2SK2824 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment High Speed Switch Applications Analog Switch Applications Unit: mm * High input impedance * 1.5 V gate drive * Low gate threshold voltage: Vth = 0.5~1.0 V * Small package Marking Equivalent Circuit JEDEC Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V DC drain current ID 100 mA Drain power dissipation PD 100 mW Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C JEITA SC-70 TOSHIBA 2-2E1E Weight: 0.006 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. 1 2007-11-01 2SK2824 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 1 A V (BR) DSS ID = 100 A, VGS = 0 20 V IDSS VDS = 20 V, VGS = 0 1 A Vth VDS = 1.5 V, ID = 0.1 mA 0.5 1.0 V Yfs VDS = 1.5 V, ID = 10 mA 35 70 mS Drain-source ON resistance 1 RDS (ON) 1 ID = 1 mA, VGS = 1.2 V 15 50 Drain-source ON resistance 2 RDS (ON) 2 ID = 10 mA, VGS = 1.5 V 10 40 Drain-source ON resistance 3 RDS (ON) 3 ID = 10 mA, VGS = 2.5 V 7 28 Gate threshold voltage Forward transfer admittance Input capacitance Ciss VDS = 1.5 V, VGS = 0, f = 1 MHz 12 pF Reverse transfer capacitance Crss VDS = 1.5 V, VGS = 0, f = 1 MHz 3.4 pF Output capacitance Coss VDS = 1.5 V, VGS = 0, f = 1 MHz 12 pF VDD = 1.5 V, ID = 10 mA, VGS = 0~1.5 V 0.35 0.2 Switching time Turn-on time ton Turn-off time toff s Switching Time Test Circuit (1) Test circuit 2 (2) VIN VGS (3) VOUT VDS 2007-11-01 2SK2824 3 2007-11-01 2SK2824 4 2007-11-01 2SK2824 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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