TEXAS INSTR {OPTOF be DEBpase1726 oosn708 1 t 8967726 TEXAS INSTR COPTO) ; : oo 62C 35708 D a ! Looe ae TIC206A, TIC206B, TIC206C, TIC206D, e TIC216E, TIC206M, TIC206S, TIC206N SILICON TRIACS REVISED OCTOBER 1984 @ Sensitive-Gate Triacs T~ 257 A3 @ 100Vto800V . @ 4ARMS - @ Maxiert of 5 mA (Quadrants 1-3} device schematic TO-220AB PACKAGE am AN JAIN TERMINAL 2 : i MAIN TERMINAL 1 MAIN TERMINAL 2 1S IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unfess otherwise noted) TIc206A | Ticz06B | Ticz06c | TIC206D on-state current at (see Note 2) on-state surge current, : on-state surge current gate current, gate power case temperature {pulse duration < 200 gate power case temperature {sea Note 5) TIC Devices case temperature range temperature range mm case NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. This value applies for 50-Hz full sine wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 120 MA/C. 3. This value applies for one 50-Hz full sine wave when the device is operating at {or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz haif sine wave when the device Is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be fost. 5. This value applies for a maximum averaging time of 20 ms. TEXAS wy . 4-19 E INSTRUMENTS POST OFFICE BOX 226012 @ DALLAS, TEXAS 75265TEXAS INSTR f0PTO} 8961726 TEXAS INSTR COPTO) TIC206A, TIC206B, TIC206C, TIC206D, TIC206E, TIC206M, TIC206S, TIC20EN - SILICON TRIACS pe Qf acna72. oo3,709 3 | 620 36709. DCs T-235-13 on-state current at (see Note 2} on-state surge current, on-state surge gate current, gate power at (pulse duration < 200 us) verage power (av), at (see Note 5) . case temperature range temperature range mm case case temperature temperature at the rate of 120 mA/C. 5. This value applies for a maximum averaging time of 20 ms. case temperatura case temperature absolute maximum ratings at 25C case temperature (unless otherwise noted) TIC206E NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full sine wave operation with resistive load. Above 85C derate linearly to 110C case 3. This value applies for one 50-Hz full sine wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half sine wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has retumed to original thermal equilibrium. During the surge, gate control may ha lost. 1 TIC206M | TIC206S to to =i ra oO Uo @ > s. . 0 oO an 128i 4-20 TEXAS INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 : | ety ro are aes == = 0 wgeie sceTEXAS INSTR {OPTO} be peEBadsar7eb ooas7100 Bf fae 8967726 TEXAS INSTR COPTO) 2c 36710 Of an TIC206A, TIC206B, TIC206C, TIC206D, TIC206E, TIC206M, TIC206S, TIC206N . SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted} 2 Ss - / 3 PARAMETER TEST CONDITIONS MIN TYP MAX] UNIT IpDRM Repetitive Peak Vorm = RatedVprm, ig = 9, Te = 110C +1] mA Off-State Current Vsupply = +12V?, RL = 102, twig) = 20us 05 5 | term PeakGate . Vsupply = +127, Ry = 102, twig) 2 20 ps -1.5 -5} 4 Trigger Current Vsupply = 127. RL = 108, twig) # 20 us -2 = -5 Vsupply = 12V4, Ry = 109, twig) = 20 xs 3.6 10 Voupply = +12VT, RL = 108, tw(g) = 20 xs 07. 2 Verm Peak Gate Vsupply = + 12V4, Ay = 108, twig)? 20s ~07 -2] Trigger Voltage Veupply = 12VT, RL = 109, twig)? 20ns- } = -08 ~2 Vsupply = 12V7, RL = 109, twig) # 20 ns 08 2 Vim Peak On-State ITM = 4.2A, Ig = 50mA, See Note 6 13 221 V Voltage wero = In * Holding Current Mating 1M = m mA Veupply = 124. ig = 0, -4 -18 initiating ity = 100mMA = t . IL Latching Current Vsupply = + 12V See Note 7 30} nA Vsupply = 12Vt, See Note 7 -30 dvidt Critical Rate of Rise Vprm = RatedVpam, tg = 9. To = 110C . 50 Vins of Off-State Voltage : dvidt(e} Ctitical Rise of VorM = RatedVpam, ItAM= 4.24, To = 85C 113 2.5| Vips Commutation Voltage T All voltages are with respect to Main Terminal 1. NOTES: 6. These parameters must be measured using pulse techniques, ty 1 ms, duty cycle < 2 %. Voltage-sensing contacts, @o. separate from the current-carrying contacts, are located within 3,2 mm (1/8 inch} from the device body. So 7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: > . Rg = 1009, ty = 20ys, t, <15ns, te<t5ns, f = 1 kHz. . oO | _. Qa ! thermal characteristics QO PARAMETER MIN TYP MAX{ UNIT E Resc 7.8[ CW Raa 62.5 1283 i TEXAS 4-21 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265TEXAS INSTR {OPTO? b2 DEP areiza, ooze71a 1 SODIAe OIL i 8961726 TEXAS INSTR COPTOY - 62C 36711 =D ) TIC206A, TIC206B, TIC206C, TIC206D, T-25-/3 TIC206E, TIC206M, TIC206S, TIC206N SILICON TRIACS - TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT TEMPERATURE ik 400 Vsupply GTM + + l@t Gate Trigger Current mA _ = o S Fs S = -40 -20 0 20 40 60 80 = 100 Tc ~ Case temperature C FIGURE 1 GATE TRIGGER VOLTAGE . vs TEMPERATURE Vsupply |GTm Vaa=212V 4 + + _. Ri =102 - tw(g) = 20 us + atom 0.4 VGT Gate Trigger Voltage V _ = ~40 20 0 20 40 60 80 100 Te Case Temperature C FIGURE 2 4-22 we 1283 TEXAS INSTRUMENTS POST OFFICE @OX 226012 @ DALLAS, TEXAS 75265 . epee: manne re ee eeeTEXAS INSTR LOPTO} b2 DE Ppsde172b ooanzae 3 a de aere tOPTO) 8964726 TEXAS INSTR COPTO) : 62C 36712 D os oO, TIC206A, TIC206B, TIC206C, TIC206D, TIC206E, TIC206M, TIC206S, TIC206N SILICON TRIACS TYPICAL CHARACTERISTICS T-2 Ss - (3 HOLDING CURRENT - TEMPERATURE 100 q E 1 10 2 in Vsupply GTM Fo4 VaA@212V Ig =0 tnitiating IT = 100 mA 0.1 -~40 -20 0 20 40 60 80 100 Te Case Temperature c | FIGURE 3 : GATE FORWARD VOLTAGE rat vs GATE FORWARD CURRENT _ 10 3 2 > 4 > \ a : Q P - 3 04 s 0.1 I 2.0.04 lA= 2 Tc = 26C QUADRANT 1 0.01 4 103 10-2 10-1 100 IGF Gate Forward Current A FIGURE 4 ra &% TEXAS INSTRUMENTS POST OF FICE BOX 225012 @ DALLAS, TEXAS 75265 4-23TEXAS INSTR fOPTO} be DEB ace172, cosas FE 8861726 TEXAS INSTR (OPTOD TIC206A, TIC206B, TIC206C, TIC206D, TIC206E, TIC206M, TIC206S, TIC206N SILICON TRIACS 62C 36713 D T-25713 100 > o _ o tt Latching Current mA > 1 - 40 20 = oO 6 <. 5 ow TYPICAL CHARACTERISTICS Tc Case Temperature C LATCHING CURRENT vs TEMPERATURE Vsupply IGT Vaazti2zv + + - + om 0 20 40 #460 80 100 FIGURE 5 xas WY we INSTRUMENTS 4-24 POST OFFICE BOX 225012 # DALLAS, TEXAS 75265