VS-GT100DA120UF
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Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 100 A
FEATURES
• Trench IGBT high speed
• Square RBSOA
•HEXFRED
® low Qrr, low switching energy
•Positive V
CE(on) temperature coefficient
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
PRIMARY CHARACTERISTICS
VCES 1200 V
IC DC 100 A at 108 °C
VCE(on) typical at 100 A, 25 °C 1.93 V
Speed 8 kHz to 30 kHz
Package SOT-227
Circuit configuration Single switch with AP diode
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 1200 V
Continuous collector current IC
TC = 25 °C 187
A
TC = 90 °C 123
Pulsed collector current ICM 240
Clamped inductive load current ILM 250
Gate to emitter voltage VGE ± 20 V
Diode continuous forward current IF
TC = 25 °C 97
ATC = 90 °C 61
Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 350
Power dissipation, IGBT PD
TC = 25 °C 890
W
TC = 90 °C 500
Power dissipation, diode PD
TC = 25 °C 429
TC = 90 °C 194
Isolation voltage VISOL Any terminal to case, t = 1 min 2500 V
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 3.8 mA 1200 - -
V
Collector to emitter voltage VCE(on)
VGE = 15 V, IC = 100 A - 1.93 2.55
VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.26 -
VGE = 15 V, IC = 100 A, TJ = 150 °C - 2.35 -
Gate threshold voltage VGE(th)
VCE = VGE, IC = 3.8 mA 4.5 5.8 7.0
VCE = VGE, IC = 3.8 mA, TJ = 125 °C - 4.6 -
Temperature coefficient of threshold voltage VGE(th)/TJVCE = VGE, IC = 3.8 mA (25 °C to 125 °C) - -12 - mV/°C
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 1200 V - 1.0 100 μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.9 - mA
VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 3.4 -
Forward voltage drop, diode VFM
VGE = 0 V, IF = 80 A - 2.8 3.5
VVGE = 0 V, IF = 80 A, TJ = 125 °C - 3.0 -
VGE = 0 V, IF = 80 A, TJ = 150 °C - 3.0 -
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 220 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) QgVGE = -15 V, VGE = +15 V - 800 - nC
Input capacitance Cies VCE = 25 V, VGE = 0 Vf = 1 MHz - 6150 - pF
Reverse transfer capacitance Cres -345 -
Turn-on switching loss Eon
IC = 75 A,
VCC = 600 V,
VGE = 15 V,
Rg = 1.0 
L = 500 μH,
TJ = 25 °C
Energy losses
include tail and
diode recovery
Diode used
HFA16PB120
-2.2 -
mJTurn-off switching loss Eoff -3.0 -
Total switching loss Etot -5.2 -
Turn-on delay time td(on) -131 -
ns
Rise time tr-55 -
Turn-off delay time td(off) -244 -
Fall time tf-118 -
Turn-on switching loss Eon
IC = 75 A,
VCC = 600 V,
VGE = 15 V,
Rg = 1.0 
L = 500 μH,
TJ = 125 °C
-2.9 -
mJTurn-off switching loss Eoff -5.3 -
Total switching loss Etot -8.2 -
Turn-on delay time td(on) -147 -
ns
Rise time tr-61 -
Turn-off delay time td(off) -358 -
Fall time tf-132 -
Turn-on switching loss Eon
IC = 100 A,
VCC = 600 V,
VGE = 15 V,
Rg = 1.0 
L = 500 μH,
TJ = 25 °C
Energy losses
include tail and
diode recovery
Diode used
HFA16PB120
-3.0 -
mJTurn-off switching loss Eoff -4.0 -
Total switching loss Etot -7.0 -
Turn-on delay time td(on) -134 -
ns
Rise time tr-66 -
Turn-off delay time td(off) -242 -
Fall time tf-108 -
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Turn-on switching loss Eon
IC = 100 A,
VCC = 600 V,
VGE = 15 V,
Rg = 1.0 
L = 500 μH,
TJ = 125 °C
Energy losses
include tail and
diode recovery
Diode used
HFA16PB120
-3.9 -
mJTurn-off switching loss Eoff -7.1 -
Total switching loss Etot - 11.0 -
Turn-on delay time td(on) -154 -
ns
Rise time tr-72 -
Turn-off delay time td(off) -346 -
Fall time tf-120 -
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = 250 A, Rg = 1.0 
VGE = 15 V to 0 V, VCC = 800 V,
VP = 1200 V, L = 500 μH
Fullsquare
Short circuit safe operating area SCSOA VGE = 15 V, VCC = 800 V,
VCE max. = 1200 V, TVJ = 150 °C - - 10 μs
Diode reverse recovery time trr
IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V
-183 - ns
Diode peak reverse current Irr -12 - A
Diode recovery charge Qrr - 1093 - nC
Diode reverse recovery time trr
IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V,
TJ = 125 °C
-278 - ns
Diode peak reverse current Irr - 18.2 - A
Diode recovery charge Qrr - 2541 - nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range TJ, TStg -40 - 150 °C
Junction to case IGBT RthJC
- - 0.14
°C/WDiode - - 0.31
Case to heatsink RthCS Flat, greased surface - 0.1 -
Weight -30 - g
Mounting torque Torque to terminal - - 1.1 (9.7) Nm (lbf. in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf. in)
Case style SOT-227
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
VS-GT100DA120UF
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Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V
Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C
Fig. 3 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Gate Threshold Voltage
0
25
50
75
100
125
150
175
200
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IC(A)
VCE (V)
T
J
= 125 °C
TJ= 25 °C
TJ= 150 °C
0
20
40
60
80
100
120
140
160
180
200
0 1.0 2.0 3.0 4.0 5.0
IC(A)
VCE (V)
VGE= 12 V
VGE= 9 V
VGE= 18 V VGE= 15 V
0
20
40
60
80
100
120
140
160
0 50 100 150 200
Allowable Case Temperature (°C)
IC- Continuous Collector Current (A)
DC
1.2
1.6
2.0
2.4
2.8
3.2
20 40 60 80 100 120 140 160
VCE (V)
TJ(°C)
100 A
150 A
50 A
VGE = 15V
0
10
20
30
40
50
60
70
80
90
100
5 7 9 11 13
I
C
(A)
V
GE
(V)
TJ= 25 °C
VCE = 20 V
TJ= 125 °C
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGEth (V)
IC(mA)
TJ= 25 °C
TJ= 125 °C
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Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 8 - Typical Diode Forward Characteristics
Fig. 9 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Fig. 10 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, VCC = 600 V, Rg = 1.0 , VGE = 15 V, L = 500 μH
Fig. 11 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, VCC = 600 V, Rg = 1.0 , VGE = 15 V, L = 500 μH
Fig. 12 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH
0.0001
0.001
0.01
0.1
1
10
100 200 300 400 500 600 700 800 900 1000 1100 1200
ICES(mA)
VCES(V)
TJ= 25 °C
TJ= 125 °C
TJ= 150 °C
0
20
40
60
80
100
120
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IF(A)
VFM (V)
TJ= 25 °C
TJ= 150 °C
TJ= 125 °C
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100110
Allowable Case Temperature (°C)
IF- Continuous Forward Current (A)
DC
0
1
2
3
4
5
6
7
8
20 30 40 50 60 70 80 90 100 110
Energy (mJ)
IC(A)
Eoff
Eon
10
100
1000
20 40 60 80 100
Switching Time (ns)
IC(A)
tr
td(off)
td(on)
tf
2
3
4
5
6
7
8
9
10
11
12
024681012
Energy (mJ)
Rg(Ω)
Eoff
Eon
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Fig. 13 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH
Fig. 14 - Typical Diode Reverse Recovery Time vs. dIF/dt
Vrr = 400 V, IF = 50 A
Fig. 15 - Typical Diode Reverse Recovery Current vs. dIF/dt
Vrr = 400 V, IF = 50 A
Fig. 16 - Typical Diode Reverse Recovery Charge vs. dIF/dt
Vrr = 400 V, IF = 50 A
Fig. 17 - IGBT Safe Operating Area
10
100
1000
024681012
Switching Time (ns)
Rg(Ω)
td(off)
tf
td(on)
tr
0
50
100
150
200
250
300
350
400
100 200 300 400 500
trr (ns)
dIF/dt (A/μs)
TJ= 25 °C
TJ= 125 °C
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
100 200 300 400 500
Qrr (nC)
dIF/dt (A/μs)
TJ= 25 °C
TJ= 125 °C
V
CE
- Collector-Emitter Voltage (V)
I
CE
- Collector-Emitter Current (A)
1
10
100
1000
0.5 5 50 500
T
A
= 25 °C
T
J
= 150 °C
V
GE
= 15 V
Single pulse
Limited by V
CE(on)
tp = 100 μs
t
p
= 1 ms
tp = 6 ms
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Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT)
Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Diode)
Fig. 20 - IGBT Reverse Bias SOA
VGE = 15 V, TJ = 150°C
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJC - Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJC - Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
0
50
100
150
200
250
300
1 10 100 1000
IC- Collector Curent (A)
VCE (V)
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Fig. 21 - Clamped Inductive Load Test Circuit Fig. 22 - Pulsed Collector Current Test Circuit
Fig. 23 - Switching Loss Test Circuit
Fig. 24 - Switching Loss Waveforms Test Circuit
* Driver same type as D.U.T.; VC = 80 % of Vce(max.)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
50 V
1000 V
D.U.T.
L
VC *
2
1
Rg
VCC
D.U.T.
R = VCC
ICM
+
-
L
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
+
-
Rg
V
CC
+
-
t = 5 µs
td(on)
tf
tr
90 %
td(off)
10 %
90 %
10 %
5 %
VC
IC
Eon Eoff
Ets = (Eon + Eoff)
1
2
3
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ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Single switch with AP
diode D
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
1
- Insulated Gate Bipolar Transistor (IGBT)
- Vishay Semiconductors product
2
- Trench IGBT technology
3
- Current rating (100 = 100 A)
4
- Circuit configuration (D = single switch with antiparallel diode)
5
6
- Voltage rating (120 = 1200 V)
8
7
- Speed/type (UF = Trench ultrafast IGBT)
Device code
51 32 4 6 7 8
GVS- T 100 D A 120 UF
- Package indicator (A = SOT-227)
3 (C)
2 (G)
1, 4 (E)
1
43
2
Lead Assignment
Outline Dimensions
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SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
Note
• Controlling dimension: millimeter
37.80 (1.488)
38.30 (1.508)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256) 24.70 (0.972)
25.70 (1.012)
2.07 (0.081)
2.12 (0.083)
R full
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
4 x
4.10 (0.161)
4.50 (0.177)
M M M
0.25 (0.010) CA B
4 x M4 nuts
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
5.33 (0.210)
5.96 (0.234)
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