MBR4035PT-MBR4060PT
MBR4035PT - MBR4060PT, Rev. A
MBR4035PT - MBR4060PT
40 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Symbol Parameter Value Units
IOAverage Rectified Current
.375” lead length @ TA = 125 °C40 A
if(repetitive) Peak Rep etitive Forward Curre n t
(Rated VR , Squa re Wave, 20 KHz) @ TA = 120°C40 A
if(surge) Pe ak Forwa rd Surge Current
8.3 ms single half-sine-wa ve
Superimposed on rated load (JEDEC method) 400 A
PDTotal D evice Dissipation
Derate above 25°C3.0
25 W
mW/°C
RθJL Thermal Resistance, Junction to Lead 1.2 °C/W
Tstg Storage Temperature Range -65 to +175 °C
TJOperating Junction Temperature -65 to +150 °C
Parameter Device Units
4035PT 4045PT 4050PT 4060PT
Peak Repeti tive Reverse Vol tage 35 45 50 60 V
Maximum RMS Voltage 24 31 35 42 V
DC Reverse Voltage (Rated VR)35 45 50 60 V
Voltage Rat e of Change (Rated VR)10,000 V/uS
Maximum Reverse Current
@ rated VRTA = 25°C
TA = 125°C1.0
100 mA
mA
Maximum Forward V ol t age
IF = 20 A, TC = 25°C
IF = 20 A, TC = 125°C
IF = 40 A, TC = 25°C
IF = 40 A, TC = 125°C
0.70
0.60
0.80
0.75
0.72
0.62
-
-
V
V
V
V
Peak Repet i tive Reverse S urge
Current
2.0 us Pulse Width, f = 1.0 KHz
2.0 1.0 A
Features
•Low power loss, high efficiency.
•High surge capacity.
•For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
•Metal silicon junction, majority carrier
conduction.
•High current capacity, low forward
voltage drop.
•Guard ring for over voltage protection.
Dimensions are in: inches (mm)
0.193(4.90)
0.203(5.16)
10° 30°
0.078(1.98)
0. 10 8(2.7)
0.118(3.0)
0. 02 0(0.51)
0. 03 0(0.76)
10°
TYP
BOTH SIDES
123
0.625(15.9)
0.645(16.4)
.17(4.3)
0.076(1.93)
0.086(2.18)
0.044(1.12)
0.048(1.22)
0.205(5.2)
0.225(5.7)
0.225(5.7)
0.245(6.2)
0.114(2.9)
0.134(3.4)
0.313(7.9)
0.323(8.2)
0.117(2.97)
0.127(3.22)
0.14(3.5)
0.16(4.1)
0.775(19.7)
0.795(20.2)
0.82(20.8)
0.84(21.3)
TO-3P/
TO-247AD
+
CASE
PIN 2
PIN 3
PIN 1
MBR4035PT-MBR4060PT
MBR4035PT - MBR4060PT, Rev. A
Schotty Barrier Rectifier
(continued)
Typical Characteristics
Forw a rd Cu rrent Derati ng Curve
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
A M BI ENT TE MP ERATU RE ( C)
FOR WAR D CURRE NT ( A)
SINGLE PHASE
HALF W AVE
60 H Z
RESISTIVE OR
I N DU CT IV E L OAD
.375" ( 9.00mm) LOAD
LENGTHS
º
T ran sient Thermal Impedance
0.01 0.1 1 10 100
0.1
1
10
100
T. PULSE DURA TION (se c.)
TRA NS IEN T THERMAL IMPEDANCE ( C /W )
º
Non -Repetit ive Surge Curre nt
12 51020 50100
100
200
300
400
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT (A)
Typi cal Junction Capacitance
0.1 1 10 100
100
200
500
1000
2000
5000
REVERSE VOLTAGE (V)
JUNCT ION CAPACI TAN C E ( p F)
MBR4035PT-MBR4045PT
MBR4050PT-MBR4060PT
Forward Charact eristic s
0 0.2 0.4 0.6 0.8 1 1.2
0.01
0.1
1
10
50
FORWARD VOLTAGE (V)
FOR WAR D CURRE NT ( A)
Pulse Widt h = 300µS
2% Duty Cycle
T = 2 5 C
º
A
T = 150 C
º
A
MBR4050PT-MBR4 060PT
MBR4035PT-MBR4 045PT
Reverse Charact eri stics
0 20406080100120140
0.001
0.01
0.1
1
10
50
PER CE NT OF RA TED PEA K RE VER SE VO LTAGE (% )
REVE RSE CU RRENT (mA)
T = 2 5 C
º
A
T = 7 5 C
º
A
T = 125 C
º
A
MBR4035PT-MBR4045PT
MBR4050PT-MBR4060PT
MBR4050PT-MBR4060PT
MBR4035PT-MBR4045PT
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
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This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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