 x 0.067
l24, l37 0.020 λ, 5.9 Ω1.24 x 24.16 0.049 x 0.951
l25, l38 0.101 λ, 5.9 Ω6.17 x 24.16 0.243 x 0.951
l26, l39 0.019 λ, 5.9 Ω1.19 x 24.16 0.047 x 0.951
l27, l40 0.132 λ, 50.3 Ω8.97 x 1.68 0.353 x 0.066
l30 0.044 λ, 50.3 Ω2.95 x 1.68 0.116 x 0.066
l31 0.258 λ, 35.5 Ω17.04 x 2.84 0.671 x 0.112
l32 0.229 λ, 49.9 Ω15.52 x 1.70 0.611 x 0.067
l33, l44 0.083 λ, 49.9 Ω5.64 x 1.70 0.222 x 0.067
l34, l45 0.225 λ, 49.9 Ω15.24 x 1.70 0.6 x 0.067
l35, l46 0.060 λ, 49.9 Ω4.06 x 1.70 0.16 x 0.067
l36, l47 0.043 λ, 49.9 Ω2.92 x 1.70 0.115 x 0.067
l43 0.553 λ, 49.9 Ω37.44 x 1.70 1.474 x 0.067
Data Sheet 8 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
a26170e_cd_2-15-08
RF_IN
RO4350_.030 A261702_01
RF_OUT
R4
Q1
QQ1
C3 C1
R2
C2
R1
R5
R3
C12
C13
C14
R9
C11
C10
C4
R7
R6
C5
C9
R8
C8
C7
C15
C6
C18
C19
C15 C17
C16
C25 C26
C27
C20
C24
C21
C22
C23
VDD
VDD
Reference circuit assembly diagram (not to scale)*
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5, C6, C7, C12 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C8, C13 Capacitor, 10 µF Digi-Key 490-1819-2-ND
C9, C14, C15, C20 Ceramic capacitor, 3.3 pF ATC 100B 3R3
C10, C11, C26, C27 Ceramic capacitor, 4.5 pF ATC 100B 4R5
C16, C21 Capacitor, 2000 pF ATC 100B 203JW
C17, C22 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND
C18, C23 Capacitor, 2.2 µF Digi-Key 445-1447-2-ND
C19, C24 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C25 Ceramic capacitor, 0.3 pF ATC 100B 0R3
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor 1.2K ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor 1.3K ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor 2K ohms Digi-Key P2KECT-ND
R4 Potentiometer 2K ohms Digi-Key 3224W-202ETR-ND
R5, R8, R9 Chip resistor 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip resistor 1K ohms Digi-Key P1KECT-ND
*Gerber files for this circuit available on request.
VDD
Data Sheet 9 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-30275-4
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
C
L
S
41.15
[1.620]
1.63
[.064]
2.18
[.086] SPH
31.24±0.28
[1.230±.011]
35.56
[1.400]
D
G
D
16.61±0.51
[.654±.020]
2X R 1.59
[.063]
2X 3.18
[.125]
9.40
[.370 ]
0.038 [.0015] -A-
2X 45°±5° X 1.19
[.047]
4.55±0.38
[.179±.015]
Flange 10.16
[.400]
4X 3.23±0.25
[.127±.010]
G
H-30275-4_po_8-1-2007
[.360 ]
+.004
–.006
LID 9.14 +0.10
–0.15
4X 11.68
[.460]
13.72
[.540]
C
L
C
L
+0.10
–0.15
+.004
–.006
C
L
Data Sheet 10 of 10 Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Revision History: 2009-02-20 Data Sheet
Previous Version: none
Page Subjects (major changes since last revision)
8Fixed typing error
4-10 to 14 Refine existing frames, new frames for final page. Misc updates.
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GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.