SUPERTEX INC Tees OL DE a?74295 0001739 P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BV peg / Posion) layon) Order Number / Package BV eas (max) (min) 10-3 TO-39 TO-220 DICE -40V 0.8Q -6A VP1204N1 VP1204N2 VP1204N5 VP1204ND -60V 0.8Q -6A VP1206N1 VP1206N2 VP1206N5 VP1206ND -100V 0.82 -6A VP1210N1 VP1210N2 VP1210N5 VP1210ND Features Advanced DMOS Technology O Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- . . ize a vertical DMOS structure and Supertex's well-proven silicon- O Low power drive requirement gate manufacturing process. This combination produces devices D Ease of paralleling with the power handling capabllities of bipolar transistors and with oo, the high input impedance and negative temperature coefficient CO Low C,,,and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, Pa these devices are free from thermal runaway, and thermally- O Excellent therma! stability induced secondary breakdown. O Integral Source-Drain diode Supertex Vertical DMOS Power FETs are ideally suited to a wide 1 High input impedance and high gain range of switching and amplifying applications where high break- . down voltage, high input impedance, low input capacitance, and (2 Complementary N- and P-Channel devices fast switching speeds are desired. Applications Package Options (Notes 1 and 2) O Motor control 1 Convertors O Amplifiers O Switches O Power supply circuits (Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) TO-39 OR ~T) Absolute Maximum Ratings 5 i TO-220 Drain-to-Source Voltage BV oss 70.3 Drain-to-Gate Voltage . BVoas Gate-to-Source Voltage +20V Operating and Storage Temperature 55C to +150C Note 1: Sae Package Outline section for discrete pinouts. Soldering Temperature* 300C Note 2: See Array section for quad pinouts. *Distance of 1.6 mm from case for 10 seconds. 9-57 SUPERTEX INC Ol pe Bazzaens OOO1i740 2 I soar VP12A d Thermal Characteristics T7-39-79 Package 1, (continuous)* 1, (pulsed)* Power Dissipation Ge %e loa Jorw . @T,= 26C C/W cw TO-3 -7.0A -14A 100W 30 1.25 -7A 146A TO-39 -2.5A -11A 6.5W 125 20 -2.5A -11A TO-220 -5.0A -14A 45W 70 2.75 -5A -14A * |p (continuous) is limited by max rated T,. ; Electrical Characteristics (@ 25C unless otherwise specified) (Notes 4 and 2) Symbo! Parameter Min Typ Max Unit Conditions BV Dral s VP1210 -100 pss rain-to-Source 7 _. _ Breakdown Voltage P1206 60 V Ip= -10MA, Ves = 0 VP1204 -40 Veseny Gate Threshold Voltage 15 3.5 v Vag = Vogt tp = -10mA AV esany Change in Voacq, With Temperature 4.7 | -55 | mv I, = -10MA, Ves = Vog less Gate Body Leakage -1.0 | -100 nA Vag = t20V, Vps = 0 loss Zero Gate Voltage Drain Current -100 pA Ves = 0: Vos = Max Rating -10 mA Veg = 0: Vg = 9.8 Max Rating T, = 125C Ibrox) ON-State Drain Current 15 2.0 A Vas = -BV, Vos = -25V -6.0 | -12.0 Vog = -10V, Vg = -25V Posion) Static Drain-to-Source 1.0 1.4 Q Vag = -5V: Ip =-1A ON-State Resistance 0.5 0.8 Ves 271 OV, Ip = 3A ARpsiow) Change in Rogory with Temperature 1.0 156 AIC I = -10A, Veg = -10V Ges Forward Transconductance 1 2 5 Vos = -25V, Ip = -3A Cisg input Capacitance 550 650 Vee* 0; Vpg = -25V Coss Common Source Output Capacitance 250 275 pF f=1MHz Cass Reverse Transfer Capacitance 26 40 . t Turn-ON Delay Time 10 30 'd(ON) " y Vop = -25V t, Rise Time 17 40 t Turn-OFF Delay Time 70 | 108 | p= 4A d(OFF) R, = 502 t, Fall Time 35 60 Veep Diode Forward Voltage Drop 1.2 -1.6 Vv Ign = BA, Veg = 9 ty Reverse Recovery Time 500 ns Ign = 1A, Vag = 0 Note 1; All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300ps pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circult fo 90% input 10% \ SCOPE {(ON) t(OFF) DUT. ta(ON) , tr td(QFF), 4 Output nnn] 10% \ Ki0% ; 90%! 90% 5 9-68 Es ~ rer ERE LUE a ae SUPERTEX INC Typical Performance Curves Ip (AMPERES) GFs (SIEMENS) 1p (AMPERES) Output Characteristics GQ ww tc Ww a = < 4 0 10 20 ~-30 40 ~50 Vos (VOLTS) Transconductance Vs. Drain Current 4.0 Vps = 3.2 24 G E 2 16 Q a 0.8 0 0 ~2 4 6 -8 10 Ip (AMPERES) Maximum Rated Safe Operating Area 100 a uw N a < 3 z 10 3 TO-220( o 2 < Ee 4% wo 1.0 w a < = ul & BY BVDSS r -0.1 r -0.1 1.0 -10 100 Vps (VOLTS) Pulse Condition: 300 ns, 2% dutycycle. 9-59 100 80 60 40 20 0.8 0.6 0.4 0.2 9 on vdeffarzaeqs ooo1743 4 T VP12A T-3P 79 Saturation Characteristics Ves =-10V -4 -6 -8 -10 Vps (VOLTS} Qo -2 Power Dissipation Vs. Case Temperature TO-3 eg 0 25 50 75 100 9-126 150 To CC) Thermal Response Characteristics 70-220, To =28C PD = 37.6W TO-3 Te = 25C Pp = 100W TA=25C PD = 6.25W 0.1 tp (SECONDS) 0,001 0.01 1.0 10 ~ SUPERTEX INC Ip (AMPERES) BVDss (NORMALIZED) c (PICOFARADS) BVDSS Variation with Temperature 50 Q 50 Ty Pe) 160 Transfer Characteristics VDS = ~25V 0 -2 ~4 -6 Vas (VOLTS) Capacitance Vs. Drain-to-Source Voltage 1000 750 500 XQ Ccisss 260 PL P"Coss4 0 0 -10 -20 -30 -40 Vos (VOLTS) 9-60 VGS(th) (NORMALIZED) RDS(ON) (OHMS) VGs {VOLTS} -8 -6 -4 2 OL ve arzae9s ooo1zue & [ VP12A 7-39-03 ON- Resistance Vs. Drain Current 0 -3 -6 -9 ips (AMPERES) 12 16 V(th) and RDS Variation with Temperature RDs(ON) (NORMALIZED) 50 oO 50 100 160 Ty Po) Gate Drive Dynamic Characteristics Vbs =-1 1060pF 0 2 4 -6 -8 QG (NANOCOULOMBS) 10