VS-GT100DA120UF www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A FEATURES * Trench IGBT high speed * Square RBSOA * HEXFRED(R) low Qrr, low switching energy * Positive VCE(on) temperature coefficient * Fully isolated package * Very low internal inductance ( 5 nH typical) * Industry standard outline SOT-227 * UL approved file E78996 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VCES 1200 V IC DC 100 A at 108 C VCE(on) typical at 100 A, 25 C 1.93 V Speed 8 kHz to 30 kHz BENEFITS * Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating * Easy to assemble and parallel * Direct mounting on heatsink Package SOT-227 Circuit configuration Single switch with AP diode * Plug-in compatible with other SOT-227 packages * Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current SYMBOL TEST CONDITIONS VCES IC MAX. UNITS 1200 V TC = 25 C 187 TC = 90 C 123 ICM 240 Clamped inductive load current ILM 250 Gate to emitter voltage VGE 20 Diode continuous forward current Single pulse forward current IF IFSM Power dissipation, IGBT PD Power dissipation, diode PD Isolation voltage VISOL TC = 25 C 97 TC = 90 C 61 10 ms sine or 6 ms rectangular pulse, TJ = 25 C 350 TC = 25 C 890 TC = 90 C 500 TC = 25 C 429 TC = 90 C 194 Any terminal to case, t = 1 min 2500 A V A W V Revision: 10-Sep-2019 Document Number: 96079 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100DA120UF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Forward voltage drop, diode VFM Gate to emitter leakage current IGES MIN. TYP. MAX. VGE = 0 V, IC = 3.8 mA TEST CONDITIONS 1200 - - VGE = 15 V, IC = 100 A - 1.93 2.55 VGE = 15 V, IC = 100 A, TJ = 125 C - 2.26 - VGE = 15 V, IC = 100 A, TJ = 150 C - 2.35 - 4.5 5.8 7.0 - 4.6 - VCE = VGE, IC = 3.8 mA (25 C to 125 C) - -12 - mV/C VGE = 0 V, VCE = 1200 V - 1.0 100 A VGE = 0 V, VCE = 1200 V, TJ = 125 C - 0.9 - VGE = 0 V, VCE = 1200 V, TJ = 150 C - 3.4 - VGE = 0 V, IF = 80 A - 2.8 3.5 VGE = 0 V, IF = 80 A, TJ = 125 C - 3.0 - VGE = 0 V, IF = 80 A, TJ = 150 C - 3.0 - VGE = 20 V - - 220 nA MIN. TYP. MAX. UNITS - 800 - nC VCE = VGE, IC = 3.8 mA VCE = VGE, IC = 3.8 mA, TJ = 125 C UNITS V mA V SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Total gate charge (turn-on) SYMBOL Qg Input capacitance Cies Reverse transfer capacitance Cres TEST CONDITIONS VGE = -15 V, VGE = +15 V VCE = 25 V, VGE = 0 Vf = 1 MHz - 6150 - - 345 - Turn-on switching loss Eon - 2.2 - Turn-off switching loss Eoff - 3.0 - - 5.2 - - 131 - - 55 - - 244 - Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf - 118 - 2.9 - - 5.3 - - 8.2 - - 147 - - 61 - - 358 - tf - 132 - Eon - 3.0 - - 4.0 - - 7.0 - - 134 - - 66 - - 242 - - 108 - Turn-on switching loss Eon Eoff Total switching loss Etot Turn-on delay time td(on) Turn-off delay time Fall time Turn-on switching loss tr td(off) Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time Energy losses include tail and diode recovery Diode used HFA16PB120 - Turn-off switching loss Rise time IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 1.0 L = 500 H, TJ = 25 C tr td(off) tf IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 1.0 L = 500 H, TJ = 125 C IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 1.0 L = 500 H, TJ = 25 C Energy losses include tail and diode recovery Diode used HFA16PB120 pF mJ ns mJ ns mJ ns Revision: 10-Sep-2019 Document Number: 96079 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100DA120UF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Turn-on switching loss Eon - 3.9 - Turn-off switching loss Eoff - 7.1 - - 11.0 - - 154 - - 72 - - 346 - - 120 - Total switching loss Etot Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 1.0 L = 500 H, TJ = 125 C Energy losses include tail and diode recovery Diode used HFA16PB120 tf Reverse bias safe operating area RBSOA TJ = 150 C, IC = 250 A, Rg = 1.0 VGE = 15 V to 0 V, VCC = 800 V, VP = 1200 V, L = 500 H Short circuit safe operating area SCSOA VGE = 15 V, VCC = 800 V, VCE max. = 1200 V, TVJ = 150 C UNITS mJ ns Fullsquare - - 10 s - 183 - ns - 12 - A Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr - 1093 - nC Diode reverse recovery time trr - 278 - ns - 18.2 - A - 2541 - nC Diode peak reverse current Irr Diode recovery charge Qrr IF = 50 A, dIF/dt = 200 A/s, VR = 400 V IF = 50 A, dIF/dt = 200 A/s, VR = 400 V, TJ = 125 C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range Junction to case Case to heatsink IGBT Diode TEST CONDITIONS TJ, TStg RthJC RthCS Flat, greased surface Weight Mounting torque Case style MIN. TYP. MAX. UNITS -40 - - 150 C - 0.14 - - 0.31 - 0.1 - - 30 - C/W g Torque to terminal - - 1.1 (9.7) Nm (lbf. in) Torque to heatsink - - 1.3 (11.5) Nm (lbf. in) SOT-227 Revision: 10-Sep-2019 Document Number: 96079 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100DA120UF www.vishay.com Vishay Semiconductors 200 3.2 VGE = 15V 175 150 A 2.8 150 TJ = 150 C TJ = 25 C VCE (V) IC (A) 125 100 75 50 2.4 100 A 2.0 50 A TJ = 125 C 1.6 25 0 1.2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 60 80 120 140 160 Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature 200 100 180 90 160 80 VCE = 20 V 70 VGE = 18 V VGE = 15 V 60 IC (A) 120 100 80 TJ = 125 C 50 40 VGE = 12 V 60 30 40 20 VGE = 9 V 20 TJ = 25 C 10 0 0 0 1.0 2.0 3.0 4.0 5.0 5 7 9 11 13 VGE (V) VCE (V) Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 C Fig. 5 - Typical IGBT Transfer Characteristics 160 7.0 140 6.5 120 6.0 100 VGEth (V) Allowable Case Temperature (C) 100 TJ (C) 140 IC (A) 40 VCE (V) DC 80 60 5.5 5.0 4.5 40 4.0 20 3.5 0 TJ = 25 C TJ = 125 C 3.0 0 50 100 150 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IC - Continuous Collector Current (A) IC (mA) Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature Fig. 6 - Typical IGBT Gate Threshold Voltage Revision: 10-Sep-2019 Document Number: 96079 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100DA120UF www.vishay.com Vishay Semiconductors 8 10 TJ = 150 C 7 1 6 Eoff 0.1 Energy (mJ) ICES (mA) TJ = 125 C 0.01 5 4 3 2 0.001 Eon 1 TJ = 25 C 0.0001 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 20 30 40 50 VCES (V) 80 90 100 110 Fig. 10 - Typical IGBT Energy Loss vs. IC TJ = 125 C, VCC = 600 V, Rg = 1.0 , VGE = 15 V, L = 500 H 120 1000 100 Switching Time (ns) td(off) 80 IF (A) 70 IC (A) Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current TJ = 25 C 60 TJ = 125 C 40 TJ = 150 C tf td(on) 100 tr 20 0 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 40 60 80 100 VFM (V) IC (A) Fig. 8 - Typical Diode Forward Characteristics Fig. 11 - Typical IGBT Switching Time vs. IC TJ = 125 C, VCC = 600 V, Rg = 1.0 , VGE = 15 V, L = 500 H 180 12 160 11 140 10 Eon 9 120 DC 100 80 60 Energy (mJ) Allowable Case Temperature (C) 60 8 7 5 40 4 20 3 0 Eoff 6 2 0 10 20 30 40 50 60 70 80 90 100 110 0 2 4 6 8 10 12 IF - Continuous Forward Current (A) Rg () Fig. 9 - Maximum Diode Continuous Forward Current vs. Case Temperature Fig. 12 - Typical IGBT Energy Loss vs. Rg TJ = 125 C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 H Revision: 10-Sep-2019 Document Number: 96079 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100DA120UF www.vishay.com Vishay Semiconductors 1000 30 28 26 24 22 20 18 16 14 12 10 8 6 4 td(on) 100 Irr (A) Switching Time (ns) td(off) tf tr 10 0 2 4 6 8 10 12 TJ = 125 C TJ = 25 C 100 200 Fig. 13 - Typical IGBT Switching Time vs. Rg TJ = 125 C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 H 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 350 300 TJ = 125 C Qrr (nC) trr (ns) 250 200 150 TJ = 25 C 50 0 200 500 Fig. 15 - Typical Diode Reverse Recovery Current vs. dIF/dt Vrr = 400 V, IF = 50 A 400 100 400 dIF/dt (A/s) Rg () 100 300 300 400 TJ = 125 C TJ = 25 C 100 500 200 300 400 500 dIF/dt (A/s) Fig. 14 - Typical Diode Reverse Recovery Time vs. dIF/dt Vrr = 400 V, IF = 50 A Fig. 16 - Typical Diode Reverse Recovery Charge vs. dIF/dt Vrr = 400 V, IF = 50 A 1000 tp = 1 m s Lim ited by V tp 0 10 CE (on ) = 100 = tp s 6 s m ICE - Collector-Emitter Current (A) dIF/dt (A/s) 10 1 0.5 TA = 25 C TJ = 150 C VGE = 15 V Single pulse 5 50 500 VCE - Collector-Emitter Voltage (V) Fig. 17 - IGBT Safe Operating Area Revision: 10-Sep-2019 Document Number: 96079 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100DA120UF www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (C/W) 1 0.1 0.01 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT) ZthJC - Thermal Impedance Junction to Case (C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Diode) IC - Collector Curent (A) 300 250 200 150 100 50 0 1 10 100 1000 VCE (V) Fig. 20 - IGBT Reverse Bias SOA VGE = 15 V, TJ = 150C Revision: 10-Sep-2019 Document Number: 96079 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100DA120UF www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max.) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 21 - Clamped Inductive Load Test Circuit Fig. 22 - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 23 - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 s Eoff Eon Ets = (Eon + Eoff) Fig. 24 - Switching Loss Waveforms Test Circuit Revision: 10-Sep-2019 Document Number: 96079 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100DA120UF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 100 D A 120 UF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - Trench IGBT technology 4 - Current rating (100 = 100 A) 5 - Circuit configuration (D = single switch with antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (UF = Trench ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch with AP diode Lead Assignment 4 3 1 2 D 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 10-Sep-2019 Document Number: 96079 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) O 4.10 (0.161) O 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note * Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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