ESD9C3.3ST5G SERIES ESD Protection Diode Micro-Packaged Diodes for ESD Protection The ESD9C3.3ST5G Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other portable applications. www.onsemi.com 1 Specification Features: PIN 1. CATHODE 2. ANODE * Low Capacitance 6.2 pF - 13 pF * Low Clamping Voltage * Small Body Outline Dimensions: * * * * * * * * MARKING DIAGRAM 0.039 x 0.024 (1.0 mm x 0.60 mm) Low Body Height: 0.016 (0.40 mm) Max Stand-off Voltage: 3.3 V, 5 V Low Leakage Response Time < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000-4-2 Level 4 ESD Protection AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices XM SOD-923 CASE 514AB X M = Specific Device Code = Date Code ORDERING INFORMATION Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V-0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any Device Package Shipping ESD9CxxST5G SOD-923 (Pb-Free) 8000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements DEVICE MARKING INFORMATION MAXIMUM RATINGS Rating IEC 61000-4-2 (ESD) 2 Symbol Contact Air Total Power Dissipation on FR-5 Board (Note 1) @ TA = 25C Junction and Storage Temperature Range Lead Solder Temperature - Maximum (10 Second Duration) PD Value Unit 8.0 15 kV See specific marking information in the device marking column of the table on page 2 of this data sheet. mW 150 TJ, Tstg -55 to +150 C TL 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR-5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. (c) Semiconductor Components Industries, LLC, 2013 November, 2017 - Rev. 4 1 Publication Order Number: ESD9C3.3S/D ESD9C3.3ST5G SERIES ELECTRICAL CHARACTERISTICS I (TA = 25C unless otherwise noted) IF Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR Working Peak Reverse Voltage Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation V IR VF IT Breakdown Voltage @ IT IT C VC VBR VRWM Maximum Reverse Leakage Current @ VRWM IPP Max. Capacitance @VR = 0 and f = 1 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. Uni-Directional ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA) VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT C (pF) (Note 3) C (pF) (Note 3) VC Max Max Min mA Typ Max Per IEC61000-4-2 (Note 4) Figures 1 and 2 See Below (Note 5) Device Device Marking ESD9C3.3ST5G R 3.3 1.0 5.0 1.0 12.8 13 ESD9C5.0ST5G P 5.0 0.5 11.0 1.0 6.0 6.2 2. 3. 4. 5. VBR is measured with a pulse test current IT at an ambient temperature of 25C. Capacitance at f = 1 MHz, VR = 0 V, TA = 25C. For test procedure see Figures 3 and 4 and Application Note AND8307/D. ESD9C5.0ST5G shown below. Other voltages available upon request. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000-4-2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000-4-2 www.onsemi.com 2 ESD9C3.3ST5G SERIES IEC61000-4-2 Waveform IEC 61000-4-2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000-4-2 Spec Device ESD Gun Under Oscilloscope Test 50 W 50 W Cable Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D - Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000-4-2 waveform. Since the IEC61000-4-2 was written as a pass/fail spec for larger www.onsemi.com 3 ESD9C3.3ST5G SERIES PACKAGE DIMENSIONS SOD-923 CASE 514AB ISSUE C D -X- NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. -Y- E 1 2X b 0.08 X Y 2 TOP VIEW DIM A b c D E HE L L2 A c HE SIDE VIEW MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 SOLDERING FOOTPRINT* 2X L 1.20 2X 2X 0.36 2X INCHES MIN NOM MAX 0.013 0.015 0.016 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.007 REF 0.002 0.004 0.006 L2 PACKAGE OUTLINE BOTTOM VIEW 0.25 DIMENSIONS: MILLIMETERS See Application Note AND8455/D for more mounting details *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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