"GG E SOLID STATE ou pe fse7soan Oons712 [ Optoelectronic Specifications TH l= 85 2 5 MILLIMETERS INCHES Photon Coupled Isolator H11B25 comer] eaeerens THE Iuors Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier A aa geo | 3m | eo The GE Solid State H11B255 consists of a gallium arsenide SEARS c -") aca | - [ 340 | 2 infrared emitting diode coupled with a silicon photo- 4 - A-| A068 | 508 5 | Os darlington amplifier in a dual in-line package. This device is yeh F | tor | 178 | 080 a0 also available in Surface-Mount packaging. TT rr s 228 | 260 om | NO] absolute maximum ratings: (25C) f(t iy Jf me 308) te | . | M = 18 - 15 INFRARED EMITTING DIODES T wry N 38 ons ow} x. Power Dissipation *90 milliwatts 4 ot ch] om | 292 | 903 | otis | Forward Current (Continuous) 60 millliamps [1 -P 8 | R mon NOES: Forward Current (Peak) 3 ampere wet los | i , | 1. INSTALLED POSITION LEAD CENTERS. (Pulse width 1usec. 300 P Ps) * \ <. a 2. OVERALL INSTALLED DIMENSION. _ 4 3. THESE MEASUREMENTS ARE MADE FROM THE Reverse Voltage 3 volts sod D SEATING PLANE. *Derate 1.2mW/C above 25C ambient. 4, FOUR PLACES. TOTAL DEVICE PHOTO-DARLINGTON Storage Temperature -55 to 150C Power Dissipation **210 milliwatts Operating Temperature -55 to 100C Vcro 55 volts Lead Soldering Time (at 260C) 10 seconds. Vcpo 55 volts Surge Isolation Voltage (Input to Output). Vepo 8 volts 3535V ireaxy 2500V ams) Collector Current (Continuous) 100 milliamps Steady-State Isolation Voltage (Input to Output). **Derate 2.8mW/C above 25C ambient. 3180V pea 2250V ams) individual electrical characteristics (25C) INFRARED EMITTING Typ. | MAX. | UNITS PHOTO-DARLINGTON MIN.| TYP. |MAX.| UNITS Forward Voltage 11 1.5 {volts Breakdown VoltageVprjyceo | 55 | - | volts (de = 20mA) (Ic = 100pA, Ip = 0) Breakdown Voltage -Vprjcno | 55] | volts . (Ig = 100HA, Ip = 0) Reverse Current - 10 |microamps Breakdown Voltage -Vpryeso | 8 | Jvolts (Vz = 3V) (Ig = 100A, Ip = 0) Collector Dark Current Icgo | | 100 |nanoamps . (Vcr = 10V, Ip = 0) Capacitance 50 |picofarads Capacitance - 2 | |picofarads (V = O,f = 1 MHz) (Vcr = 10V,f = 1 MHz) coupled electrical characteristics (25C) min, | Typ. | MAX. UNITS DC Current Transfer Ratio (Ip = 10mA, Vcr = 5V) 100 _ _ 1% Saturation Voltage Collector to Emitter (Ip = 50mA, Ie = 50mA) - - 1.0 | volts Isolation Resistance (Input to Output Voltage = 500Vpc) : 100 - | gigaohms Input to Output Capacitance (Input to Output Voltage = O,f = 1 MHz) - - 2 | picofarads Switching Speeds: On-Time (Vex = LOV, Ic = 10mA, Ri = 1002) - 125 | microseconds Off-Time (Vcg = 1OV, Ic = 10mA, Ry = 1002) - 100 | microseconds VDE Approved to 0883/6.80 0110b Certificate # 35025 236 ~ GE SOLID STATE ; . OL DEM 3875081 0019713 7 H11B255 . DPSS ie Spe oO T 4/-8S TYPICAL CHARACTERISTICS . 10) = a 3B ' 3 z 5 OF E 3 u oa Z 0.01 N = a a g = | 9.001 NORMALIZED TO: & NORMALIZED TO! 8 Voge =8V 2 Vee * SV ? Eee rrrat ct Ip =10mA S Te #10 mA econ] | ETT LUC $28' a Ts +25C 2 468 46 2 4684 Ot 1 0 100 le - {NPUT CURRENT mA 55 15 26 65 100 Ty- AMBIENT TEMPERATURE -C 41. OUTPUT CURRENT VS. INPUT CURRENT 2. OUTPUT CURRENT VS. TEMPERATURE NORMALIZED =10V E u S1OmA =25'c : 3 A B a E > 3 8 Qa w = N z a =< 51.0 z 9 & t aw 2 2 001 Ot Vp-VOLTS Vp- FORWARD VOLTAGE - VOLTS 3. INPUT CHARACTERISTICS 4, OUTPUT CHARACTERISTICS RESISTANCE RORMALIZEO Vee* OV Ris l00n NORMALIZED TO: Vee * 1OV Ip #0 Ta = 25C TggqrOUTPUT CURRENT-mA Legg NORMALIZED DARK CURRENT OL Ol 1 100 +25 +45 +65 +65 +100 . NORMALIZED SWITCHING SPEED Ta AMBIENT TEMPERATURE - C = tartar tet ty 6. NORMALIZED DARK CURRENT VS. 6. SWITCHING SPEED VS. OUTPUT CURRENT TEMPERATURE 237 1 Vog- COLLECTOR TO EMITTER VOLTAGE - VOLTS ie