NVHL027N65S3F MOSFET - Power, N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET's optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 27.4 mW @ 10 V 75 A D G Features * * * * * * 700 V @ TJ = 150C Typ. RDS(on) = 21.5 mW Ultra Low Gate Charge (Typ. Qg = 227 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1880 pF) 100% Avalanche Tested AEC-Q101 Qualified and PPAP Capable Applications S POWER MOSFET G D S TO-247 LONG LEADS CASE 340CX * Automotive On Board Charger HEV-EV * Automotive DC/DC Converter for HEV-EV MARKING DIAGRAM $Y&Z&3&K NVHL 027N65S3F $Y &Z &3 &K NVHL027N65S3F = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2018 July, 2019 - Rev. 2 1 Publication Order Number: NVHL027N65S3F/D NVHL027N65S3F ABSOLUTE MAXIMUM RATINGS (TC = 25C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAS Avalanche Current (Note 2) EAR dv/dt PD TJ, TSTG TL NVHL027N65S3F Unit 650 V - DC 30 V - AC (f > 1 Hz) 30 - Continuous (TC = 25C) 75 - Continuous (TC = 100C) 60 - Pulsed (Note 1) A 187.5 A 1610 mJ 15 A Repetitive Avalanche Energy (Note 1) 5.95 mJ MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation (TC = 25C) 595 W - Derate Above 25C 4.76 W/C -55 to +150 C 300 C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 15 A, RG = 25 W, starting TJ = 25C. 3. ISD 37.5 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. NVHL027N65S3F Unit 0.21 _C/W 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVHL027N65S3F NVHL027N65S3F TO-247 Tube N/A N/A 30 Units www.onsemi.com 2 NVHL027N65S3F ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 - - V VGS = 0 V, ID = 10 mA, TJ = 150_C 700 - - V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 20 mA, Referenced to 25_C - 0.61 - V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V - - 10 mA VDS = 520 V, TC = 125_C - 590 - IGSS Gate to Body Leakage Current VGS = 30 V, VDS = 0 V - - 100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3 mA 3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 35 A - 21.5 27.4 mW Forward Transconductance VDS = 20 V, ID = 37.5 A - 57 - S VDS = 400 V, VGS = 0 V, f = 1 MHz - 7780 - pF - 200 - pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 1880 - pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 347 - pF Total Gate Charge at 10 V VDS = 400 V, ID = 37.5 A, VGS = 10 V (Note 4) - 227 - nC - 67 - nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance - 87 - nC f = 1 MHz - 2.2 - W VDD = 400 V, ID = 37.5 A, VGS = 10 V Rg = 2 W (Note 4) - 46 - ns - 59 - ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time - 147 - ns Turn-Off Fall Time - 42 - ns Maximum Continuous Source to Drain Diode Forward Current - - 75 A ISM Maximum Pulsed Source to Drain Diode Forward Current - - 187.5 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 37.5 A - - 1.3 V trr Reverse Recovery Time - 179 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 37.5 A, dIF/dt = 100 A/ms - 1098 - nC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NVHL027N65S3F TYPICAL PERFORMANCE CHARACTERISTICS ID, Drain Current (A) 100 200 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 1 VGS=10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 100 ID, Drain Current (A) 200 10 250 ms Pulse Test TC = 150 o C 250 ms Pulse Test TC = 255C 0.2 1 10 1 20 0.1 VDS, Drain-Source Voltage (V) 10 20 Figure 2. On-Region Characteristics Figure 1. On-Region Characteristics 0.04 300 1 VDS, Drain-Source Voltage (V) TC = 25o C VDS = 20V 250 ms Pulse Test RDS(ON), Drain-Source On-Resistance (W) ID, Drain Current (A) 100 o 150 C 10 o 25 C 0.03 VGS= 10V 0.02 VGS= 20V o -55 C 0.01 1 2 3 4 5 6 7 VGS, Gate-Source Voltage (V) 0 8 100000 150oC 25oC 1 o -55 C Ciss 10000 Capacitances (pF) IS, Reverse Drain Current (A) 250 ms Pulse Test 1000 Coss 100 VGS = 0V f = 1MHz 10 0.1 0.0 0.5 1.0 1.5 2.0 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.01 0.001 200 1000000 100 0.1 150 Figure 4. On-Resistance Variation vs. Drain Current and Gate Voltage VGS= 0 V 10 100 ID, Drain Current (A) Figure 3. Transfer Characteristics 1000 50 10-1 VSD, Body Diode Forward Voltage (V) 100 101 102 VDS, Drain-Source Voltage (V) Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Capacitance Characteristics www.onsemi.com 4 103 NVHL027N65S3F TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1.2 ID = 37.5 A BDSS, Drain-Source Breakdown Voltage (Normalized) VGS, Gate-Source Voltage (V) 10 VDS= 130 V 8 VDS = 400 V 6 4 2 0 0 60 120 180 240 Qg, Total Gate Charge (nC) 300 1.1 1.0 0.9 0.8 30ms 2.0 1.5 1.0 100 100ms 1ms 10ms 10 DC Operation in This Area is Limited by RDS(on) 1 o TC = 25 C TJ = 150oC Single Pulse 0.5 0.0 -50 0.1 0 50 100 150 TJ, Junction Temperature (5C) 1 10 100 VDS, Drain-Source Voltage (V) 1000 Figure 10. Maximum Safe Operating Area Figure 9. On-Resistance Variation vs. Temperature 80 60 60 45 EOSS (mJ) ID, Drain Current (A) 0 50 100 150 TJ, Junction Temperature (5C) 500 VGS= 10 V ID = 35 A ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 2.5 -50 Figure 8. Breakdown Voltage Variation vs. Temperature Figure 7. Gate Charge Characteristics 3.0 VGS = 0 V ID = 20 mA 40 20 30 15 0 0 25 50 75 100 125 0 150 TC, Case Temperature (5C) 130 260 390 520 650 VDS, Drain to Source Voltage (V) Figure 12. EOSS vs. Drain to Source Voltage Figure 11. Maximum Drain Current vs. Case Temperature www.onsemi.com 5 NVHL027N65S3F TYPICAL PERFORMANCE CHARACTERISTICS (continued) Power Dissipation Multiplier 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 o TC, Case Temperature ( C) Figure 13. Normalized Power Dissipation vs. Case Temperature 5000 T C = 25 o C VGS = 10V FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: IDM, Peak Current (A) 1000 I = I 25 150 - T C 125 100 10 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 t, Rectangular Pulse Duration (s) Figure 14. Peak Current Capability 300 If R = 0 tAV = (L)(I AS )/(1.3*RATED BV DSS - VDD ) / 0 If R = tAV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - VDD) +1] IAS , Avalanche Current (A) 100 Starting TJ = 25oC 10 Starting TJ = 125oC 1 0.001 0.01 0.1 1 10 100 tAV, Time In Avalanche (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 15. Unclamped Inductive Switching Capability + www.onsemi.com 6 100 101 NVHL027N65S3F TYPICAL PERFORMANCE CHARACTERISTICS (continued) 120 VGS= VDS ID= 3 mA Normalized Gate Threshold Voltage 100 RDS(on), Drain-Source On-Resistance ( m W ) 1.2 Pulse Duration = 250 ms Duty Cycle = 0.5% Max ID= 35 A 80 60 TJ = 150 oC 40 20 0.8 0.6 TJ = 25 oC 0 6 7 8 9 VGS, Gate-Source Voltage (V) 0.4 10 2 1 0.1 -50 0 50 100 o TJ , Junction Temperature ( C) DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 0.001 10-5 150 Figure 17. Normalized Gate Threshold Voltage vs. Temperature Figure 16. RDSON vs. Gate Voltage r(t), Normalized Effective Transient Thermal Resistance 1.0 ZqJC(t) = r(t) x RqJC RqJC = 0.21C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 10-4 t2 10-3 10-2 10-1 100 t, Rectangular Pulse Duration (sec) Figure 18. Transient Thermal Response Curve www.onsemi.com 7 101 102 NVHL027N65S3F VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 19. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 20. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 21. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 8 Time NVHL027N65S3F + DUT VDS - ISD L Driver RG Same Type as DUT VGS - dv/dt controlled by RG - ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 22. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 9 NVHL027N65S3F TO-247-3LD CASE 340CX ISSUE O www.onsemi.com 10 NVHL027N65S3F SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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