SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power-Transistor * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Optimized capacitances * Improved noise immunity * Former development designation: COOLMOS Power Semiconductors D,2 G,1 S,3 SPPx5N60S5/SPBx5N60S5 Type VDS ID SPP02N60S5 600 V 1.8 A RDS(on) 3W SPB02N60S5 Package Marking Ordering Code P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 02N60S5 Q67040-S4212 Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A T C = 25 C 1.8 T C = 100 C 1.1 Pulsed drain current 1) Unit ID puls 3.2 EAS 50 EAR 0.07 IAR 1.8 T C = 25 C Avalanche energy, single pulse mJ I D = 1.44 A, VDD = 50 V Avalanche energy (repetitive, limited by T jmax) I D = 1.8 A , V DD = 50 V Avalanche current (repetitive, limited by T jmax) Reverse diode dv/dt A dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 25 W -55... +150 C kV/s I S = 1.8 A, V DS<V DSS, di/dt = 100 A/s, T jmax = 150 C T C = 25 C Tj , Tstg Operating and storage temperature 1 2000-03-31 SPP02N60S5 SPB02N60S5 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Thermal Characteristics Thermal resistance, junction - case RthJC - - 5 Thermal resistance, junction - ambient RthJA - - 62 @ min. footprint - - 62 @ 6 cm 2 cooling area 2) - 35 - K/W (Leaded and through-hole packages) RthJA SMD version, device on PCB: Static Characteristics, at Tj = 25 C, unless otherwise specified V(BR)DSS 600 - - Gate threshold voltage, VGS = VDS I D = 80 A, Tj = 25 C VGS(th) 3.5 4.5 5.5 Zero gate voltage drain current, V DS=V DSS VGS = 0 V, T j = 25 C I DSS Drain-source breakdown voltage V VGS = 0 V, I D = 0.25 mA - 0.5 1 - - 50 I GSS - - 100 nA RDS(on) - 2.7 3 W VGS = 0 V, T j = 150 C Gate-source leakage current A VGS = 20 V, VDS = 0 V Drain-source on-state resistance VGS = 10 V, I D = 1.1 A 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. 2 2000-03-31 SPP02N60S5 SPB02N60S5 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 1.4 - S pF Dynamic Characteristics Transconductance gfs VDS2*ID*R DS(on)max , ID=1.1A Input capacitance Ciss VGS=0V, VDS=25V, - 240 - Output capacitance Coss f=1MHz - 77 - Reverse transfer capacitance Crss - 4.4 - Turn-on delay time t d(on) - 35 - Rise time tr - 35 - Turn-off delay time t d(off) - 35 52 Fall time tf - 20 30 - 2.3 - - 4.5 - - 7.3 9.5 - - 1.8 - - 3.2 VDD=350V, VGS=10V, ID=1.8A, RG=50W ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Total gate charge Qg VDD=350V, ID=1.8A VDD=350V, ID=1.8A, nC VGS=0 to 10V Reverse Diode Inverse diode continuous IS TC=25C A forward current Inverse diode direct I SM current,pulsed Inverse diode forward voltage VSD VGS=0V, I F=1.8A - 1 1.2 V Reverse recovery time t rr VR=350V, IF=lS, - 860 1460 ns Reverse recovery charge Q rr diF/dt=100A/s - 1.6 - C 3 2000-03-31 SPP02N60S5 SPB02N60S5 Preliminary data Power dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS 10 V SPP02N60S5 SPP02N60S5 1.9 28 W A 24 1.6 22 1.4 18 ID Ptot 20 1.2 16 1.0 14 12 0.8 10 0.6 8 6 0.4 4 0.2 2 0 0 20 40 60 80 100 120 C 0.0 0 160 20 40 60 80 100 C 120 TC TC Safe operating area Transient thermal impedance I D=f (V DS) ZthJC = f (tp ) parameter: D=0.01, TC=25C parameter : D = tp /T 10 1 160 SPP02N60S5 10 1 tp = 11.0s K/W DS ( ID on ) = 10 0 Z thJC V DS /I D A R 100 s 10 0 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 single pulse 1 ms 10 -1 10 -1 10 ms DC 10 -2 0 10 10 1 10 2 V 10 10 -2 -5 10 3 10 -4 10 -3 10 -2 s 10 -1 tp VDS 4 2000-03-31 SPP02N60S5 SPB02N60S5 Preliminary data Typ. output characteristic Drain-source on-resistance I D = f (VDS) RDS(on) = f (Tj ) Parameter: V GS, Tj = 25 C parameter : ID = 1.1 A, VGS = 10 V SPP02N60S5 6 17 W 20V A 14 RDS(on) 12V 4 ID 10V 12 10 3 2 9V 8 8.5V 6 8V 1 typ 2 7V 6V 0 0 98% 4 7.5V 5 10 15 V 0 -60 25 -20 20 60 100 C VDS 180 Tj Typ. transfer characteristics Typ. capacitances ID= f ( V GS ) C = f (VDS) VDS 2 x I D x RDS(on)max parameter: VGS =0 V, f=1 MHz 10 4 6 pF A 10 3 Ciss C ID 4 10 2 3 Coss 2 10 1 1 0 0 Crss 4 8 12 V 10 0 0 20 VGS 5 10 20 30 40 50 60 70 80 V 100 VDS 2000-03-31 SPP02N60S5 SPB02N60S5 Preliminary data Avalanche energy Avalanche SOA EAS = f (Tj) IAR = f (tAR ) par.: ID=1.44A, V DD=50V par.: Tj 150 C 1.8 60 A mJ 40 IAR EAS 1.4 1.2 T j(START) =25C 1.0 T j(START) =125C 30 0.8 0.6 20 0.4 10 0.2 0 20 40 60 80 100 120 C 0.0 -3 10 160 10 -2 10 -1 10 0 10 1 10 2 4 s 10 tAR Tj Drain-source breakdown voltage Gate threshold voltage V(BR)DSS = f (Tj) VGS(th) = f (Tj) parameter: VGS = VDS , ID = 80 A SPP02N60S5 7 720 V 680 VGS(th) V(BR)DSS V 660 5 max. 4 640 typ. 620 3 600 min. 2 580 1 560 540 -60 -20 20 60 100 C 0 -60 180 Tj -20 20 60 100 C 180 Tj 6 2000-03-31 SPP02N60S5 SPB02N60S5 Preliminary data Forward characteristics of reverse diode Typ. gate charge I F = f (VSD) VGS = f (QGate ) parameter: ID = 1.8 A pulsed parameter: Tj , tp = 10 s 10 1 SPP02N60S5 SPP02N60S5 16 V A 12 VGS IF 10 0 0,2 VDS max 0,8 VDS max 10 8 6 10 -1 Tj = 25 C typ 4 Tj = 150 C typ Tj = 25 C (98%) 2 Tj = 150 C (98%) 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 0 0 3.0 VSD 7 1 2 3 4 5 6 7 8 nC Qg 10 2000-03-31 SPP02N60S5 SPB02N60S5 Preliminary data P-TO220-3-1 P-TO220-3-1 dimensions symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 2.54 typ. 4.30 4.50 0.1 typ. 0.1693 0.1772 P T 1.17 2.30 0.0461 0.0906 1.40 2.72 0.0551 0.1071 TO-263 (DPak/P-TO220SMD) dimensions [mm] symbol A max min max 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.65 0.85 0.1 typ. 0.0256 0.0335 5.08 typ. 4.30 4.50 0.2 typ. 0.1693 0.1772 F G H 8 [inch] min K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N P 15 typ. 0.00 0.20 0.5906 typ. 0.0000 0.0079 Q 4.20 0.1654 R S 8 max 2.40 3.00 8 max 0.0945 0.1181 T 0.40 0.0157 5.20 0.60 0.2047 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y Z 9.40 0.3701 16.15 0.6358 2000-03-31 Preliminary data SPP02N60S5 SPB02N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. 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