SiHP12N60E
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S15-0277-Rev. D, 23-Feb-15 1Document Number: 91479
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
E Series Power MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 11.6 mH, Rg = 25 Ω, IAS = 4.5 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
PRODUCT SUMMARY
VDS (V) at TJ max. 650
RDS(on) max. at 25 °C (Ω)V
GS = 10 V 0.38
Qg max. (nC) 58
Qgs (nC) 6
Qgd (nC) 13
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
GD
S
Available
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free SiHP12N60E-E3
Lead (Pb)-free and Halogen-free SiHP12N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID
12
ATC = 100 °C 7.8
Pulsed Drain Current a IDM 27
Linear Derating Factor 1.2 W/°C
Single Pulse Avalanche Energy b EAS 117 mJ
Maximum Power Dissipation PD147 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Drain-Source Voltage Slope TJ = 125 °C dV/dt 70 V/ns
Reverse Diode dV/dt d 5
Soldering Recommendations (Peak Temperature) cfor 10 s 300 °C
SiHP12N60E
www.vishay.com Vishay Siliconix
S15-0277-Rev. D, 23-Feb-15 2Document Number: 91479
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -62
°C/W
Maximum Junction-to-Case (Drain) RthJC - 0.85
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA -0.71-
V/°C
Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VGS = ± 30 V - - ± 1 μA
Zero Gate Voltage Drain Current IDSS
VDS = 600 V, VGS = 0 V - - 1 μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 10
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 6 A - 0.32 0.38 Ω
Forward Transconductance gfs VDS = 40 V, ID = 8 A - 3.8 - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 100 V,
f = 1 MHz
- 937 -
pF
Output Capacitance Coss -53-
Reverse Transfer Capacitance Crss -5-
Effective Output Capacitance, Energy
Related a Co(er)
VDS = 0 V to 480 V, VGS = 0 V
-41-
Effective Output Capacitance, Time
Related b Co(tr) - 136 -
Total Gate Charge Qg
VGS = 10 V ID = 6 A, VDS = 480 V
-2958
nC Gate-Source Charge Qgs -6-
Gate-Drain Charge Qgd -13-
Turn-On Delay Time td(on)
VDD = 480 V, ID = 6 A,
VGS = 10 V, Rg = 9.1 Ω
-1428
ns
Rise Time tr -1938
Turn-Off Delay Time td(off) -3570
Fall Time tf -1938
Gate Input Resistance Rgf = 1 MHz, open drain - 1.1 - Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--12
A
Pulsed Diode Forward Current ISM --48
Diode Forward Voltage VSD TJ = 25 °C, IS = 6 A, VGS = 0 V - - 1.2 V
Reverse Recovery Time trr TJ = 25 °C, IF = IS = 6 A,
dI/dt = 100 A/μs, VR = 25 V
- 350 - ns
Reverse Recovery Charge Qrr -4-μC
Reverse Recovery Current IRRM -19-A
S
D
G
SiHP12N60E
www.vishay.com Vishay Siliconix
S15-0277-Rev. D, 23-Feb-15 3Document Number: 91479
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Coss and Eoss vs. VDS
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
0 5 10 15 20 25 30
0
5
10
15
20
25
30
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
TJ = 25 °C
6 V
8 V
5 V
7 V
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
010205152530
5 V
6 V
7 V
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
TJ = 150 °C
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
010 2551520
5
10
15
20
25
30
0
TJ = 25 °C
TJ = 150 °C
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-to-Source
2.5
0.5
- 60
3
2
1.5
1
0
- 40 - 20 020 40 60 80 100 120 140 160
On Resistance (Normalized)
VGS = 10 V
ID = 6 A
VDS, Drain-to-Source Voltage (V)
Capacitance (pF)
100
10
0 200 400
10 000
1
1000
100 300 500 600
Ciss
Coss
Crss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
0
1
2
3
4
5
6
7
8
20
200
2000
0 100 200 300 400 500 600
Eoss (μJ)
Coss (pF)
VDS
Coss Eoss
SiHP12N60E
www.vishay.com Vishay Siliconix
S15-0277-Rev. D, 23-Feb-15 4Document Number: 91479
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Q
g
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
16
4
0
24
20
12
8
0 10 20 30 40 50 60
VDS = 480 V
VDS = 300 V
VDS = 120 V
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
1101001000
* VGS > minimum VGS at which RDS(on) is specied
0.01
0.1
1
10
100
1000
1 ms
10 ms
100 μs
Limited by RDS(on)*
IDM = Limited
Operation in this Area
Limited by RDS(on)
BVDSS Limited
TC = 25 °C
TJ = 150 °C
Single Pulse
TJ, Case Temperature (°C)
ID, Drain Current (A)
25 50 75 100 125 150
3
6
9
12
15
0
TJ, Junction Temperature (°C)
VDS, Drain-to-Source
- 60 0 160
Breakdown Voltage (V)
- 40 - 20 20 40 60 80 100 120 140
525
550
575
600
625
650
675
700
725
750
SiHP12N60E
www.vishay.com Vishay Siliconix
S15-0277-Rev. D, 23-Feb-15 5Document Number: 91479
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
Fig. 13 - Switching Time Test Circuit
Fig. 14 - Switching Time Waveforms
Fig. 15 - Unclamped Inductive Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
Fig. 17 - Basic Gate Charge Waveform
Fig. 18 - Gate Charge Test Circuit
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Pulse Time (s)
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-V
DD
10 V
Vary t
p
to obtain
required I
AS
IAS
VDS
VDD
VDS
tp
QGS QGD
QG
V
G
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
SiHP12N60E
www.vishay.com Vishay Siliconix
S15-0277-Rev. D, 23-Feb-15 6Document Number: 91479
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91479.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
Package Information
www.vishay.com Vishay Siliconix
Revison: 14-Dec-15 1Document Number: 66542
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220-1
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
DIM. MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q2.54 3.00 0.100 0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Package Picture
ASE Xi’an
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Revision: 08-Feb-17 1Document Number: 91000
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