* Ny 3a FIN xg THIS ETCH Notice parame so aneation eC . cificatO nang spiguniect nits MITSUBISHI Nch POWER MOSFET FS12UMA-4A HIGH-SPEED SWITCHING USE FS12UMA-4A OUTLINE DRAWING Dimensions in mm 10. 4.5 0.5 2.6 @ GATE DRAIN @10V DRIVE SOURCE @ DRAIN 1D vivnusinniininnntntnninninnsnnninnine 12A 10.290 APPLICATION Cs Switch for CRT Display monitor, Switch mode power supply, etc. MAXIMUM RATINGS (Te = 25C) Parameter VbDss Drain-source Vass Gate-source ID Drain current IDM Drain current IDA Avalanche drain current Pb Maximum Tch Channel Conditions 200 +20 12 36 12 50 55 ~ +150 55 ~ +150 2.0 a Sep.1998 MITSUBISHI ELECTRIC tice Nene P af mente fication and? spect acto a as eunject is note nits MITSUBISHI Neh POWER MOSFET FS12UMA-4A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tech = 25C) Symbol Paramet Test conditi Limits Unit mbo arameter est conditions n y Min. Typ. Max. V (BR) DSs_| Drain-source breakdown voltage | ID = 1mA, VGs = OV 200 _ _ Vv V (BR) GSs_| Gate-source breakdown voltage | IGs = +10uA, VDs = OV +20 Vv Iass Gate-source leakage current | VGS = +20V, VDs = OV _ _ +10 nA IDss Drain-source leakage current | VDS = 200V, Vas = OV 1 mA VGS (th) Gate-source threshold voltage ID = 1mA, VDs = 10V 2.0 3.0 4.0 Vv rDS (ON) | Drain-source on-state resistance | ID = 6A, VGS = 10V _ 0.30 0.40 Q VDs (ON) | Drain-source on-state voltage | ID = 6A, Vas = 10V _ 1.80 2.40 Vv lyts | Forward transfer admittance ID = 6A, VDs = 10V _ 8.0 _ Ss Ciss Input capacitance = 700 = pF Coss Output capacitance VDs = 25V, Vas = OV, f = 1MHz _ 95 _ pF Crss Reverse transfer capacitance _ 30 _ pF td (on) Turn-on delay time _ 15 _ ns tr Rise time - VoD = 100V, ID = 6A, Vas = 10V, RGEN = Ras = 500 20 ns td (off) Turn-off delay time _ 110 _ ns tf Fall time _ 35 _ ns VsD Source-drain voltage Is = GA, Vas = OV 0.95 Vv Rth (ch-c)_ | Thermal resistance Channel to case 2.50 CAWV PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 5 3 = 2 80 Say o D 10" 3 . ! 2 60 z 3 <x 2 3 7) 0 o 40 2 10" : 2! << wi BS 3 = 20 a 2 oO o 40-1 f Te = 25C 7+ Single Pulse % 50 100 150 200 9 3 57101 23 57102 23 57103 2 CASE TEMPERATURE Te (C) DRAIN-SOURCE VOLTAGE VbDs (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 7 To = 25C Vas = 20V . Pulse Test 10V <x 8V <x a 6V _ 4.5V = = Vas = 20V = = 10V a fo BY Pp=50W py oc oc x Te = 25C x oO Pulse Test oO z z a iv a 0 4 8 12 16 20 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VbDs (V) DRAIN-SOURCE VOLTAGE VbDs (V) Sep.1998 9 MITSUBISHI ELECTRIC tice Nene P ie nh at amet? fication and? spect acto a as eunject ents MITSUBISHI Neh POWER MOSFET FS12UMA-4A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) (TYPICAL) Te = 25C 0.6 Te = 25C Pulse Test Pulse Test Lu Wu E > Ea 04 kN Ps Ns 26 zo Zo Ow Oa 03 Wu 2 W = Vas = 10V Cw x O 20V 09 Oo s 0.2 <x Oe Ar za za zO <= om cr 6A 0 0 4 8 12 16 20 10-1 23 5710 23 57101 23 57102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS. DRAIN CURRENT (TYPICAL) (TYPICAL) Vps = 10V 3 Pulse Test = Te = 25C _ 2 = ti @ 75C = a 125C L 2S 101 Zz c im Cw 7 ia Fo 5 Z oz 4 : sE <x is 2 2 x wt Te = 25C 0 10 Vps = 10V 7 Pulse Test 5 0 4 8 12 16 20 100 2 345 7101 2 345 7102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 104 7 td(off) 5 3 c ? wu & 103 ze 7 = to E 5 a 3 O to 2 = 20 = Sg 10 : oO zs 7 : n 5 Tch = 25C 3} Tch = 25C 4/- Vpp = 100V 2} t= 1MHz 3 Vas = 10V 101 Vas =0V 2 RGEN = Ras = 50Q 10 2 345 7101 2 345 7102 100 2 345 7101 2 345 7 102 DRAIN-SOURCE VOLTAGE Vbs (V) DRAIN CURRENT Ip (A) Sep.1998 MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET cao FS12UMA-4A yoo nge- al sper cr vo OF are + ya 16 NON nits wyaice! Warneio So! m HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE VS. GATE CHARGE FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL) 20 20 Tch = 25C ID=12A Vas =0V Pulse Test = a = a = No = No Tc = 125C VDS = 50V 75C. 100V 25C 8 150V GATE-SOURCE VOLTAGE Vas (V) SOURCE CURRENT Is (A) 0 20 40 60 80 100 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE Vsp (V) ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE CHANNEL TEMPERATURE (TYPICAL) (TYPICAL) 5.0 Vas = 10V Vps = 10V ID=1mA 12 ID=6A 5 Tf Pulse Test 40 3 2 3.0 2.0 GATE-SOURCE THRESHOLD VOLTAGE Vas (th) (V) 10-1 -50 0 50 100 150 -50 0 50 100 150 DRAIN-SOURCE ON-STATE RESISTANCE rs (On) (tC) DRAIN-SOURCE ON-STATE RESISTANCE rs (on) (25C) CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Vas =0V ID=1mA tw oP ko ra D= -2 10-42 3 5710-323 5710723 5710-123 5710923 5710123 57102 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) PULSE WIDTH tw (s) DRAIN-SOURCE BREAKDOWN VOLTAGE. V (Br) Dss (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE _ V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE 2th (chc) (C/W) Sep.1998 9 MITSUBISHI ELECTRIC