AP132-317 - Skyworks Solutions, Inc.

Skyworks Solutions, Inc. [978] 241-7000 •Fax [978] 241-7906 •Email sales@skyworksinc.com •www.skyworksinc.com 1

Specifications subject to change without notice. 2/02A

3 V InGaP DCS Power Amplifier

Features

■Single Supply, 3.2 V Nominal

Operating Voltage

■DCS1800 and PCS1900 Operation

■Output Power Greater Than 33 dBm

■High Power Added Efficiency of 50%

■Ultra Small, Thermally Enhanced Micro

Leadframe Package

■Low Current Standby Mode: < 10 µA

■Integral Analog Power Control With

70 dB of Dynamic Range

■GPRS Class 12 Capable

■Designed to Wor k With AP131-317 as

a Dual-/Tri-Band Solution

-317

AP132-317

Description

The AP132-317 is a high performance IC power amplifier

designed for use as the final amplification stage in GSM or

GPRS mobile phones, and other digital wireless

applications in the 1700–2000 MHz band. It features

3-cell battery operation, integrated analog power control

with over 70 dB of dynamic range, and exceptional power

added efficiency over the full battery voltage range. The

amplifier is manufactured on an advanced InGaP HBT

process, known industry-wide for its e xcellent reliability and

performance.The AP132-317 is designed to be stable o ver

a wide temperature range of -40 to +85°C and over a

10:1 output VSWR load. Output matching is provided

externally to maximize perf ormance, reduce costs, and allow

optimal matching for output power and efficiency over a

broader frequency range. A dual- and/or tr i-band solution

can be obtained by combining the AP132-317 with

Alpha’s AP131-317. The AP132-317 is packaged in a

thermally enhanced, ultra small micro leadframe package.

SEATING PLANE

12˚ MAX.

0.058

(1.47mm)

INDICATOR

0.058

(1.47 mm)

0.079

(2.00 mm)

0.025 (0.65 mm)

+ 0.004 (0.10 mm)

0.001 (0.025 mm)

+ 0.001 (0.025 mm)

0.039

(1.00 mm) MAX.

0.148

(3.75 mm)

BSC

0.157

(4.00 mm)

BSC

0.157

(4.00 mm) BSC

0.148

(3.75 mm)

BSC 116 1

20.062

(0.16 mm)

0.079

(2.00 mm)

0.031

(0.80 mm)

BSC

0.024

(0.60 mm)

REF. 0.124

(0.32 mm)

Preliminary

Characteristic Value

Supply Voltage VCC, Standby Mode, 6 V Max.

VAPC < 0.3 (No RF Input Power)

P o wer Control Voltage 4 V Max.

Input Power (CW) 15 dBm Max.

Operating Case Temperature -40 to +85°C

Storage Temperature -45 to +120°C

Absolute Maximum Ratings

Parameter Condition Min. Typ. Max. Unit

Supply Voltage 2.8 3.2 4.2 V

Leakage Current No Input RF Power 10 µA

Power Control Voltage 0.1 2.6 V

Power Control Current VAPC1,2 = 2.6 V, VCC = 3.2 V, CW 5 mA

DC Specifications

3 V InGaP DCS Power Amplifier AP132-317

2Skyworks Solutions, Inc. [978] 241-7000 •Fax [978] 241-7906 •Email sales@skyworksinc.com •www.skyworksinc.com

Specifications subject to change without notice. 2/02A

Parameter Condition Min. Typ. Max. Unit

Frequency DCS 1710 1785 MHz

PCS 1850 1910 MHz

Output Power VAPC1,2 = 2.6 V, VCC = 3.2 V, CW 32.0 33.0 dBm

VAPC1,2 = 2.8 V, VCC = 3.5 V, CW 32.5 33.5 dBm

VAPC1,2 = 2.8 V, VCC = 2.7 V, 30.5 32.0 dBm

T = -20 to +85°C, CW

Dynamic Range VAPC = 0.1 to 2.8 V 60 dB

Power Control Slope VAPC = 0.1 to 2.8 V 75 180 dB/VAPC

Power Added Efficiency POUT = POUT Max. 42 50 %

Input Power 3 6 10 dBm

Input VSWR POUT = 0–32.5 dBm 2:1

Forward Isolation PIN = 6 dBm, VAPC = 0.1 V -40 dBm

PIN = 9 dBm, VAPC = 0.1 V -35 dBm

Second Harmonic At POUT Max., VCC = 3.2 V -50 -45 dBc

Third Harmonic At POUT Max., VCC = 3.2 V -60 -55 dBc

All Others Non-harmonic Spur ious -40 dBm

Noise in the RXBand 1805–1880 MHz, 100 KHz BW -76 dBm

Ruggedness Output VSWR = 10:1 All Phase Angles, No Module Damage

VCC = 4.2 V, PIN = 10 dBm, VAPC = 2.6 V or Per manent

Performance Degradation

Stability Output VSWR = 10:1 All Phase Angles,

VCC = 4.2 V, PIN = 10 dBm, VAPC = 2.6 V -36 dBm

Electrical Specifications at 25°C

Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 Ωsystem, VCC = 3.2 and TA= 25°C.

3 V InGaP DCS Power Amplifier AP132-317

Skyworks Solutions, Inc. [978] 241-7000 •Fax [978] 241-7906 •Email sales@skyworksinc.com •www.skyworksinc.com 3

Specifications subject to change without notice. 2/02A

GND

N/C

2 F0

GND

RF In

RF Out

VCC2

VCC1

VREF

GND

VAPC1

VAPC2

Pin Out Pin Configuration

Pin Symbol Function

1 GND Ground connection.

2 GND Ground connection.

3 RF In RF input to power amplifier. A

33 pF DC blocking capacitor is

required.

4 GND Ground connection.

CC Power supply input voltage.

1 µF and 33 pF RF bypassing

capacitors are required.

APC1 Power control input voltage for the

first two stages of the amplifier.

10 nF, 100 pF, and 10,000 pF RF

bypassing capacitors are required.

Can be connected to Pin 7 for

single power control operation.

APC2 Power control input voltage for

the third stage of the amplifier.

10 nF, 100 pF and 10,000 pF RF

bypassing capacitors are required.

Can be connected to Pin 6 for

single power control operation.

CC Power supply input voltage.

10 nF, 1 µF and 100 pF RF

bypassing capacitors are required.

9 GND Ground connection.

10 RF Out/VCC3 1. RF output:Two shunt matching

capacitors, 4.5 pF high Q and

1.5 pF, and ser ies 33 pF DC

blocking capacitors are required.

2.VCC3: 100 pF, 10 nF, and 1 µF

RF bypassing capacitors are

required.

11 RF Out/VCC3 RF output and power supply input

voltage. See descr iption for Pin 10.

12 RF Out/VCC3 RF output and power supply input

voltage. See descr iption for Pin 10.

13 2 Second har monic ter mination.

This pin can be used to alter the

second harmonic output charac-

teristics, but for nominal GSM

operation, no matching elements

are required.

14 NC No connect.

15 VCC Power supply input voltage.

1 µF, 100 pF, 10 nF, 5.6 pF and

10 pF interstage tuning and RF

bypassing capacitors are required.

16 VCC Power supply input voltage

connected to Pin 15.