© Semiconductor Components Industries, LLC, 2018
July, 2019 − Rev. 2
1Publication Order Number:
NVHL027N65S3F/D
NVHL027N65S3F
MOSFET – Power,
N-Channel, SUPERFET) III,
FRFET)
650 V, 75 A, 27.4 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
Features
•700 V @ TJ = 150°C
•Typ. RDS(on) = 21.5 mW
•Ultra Low Gate Charge (Typ. Qg = 227 nC)
•Low Effective Output Capacitance (Typ. Coss(eff.) = 1880 pF)
•100% Avalanche Tested
•AEC−Q101 Qualified and PPAP Capable
Applications
•Automotive On Board Charger HEV−EV
•Automotive DC/DC Converter for HEV−EV TO−247 LONG LEADS
CASE 340CX
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
NVHL027N65S3F = Specific Device Code
MARKING DIAGRAM
VDSS RDS(ON) MAX ID MAX
650 V 27.4 mW @ 10 V 75 A
POWER MOSFET
D
S
G
$Y&Z&3&K
NVHL
027N65S3F
G
S
D
NVHL027N65S3F
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol Parameter NVHL027N65S3F Unit
VDSS Drain to Source Voltage 650 V
VGSS Gate to Source Voltage − DC ±30 V
− AC (f > 1 Hz) ±30
IDDrain Current − Continuous (TC = 25°C) 75 A
− Continuous (TC = 100°C) 60
IDM Drain Current − Pulsed (Note 1) 187.5 A
EAS Single Pulsed Avalanche Energy (Note 2) 1610 mJ
IAS Avalanche Current (Note 2) 15 A
EAR Repetitive Avalanche Energy (Note 1) 5.95 mJ
dv/dt MOSFET dv/dt 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 50
PDPower Dissipation (TC = 25°C) 595 W
− Derate Above 25°C 4.76 W/°C
TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C
TLMaximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 37.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol Parameter NVHL027N65S3F Unit
RqJC Thermal Resistance, Junction to Case, Max. 0.21 _C/W
RqJA Thermal Resistance, Junction to Ambient, Max. 40
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity
NVHL027N65S3F NVHL027N65S3F TO−247 Tube N/A N/A 30 Units
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage VGS =0V, I
D= 1 mA, TJ=25_C650 − − V
VGS =0V, I
D= 10 mA, TJ= 150_C700 − − V
DBVDSS / DTJBreakdown Voltage Temperature
Coefficient
ID= 20 mA, Referenced to 25_C−0.61 −V/_C
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V − − 10 mA
VDS = 520 V, TC= 125_C−590 −
IGSS Gate to Body Leakage Current VGS =±30 V, VDS =0V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VGS =V
DS, ID=3mA 3.0 −5.0 V
RDS(on) Static Drain to Source On Resistance VGS =10V, I
D=35A −21.5 27.4 mW
gFS Forward Transconductance VDS =20V, I
D= 37.5 A −57 −S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz −7780 −pF
Coss Output Capacitance −200 −pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS =0V −1880 −pF
Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS =0V −347 −pF
Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID= 37.5 A, VGS =10V
(Note 4)
−227 −nC
Qgs Gate to Source Gate Charge −67 −nC
Qgd Gate to Drain “Miller” Charge −87 −nC
ESR Equivalent Series Resistance f = 1 MHz −2.2 −W
SWITCHING CHARACTERISTICS
td(on) Turn-On Delay Time VDD = 400 V, ID= 37.5 A, VGS =10V
Rg=2W
(Note 4)
−46 −ns
trTurn-On Rise Time −59 −ns
td(off) Turn-Off Delay Time −147 −ns
tfTurn-Off Fall Time −42 −ns
SOURCE-DRAIN DIODE CHARACTERISTICS
ISMaximum Continuous Source to Drain Diode Forward Current − − 75 A
ISM Maximum Pulsed Source to Drain Diode Forward Current − − 187.5 A
VSD Source to Drain Diode Forward Voltage VGS = 0V, I
SD = 37.5 A − − 1.3 V
trr Reverse Recovery Time VGS = 0V, I
SD = 37.5 A,
dIF/dt = 100 A/ms
−179 −ns
Qrr Reverse Recovery Charge −1098 −nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. On−Region Characteristics
Figure 3. Transfer Characteristics Figure 4. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 5. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 6. Capacitance Characteristics
VDS, Drain−Source Voltage (V)
ID, Drain Current (A)
250 ms Pulse Test
TC = 255C
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
250 ms Pulse Test
T
C= 150 oC
V
GS=10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
2345678
1
10
300
100
−55o
C
150oC
VDS = 20V
250 ms Pulse Test
25o
ID, Drain Current (A)
C
VGS, Gate−Source Voltage (V)
T
C= 25oC
V
GS= 20V
V
GS= 10V
V
GS= 0 V
250 ms Pulse Test
150
o
IS, Reverse Drain Current (A)
C
25
oC
−55 oC
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS = 0V
f = 1MHz
C
Capacitances (pF)
rss
VDS, Drain−Source Voltage (V)
ID, Drain Current (A)
0.2 1 10 20
1
10
100
200
0.1 1 10 20
1
10
100
200
RDS(ON), Drain−Source
On−Resistance (W)
ID, Drain Current (A)
0.01
0.02
0.03
0.04
0 50 100 150 200
0.1
1
10
100
1000
10000
100000
1000000
VDS, Drain−Source Voltage (V)
10−1
VSD, Body Diode Forward Voltage (V)
10−1100101102103
23456
0.0 0.5 1.0 1.5 2.0
0.001
0.01
0.1
1
10
100
1000
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Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs.
Temperature
Figure 9. On−Resistance Variation vs. Temperature Figure 10. Maximum Safe Operating Area
Figure 11. Maximum Drain Current vs. Case
Temperature
V
DS = 400 V
VDS= 130 V
ID= 37.5 A VGS= 0 V
ID= 20 mA
V
GS= 10 V
ID= 35 A 30ms
100ms
1ms
10ms
Operation in This Area
is Limited by RDS(on)
T
C= 25
o
C
T
J= 150o
C
Single Pulse
DC
Figure 12. EOSS vs. Drain to Source Voltage
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Qg, Total Gate Charge (nC)
TJ, Junction Temperature (5C)
0 60 120 180 240 300
0
2
4
6
8
10
VGS, Gate−Source Voltage (V)
BDSS, Drain−Source Breakdown
Voltage (Normalized)
0.8
0.9
1.0
1.1
1.2
−50 0 50 100 150
RDS(on), Drain−Source
On−Resistance (Normalized)
ID, Drain Current (A)
TJ, Junction Temperature (5C)
−50 0 50 100 150
VDS, Drain−Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.1
1
10
100
500
1 10 100 1000
0
15
30
45
60
0 130 260 390 520 650
VDS, Drain to Source Voltage (V)
TC, Case Temperature (5C)
EOSS (mJ)
ID, Drain Current (A)
80
60
40
20
0
25 50 75 100 125 150
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0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
Power Dissipation Multiplier
1.2
TC, Case Temperature ( o
C)
10
−510
−410
−310
−210
−110
010
1
10
100
1000
5000
VGS = 10V
IDM
,Peak Current (A)
SINGLE PULSE
t, Rectangular Pulse Duration (s)
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 13. Normalized Power Dissipation vs. Case
Temperature
Figure 14. Peak Current Capability
0.001 0.01 0.1 1 10 100
1
10
100
300
Starting TJ= 125oC
Starting T
J= 25
oC
IAS, Avalanche Current (A)
tAV, Time In Avalanche (ms)
Figure 15. Unclamped Inductive Switching Capability
TC = 25 oC
I = I 25 150 − T C
125
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
tAV = (L)(I AS)/(1.3*RATED BV DSS − VDD)
If R = 0
If R 0
tAV = (L/R)ln[(I AS*R)/(1.3*RATED BV DSS − V
DD) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
=/
+
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Figure 16. RDSON vs. Gate Voltage
678910
0
20
40
60
80
100
120
TJ= 150oC
ID= 35 A
Pulse Duration = 250 ms
RDS(on)
, Drain−Source
On−Resistance (m)
Duty Cycle = 0.5% Max
VGS
, Gate−Source Voltage (V)
TJ= 25oC
Figure 17. Normalized Gate Threshold Voltage
vs. Temperature
−50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
VGS= VDS
ID
Normalized Gate
Threshold Voltage
= 3 mA
TJ, Junction Temperature (oC)
Figure 18. Transient Thermal Response Curve
10
−510
−410
−310
−210
−11001012
10
0.001
0.01
0.1
1
2
SINGLE PULSE
r(t), Normalized Effective Transient
Thermal Resistance
DUTY CYCLE−DESCENDING ORDER
t, Rectangular Pulse Duration (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
W
PDM
t1
t2
ZqJC(t) = r(t) x RqJC
RqJC = 0.21°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
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Figure 19. Gate Charge Test Circuit & Waveform
Figure 20. Resistive Switching Test Circuit & Waveforms
Figure 21. Unclamped Inductive Switching Test Circuit & Waveforms
RL
VDS
VGS
VGS
RG
DUT
VDD
VDS
VGS
10%
90%
10%
90% 90%
ton toff
trtf
td(on) td(off)
Qg
Qgd
Qgs
VGS
Charge
VDS
VGS
RL
DUT
IG = Const.
VDD
VDS
RG
DUT
VGS
L
ID
tp
VDD
tp
Time
IAS
BVDSS
ID(t)
VDS(t)
EAS +1
2
@LIAS
2
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Figure 22. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
L
VDD
RG
ISD
VDS
+
−
VGS
Same Type
as DUT
− dv/dt controlled by RG
− ISD controlled by pulse period
Driver
VGS
(Driver)
ISD
(DUT)
VDS
(DUT) VSD
IRM
10 V
di/dt
VDD
IFM, Body Diode Forward Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode
Forward Voltage Drop
D+
Gate Pulse Width
Gate Pulse Period
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