Rugged Power MOSFETs IRF9540, IRF9541 IRF9542, IRF9543 Avalanche-Energy-Rated P-Channel Power MOSFETs -15 A and -19 A, -60 V and -100 V Toston) = 0.20 Q and 0.30 0 Features: a Single pulse avalanche energy rated a SOA is power-dissipation limited a Nanosecond switching speeds a Linear transter characteristics a High input impedance The IRF9540, IRF9541, IRF9542 and I(RF9543 are advanced power MOSFETs designed, tested, and guaranteed to with- stand a specified level of energy in the breakdown ava- lanche mode of operation. These are p-channel enhance- ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators, switch- ing converters, motor drivers, relay drivers, and drivers for high-power bipotar switching transistors requiring high speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. ABSOLUTE-MAXIMUM RATINGS File Number 2282 TERMINAL DIAGRAM Oo G s 92CS-43262 P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION SOURCE je DRAIN ~ as (FLANGE) C) DRAIN f care 92Cs-39828 TOF VIEW JEDEC TO-220AB CHARACTERISTIC tRF9540 IRF9541 IRF9542 IRF9S43 UNITS Drain-Source Voltage Vos -100 -60 -100 60 Vv Drain-Gate Voltage (Res = 20 kQ) Voca -100 -60 -100 ~60 v Continuous Drain Current lo @ Te = 25C 19 -19 715 715 A Continuous Drain Current lo @ Tc = 100C -12 -12 ~10 -10 A Pulsed Drain Current @ lom -76 -76 -60 ~60 A Gate-Source Voltage Ves +20 Vv Maximum Power Dissipation Po @ Tc = 25C 125 (See Fig. 14) Ww Linear Derating Factor 1 (See Fig. 14) wc Single-Pulse Avalanche Energy Rating @ Eas 960 mJ Operating Junction and Ts - Storage Temperature Range Tatg 85 to +150 c Lead Temperature 300 (0.063 in. (1.6 mm] from case for 10 s) c 6-376Rugged Power MOSFETs IRF9540, IRF9541 IRF9542, IRF9543 ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified CHARACTERISTIC TYPE MIN. | TYP. | MAX. [UNITS TEST CONDITIONS Drain-Source Breakdown Voltage BVoss IRF9540 | _ _ = IRF9542 100 Vv Ves = OV IRF9541 7 _ _ =o IRF9843 60 Vv In = -250 pA Gate Threshold Voltage Vesam ALL. ~2.0 - -40 Vv Vos = Vas, lo = -250 uA Gate-Source Leakage Forward less ALL _ _ -500 nA Ves = -20V Gate-Source Leakage Reverse less ALI. al = 500 nA Ves = 20V Zero-Gate Voltage Drain Current loss ALI = _ ~250 HA Vos = Max. Rating, Vcs = 0 V - -1000 | wA Vos = Max. Rating x 0.8, Vas = 0 V, Tc = 125C On-State Drain Current @ Iptom (RF9540 iRFosa1 | 719 | = A - Vos > Iptom X foston max, Ves = ~-10V IRF9542 A ; IRFOS43 | 715 | = Static Drain-Source On-State Toston IRF9540 Resistance @ "| iprosay | | O15 | 020 | 9 7 _ (RF9542 Ves = -10V, lp =-10A ipres43 | | 022 | 030) 9 Forward Transconductance @ Qrs ALL 5 7 = S(O) | Vos > foion x Fosion max, lp = -6 A Input Capacitance Ciss ALL _ 1100 = pF - a - Output Capacitance Cons ALL | 550 | pF ae re v. : os = -25 V, f= 1.0 MHz Reverse Transfer Capacitance Crs ALL 250 _ pF 9. Turn-On Delay Time taiont ALL = 16 20 ns Vop = 0.5 BVoss, lp = -18 A, Zo = 9.12 Rise Time t ALL _ 65 100 ns See Fig. 17 Turn-Off Delay Time tatorn ALL 47 70 ns (MOSFET switching times are essentially Fall Time t ALL 28 70 ns independent of operating temperature.) Total Gate Charge Q, ALL _ 70 nc | Ves =-15 V, lo = -24 A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Gate-Source Charge Qe. ALL 14 21 nc essentially independent of operating Gate-Drain ("Miller") Charge Qe ALL 56 84 nc__| temperature.) internal Drain inductance Lo _ 3.5 _ nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL 45 = nH | Measured from the inductances. drain lead, 6mm (0.25 O in.) from package to center of die. Internal Source Inductance Ls ALL _ 75 _ nH Measured trom the source lead, 6 mm sO- (0.25 in.) from package to source 6 bonding pad. s Junction-to-Case Rac ALL _ 1 C/W Case-to-Sink Recs ALL = 1.0 = C/W | Mounting surface flat, smooth, and greased. Junction-to-Ambient Rasa ALL _ 80 C/W | Typical socket mount. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current Is IRF9540 19 A Modified MOSFET symbol o (Body Diode) IRF9541 ~ ~ - showing the integra! 1RF9542 reverse P-N junction rectifier. imrosaa | | | > 1 A Pulse Source Current Ism IRF9540 -16 A G (Body Diode) @ IRF9S41 a _ IRF9542 inFosas | | ~ | 0 | A $ Diode Forward Voltage @ Vsp IRF9540 _ ace _ _ IRF9541 _- _- -15 v Te = 25C, Is = -19 A, Ves =OV IRF9542 _ _ _ IRF9543 _ - -1.5 Vv Te = 25C, Is = -15 A, Ves = OV Reverse Recovery Time te ALL = 170 = ns T, = 150C, Ie = 19 A, di_/dt = 100 A/us Reverse Recovered Charge Qra ALL _ 0.8 = uC Ty= 150C, I_e = 19 A, die/dt = 100 A/us . intrinsic turn-on time is negligible. Forward Turn-on Time ton ALL Turn-on speed is substantially controlled by Ls + Lo. @ T, = 25C to 150C. @ Pulse Test: Pulse width = 300 ys, Duty Cycle <= 2%. @ Repetitive Rating: Pulse width limited by Max. junction temperature. See Transient @ Voo = 25 V, Starting T, = 25C, L = 4 mHy, Re = 25 Q, Peak i, = 19 A (See Figs. 15 & 16). Thermal Impedance Curve (Fig. 5). 6-377Rugged Power MOSFETs IRF9S40, IRF9541 IRF9542, IRF9543 80 us PULSE Vos. > !o(on} * Rostonimex. -80 a a = = = -60 =< E = z cz 3 3 Zz 40 z << < 5 & 2 2 -20 0 -10 -20 -30 -40 -50 0 2 4 6 8 W000 12-14 Vps. RAIN-TO-SOURCE VOLTAGE (VOLTS) Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. - 100 50 -20 -2 IN THIS AREA IS LIMITED BY Reogion) ip, ORAIN CURRENT (AMPERES) -05F Te = 25C Ty = 180C MAX. ~o2 Pinic * 1:0 KW SINGLE PULSE Ip, ORAIN CURRENT (AMPERES) -O1 -10 -2 - -10 -20 ~S0 -100-200 -500 Vp, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 9 2 4 6 -8 -10 92GS-44201 Vps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum safe operating area. y 2 ow 2 nw L eben fae ty C| 1. DUTY FACTOR, D = z . SINGLE {TRANSIENT THERMAL IMPEDANCE) 2. PER UNIT BASE Rinyc = 1.0 DEG. C/W. 3. Tym - Te * Pom Zac). So o xy Zeacl Rac. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) aor 10-5 2 5 10-4 2 5 10-3 2 5 10-2 2 10-! 2 $ 10 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration. 6-378Rugged Power MOSFETs IRF9540, IRF9541 IRF9542, IRF9543 - 100 90 ys PULSE Vos. > !n(on) * Roston}max. Tys 1 = o Tye Tye 44g. TRANSCONDUCTANCE (SIEMENS) NEGATIVE Ip, REVERSE DRAIN CURRENT (AMPERES) -0.1 -0.4 -06 -0.8 -1.0 -12 -14 -16 -1.8 0 -20 -40 -60 80 -100 NEGATIVE Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Ip. ORAIN CURRENT (AMPERES) 92GS-44167 Fig. 6 - Typical transconductance vs. drain current. Fig. 7 - Typical source-drain diode forward voltage. 1.25 25 1.15 20 > a wn wo mn o Vos = -10V Ip = -108 0.85 a5 BVpgg, DAAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Rpston). DRAIN-TO-SOUACE ON RESISTANCE (NORMALIZED) 0.75 0 -40 9 40 a0 120 160 -40 0 40 380 120 160 Ty, JUNCTION TEMPERATURE (C} T), JUNCTION TEMPERATURE (C) Fig. 8 - Breakdown voltage vs. temperature. Fig. 9 - Normalized on-resistance vs. temperature. 2000 Cise = Cys * Cyg. Cas Css Cog Ip = -24A 1600 Coss = Cys + fps & _ FOR TEST CIRCUIT on ss GF 7 tei 2 SEE FIGURE 18 3 = Cas + Cgg 2 = 4 = 1200 = 8 5 z o < > Ee im 2 2 < 5 S 800 3 e e Vos* < oe 400 8 Vos * - Vps = -80V, 1RF9540,9542 a -10 -20 -30 -40 "30 0 20 40 60 60 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Oy, TOTAL GATE CHARGE (nC) Fig. 10 - Typical capacitance vs. drain-to-source voltage. Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-379Rugged Power MOSFETs IRF9540, IRF9541 IRF9542, IRF9543 _ Veg =-10 6-380 OF 5 us PULSE DURATION. INITIAL Ty = 25C. TING EFFECT OF S ys PULSE IS Roston). ORAIN-TO-SOURCE ON RESISTANCE (OHMS? Q -20 40 -60 -80 -100 Ip. ORAIN CURRENT (AMPERES) Fig. 12 - Typical on-resistance vs. drain current. 150 Ss S w Ss Pp, POWER DISSIPATION (WATTS) 0 50 100 150 Tc, CASE TEMPERATURE (C) Fig. 14 - Power vs. temperature derating curve. Rg _f)ii +t bor? VARY tp TO OBTAIN REQUIRED PEAK i, 9208-43280 Fig. 17 - Switching time test circuit. Ip, ORAIN CURRENT (AMPERES) $0 Tc, CASE TEMPERATURE (C) IRF9540,9541 IRF9542,9543 100 150 Fig. 13 - Maximum drain current vs. case temperature. Lov Veg =-10V VARY ty TO OBTAIN REQUIRED PEAK |), 92CS-43278 Fig. 15 - Unclamped inductive test circuit. 8VYoss 92C$-43279 Fig. 16 - Unclamped inductive waveforms. wv 5 BATTERY 2 T CURRENT -Vos REGULATOR 6 O F oaurl 50 Ka (ISOLATED SUPPLY) SAME TYPE AS DUT O+Vps Ig 'o CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR 92CS-43781 Fig. 18 - Gate charge test circuit.